SWITCHES - CHIP
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
HMC322
General Description
Features
Functional Diagram
The HMC322 is a broadband non-re ective GaAs
MESFET SP8T switch chip. Covering DC to 10 GHz,
this switch offers high isolation and low insertion
loss and extends the frequency coverage of Hittite’s
SP8T switch product line. This switch also includes
an on board binary decoder circuit which reduces
the required logic control lines to three. The switch
operates using a negative control voltage of 0/-5V,
and requires a  xed bias of -5V. All data is tested with
the chip in a 50 Ohm test  xture connected via 0.025
mm (1 mil) diameter wire bonds of 0.5 mm (20 mils)
length.
Broadband Performance: DC - 10.0 GHz
High Isolation: >38 dB@ 4 GHz
Low Insertion Loss: 2.0 dB@ 4 GHz
Integrated 3:8 TTL Decoder
Small Size: 1.45 x 1.6 x 0.10 mm
Electrical Speci cations, TA = +25° C, With 0/-5V Control, Vee= -5V, 50 Ohm System
Typical Applications
The HMC322 is ideal for:
• Telecom Infrastructure
• Microwave Radio & VSAT
• Military & Space
• Test Instrumentation
Parameter Frequency Min. Typ. Max. Units
Insertion Loss
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8 GHz
DC - 10.0 GHz
1. 9
2.0
2.1
2.2
2.4
2.3
2.4
2.5
2.6
2.8
dB
dB
dB
dB
dB
Isolation (RFC to RF1 - 8)
DC - 2.0 GHz
DC - 4.0 GHz
DC - 6.0 GHz
DC - 8 GHz
DC - 10.0 GHz
40
32
27
20
18
46
38
32
26
24
dB
dB
dB
dB
dB
Return Loss “On State” DC - 10.0 GHz 14 dB
Return Loss “Off State” DC - 10.0 GHz 11 dB
Input Power for 1 dB Compression 0.5 - 10.0 GHz 19 23 dBm
Input Third Order Intercept
(Two-Tone Input Power = +7 dBm Each Tone) 0.5 - 10.0 GHz 34 38 dBm
Switching Characteristics
tRISE, tFALL (10/90% RF)
tON, tOFF (50% CTL to 10/90% RF)
DC - 10.0 GHz 50
150
ns
ns
GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10 GHz
v01.0907
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
SWITCHES - CHIP
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Input Third Order Intercept Point
Return Loss
0.1 and 1 dB Input Compression Point
Insertion Loss vs. Temperature Isolation Between RFC and Output Ports
-5
-4
-3
-2
-1
0
012345678910
+25 C
+85 C
-55 C
INSERTION LOSS (dB)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
012345678910
RF1
RF2
RF3
RF4
RF5
RF6
RF7
RF8
ISOLATION (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
012345678910
RFC
RF1-8 ON
RF1-8 OFF
RETURN LOSS (dB)
FREQUENCY (GHz)
25
30
35
40
45
50
12345678910
+25 C
+85 C
-55 C
THIRD ORDER INTERCEPT (dBm)
FREQUENCY (GHz)
18
20
22
24
26
28
12345678910
1.0 Compression Point
0.1dB Compression Point
COMPRESSION POINT (dBm)
FREQUENCY (GHz)
-70
-60
-50
-40
-30
-20
-10
0
012345678910
ISOLATION (dB)
FREQUENCY (GHz)
Isolation Between Output Ports
HMC322
v01.0907 GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
SWITCHES - CHIP
4
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Truth Table
Bias Voltage & Current
Control Voltages
Control Input Signal Path State
ABC RFCOM to:
High High High RF1
Low High High RF2
High Low High RF3
Low Low High RF4
High High Low RF5
Low High Low RF6
High Low Low RF7
Low Low Low RF8
Vee Range = -5 Vdc ± 10%
Vee
(Vdc)
Iee (Typ.)
(mA)
Iee (Max.)
(mA)
-5.0 5.0 9.0
State Bias Condition
Low -3V to 0 Vdc @ 25 uA Typical
High -5 to -4.2 Vdc @ 5 uA Typical
Absolute Maximum Ratings
Bias Voltage Range (Vee) -7 Vdc
Control Voltage Range
(A, B, & C) Vee -0.5V to +1 Vdc
Storage Temperature -65 to +150 °C
Operating Temperature -40 to +85 °C
RF Input Power, 0.5 - 10 GHz +26 dBm
ELECTROSTATIC SENSITIVE DEVICE
OBSERVE HANDLING PRECAUTIONS
HMC322
v01.0907 GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
SWITCHES - CHIP
4
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Outline Drawing
NOTES:
1. DIMENSIONS IN INCHES [MILLIMETERS].
2. DIE THICKNESS IS 0.004”.
3. TYPICAL BOND PAD IS 0.004” SQUARE.
4. TYPICAL BOND PAD SPACING IS 0.006” CENTER TO CENTER.
5. BOND PAD METALLIZATION: GOLD.
6. BACKSIDE METALLIZATION: GOLD.
7. BACKSIDE METAL IS GROUND.
8. NO CONNECTION REQUIRED FOR UNLABELED GROUND BOND PADS.
Die Packaging Information [1]
Standard Alternate
WP-3 (Waffle Pack) [2]
[1] Refer to the “Packaging Information” section for die
packaging dimensions.
[2] For alternate packaging information contact Hittite
Microwave Corporation.
HMC322
v01.0907 GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
SWITCHES - CHIP
4
4 - 18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Pad Number Function Description Interface Schematic
1 - 7,
12 - 14
RF1, RFC,
RF8 - RF2
These pads are DC coupled and matched to 50 Ohms. Block-
ing capacitors are required if RF line potential is not equal to
0V.
8 A See truth table and control voltage table.
9 B See truth table and control voltage table.
10 C See truth table and control voltage table.
11 Vee Supply Voltage = -5Vdc ± 10%
Die Bottom GND Die bottom must be connected to RF / DC ground.
TTL Interface Circuit (Required for Each Control Input A, B and C)
Note:
Control inputs A, B, and C can be driven directly with TTL
logic with -5 Volts applied to the HCT logic gates Vee pin
and to the Vee pad of the RF Switch.
Pad Descriptions
HMC322
v01.0907 GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
SWITCHES - CHIP
4
4 - 19
For price, delivery, and to place orders, please contact Hittite Microwave Corporation:
20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373
Order On-line at www.hittite.com
Assembly Diagram
Handling Precautions
Follow these precautions to avoid permanent damage.
Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag
for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment.
Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems.
Static Sensitivity: Follow ESD precautions to protect against ESD strikes.
Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize
inductive pick-up.
General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the
chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or  ngers.
Mounting
The chip is back-metallized and can be die mounted with electrically conductive epoxy. The mounting surface should be clean
and  at.
Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy  llet is observed around the
perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule.
Wire Bonding
Ball or wedge bond with 0.025mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of
150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum
level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or
substrate. All bonds should be as short as possible <0.31mm (12 mils).
HMC322
v01.0907 GaAs MMIC SP8T NON-REFLECTIVE
SWITCH, DC - 10 GHz
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D