Reflexlichtschranke im SMT-Gehause Reflective Interrupter in SMT Package SFH 9202 Wesentliche Merkmale * Optimaler Arbeitsabstand 1 mm bis 5 mm * IR-GaAs-Lumineszenzdiode: Sender * Si-NPN-Fototransistor: Empfanger * Tageslichtsperrfilter * Kollektor-Emitter-Strom typ. 0.2 mA * Geringe Sattigungsspannung * Sender und Empfanger galvanisch getrennt Features * Optimal operating distance 1 mm to 5 mm * IR-GaAs-infrared emitter * Silicon NPN phototransistor detector * Daylight filter against undesired light effects * Collector-emitter current typ. 0.2 mA * Low saturation voltage * Emitter and detector electrically isolated Anwendungen Applications * * * * * * * * Positionsmelder Endabschalter Drehzahluberwachung Bewegungssensor Typ Type Position reporting End position switch Speed monitoring Motion transmitter ICE IF = 10 mA, VCE = 5 V, d = 1 mm Bestellnummer Ordering Code mA SFH 9202 Q62702-P5039 0.063 ... 0.32 SFH 9202-2/3 Q62702-P5009 0.063 ... 0.2 SFH 9202-3/4 Q62702-P5010 0.10 ... 0.32 2000-01-01 1 OPTO SEMICONDUCTORS SFH 9202 Grenzwerte Maximum Ratings Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Sperrspannung Reverse voltage VR 5 V Vorwartsgleichstrom Forward current IF 50 mA Verlustleistung Power dissipation Ptot 80 mW Dauer-Kollektor-Emitter-Sperrspannung Continuous collector-emitter voltage VCE 16 V Kollektor-Emitter-Sperrspannung, (t 1 min) Collector-emitter voltage, (t 1 min) VCE 30 Emitter-Kollektor-Sperrspannung Emitter-collector voltage VEC 7 Kollektorstrom Collector current IC 10 mA Verlustleistung Total power dissipation Ptot 100 mW Lagertemperatur Storage temperature range Tstg - 40 ... + 85 C Umgebungstemperatur Ambient temperature range TA - 40 ... + 85 Elektrostatische Entladung Electrostatic discharge ESD 2 Umweltbedingungen / Environment conditions 3 K3 acc. to EN 60721-3-3 (IEC 721-3-3) Sender (GaAs-Diode) Emitter (GaAs diode) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) Reflexlichtschranke Light Reflection Switch 2000-01-01 2 KV OPTO SEMICONDUCTORS SFH 9202 Kennwerte (TA = 25 C) Characteristics Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Durchlaspannung Forward voltage IF = 50 mA VF 1.25 ( 1.65) V Sperrstrom Reverse current VR = 5 V IR 0.01 ( 1) A Kapazitat Capacitance VR = 0 V, f = 1 MHz CO 25 pF Warmewiderstand1) Thermal resistance1) RthJA 400 K/W Kapazitat Capacitance VCE = 5 V, f = 1 MHz CCE 5 pF Kollektor-Emitter-Reststrom Collector-emitter leakage current VCE = 20 V ICEO 1 ( 50) nA Fotostrom (Fremdlichtempfindlichkeit) Photocurrent (outside light density) VCE = 5 V, Ev = 1000 Lx IP 1 mA Warmewiderstand1) Thermal resistance1) RthJA 400 K/W Sender (GaAs-Diode) Emitter (GaAs diode) Empfanger (Si-Fototransistor) Detector (silicon phototransistor) 2000-01-01 3 OPTO SEMICONDUCTORS SFH 9202 Kennwerte (TA = 25 C) Characteristics (cont'd) Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Kollektor-Emitterstrom Collector-emitter current Kodak neutral white test card, 90% Reflexion IF = 10 mA; VCE = 5 V; d = 1 mm ICE min. ICE typ. 63 200 A A Kollektor-Emitter-Sattigungsspannung Collector-emitter saturation voltage Kodak neutral white test card, 90% Reflexion IF = 10 mA; d = 1 mm; IC = 20 A VCE sat 0.15 ( 0.6) V Reflexlichtschranke Light Reflection Switch 1) Montage auf PC-Board mit > 5 mm2 Padgroe 1) Mounting on pcb with > 5 mm2 pad size d Reflector with 90% reflexion (Kodak neutral white test card) OHM02257 2000-01-01 4 OPTO SEMICONDUCTORS SFH 9202 Schaltzeiten (TA = 25 C, VCC = 5 V, IC = 100 A1), RL = 1 k) Switching Times F RL C VCC Output OHM02258 Bezeichnung Parameter Symbol Symbol Wert Value Einheit Unit Einschaltzeit Turn-on time tein ton 40 s Anstiegzeit Rise time tr 30 s Ausschaltzeit Turn-off time taus toff 45 s Abfallzeit Fall time tf 40 s 1) IC eingestellt uber den Durchlastrom der Sendediode, den Reflexionsgrad und den Abstand des Reflektors vom Bauteil (d) 1) IC as a function of the forward current of the emitting diode, the degree of reflection and the distance between reflector and component (d) 2000-01-01 5 OPTO SEMICONDUCTORS SFH 9202 Collector Current C I I Cmax C -------------= f (d ) Permissible Power Dissipation for Diode and Transistor Ptot = f (TA ) OHO02255 100 C max % OHO02260 160 Ptot Switching Characteristics t = f (RL) TA = 25 C, IF = 10 mA OHO01367 10 3 Total power dissipation t mW s t on t off 80 120 Detector 60 Emitter 80 10 2 40 40 20 Kodak neutral white test card Mirror 0 0 0 1 2 3 4 mm 5 d Max. Permissible Forward Current I F = f ( TA ) F mA 40 60 80 C 100 10 1 0 10 k RL 10 1 TA OHO00496 20 C CE 100 20 Transistor Capacitance (typ.) CCE = f (VCE), TA = 25 C, f = 1 MHz OHO02259 120 0 pF 10 2 Collector Current IC = f (IF), spacing d to reflector = 1 mm, 90% reflection OHO01324 300 C A 15 80 200 60 10 40 100 VCE = 5 V 5 20 0 0 20 40 60 80 C 100 0 -2 10 10 -1 10 0 TA Forward Voltage (typ.) of the Diode VF = f (T) OHO02256 1.30 VF V 10 1 V 10 2 V CE Relative Spectral Emission of Emitter (GaAs) Irel = f () and Detector (Si) Srel = f () OHO00786 100 rel S rel % 0 0 4 8 12 16 mA 20 F Output Characteristics (typ.) IC = f (VCE), spacing to reflector: d = 1 mm, 90% reflection, TA = 25 C OHO01326 0.6 F = 25 mA C mA 0.5 1.25 80 F = 20 mA F = 20 mA 10 mA 1.20 0.4 60 5 mA F = 15 mA 0.3 1.15 Detector F = 10 mA 40 0.2 1.10 20 1.05 Emitter 1 -40 -20 2000-01-01 0 20 40 60 C T 100 0 700 F = 5 mA 0.1 800 900 1000 nm 1100 6 0 0.1 10 0 10 1 V VCE OPTO SEMICONDUCTORS SFH 9202 1 2 3 4.2 3.8 2.1 1.7 6.2 5.8 3.4 3.0 0...0.1 0.15 0.13 Mazeichnung Package Outlines 0.5 0.3 6 5 4 1.27 spacing GEO06840 Type 1 2 3 4 5 6 SFH 9202 Anode - Emitter Collector - Cathode Mae in mm, wenn nicht anders angegeben / Dimensions in mm, unless otherwise specified. 2000-01-01 7 OPTO SEMICONDUCTORS SFH 9202 Lothinweise Soldering Conditions Bauform Type SFH 9202 Drypack Level acc. to IPS-stand. 020 Tauch-, Schwalllotung Dip, Wave Soldering Reflowlotung Reflow Soldering Peak Temp. Max. Time in Peak Temp. Max. Time (solderbath) peak zone (package in Peak temp.) Zone 4 n. a. 245 C - 10 sec. Kolbenlotung Iron Soldering (Iron temp.) n.a. Bitte Verarbeitungshinweise fur SMT-Bauelemente beachten! Please observe the handling guidelines for SMT devices! 2000-01-01 8 OPTO SEMICONDUCTORS