2 1 3 4 2 1 Anti-Paralle l APT2x100DQ100J 3 4 2 3 1 4 SO P aralle l APT2x101DQ100J 2 T- 27 "UL Recognized" file # E145592 IS OT OP (R) APT2x101DQ100J 1000V 100A APT2x100DQ100J 1000V 100A DUAL DIE ISOTOP(R) PACKAGE ULTRAFAST SOFT RECOVERY RECTIFIER DIODE PRODUCT APPLICATIONS PRODUCT FEATURES PRODUCT BENEFITS * Anti-Parallel Diode * Ultrafast Recovery Times * Low Losses * Soft Recovery Characteristics * Low Noise Switching * Popular SOT-227 Package * Cooler Operation * Low Forward Voltage * Higher Reliability Systems * Uninterruptible Power Supply (UPS) * High Blocking Voltage * Increased System Power * Induction Heating * Low Leakage Current * High Speed Rectifiers * Avalanche Energy Rated -Switchmode Power Supply -Inverters * Free Wheeling Diode -Motor Controllers -Converters * Snubber Diode Density All Ratings: TC = 25C unless otherwise specified. MAXIMUM RATINGS Symbol VR Characteristic / Test Conditions APT2x101_100DQ100J UNIT 1000 Volts Maximum D.C. Reverse Voltage VRRM Maximum Peak Repetitive Reverse Voltage VRWM Maximum Working Peak Reverse Voltage IF(AV) Maximum Average Forward Current (TC = 64C, Duty Cycle = 0.5) 100 RMS Forward Current (Square wave, 50% duty) 133 IF(RMS) IFSM Non-Repetitive Forward Surge Current (TJ = 45C, 8.3ms) EAVL Avalanche Energy (1A, 40mH) TJ,TSTG Amps 1000 Operating and StorageTemperature Range 20 mJ -55 to 175 C STATIC ELECTRICAL CHARACTERISTICS VF Characteristic / Test Conditions Forward Voltage IRM Maximum Reverse Leakage Current CT Junction Capacitance, VR = 200V MIN TYP MAX IF = 100A 2.1 2.7 IF = 150A 2.34 IF = 100A, TJ = 125C 1.64 Volts VR = 1000V 100 VR = 1000V, TJ = 125C 500 Microsemi Website - http://www.microsemi.com 120 UNIT A pF 053-4231 Rev D 3-2011 Symbol DYNAMIC CHARACTERISTICS Symbol APT2x101_100DQ100J Characteristic Test Conditions trr Reverse Recovery Time trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM trr Qrr IRRM trr Qrr IRRM MIN TYP - 45 - 290 - 685 - 6 - 340 ns - 3645 nC - 18 - 160 ns - 7085 nC - 70 Amps MIN TYP IF = 1A, diF/dt = -100A/s, VR = 30V, TJ = 25C IF = 100A, diF/dt = -200A/s VR = 667V, TC = 25C Maximum Reverse Recovery Current Reverse Recovery Time IF = 100A, diF/dt = -200A/s Reverse Recovery Charge VR = 667V, TC = 125C Maximum Reverse Recovery Current Reverse Recovery Time IF = 100A, diF/dt = -1000A/s Reverse Recovery Charge VR = 667V, TC = 125C Maximum Reverse Recovery Current MAX UNIT ns nC - - Amps Amps THERMAL AND MECHANICAL CHARACTERISTICS Symbol Characteristic / Test Conditions R JC VIsolation WT Torque Junction-to-Case Thermal Resistance RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.) oz 29.2 g 0.9 0.7 0.30 Note: 0.20 P DM Z JC, THERMAL IMPEDANCE (C/W) 0.45 0.5 0.3 0.15 t1 t2 0.10 t Duty Factor D = 1 /t2 Peak T J = P DM x Z JC + T C 0.1 0.05 SINGLE PULSE 0.05 0 10-5 10-4 10-3 10-2 0.1 1 RECTANGULAR PULSE DURATION (seconds) FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION 053-4231 Rev D 3-2011 C/W 1.03 Microsemi reserves the right to change, without notice, the specifications and information contained herein. 0.25 .41 Volts Maximum Mounting Torque 0.35 UNIT 2500 Package Weight 0.40 MAX 10 lb*in 1.1 N*m TYPICAL PERFORMANCE CURVES APT2x101_100DQ100J 400 250 200 TJ = 175C 150 TJ = 125C 100 TJ = 25C 50 trr, REVERSE RECOVERY TIME (ns) IF, FORWARD CURRENT (A) 300 0.5 1.0 1.5 2.0 2.5 3.0 VF, ANODE-TO-CATHODE VOLTAGE (V) Figure 2. Forward Current vs. Forward Voltage Qrr, REVERSE RECOVERY CHARGE (nC) 9000 T = 125C J V = 667V 8000 R 7000 150A 100A 6000 5000 4000 50A 3000 2000 1000 0 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 4. Reverse Recovery Charge vs. Current Rate of Change 50A 200 150 100 80 T = 125C J V = 667V 70 R 60 50 100A 40 50A 30 20 10 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE (A/s) Figure 5. Reverse Recovery Current vs. Current Rate of Change 160 Qrr 1.2 trr 0.8 0.6 IRRM J 120 100 80 60 0.4 Qrr 0.2 Duty cycle = 0.5 T = 175C 140 trr 1.0 150A 0 IF(AV) (A) Kf, DYNAMIC PARAMETERS (Normalized to 1000A/s) 100A 250 0 200 400 600 800 1000 1200 -diF /dt, CURRENT RATE OF CHANGE(A/s) Figure 3. Reverse Recovery Time vs. Current Rate of Change 1.4 0.0 150A 300 0 IRRM, REVERSE RECOVERY CURRENT (A) 0 R 50 TJ = -55C 0 350 T = 125C J V = 667V 40 20 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6. Dynamic Parameters vs. Junction Temperature 0 25 50 75 100 125 150 175 Case Temperature (C) Figure 7. Maximum Average Forward Current vs. CaseTemperature 700 600 500 400 300 200 100 0 1 10 100 200 VR, REVERSE VOLTAGE (V) Figure 8. Junction Capacitance vs. Reverse Voltage 053-4231 Rev D 3-2011 CJ, JUNCTION CAPACITANCE (pF) 800 APT2x101_100DQ100J Vr diF /dt Adjus t +18V APT75GP1200 0V D.U.T. 30H trr/Q rr Wavefor m PEARSON 2878 CURRENT TRANSFORMER Figure 9. Diode Test Circui 1 I F - Forward Conduction Current 2 diF /dt - Rate of Diode Current Change Through Zero Crossing. 3 I RRM - Maximum Reverse Recovery Current 4 e diode trr - Revers e R ecovery Time, measured from zero crossing wher current goes from positive to negative, to the point at which the straight line through I RRM and 0.25 I RRM passes through zero . 5 Q rr - Area Under the Curve Defined by I t 1 4 Zer o . 5 RRM 0.25 I RRM 3 2 and trr. Figure 10, Diode Reverse Recovery Waveform and Definition s SOT-227 (ISOTOP(R)) Package Outline 11.8 (.463) 12.2 (.480) 31.5 (1.240) 31.7 (1.248) 7.8 (.307) 8.2 (.322) r = 4.0 (.157) (2 places) 8.9 (.350) 9.6 (.378) Hex Nut M4 H100 (4 places ) W=4.1 (.161) W=4.3 (.169) H=4.8 (.187) H=4.9 (.193) (4 places) 4.0 (.157) 4.2 (.165) (2 places) 0.75 (.030) 0.85 (.033) 3.3 (.129) 3.6 (.143) 14.9 (.587) 15.1 (.594) 053-4231 Rev D 3-2011 30.1 (1.185) 30.3 (1.193) Anode 2 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) Anti-paralle l P aralle l APT2x100DQ100J APT2x101DQ100J Cathode 1 Cathode 1 Anode 1 Anode 1 Anode 2 38.0 (1.496) 38.2 (1.504) Dimensions in Millimeters and (Inches) Cathode 2 Cathode 2