NSVBC858AWT1G - ON SEMICONDUCTOR

April, 2015 − Rev. 4 1Publication Order Number:

BC856BWT1/D

BC856B, BC857B, BC858A

General Purpose

Transistors

PNP Silicon

These transistors are designed for general purpose amplifier

applications. They are housed in the SC−70/SOT−323 which is

designed for low power surface mount applications.

Features

•S and NSV Prefix for Automotive and Other Applications Requiring

Unique Site and Control Change Requirements; AEC−Q101

Qualified and PPAP Capable

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

MAXIMUM RATINGS (TA = 25°C unless otherwise noted)

Rating Symbol Value Unit

Collector-Emitter Voltage BC856

BC857

BC858

VCEO −65

−45

−30

Collector-Base Voltage BC856

BC857

BC858

VCBO −80

−50

−30

Emitter−Base Voltage VEBO −5.0 V

Collector Current − Continuous IC−100 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board,

(Note 1) TA = 25°CPD150 mW

Thermal Resistance,

Junction−to−Ambient RqJA 883 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding those listed in the Maximum Ratings table may damage the

device. If any of these limits are exceeded, device functionality should not be

assumed, damage may occur and reliability may be af fected.

1. FR−5 = 1.0 x 0.75 x 0.062 in.

www.onsemi.com

SC−70/SOT−323

CASE 419

STYLE 3

MARKING DIAGRAM

COLLECTOR

BASE

EMITTER

See detailed ordering and shipping information in the packag

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

XX M G

XX = Specific Device Code

M = Date Code*

G= Pb−Free Package

*Date Code orientation may vary depending up-

on manufacturing location.

(Note: Microdot may be in either location)

BC856B, BC857B, BC858A

www.onsemi.com

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage BC856

(IC = −10 mA) BC857

BC858

V(BR)CEO −65

−45

−30

−

Collector−Emitter Breakdown Voltage BC856

(IC = −10 mA, VEB = 0) BC857

BC858

V(BR)CES −80

−50

−30

−

Collector−Base Breakdown Voltage BC856

(IC = −10 mA) BC857

BC858

V(BR)CBO −80

−50

−30

−

Emitter−Base Breakdown Voltage BC856

(IE = −1.0 mA) BC857

BC858

V(BR)EBO −5.0

−5.0

−

Collector Cutoff Current (VCB = −30 V)

Collector Cutoff Current (VCB = −30 V, TA = 150°C) ICBO −

−−

−−15

−4.0 nA

ON CHARACTERISTICS

DC Current Gain BC856A, BC585A

(IC = −10 mA, VCE = −5.0 V) BC856B, BC857B, BC858B

BC857C

(IC = −2.0 mA, VCE = −5.0 V) BC856A, BC858A

BC856B, BC857B, BC858B

BC857C

hFE −

−

125

220

420

150

270

180

290

520

−

250

475

800

−

Collector−Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VCE(sat) −

−−

−−0.3

−0.65

Base−Emitter Saturation Voltage

(IC = −10 mA, IB = −0.5 mA)

(IC = −100 mA, IB = −5.0 mA)

VBE(sat) −

−−0.7

−0.9 −

−

Base−Emitter On Voltage

(IC = −2.0 mA, VCE = −5.0 V)

(IC = −10 mA, VCE = −5.0 V)

VBE(on) −0.6

−−

−−0.75

−0.82

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(IC = −10 mA, VCE = −5.0 Vdc, f = 100 MHz) fT100 − − MHz

Output Capacitance

(VCB = −10 V, f = 1.0 MHz) Cob − − 4.5 pF

Noise Figure

(IC = −0.2 mA, VCE = −5.0 Vdc, RS = 2.0 kW,

f = 1.0 kHz, BW = 200 Hz)

NF − − 10 dB

BC856B, BC857B, BC858A

www.onsemi.com

BC857/BC858

Figure 1. Normalized DC Current Gain

IC, COLLECTOR CURRENT (mAdc)

2.0

Figure 2. “Saturation” and “On” Voltages

IC, COLLECTOR CURRENT (mAdc)

-0.2

0.2

Figure 3. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 4. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-0.6

-0.7

-0.8

-0.9

-1.0

-0.5

-0.2

-0.4

-0.1

-0.3

1.6

1.2

2.0

2.8

2.4

-1.2

-1.6

-2.0

-0.02 -1.0 -10

0-20

-0.1

-0.4

-0.8

hFE, NORMALIZED DC CURRENT GAIN

V, VOLTAGE (VOLTS)

VCE, COLLECTOR-EMITTER VOLTAGE (V)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

1.5

1.0

0.7

0.5

0.3

-0.2 -10 -100

-1.0

TA = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE(on) @ VCE = -10 V

VCE = -10 V

TA = 25°C

-55°C to +125°C

IC = -100 mA

IC = -20 mA

-0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100

IC = -200 mAIC = -50 mAIC =

-10 mA

Figure 5. Capacitances

VR, REVERSE VOLTAGE (VOLTS)

Figure 6. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mAdc)

-0.4

1.0

100

200

300

400

7.0

5.0

3.0

2.0

-0.5

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)

TA = 25°C

Cob

Cib

-0.6 -1.0 -2.0 -4.0 -6.0 -10 -20 -30 -40

150

-1.0 -2.0 -3.0 -5.0 -10 -20 -30 -50

VCE = -10 V

TA = 25°C

1.0

BC856B, BC857B, BC858A

www.onsemi.com

BC856

Figure 7. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 8. “On” Voltage

IC, COLLECTOR CURRENT (mA)

-0.8

-1.0

-0.6

-0.2

-0.4

1.0

2.0

-0.1 -1.0 -10 -200

-0.2

0.2

0.5

-0.2 -1.0 -10 -200

TJ = 25°C

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VBE @ VCE = -5.0 V

Figure 9. Collector Saturation Region

IB, BASE CURRENT (mA)

Figure 10. Base−Emitter Temperature Coefficient

IC, COLLECTOR CURRENT (mA)

-1.0

-1.2

-1.6

-2.0

-0.02 -1.0 -10

0-20

-0.1

-0.4

-0.8

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

VB, TEMPERATURE COEFFICIENT (mV/ C)°θ

-0.2 -2.0 -10 -200

-1.0

TJ = 25°C

IC =

-10 mA

hFE, DC CURRENT GAIN (NORMALIZED)

V, VOLTAGE (VOLTS)

VCE = -5.0 V

TA = 25°C

0-0.5 -2.0 -5.0 -20 -50 -100

-0.05 -0.2 -0.5 -2.0 -5.0

-100 mA

-20 mA

-1.4

-1.8

-2.2

-2.6

-3.0

-0.5 -5.0 -20 -50 -100

-55°C to 125°C

qVB for VBE

-2.0 -5.0 -20 -50 -100

Figure 11. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

Figure 12. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

-0.1 -0.2 -1.0 -50

2.0 -2.0 -10 -100

100

200

500

6.0

4.0

-1.0 -10 -100

VCE = -5.0 V

C, CAPACITANCE (pF)

f, CURRENT-GAIN - BANDWIDTH PRODUCT

-0.5 -5.0 -20

TJ = 25°C

Cob

Cib

8.0

-50 mA -200 mA

BC856B, BC857B, BC858A

www.onsemi.com

Figure 13. Thermal Response

t, TIME (ms)

1.0

r(t), TRANSIENT THERMAL

2.0 5.01.00.50.20.1

RESISTANCE (NORMALIZED)

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.01

20 5010 200 500100 1.0k 2.0k 5.0k 10k

Figure 14. Active Region Safe Operating Area

VCE, COLLECTOR-EMITTER VOLTAGE (V)

-200

-1.0

IC, COLLECTOR CURRENT (mA)

TA = 25°C

D = 0.5

0.2

0.1 0.05 SINGLE PULSE

SINGLE PULSE

BONDING WIRE LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

3 ms

TJ = 25°C

ZqJC(t) = r(t) RqJC

RqJC = 83.3°C/W MAX

ZqJA(t) = r(t) RqJA

RqJA = 200°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) − TC = P(pk) RqJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

-100

-50

-10

-5.0

-2.0

-5.0 -10 -30 -45 -65 -100

1 s

BC858

BC857

BC856

The safe operating area curves indicate IC−VCE lim

its of the transistor that must be observed for reliable oper

ation. Collector load lines for specific circuits must fal

below the limits indicated by the applicable curve.

The data of Figure 14 is based upon TJ(pk) = 150°C; T C

or TA is variable depending upon conditions. Pulse curve

are valid for duty cycles to 10% provided TJ(pk) ≤ 150°C

TJ(pk) may be calculated from the data in Figure 13. A

high case or ambient temperatures, thermal limitation

will reduce the power that can be handled to values les

than the limitations imposed by the secondary breakdown

ORDERING INFORMATION

Device Marking Package Shipping†

BC856BWT1G 3B SC−70/SOT−323

(Pb−Free) 3,000 / Tape & Reel

SBC856BWT1G*

BC857BWT1G 3F SC−70/SOT−323

(Pb−Free) 3,000 / Tape & Reel

SBC857BWT1G*

BC857CWT1G 3G SC−70/SOT−323

(Pb−Free) 3,000 / Tape & Reel

NSVBC857CWT1G*

BC858AWT1G 3J SC−70/SOT−323

(Pb−Free) 3,000 / Tape & Reel

BC858BWT1G 3K SC−70/SOT−323

(Pb−Free) 3,000 / Tape & Reel

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

*S and NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and

PPAP Capable.

BC856B, BC857B, BC858A

www.onsemi.com

PACKAGE DIMENSIONS

SC−70 (SOT−323)

CASE 419−04

ISSUE N

STYLE 3:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

AA2

De1

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

0.05 (0.002)

1.9

0.075

0.65

0.025

0.65

0.025

0.9

0.035

0.7

0.028 ǒmm

inchesǓ

SCALE 10:1

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

DIM

AMIN NOM MAX MIN

MILLIMETERS

0.80 0.90 1.00 0.032

INCHES

A1 0.00 0.05 0.10 0.000

A2 0.70 REF

b0.30 0.35 0.40 0.012

c0.10 0.18 0.25 0.004

D1.80 2.10 2.20 0.071

E1.15 1.24 1.35 0.045

e1.20 1.30 1.40 0.047

0.035 0.040

0.002 0.004

0.014 0.016

0.007 0.010

0.083 0.087

0.049 0.053

0.051 0.055

NOM MAX

L2.00 2.10 2.40 0.079 0.083 0.095

e1 0.65 BSC

0.38

0.028 REF

0.026 BSC

0.015

0.20 0.56 0.008 0.022

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty , representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, af filiates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

UBLICATION ORDERING INFORMATION

N. American Technical Support: 800−282−9855 Toll Free

USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81−3−5817−1050

BC856BWT1/D

LITERATURE FULFILLMENT:

Literature Distribution Center for ON Semiconductor

P.O. Box 5163, Denver, Colorado 80217 USA

Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada

Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada

Email: orderlit@onsemi.com

ON Semiconductor Website: www.onsemi.com

Order Literature: http://www.onsemi.com/orderlit

For additional information, please contact your loc

Sales Representative