AP4302BP-E1 - BCD Semiconductor

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

1

Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

General Description

The AP4302 is a monolithic IC specifically designed

to regulate the output current and voltage levels of

switchin g battery char gers and power suppl ies.

The device contains quad Op Amps and a 2.5V exter-

nally adjusted voltage reference in a 16-pin package.

The four Op Amps feature accurate voltage and current

control. Combining a stable voltage reference w ith the

four Op Amps makes AP4302 ideal for use in multi-

function charger, power supply voltage monitor, signal

processing and control system.

The IC offers the power converter designer a control

solution that features increased precision with a corre-

sponding reduction in system comp lexity and cost.

The AP4302 is available in standard packages of DIP-

16 and SOIC-16.

Features

Op Amp

·Input Offset Voltage: 0.5mV

·Supply Current: 250µA per Op Amp at 5.0V Sup-

ply Voltage

·Unity Gain Bandwidth: 1MHz

·Output Voltage Swing: 0 to (VCC - 1.5)V

·Power Supply Range: 3 to 1 8V

Voltage Reference

·Reference Voltage Tolerance: 0.5%, 1%

·Sink Current Capability from 0.1 to 80m A

·Output Dynamic Impedance: 0.2Ω

·Externally Adjusted Voltage Reference: 2.5V

Applications

·Battery Charger

·Switching Power Supply

Figure 1. Package Types of AP4302

SOIC-16 DIP-16

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Functional Block Diagram

Pin Configuration

Figure 2. Pin configuration of AP4302

INPUT 1-

INPUT 1+

VCC

OUTPUT 4

INPUT 4-

INPUT 4+

GND

Top View

OUTPUT 1

INPUT 2+

INPUT 2-

OUTPUT 2

VREF

INPUT 3+

INPUT 3-

OUTPUT 3

CATHODE

1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

Figure 3. Functional Block Diagram of AP4302

-+

--

-+

++

OUTPUT 4

INPUT 4-

INPUT 4+

GND

CATHODE

OUTPUT 3

INPUT 3-

INPUT 3+

VREF

OUTPUT 2

INPUT 2-

INPUT 2+

VCC

INPUT 1+

INPUT 1-

OUTPUT 1 1

2

3

4

5

6

7

8

16

15

14

13

12

11

10

9

(SOIC-16/DIP-16)

M Package/P Package

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Figure 5. Voltage Reference Functional Block Diagram

Functional Block Diagram (Continued)

Figure 4. Op Amp Functional Block Diagram

(Each Amplifier)

Q2

Q4

Q3

Q1

Q8 Q9

6µA4µA

Q10

Q11

50uA

Q5

Q6

Q13

Rsc

Cc

100µA

Q7

INPUT-

INPUT+ OUTPUT

Q12

VCC

CATHODE

GND

VREF

20µA20µA

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Package Voltage Tol-

erance Tempera-

ture Range Part Number Marking ID Packing

Type

Tin Lead Lead Free Tin Lead Lead Free

DIP-16 0.5% -40 to 85oC AP4302AP AP4302AP-E1 AP4302AP AP4302AP-E1 Tube

1% AP4302BP AP4302BP-E1 AP4302BP AP4302BP-E1

SOIC-16

0.5% -40 to 85oC

AP4302AM AP4302AM-E1 AP4302AM AP4302AM-E1 Tube

AP4302AMTR AP4302AMTR-E1 AP4302AM AP4302AM-E1 Tape & Reel

1% AP4302BM AP4302BM-E1 AP4302BM AP4302BM-E1 Tube

AP4302BMTR AP4302BMTR-E1 AP4302BM AP4302BM-E1 Tape & Reel

BCD Semiconductor's Pb-free products, as designated with "E1" suffix in the part number, are RoHS compliant.

Circuit Type

Voltage Tolerance

A: 0.5%

B: 1% Package

P: DIP-16

M: SOIC-16

AP4302 -

E1: Lead-free

Blank: Tin Lead

TR: Tape and Reel

Blank: Tube

Ordering Information

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

5

Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Parameter Min Max Unit

Supply Voltage 3 18 V

Ambient Temperature -40 85 oC

Recommended Operating Conditions

Note 1: Stress es greater than those listed under "Absolute Maximum Ratings" may cause permanent damage to the

device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond

those indicated under "Recommended Operating Conditions" is not implied. Exposure to "Absolute Maximum

Ratings " for extended periods may affect device reliability.

Parameter Symbol Value Unit

Power Supply Voltage (VCC to GND) VCC 20 V

Input Voltage Range VIN -0.3 to VCC + 0.3 V

Op Amp Input Differential Voltage VID 20 V

Voltage Reference Cathode Curren t IK 100 mA

Power Dissipation DIP-16 PD 1000 mW

SOIC-16 1000

Storage Temperature Range TSTG -65 to 150 oC

ESD Protection Vo ltage (Machine Model) >200 V

Absolute Maximum Ratings (Note 1)

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.

Electrical Characteristics

Parameter Conditions Min Typ Max Unit

Total Supply Current, Excluding

Current in Voltage Reference VCC = 5V, no load , -40oC ≤TA ≤85oC1.0 1.6 mA

VCC = 18V, no loa d , -40oC ≤TA ≤85oC1.2 2.4

Voltage Reference Section

Reference Voltage IKA = 10mA

TA = 25oC

0.5% tolerance 2.487 2.500 2.513 V

1% tolerance 2.475 2.525

Reference Voltage Deviation over

Full Temperature Range IKA = 10mA, TA = -40 to 85oC524mV

Minimum Cathode Current

for Regulation 0.1 0.2 mA

Ratio of Change in VREF to that of

Cathode Voltage IKA= 10mA VREF to 10V 1.0 2.7 mV/V

10V to 18V 0.5 2.0

Reference Current IKA = 10mA, R1 = 10K, R2 = ∞0.7 4 µA

The Deviation of Reference Current

over Temperature VKA = VREF, IKA = 10mA,

TA = -40 to 85oC

0.4 1.2 µA

Off-State Cathode Current VREF = 0, VKA = 18V 0.05 1.0 µA

Dynamic Impedance IKA = 1.0 to 80mA, f<1kHz 0.2 0.5 Ω

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Electrical Characteristics (Continued)

Operating Conditions: VCC = +5V, TA= 25oC unless otherwise specified.

Parameter Conditions Min Typ Max Unit

Op Amp Section (per Op Amp)

(VCC = 5V, VO = 1.4V, TA = 25oC, unless otherwise noted)

Input Offset Voltage TA = 25oC0.5 3 mV

TA = -40 to 85oC5

Input Offset Voltage Temperature

Drift TA = -40 to 85oC 7 µV/o C

Input Offset Current TA = 25oC230nA

Input Bias Current TA = 25oC 20 150 nA

Input Voltage Range VCC = 0 to 18V 0 VCC -

1.5 V

Common Mode Rejection Ratio TA = 25oC, VCM = 0 to 3.5V 70 85 dB

Large Signa l Voltage Gain VCC = 15V, RL = 2kΩ, VO = 1.4 to 11.4V 85 100 dB

Power Supply Rejection Ratio VCC = 5 to 18V 70 90 dB

Output Current Source VCC = 15V, VID = 1V, VO = 2V 20 40 mA

Sink VCC = 15V, VID = -1V, VO = 2V 10 20 mA

Output Voltage Swing (High) VCC = 18, RL = 10kΩ, VID = 1V 16 16.5 V

Output Voltage Swing (Low) VCC = 18, RL = 10kΩ, VID = -1V 17 100 mV

Slew Rate VCC = 18V, RL = 2kΩ, AV = 1,

VIN = 0.5 to 2V, CL = 100pF 0.3 0.5 V/µ s

Gain Bandwidth Product VCC = 18V, RL = 2kΩ, CL = 100pF,

VIN = 10mV, f=100kHz 0.7 1MHz

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Typical Performance Characteristics

Figure 6. Cathode Current vs. Cathode Voltage

-2 -1 0 1 2 3

-100

-50

0

50

100

150

Cathode Current (mA)

Cathode Voltage (V)

VKA=VREF

TA=250C

1K 10K 100K 1000K

0

10

20

30

40

50

60

0

10

20

30

40

50

60

TA = 25oC

IKA = 10mA

Av (dB)

Small Signal Frequency

Figure 7. Voltage Refere nce Small Signal Voltage Gain

vs. Frequency

Figure 8. Pulse Response of Input and Output Voltage Figure 9. Op Amp Voltage Gain

0246

0

1

2

3

4

5Input

Input and Output Volt age (V )

Time (µS)

Output

0 2 4 6 8 101214161820

60

70

80

90

100

110

Voltage Gain(d B)

Supply Voltage (V)

RL=2KΩ

RL=20KΩ

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Typical Performance Characteristics (Continued)

Figure 10. Op Amp Open Loop Frequency Response

-40 -20 0 20 40 60 80 100 120

0

5

10

15

20

25

30

Ambient Temperature (oC)

Input Bias Current (nA)

VCC=15V

Figure 11. Op Amp Input Current

1HZ 10HZ 100HZ 1kHZ 10kHZ 100kHZ 1MHZ

0

10

20

30

40

50

60

70

80

90

100

110

Voltage Gain (dB)

Frequen cy (Hz)

TA: -40oC to 85oC

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

Mechanical Dimensions

DIP-16 Unit: mm(inch)

18.800(0.740)

0.254(0.010) 2.540(0.100)

6°

4°

1.524(0.060)TYP

5°

4°

6°

Φ3.000(0.118)

Depth

0.050(0.002)

0.150(0.006)

0.700(0.028)

19.200(0.756)

R0.750(0.030)

6.200(0.244)

3.000(0.118)

3.600(0.142)

3.710(0.146)

4.310(0.170)

0.510(0.020)MIN

0.360(0.014)

0.560(0.022)

6.600(0.260)

8.200(0.323)

9.400(0.370)

0.204(0.008)

0.360(0.014)

3.200(0.126)

3.600(0.142)

7.620(0.300)TYP

TYP

QUAD OP AMP AND VOLTAGE REFERENCE AP4302

Data Sheet

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Apr. 2005 Rev. 1. 1 BCD Semiconductor Manufacturing Limited

SOIC-16 Unit: mm(inch)

7°

10.000(0.394)

6.040(0.238)

0.406(0.016)

20:1

A

1.650(0.065) 0.700(0.028)

7°

1°

5°

B

C

1.000(0.039)

S 1.000(0.039)

0.200(0.008)

20:1

B

C

50:1

C-C

0.250(0.010)

0.200(0.008)MIN

0.500(0.020)

0.600(0.024)

0.250(0.010)

Depth 0.060(0.002)

0.100(0.004)

2.000(0.079)

1.300(0.051)

1.000(0.039)

1.270(0.050)

Depth 0.200(0.008)

0.250(0.010)

0.150(0.006)

R0.200(0.008)

0.203(0.008)

A

3.940(0.155)

3°

8°

9.5°

8°

7°

0.400(0.016)×45°

φ

Mechanical Dimensions (Continued)

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Room 2210, 22nd Fl, 333, Keelung Road, Sec. 1, TaiPei (110), Taiwan Tel: +886-2-2758 6828, Fax: +886-2-2758 6892

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ducts or specifications herein. BCD Semiconductor Manufacturing Limited does not assume any responsibility for

use of any its products for any part icular purp ose, nor d oes BCD Semiconducto r Manufacturi ng Limited assume any

liability arising out of the application or use of any its products or circuits. BCD Semiconductor Manufacturing Limi-

ted does not convey any license under its patent rights or other rights nor the rights of others.

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