PRODUCT BENEFITS
• Low Losses
• Low Noise Switching
• Cooler Operation
• Higher Reliability Systems
• Increased System Power
Density
PRODUCT FEATURES
• Ultrafast Recovery Times
• Soft Recovery Characteristics
• Popular SOT-227 Package
• Low Forward Voltage
• High Blocking Voltage
• Low Leakage Current
• Avalanche Energy Rated
PRODUCT APPLICATIONS
• Anti-Parallel Diode
-Switchmode Power Supply
-Inverters
• Free Wheeling Diode
-Motor Controllers
-Converters
• Snubber Diode
• Uninterruptible Power Supply (UPS)
• Induction Heating
• High Speed Rectifi ers
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
APT2x101DQ100J 1000V 100A
APT2x100DQ100J 1000V 100A
053-4231 Rev D 3-2011
Anti-Paralle l P aralle l
2
1
323
414
APT2x100DQ100J APT2x101DQ100J
STATIC ELECTRICAL CHARACTERISTICS
Symbol
VF
IRM
CT
UNIT
Volts
μA
pF
MIN TYP MAX
2.1 2.7
2.34
1.64
100
500
120
Characteristic / Test Conditions
Forward Voltage
Maximum Reverse Leakage Current
Junction Capacitance, VR = 200V
IF = 100A
IF = 150A
IF = 100A, TJ = 125°C
VR = 1000V
VR = 1000V, TJ = 125°C
DUAL DIE ISOTOP® PACKAGE
MAXIMUM RATINGS All Ratings: TC = 25°C unless otherwise specifi ed.
Characteristic / Test Conditions
Maximum D.C. Reverse Voltage
Maximum Peak Repetitive Reverse Voltage
Maximum Working Peak Reverse Voltage
Maximum Average Forward Current (TC = 64°C, Duty Cycle = 0.5)
RMS Forward Current (Square wave, 50% duty)
Non-Repetitive Forward Surge Current (TJ = 45°C, 8.3ms)
Avalanche Energy (1A, 40mH)
Operating and StorageTemperature Range
Symbol
VR
VRRM
VRWM
IF(AV)
IF(RMS)
IFSM
EAVL
TJ,TSTG
UNIT
Volts
Amps
mJ
°C
APT2x101_100DQ100J
1000
100
133
1000
20
-55 to 175
SOT-227
IS OT OP
®
1
23
4
file # E145592
"UL Recognized"
Microsemi Website - http://www.microsemi.com
APT2x101_100DQ100J
DYNAMIC CHARACTERISTICS
053-4231 Rev D 3-2011
THERMAL AND MECHANICAL CHARACTERISTICS
MIN TYP MAX
- 45
- 290
- 685
- 6 -
- 340
- 3645
- 18 -
- 160
- 7085
- 70
UNIT
ns
nC
Amps
ns
nC
Amps
ns
nC
Amps
Characteristic
Reverse Recovery Time
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Maximum Reverse Recovery Current
Symbol
trr
trr
Qrr
IRRM
trr
Qrr
IRRM
trr
Qrr
IRRM
Test Conditions
IF = 100A, diF/dt = -200A/μs
VR = 667V, TC = 25°C
IF = 100A, diF/dt = -200A/μs
VR = 667V, TC = 125°C
IF = 100A, diF/dt = -1000A/μs
VR = 667V, TC = 125°C
IF = 1A, diF/dt = -100A/μs, VR = 30V, TJ = 25°C
Characteristic / Test Conditions
Junction-to-Case Thermal Resistance
RMS Voltage (50-60hHz Sinusoidal Wavefomr Ffrom Terminals to Mounting Base for 1 Min.)
Package Weight
Maximum Mounting Torque
Symbol
RθJC
VIsolation
WT
Torque
MIN TYP MAX
.41
2500
1.03
29.2
10
1.1
UNIT
°C/W
Volts
oz
g
lb•in
N•m
Microsemi reserves the right to change, without notice, the specifi cations and information contained herein.
0
0.05
0.10
0.15
0.20
0.25
0.30
0.35
0.40
0.45
10
-5
10
-4
10
-3
10
-2
0.1 1
ZθJC, THERMAL IMPEDANCE (°C/W)
RECTANGULAR PULSE DURATION (seconds)
FIGURE 1. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs. PULSE DURATION
0.5
SINGLE PULSE
0.1
0.3
0.7
0.9
0.05
Peak T
J
= P
DM
x Z
θJC
+
TC
Duty Factor D =
t1
/
t2
t2
t1
P
DM
Note:
053-4231 Rev D 3-2011
APT2x101_100DQ100JTYPICAL PERFORMANCE CURVES
TJ
= 125°C
VR = 667V
50A
100A
150A
IRRM
Qrr
Qrr
trr
trr
400
350
300
250
200
150
100
50
0
80
70
60
50
40
30
20
10
0
Duty cycle = 0.5
TJ
= 175°C
0 25 50 75 100 125 150 25 50 75 100 125 150 175
1 10 100 200
160
140
120
100
80
60
40
20
0
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
800
700
600
500
400
300
200
100
0
C
J, JUNCTION CAPACITANCE Kf, DYNAMIC PARAMETERS
(pF) (Normalized to 1000A/μs)
I
F(AV) (A)
T
J, JUNCTION TEMPERATURE (°C) Case Temperature (°C)
Figure 6. Dynamic Parameters vs. Junction Temperature Figure 7. Maximum Average Forward Current vs. CaseTemperature
VR, REVERSE VOLTAGE (V)
Figure 8. Junction Capacitance vs. Reverse Voltage
300
250
200
150
100
50
0
9000
8000
7000
6000
5000
4000
3000
2000
1000
0
V
F, ANODE-TO-CATHODE VOLTAGE (V) -diF/dt, CURRENT RATE OF CHANGE(A/μs)
Figure 2. Forward Current vs. Forward Voltage Figure 3. Reverse Recovery Time vs. Current Rate of Change
-diF/dt, CURRENT RATE OF CHANGE (A/μs) -diF/dt, CURRENT RATE OF CHANGE (A/μs)
Figure 4. Reverse Recovery Charge vs. Current Rate of Change Figure 5. Reverse Recovery Current vs. Current Rate of Change
0 0.5 1.0 1.5 2.0 2.5 3.0 0 200 400 600 800 1000 1200
0 200 400 600 800 1000 1200 0 200 400 600 800 1000 1200
Q
rr, REVERSE RECOVERY CHARGE IF, FORWARD CURRENT
(nC) (A)
I
RRM, REVERSE RECOVERY CURRENT trr, REVERSE RECOVERY TIME
(A) (ns)
TJ = 175°C
TJ = -55°C
TJ = 25°C
TJ = 125°C
TJ
= 125°C
VR = 667V
150A
50A
100A
TJ
= 125°C
VR = 667V 150A
100A
50A
APT2x101_100DQ100J
053-4231 Rev D 3-2011
4
3
1
2
5
5
Zer o
1
2
3
4
diF/dt - Rate of Diode Current Change Through Zero Crossing.
IF - Forward Conduction Current
IRRM - Maximum Reverse Recovery Current .
trr - Revers e Recovery Time, measured from zero crossing wher e diode
Qrr - Area Under the Curve Defined by I RRM and trr.
current goes from positive to negative, to the point at which the straight
line through IRRM and 0.25 I RRM passes through zero .
Figure 9. Diode Test Circui t
Figure 10, Diode Reverse Recovery Waveform and Definition s
0.25 I RRM
PEARSON 2878
CURRENT
TRANSFORMER
diF/dt Adjus t
30μH
D.U.T.
+18V
0V
trr/Qrr
Wavefor m
Vr
APT75GP1200
Anode 1
31.5 (1.240)
31.7 (1.248)
Dimensions in Millimeters and (Inches)
7.8 (.307)
8.2 (.322)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
14.9 (.587)
15.1 (.594)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
Hex Nut M4 H100
(4 places )
0.75 (.030)
0.85 (.033)
12.6 (.496)
12.8 (.504)
25.2 (0.992)
25.4 (1.000)
1.95 (.077)
2.14 (.084)
Anode 2
Anti-paralle l P aralle l
Cathode 1
r = 4.0 (.157)
(2 places) 4.0 (.157)
4.2 (.165)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
3.3 (.129)
3.6 (.143)
Cathode 2
Anode 1
Cathode 2 Anode 2
Cathode 1
SOT-227 (ISOTOP®) Package Outline
APT2x100DQ100J APT2x101DQ100J
