Philips Semiconductors Product specification eee ee eee NPN medium power transistors BC635; BC637; BC639 I FEATURES PINNING e High current (max. 1 A) PIN DESCRIPTION * Low voltage (max. 80 V). 1 base 2 collector APPLICATIONS 3 emitter e Driver stages of audio/video amplifiers. DESCRIPTION ' 2 NPN transistor in a TO-92; SOTS54 plastic package. TX 7, PNP complements: BC636, BC638 and BC640. Lo 1 C I 3 MAM259 Fig.1 Simplified outline (TO-92; SOT54) and symbol. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Voso collector-base voltage open emitter BC635 - 45 Vv BC637 ~ 60 Vv BC639 ~ 100 Vv VcEeo collector-emitter voltage open base BC635 - 45 Vv BC637 - 60 Vv BC639 _ BO Vv lom peak collector current - 1.5 A Prot total power dissipation Tamb 25 C - 0.83 WwW Nee DC current gain Io = 150 MA; Voge = 2 V 40 250 fr transition frequency Io = 50 MA: Voce = 5 Vi f = 100 MHz | 100 ~ MHz 1997 Mar 12 285Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT Voso collector-base voltage open emitter BC635 - 45 Vv BC637 - 60 Vv BC639 - 100 Vv Vcro collector-emitter voltage open base BC635 - 45 Vv BC637 - 60 Vv BC639 - 80 v VeBo emitter-base voltage open collector - 5 Vv Io collector current (DC) - 1 A lom peak collector current - 1.5 A lam peak base current - 200 mA Pro; total power dissipation Tamb < 25 C - 0.83 Ww Tstg storage temperature -65 +150 Cc Tj junction temperature = 150 C Tamb operating ambient temperature -65 +150 C THERMAL CHARACTERISTICS SYMBOL PARAMETER CONDITIONS VALUE UNIT Rit j-a thermal resistance from junction to ambient note 1 150 KAW Note 1. Transistor mounted on an FR4 printed-circuit board. 1997 Mar 12 286Philips Semiconductors Product specification NPN medium power transistors BC635; BC637; BC639 CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN. MAX. | UNIT lcBo collector cut-off current le = 0; Vog = 30V - 100 nA le = 0; Veg = 30 V; Tj = 150 C - 10 LA leBo emitter cut-off current Ic = 0; Vep=5V - 100 nA Nee DC current gain Voce = 2 V; see Fig.2 Ic=5mA 40 _ Io = 150 mA 40 250 Io = 500 mA 25 - Nee DC current gain Io = 150 MA; Vc_e = 2 V: see Fig.2 BC635-10; BC637-10; BC639-10 63 160 BC635-16; BC637-16; BC639-16 100 250 VoeEsat collector-emitter saturation voltage | I> = 500 mA; Ip = 50 mA ~ 500 mV Vee base-emitter voltage lo = 500 MA; Voce = 2 V - 1 Vv fr transition frequency Io = 50 MA; Veg = 5 Vi f = 100 MHz 100 - MHz hres DC current gain ratio of the Hol = 150 mA; |Vcel =2V - 1.6 Aces complementary pairs MBH?F29 960 ny yi Soe ppp pp Ty 1 ry L it Yor =2 | here + ; a ; oops ! : ' fete : 120 ! = { | : | ! \ - ! | ! ean , | : : OTN i : _ { opts hb 1 1 It Ju 40 ft a Hp | cn - i | | oO Lot i od 2 3 10-1 1 10 10 Io (mA) 10 Fig.2 DC current gain: typical values. 1997 Mar 12 287