Unit Ratings IF mA 100 IF mA/C -1.33 Above 25C IFP mA 1000 f=1kHz, tw10s VR V 5 Top C -30~+85 Tstg C -30~+100 5 round type Conditions (V) (mW/sr) Conditions max typ typ Clear 1.3 1.5 130 940 GaAs SID1K10CM Clear 1.3 1.5 200 940 GaAs SID1010CXM Clear 1.3 1.5 60 940 GaAs SID1K10CXM Clear 1.3 1.5 110 (Constant voltage) 940 GaAs SID1050CM Clear 1.3 1.5 250 VCC=3V, 940 GaAs SID303C Clear 1.3 1.5 80 R=2.2 940 GaAs SID313BP Transparent light purple Transparent light navy blue Transparent dark navy blue 1.3 1.5 130 940 GaAs 1.3 1.5 180 940 GaAs 1.3 1.5 200 940 GaAs SID1G307C Clear 1.5 1.8 50 SID2010C Clear 1.3 1.5 7.0 SID2K10C Clear 1.3 1.5 14 SID307BR 850 GaAlAs IF=50mA External Dimensions (unit: mm) 940 GaAs 940 GaAs x x x x TM x x x x x x x 44 45 46 47 (General tolerance: 0.3) * No. 45 23.0min (1.0) A 21.0min Anode 9.40.3 Resin burr 0.3max Resin heap 0.8max Cathode 0.50.1 0.65max Resin burr 0.3max Resin heap 1.5max 0.50.1 0.50.1 0.50.1 1.0min (2.54) (2.54) Cathode 0.50.1 5.00.2 1.0min 0.65 max 5.6 5.00.2 0.2 0.50.1 * No. 44 (mm) Material typ SID1010CM SID1003BQ 3 round type Emitting Color Part No. Electro-Optical Characteristics (Ta=25C) Forward PeakWaveOptical Power Ie Voltage VF length P Chip IF=10mA Fig. No. Parameter Shape Absolute Maximum Ratings Direct Mount Infrared LEDs 5-3 Cathode (0.8) 1.0min 25.8min (1.3) 1.7 3.50.1 Resin burr 0.3max Resin heap 1.5max 0.60.1 0.4 Resin heap 1.5max 0.4 0.450.1 Resin burr 0.3max 0.1 4.80.2 Cathode 1.1max 0.85+0.1 0.60.1 0.60.1 (2.54) 5.6 8.5 A (2.54) 24.0min Anode o3.8 2.0min 3.10.1 * No. 47 0.5 0.65max * No. 46 (unit: mm) Dimension A SID 303C SID 313BP SID 1003BQ SID 307BR SID1G307C 72 3.00.5 3.60.5 4.20.5