VS-SA61BA60 www.vishay.com Vishay Semiconductors Single Phase Fast Recovery Bridge (Power Modules), 61 A FEATURES * Fast recovery time characteristic * Electrically isolated base plate * Simplified mechanical designs, rapid assembly * UL pending * Excellent power/volume ratio SOT-227 * Compliant to RoHS Directive 2011/65/EU * Designed and qualified for industrial and consumer level PRODUCT SUMMARY DESCRIPTION IT(AV) 61 A Type Modules - Bridge, Fast The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IO IFSM I2t VALUES UNITS 61 A TC 57 C 50 Hz 300 60 Hz 310 50 Hz 442 60 Hz 402 VRRM TJ A A2s 600 V - 55 to 150 C ELECTRICAL SPECIFICATIONS VOLTAGE RATINGS TYPE NUMBER SA61BA60 Revision: 29-Feb-12 VOLTAGE CODE VRRM, MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE V VRSM, MAXIMUM NON-REPETITIVE PEAK REVERSE VOLTAGE V IRRM MAXIMUM AT TJ MAXIMUM mA 60 600 700 10 Document Number: 94688 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 www.vishay.com Vishay Semiconductors FORWARD CONDUCTION PARAMETER SYMBOL Maximum DC output current at case temperature IO TEST CONDITIONS Resistive or inductive load t = 10 ms Maximum peak, one-cycle non-repetitive forward current IFSM t = 8.3 ms t = 10 ms t = 8.3 ms t = 10 ms Maximum I2t for fusing I2t t = 8.3 ms t = 10 ms t = 8.3 ms Maximum I2t for fusing I2t Value of threshold voltage VF(TO) Forward slope resistance rt Maximum forward voltage drop VFM RMS isolation voltage base plate VINS VALUES No voltage reapplied C A 250 260 Initial TJ = TJ maximum 442 402 A2s 313 284 I2t for time tx = I2t x tx0.1 tx 10 ms, VRRM = 0 V TJ maximum TJ = 25 C, IFM = 30 Apk A 57 310 100 % VRRM reapplied TJ = TJ maximum, IFM = 30 Apk 61 300 No voltage reapplied 100 % VRRM reapplied UNITS kA2s 4.4 0.914 V 10.5 m 1.33 tp = 400 s V 1.23 f = 50 Hz, t = 1 s 3000 RECOVERY CHARACTERISTICS PARAMETER Reverse recovery time, typical Reverse recovery current, typical SYMB OL trr Irr TEST CONDITIONS VALUES TJ = 25 C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/s 170 TJ = 125 C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/s 250 TJ = 25 C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/s 10.5 UNITS ns IFM t A TJ = 125 C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/s 16 TJ = 25 C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/s 900 TJ = 125 C, IF = 20 A, VR = 30 V, dIF/dt = 100 A/s 1970 Reverse recovery charge, typical Qrr Snap factor, typical S TJ = 25 C 0.6 - Junction capacitance, typical CT VR = 600 V 67 pF trr dIR dt Qrr IRM(REC) nC THERMAL AND MECHANICAL SPECIFICATIONS PARAMETER VALUES UNITS TJ, TStg - 55 to 150 C Maximum thermal resistance junction to case per bridge RthJC 0.30 Typical thermal resistance, case to heatsink per module RthCS Junction and storage temperature range SYMBOL TEST CONDITIONS C/W Mounting surface, smooth, flat and greased Approximate weight Mounting torque 10 % Case style Revision: 29-Feb-12 0.05 30 Bridge to heatsink g 1.3 Nm SOT-227 Document Number: 94688 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 Vishay Semiconductors 220 1000 100 TJ = 150 C Average Power Loss (W) 200 TJ = 125 C TJ = 25 C 10 180 (Sine) 160 140 180 (Rect) 120 100 80 60 40 0 0 0.5 1 1.5 2 2.5 3 0 3.5 10 20 30 40 50 VFM - Forward Voltage Drop (V) IF(AV) - Average Forward Current (A) Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 4 - Current Rating Characteristics 10 000 TJ = 150 C IR - Reverse Current (A) 180 20 1 1000 TJ = 125 C 100 TJ = 25 C 10 1 0.1 Allowable Case Temperature (C) IF - Instantaneous Forward Current (A) www.vishay.com 60 150 140 130 120 110 180 (Rect) 100 90 80 180 (Sine) 70 60 50 40 0 100 200 300 400 500 600 0 10 20 30 40 50 60 70 VR - Reverse Voltage (V) IF(AV) - Average Forward Current (A) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage Fig. 5 - Forward Power Loss Characteristics CT - Junction Capacitance (pF) 1000 100 10 10 100 1000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage Revision: 29-Feb-12 Document Number: 94688 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 ZthJC - Thermal Impedance (C/W) www.vishay.com Vishay Semiconductors 10 1 D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 0.1 PDM t1 t2 Notes: Single Pulse (Thermal Resistance) 1. Duty factor D = t1/ t2 2. Peak TJ = Pdm x ZthJC + Tc 0 .01 0.00001 0.0001 0.001 0.01 0.1 1 tp - Square Wave Pulse Duration (s) Fig. 6 - Typical Forward Voltage Drop Characteristics 300 IF = 20 A 250 VR = 30 V VR = 30 V IF = 30 A IF = 30 A 35 IF = 10 A IF = 20 A 125 C IRR (A) trr (ns) 200 25 125 C 150 15 25 C 100 IF = 10 A 25 C 5 50 100 1000 100 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt Fig. 9 - Typical Reverse Recovery Current vs. dIF/dt 4000 VR = 30 V IF = 30 A 3500 3000 Qrr (nC) IF = 20 A 2500 2000 125 C IF = 10 A 1500 1000 25 C 500 100 1000 dIF/dt (A/s) Fig. 8 - Typical Stored Charge vs. dIF/dt Revision: 29-Feb-12 Document Number: 94688 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 www.vishay.com Vishay Semiconductors VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D IRFP250 G S Fig. 10 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 11 - Reverse Recovery Waveform and Definitions Revision: 29-Feb-12 Document Number: 94688 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-SA61BA60 www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- S A 61 B A 60 1 2 3 4 5 6 7 1 - Vishay Semiconductors product 2 - S = Fast recovery diode 3 - A = Present Silicon Generation 4 - Current rating (61 = 61 A) 5 - Circuit configuration: B = Single phase bridge 6 - Package indicator: A = SOT-227, standard insulated base 7 - Voltage rating (60 = 600 V) CIRCUIT CONFIGURATION CIRCUIT CIRCUIT CONFIGURATION CODE CIRCUIT DRAWING 1 + 2 Single phase bridge B ~ 4 3 Revision: 29-Feb-12 Document Number: 94688 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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