RGT60TS65D Datasheet 650V 30A Field Stop Trench IGBT Outline VCES 650V IC(100C) 30A VCE(sat) (Typ.) 1.65V PD 194W Features TO-247N (1)(2)(3) Inner Circuit 1) Low Collector - Emitter Saturation Voltage (2) 2) Low Switching Loss (1) Gate (2) Collector (3) Emitter *1 3) Short Circuit Withstand Time 5s (1) 4) Built in Very Fast & Soft Recovery FRD *1 Built in FRD (3) (RFN - Series) 5) Pb - free Lead Plating ; RoHS Compliant Packaging Specifications Applications Packaging General Inverter Reel Size (mm) - Tape Width (mm) - UPS Type Power Conditioner Welder Tube Basic Ordering Unit (pcs) 450 Packing code C11 Marking RGT60TS65D Absolute Maximum Ratings (at TC = 25C unless otherwise specified) Parameter Symbol Value Unit Collector - Emitter Voltage VCES 650 V Gate - Emitter Voltage VGES 30 V TC = 25C IC 55 A TC = 100C IC 30 A 90 A Collector Current Pulsed Collector Current Diode Forward Current ICP TC = 25C IF 40 A TC = 100C IF 20 A 90 A Diode Pulsed Forward Current Power Dissipation *1 IFP *1 TC = 25C PD 194 W TC = 100C PD 97 W Tj 40 to +175 C Tstg 55 to +175 C Operating Junction Temperature Storage Temperature *1 Pulse width limited by Tjmax. www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 1/11 2015.10 - Rev.C Data Sheet RGT60TS65D Thermal Resistance Parameter Symbol Values Min. Typ. Max. Unit Thermal Resistance IGBT Junction - Case R(j-c) - - 0.77 C/W Thermal Resistance Diode Junction - Case R(j-c) - - 2.00 C/W IGBT Electrical Characteristics (at Tj = 25C unless otherwise specified) Parameter Collector - Emitter Breakdown Voltage Symbol BVCES Conditions IC = 10A, VGE = 0V Values Unit Min. Typ. Max. 650 - - V Collector Cut - off Current ICES VCE = 650V, VGE = 0V - - 10 A Gate - Emitter Leakage Current IGES VGE = 30V, VCE = 0V - - 200 nA VGE(th) VCE = 5V, IC = 21.0mA 5.0 6.0 7.0 V Tj = 25C - 1.65 2.1 V Tj = 175C - 2.15 - Gate - Emitter Threshold Voltage IC = 30A, VGE = 15V Collector - Emitter Saturation Voltage www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. VCE(sat) 2/11 2015.10 - Rev.C Data Sheet RGT60TS65D IGBT Electrical Characteristics (at Tj = 25C unless otherwise specified) Parameter Symbol Conditions Values Min. Typ. Max. Input Capacitance Cies VCE = 30V - 1730 - Output Capacitance Coes VGE = 0V - 72 - Reverse Transfer Capacitance Cres f = 1MHz - 29 - Total Gate Charge Qg VCE = 300V - 58 - Gate - Emitter Charge Qge IC = 30A - 15 - Gate - Collector Charge Qgc VGE = 15V - 20 - Turn - on Delay Time td(on) IC = 30A, VCC = 400V - 29 - tr VGE = 15V, RG = 10 - 40 - Tj = 25C - 100 - Inductive Load - 60 - td(on) IC = 30A, VCC = 400V - 29 - tr VGE = 15V, RG = 10 - 41 - Tj = 175C - 113 - Inductive Load - 105 - Rise Time Turn - off Delay Time Fall Time Turn - on Delay Time Rise Time Turn - off Delay Time Fall Time td(off) tf td(off) tf Unit pF nC ns ns IC = 90A, VCC = 520V Reverse Bias Safe Operating Area RBSOA VP = 650V, VGE = 15V FULL SQUARE - RG = 50, Tj = 175C VCC 360V Short Circuit Withstand Time tsc VGE = 15V 5 - - s Tj = 25C www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 3/11 2015.10 - Rev.C Data Sheet RGT60TS65D FRD Electrical Characteristics (at Tj = 25C unless otherwise specified) Parameter Symbol Conditions Values Unit Min. Typ. Max. Tj = 25C - 1.35 1.8 Tj = 175C - 1.15 - - 58 - ns - 6.5 - A - 0.21 - C - 236 - ns - 10.7 - A - 1.36 - C IF = 20A Diode Forward Voltage VF Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr Diode Reverse Recovery Time trr Diode Peak Reverse Recovery Current Irr Diode Reverse Recovery Charge Qrr www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. IF = 20A VCC = 400V diF/dt = 200A/s Tj = 25C IF = 20A VCC = 400V diF/dt = 200A/s Tj = 175C 4/11 V 2015.10 - Rev.C Data Sheet RGT60TS65D Electrical Characteristic Curves Fig.1 Power Dissipation vs. Case Temperature Fig.2 Collector Current vs. Case Temperature 70 220 60 180 Collector Current : IC [A] Power Dissipation : PD [W] 200 160 140 120 100 80 60 40 50 40 30 20 Tj175C VGE15V 10 20 0 0 0 25 50 75 100 125 150 0 175 25 50 75 100 125 150 175 Case Temperature : Tc [C] Case Temperature : Tc [C] Fig.3 Forward Bias Safe Operating Area Fig.4 Reverse Bias Safe Operating Area 120 1000 100 100 Collector Current : IC [A] Collector Current : IC [A] 10s 10 100s 1 0.1 80 60 40 20 TC= 25C Single Pulse Tj175C VGE=15V 0 0.01 1 10 100 0 1000 Collector To Emitter Voltage : VCE[V] www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 200 400 600 800 Collector To Emitter Voltage : VCE[V] 5/11 2015.10 - Rev.C Data Sheet RGT60TS65D Electrical Characteristic Curves Fig.5 Typical Output Characteristics Fig.6 Typical Output Characteristics 90 90 Tj= 25C 60 VGE= 20V 75 VGE= 20V VGE= 12V Collector Current : IC [A] Collector Current : IC [A] 75 Tj= 175C VGE= 15V 45 VGE= 10V 30 VGE= 8V 15 VGE= 15V VGE= 12V 60 45 30 VGE= 10V 15 VGE= 8V 0 0 1 2 3 4 0 5 0 Collector To Emitter Voltage : VCE[V] Fig.7 Typical Transfer Characteristics 2 3 4 5 Collector To Emitter Voltage : VCE[V] Fig.8 Typical Collector To Emitter Saturation Voltage vs. Junction Temperature 4 60 Collector To Emitter Saturation Voltage : VCE(sat) [V] VCE= 10V 50 Collector Current : IC [A] 1 40 30 20 Tj= 175C 10 Tj= 25C 0 0 2 4 6 8 10 IC= 60A 3 IC= 30A 2 IC= 15A 1 0 25 12 Gate To Emitter Voltage : VGE [V] www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. VGE= 15V 50 75 100 125 150 175 Junction Temperature : Tj [C] 6/11 2015.10 - Rev.C Data Sheet RGT60TS65D Electrical Characteristic Curves Fig.9 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage Collector To Emitter Saturation Voltage : VCE(sat) [V] Collector To Emitter Saturation Voltage : VCE(sat) [V] 20 Tj= 25C IC= 60A 15 IC= 30A 10 IC= 15A 5 0 5 10 15 Fig.10 Typical Collector To Emitter Saturation Voltage vs. Gate To Emitter Voltage 20 Tj= 175C 15 IC= 60A 10 IC= 30A IC= 15A 5 0 20 5 10 Gate To Emitter Voltage : VGE [V] 15 20 Gate To Emitter Voltage : VGE [V] Fig.12 Typical Switching Time vs. Gate Resistance Fig.11 Typical Switching Time vs. Collector Current 1000 1000 Switching Time [ns] Switching Time [ns] VCC=400V, VGE=15V RG=10, Tj=175C Inductive oad tf td(off) 100 td(on) tf 100 td(off) tr VCC=400V, IC=30A VGE=15V, Tj=175C Inductive oad td(on) tr 10 10 0 10 20 30 40 50 0 60 Collector Current : IC [A] www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 Gate Resistance : RG [] 7/11 2015.10 - Rev.C Data Sheet RGT60TS65D Electrical Characteristic Curves Fig.13 Typical Switching Energy Losses vs. Collector Current Fig.14 Typical Switching Energy Losses vs. Gate Resistance 10 1 Switching Energy Losses [mJ] Switching Energy Losses [mJ] 10 Eoff 0.1 Eon VCC=400V, VGE=15V RG=10, Tj=175C Inductive oad 0.01 Eoff 1 Eon 0.1 VCC=400V, IC=30A VGE=15V, Tj=175C Inductive oad 0.01 0 10 20 30 40 50 60 0 10 Collector Current : IC [A] 30 40 50 Gate Resistance : RG [] Fig.15 Typical Capacitance vs. Collector To Emitter Voltage Fig.16 Typical Gate Charge 15 Cies 1000 Coes 100 Cres 10 f=1MHz VGE=0V Tj=25C 1 0.01 Gate To Emitter Voltage : VGE [V] 10000 Capacitance [pF] 20 10 5 VCC=300V IC=30A Tj=25C 0 0.1 1 10 0 100 Collector To Emitter Voltage : VCE[V] www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 10 20 30 40 50 60 Gate Charge : Qg [nC] 8/11 2015.10 - Rev.C Data Sheet RGT60TS65D Electrical Characteristic Curves Fig.17 Typical Diode Forward Current vs. Forward Voltage Fig.18 Typical Diode Reverse Recovery Time vs. Forward Current 400 Reverse Recovery Time : trr [ns] 90 Forward Current : IF [A] 75 60 45 30 Tj= 175C Tj= 25C 15 VCC=400V diF/dt=200A/s Inductive oad 300 Tj= 175C 200 100 Tj= 25C 0 0 0 0.5 1 1.5 2 2.5 0 3 Forward Voltage : VF[V] 20 30 40 50 Forward Current : IF [A] Fig.19 Typical Diode Reverse Recovery Current vs. Forward Current Fig.20 Typical Diode Reverse Recovery Charge vs. Forward Current 20 2.5 Reverse Recovery Charge : Qrr [C] Reverse Recovery Current : Irr [A] 10 15 Tj= 175C 10 5 VCC=400V diF/dt=200A/s Inductive oad Tj= 25C 0 0 10 20 30 40 2 1.5 Tj= 175C 1 0.5 Tj= 25C 0 50 0 Forward Current : IF [A] www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. VCC=400V diF/dt=200A/s Inductive oad 10 20 30 40 50 Forward Current : IF [A] 9/11 2015.10 - Rev.C Data Sheet RGT60TS65D Electrical Characteristic Curves Fig.21 IGBT Transient Thermal Impedance Transient Thermal Impedance : ZthJC [C/W] 10 D= 0.5 0.2 0.1 1 PDM 0.1 0.02 0.01 t1 Single Pulse t2 Duty=t1/t2 Peak Tj=PDMxZthJCTC 0.05 0.01 0.0001 0.001 0.01 0.1 1 Pulse Width : t1[s] Fig.22 Diode Transient Thermal Impedance 10 Transient Thermal Impedance : ZthJC [C/W] D= 0.5 0.2 0.1 1 0.05 0.01 0.0001 PDM Single Pulse 0.1 0.02 t1 0.01 t2 Duty=t1/t2 Peak Tj=PDMxZthJCTC 0.001 0.01 0.1 1 Pulse Width : t1[s] www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. 10/11 2015.10 - Rev.C Data Sheet RGT60TS65D Inductive Load Switching Circuit and Waveform Gate Drive Time 90% D.U.T. D.U.T. VGE 10% VG 90% Fig.23 Inductive Load Circuit IC 10% td(on) tr ton IF td(off) tf toff trr , Qrr VCE diF/dt VCE(sat) Irr Fig.25 Diode Reverce Recovery Waveform www.rohm.com (c) 2015 ROHM Co., Ltd. All rights reserved. Fig.24 Inductive Load Waveform 11/11 2015.10 - Rev.C Notice Notes 1) The information contained herein is subject to change without notice. 2) Before you use our Products, please contact our sales representative and verify the latest specifications : 3) Although ROHM is continuously working to improve product reliability and quality, semiconductors can break down and malfunction due to various factors. Therefore, in order to prevent personal injury or fire arising from failure, please take safety measures such as complying with the derating characteristics, implementing redundant and fire prevention designs, and utilizing backups and fail-safe procedures. ROHM shall have no responsibility for any damages arising out of the use of our Poducts beyond the rating specified by ROHM. 4) Examples of application circuits, circuit constants and any other information contained herein are provided only to illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. 5) The technical information specified herein is intended only to show the typical functions of and examples of application circuits for the Products. ROHM does not grant you, explicitly or implicitly, any license to use or exercise intellectual property or other rights held by ROHM or any other parties. ROHM shall have no responsibility whatsoever for any dispute arising out of the use of such technical information. 6) The Products specified in this document are not designed to be radiation tolerant. 7) For use of our Products in applications requiring a high degree of reliability (as exemplified below), please contact and consult with a ROHM representative : transportation equipment (i.e. cars, ships, trains), primary communication equipment, traffic lights, fire/crime prevention, safety equipment, medical systems, servers, solar cells, and power transmission systems. 8) Do not use our Products in applications requiring extremely high reliability, such as aerospace equipment, nuclear power control systems, and submarine repeaters. 9) ROHM shall have no responsibility for any damages or injury arising from non-compliance with the recommended usage conditions and specifications contained herein. 10) ROHM has used reasonable care to ensur the accuracy of the information contained in this document. However, ROHM does not warrants that such information is error-free, and ROHM shall have no responsibility for any damages arising from any inaccuracy or misprint of such information. 11) Please use the Products in accordance with any applicable environmental laws and regulations, such as the RoHS Directive. For more details, including RoHS compatibility, please contact a ROHM sales office. ROHM shall have no responsibility for any damages or losses resulting non-compliance with any applicable laws or regulations. 12) When providing our Products and technologies contained in this document to other countries, you must abide by the procedures and provisions stipulated in all applicable export laws and regulations, including without limitation the US Export Administration Regulations and the Foreign Exchange and Foreign Trade Act. 13) This document, in part or in whole, may not be reprinted or reproduced without prior consent of ROHM. 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