A D V A N C E D S E M I C O N D U C T O R, I N C. REV. C
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 1/1
Specifications are subject to change without notice.
CHARACTERISTICS TC = 25 °C
SYMBOL NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS
BVCBO IC = 100 mA 100 V
BVCEO IC = 200 mA 50 V
BVEBO IE = 10 mA 4.0 V
ICEO VCE = 30 V 5 mA
ICES VCE = 50 V 10 mA
hFE VCE = 10 V IC = 5.0 A 10 ---
Cob VCB = 50 V f = 1.0 MHz 350 450 pF
GP
ηC VCE = 50 V ICQ =250 mA POUT = 250 W(CW) 12
65 dB
%
IMD
ηC VCE = 50 V ICQ =250 mA POUT = 250 W(PEP) -33
45 -30 dB
%
NPN SILICON RF POWER TRANSISTOR
MRF448
DESCRIPTION:
The MRF448 is Designed for
High Linearity Class AB HF Power Amplifier
Applications up to 30 MHz.
FEATURES:
• PG = 14 dB Typical at 220 W/30 MHz
• IMD3 = -32 dBc Typ. at 220 W(PEP)
• Omnigold™ Metalization System
MAXIMUM RATINGS
IC 16 A
VCBO 100 V
VCEO 50 V
VEBO 4.0 V
PDISS 290 W @ TC = 25 °C
TJ -65 °C to +200 °C
TSTG -65 °C to +150 °C
θJC 0.6 °C/W
PACKAGE STYLE .500 4L FLG
ORDER CODE: ASI10866
MINIMUM
inches / mm
.220 / 5.59
.720 / 18 .2 8
.125 / 3.1 8
.245 / 6.22
.970 / 24.64
B
C
D
E
F
G
A
MAXIMUM
.255 / 6.48
.980 / 24.89
.7.30 / 18.54
inches / mm
.230 / 5.84
H.003 / 0.08 .007 / 0.18
DIM
K
L
I
J
.090 / 2.29
.150 / 3.81
.980 / 24 .8 9
.110 / 2.79
.175 / 4.4 5
1.050 / 26.67
H
IK
J
.112x45°
FULL R
C
E
B
G
D F
AL
Ø.125 NOM.
.125 / 3.1 8
.495 / 12.57 .505 / 12.83
.280 / 7.11
E
E C
B
