1C3D06060G Rev. G, 01-2016
C3D06060G
Silicon Carbide Schottky Diode
Z-Rec® Rectifier
Features
• 600-VoltSchottkyRectier
• ZeroReverseRecoveryCurrent
• ZeroForwardRecoveryVoltage
• High-FrequencyOperation
• Temperature-IndependentSwitchingBehavior
• ExtremelyFastSwitching
• PositiveTemperatureCoefcientonVF
Benets
• ReplaceBipolarwithUnipolarRectiers
• EssentiallyNoSwitchingLosses
• HigherEfciency
• ReductionofHeatSinkRequirements
• ParallelDevicesWithoutThermalRunaway
Applications
• SwitchModePowerSupplies(SMPS)
• BoostdiodesinPFCorDC/DCstages
• FreeWheelingDiodesinInverterstages
• AC/DCconverters

Package
TO-263-2 
Maximum Ratings (TC=25˚Cunlessotherwisespecied)
Symbol Parameter Value Unit Test Conditions Note
VRRM RepetitivePeakReverseVoltage 600 V
VRSM SurgePeakReverseVoltage 600 V
VDC DCBlockingVoltage 600 V Fig. 3
IFContinuousForwardCurrent
19
9
6
A
TC=25˚C
TC=135˚C
TC=154˚C
IFRM RepetitivePeakForwardSurgeCurrent 30
20 ATC=25˚C,tP=10ms,HalfSineWave
TC=110˚C,tP=10ms,HalfSineWave
IFSM Non-RepetitivePeakForwardSurgeCurrent 63
49 ATC=25˚C,tp=10ms,HalfSineWave
TC=110˚C,tp=10ms,HalfSineWave Fig.8
IFSM Non-RepetitivePeakForwardSurgeCurrent 540
460 ATC=25˚C,tP=10µs,Pulse
TC=110˚C,tP=10µs,Pulse Fig.8
Ptot PowerDissipation 91
39 WTC=25˚C
TC=110˚C
TJ,Tstg OperatingJunctionandStorageTemperature -55to
+175 ˚C
PIN1
PIN2 CASE
Part Number Package Marking
C3D06060G TO-263-2 C3D06060
VRRM = 600 V
IF (TC=135˚C) = 9.5 A
Qc = 16 nC
2C3D06060G Rev. G, 01-2016
Electrical Characteristics
Symbol Parameter Typ. Max. Unit Test Conditions Note
VFForwardVoltage 1.5
2.0
1.7
2.4 VIF=6ATJ=25°C
IF=6ATJ=175°C Fig.1
IRReverseCurrent 6.5
13
33
132 μA VR=600VTJ=25°C
VR=600VTJ=175°C Fig.2
QCTotalCapacitiveCharge 15 nC
VR=400V,IF=6A
di/dt=500A/μs
TJ=25°C
Fig.5
C TotalCapacitance
295
28.5
25.5
pF
VR=0V,TJ=25°C,f=1MHz
VR=200V,TJ=25˚C,f=1MHz
VR=400V,TJ=25˚C,f=1MHz
Fig.6
ECCapacitanceStoredEnergy 2.3 μJ VR=400V Fig.7
Note:Thisisamajoritycarrierdiode,sothereisnoreverserecoverycharge.
Thermal Characteristics
Symbol Parameter Typ. Unit
RθJC ThermalResistancefromJunctiontoCase 1.65 °C/W
Typical Performance
8
12
16
20
Reverse Leakage Current, I
RR (mA)
T
J
= 175 °C
T
J
= 125 °C
T
J
= 75 °C
T
= 25
°
C
0
4
0 100 200 300 400 500 600 700 800 900 1000
Reverse Leakage Current, I
Reverse Voltage, VR(V)
T
J
= -55 °C
T
J
= 25
°
C
Figure1.ForwardCharacteristics Figure2.ReverseCharacteristics
6
8
10
12
14
Foward Current, I
F
(A)
TJ= -55 °C
TJ= 25 °C
TJ= 75 °C
TJ= 175 °C
TJ= 125 °C
0
2
4
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Foward Current, I
Foward Voltage, V
F
(V)
IF (A)
VF (V) VR (V)
IR (mA)
3C3D06060G Rev. G, 01-2016
Figure3.CurrentDerating Figure4.PowerDerating
40
50
60
70
80
90
100
0
10
20
30
25 50 75 100 125 150 175
Figure5.TotalCapacitanceChargevs.ReverseVoltage Figure6.Capacitancevs.ReverseVoltage
Typical Performance
10
15
20
25
Capacitive Charge, Q
C
(nC)
Conditions:
TJ= 25 °C
0
5
0 100 200 300 400 500 600 700
Capacitive Charge, Q
Reverse Voltage, V
R
(V)
150
200
250
300
350
Capacitance (pF)
Conditions:
T
J
= 25 °C
F
test
= 1 MHz
V
test
= 25 mV
0
50
100
0 1 10 100 1000
Capacitance (pF)
Reverse Voltage, V
R
(V)
IF(peak) (A)
TC ˚C TC ˚C
PTot (W)
C (pF)
VR (V)
QC (nC)
VR (V)
4C3D06060G Rev. G, 01-2016
2
3
4
5
6
Capacitance Stored Energy, E
C
(µ
µ
µ
µJ)
0
1
2
0 100 200 300 400 500 600 700
Capacitance Stored Energy, E
Reverse Voltage, V
R
(V)
Typical Performance
100
1,000
I
FSM
(A)
T
J_initial
= 25 °C
T
J_initial
= 110 °C
10
10E-6 100E-6 1E-3 10E-3
Time, tp(s)
Figure7.CapacitanceStoredEnergy Figure8.Non-repetitivepeakforwardsurgecurrent
versuspulseduration(sinusoidalwaveform)
tp (s)
IFSM (A)
VR (V)
EC(mJ)
Figure9.TransientThermalImpedance
100E-3
1
0.5
0.3
0.1
0.05
0.02
0.01
SinglePulse
1E-3
10E-3
1E-6 10E-6 100E-6 1E-3 10E-3 100E-3 1
0.01
Thermal Resistance (˚C/W)
T (Sec)
5C3D06060G Rev. G, 01-2016
Part Number Package Marking
C3D06060G TO-263-2 C3D06060
 TO-263-2
Note: Recommended soldering proles can be found in the applications note here:
http://www.wolfspeed.com/power_app_notes/soldering
10.668
15.990
2.540
1.540
8.890
3.556
Tjb May 2015
MX+DI
Recommended Solder Pad Layout
POS Inches Millimeters
Min Max Min Max
A 0.17 0.18 4.32 4.57
A1 - 0.01 - 0.25
b 0.028 0.037 0.71 0.94
b2 0.045 0.055 1.15 1.4
c 0.014 0.025 0.356 0.635
c2 0.048 0.055 1.22 1.4
D 0.35 0.37 8.89 9.4
D1 0.255 0.324 6.48 8.23
E 0.395 0.405 10.04 10.28
E1 0.31 0.318 7.88 8.08
e 0.1 BSC. 2.54 BSC.
L 0.58 0.62 14.73 15.75
L1 0.09 0.11 2.29 2.79
L2 0.045 0.055 1.15 1.39
L3 0.05 0.07 1.27 1.77
q0° 8° 0° 8°
Package Dimensions
Package TO-263-2
PIN 1
PIN 2
CASE
Note: Tab “M” may not be present
M
66 C3D06060G Rev. G, 01-2016
Copyright © 2016 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power
• RoHSCompliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the thresh-
old limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC
(RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Wolfspeed representative
or from the Product Ecology section of our website at http://www.wolfspeed.com/Power/Tools-and-Support/Product-Ecology.
• REAChCompliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA)
has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree represen-
tative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is
also available upon request.
• This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body
nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited
toequipmentusedintheoperationofnuclearfacilities,life-supportmachines,cardiacdebrillatorsorsimilaremergencymedical
equipment,aircraftnavigationorcommunicationorcontrolsystems,orairtrafccontrolsystems.
Notes
• Cree SiC Schottky diode portfolio: http://www.wolfspeed.com/diodes
• Schottky diode Spice models: http://www.wolfspeed.com/Power/Tools-and-Support/DIODE-model-request2
• SiC MOSFET and diode reference designs: http://go.pardot.com/l/101562/2015-07-31/349i
RelatedLinks
Diode Model
VT
RT
Diode Model CSD04060
Vf T = VT + If*RT
VT= 0.965 + (Tj * -1.3*10-3)
RT= 0.096 + (Tj * 1.06*10-3)
Note: Tj = Diode Junction Temperature In Degrees Celsius,
valid from 25°C to 175°C
VfT=VT+If*RT
VT=0.96+(TJ*-1.1*10-3)
RT=0.07+(TJ*7.4*10-4)