72
5-3
Infrared LEDs
• No. 44 • No. 45
• No. 46 • No. 47
External Dimensions (unit: mm) (General tolerance: ±0.3)
■Absolute Maximum Ratings
Parameter
IF
∆IF
IFP
VR
Top
Tstg
Ratings
100
–1.33
1000
5
–30~+85
–30~+100
Unit
mA
mA/˚C
mA
V
˚C
˚C
Conditions
Above 25˚C
f=1kHz, tw
≤
10
µ
s
5.6
±0.2
23.0min1.0min A
Cathode
0.65max
Resin heap 1.5max
Resin burr 0.3max
5.0
±0.2
0.5
±0.1
0.5
±0.1
(1.0)
(2.54)
0.5
±0.1
0.5±0.1
Anode
Cathode
1.0min 21.0min 9.4±0.3
5.0±0.2
Resin heap 0.8max
Resin burr 0.3max
0.65
max
0.5±0.1
0.5±0.1
(2.54)
5.6
24.0min 8.5
±0.5
Anode
(2.54)
0.6
±0.1
1.1max
0.85
+0.1
Resin heap 1.5max
0.6
±0.1
0.6
±0.1
Resin burr 0.3max
4.8
±0.2
Cathode
2.0min (0.8)A
1.7
ø
3.8
0.4
1.0min 25.8min 3.5
±0.1
(1.3)
0.45
±0.1
0.65max
Resin burr 0.3max
Resin heap 1.5max
3.1
±0.1
Cathode
(2.54)
0.4
±0.1
(unit: mm)
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.3
1.5
1.3
1.3
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.5
1.8
1.5
1.5
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
Clear
130
200
60
110
250
80
130
180
200
50
7.0
14
940
940
940
940
940
940
940
940
940
850
940
940
×
×
×
×
™
×
×
×
×
×
×
×
44
45
46
47
(Constant voltage)
V
CC
=3V,
R=2.2Ω
I
F
=50mA
SID1010CM
SID1K10CM
SID1010CXM
SID1K10CXM
SID1050CM
SID303C
SID313BP
SID1003BQ
SID307BR
SID1G307C
SID2010C
SID2K10C
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAs
GaAlAs
GaAs
GaAs
5
φ
round type
SID 303C
SID 313BP
SID 1003BQ
SID 307BR
SID1G307C
Dimension A
3.0±0.5
3.6±0.5
4.2±0.5
Emitting
Color
Part No.
Optical Power I
e
(mW/sr)
Conditions
typ
Chip
Material
PeakWave-
length λP
(mm)
typ
Forward
Voltage
V
F
I
F
=10mA
(V)
typ max
Direct Mount
Fig. No.
Shape
Electro-Optical Characteristics (Ta=25˚C)
3
φ
round
type
Transparent
light purple
Transparent
light navy blue
Transparent
dark navy blue
