ATP206
No. A1395-1/7
1 : Gate
2 : Drain
3 : Source
4 : Drain
SANYO : ATPA
K
0.7
0.4
0.55
9.5
7.3 0.5
1.7
4.6
6.05
13
2
6.5
0.6
4
0.8
0.5
1.5
0.4 2.6
4.6
0.4
0.1
2.3 2.3
ATP206-TL-H
Features
• Low ON-resistance • Large current
•
4.5V drive • Slim package
•
Halogen free compliance • Protection diode in
Specifi cations
Absolute Maximum Ratings at Ta=25°C
Parameter Symbol Conditions Ratings Unit
Drain-to-Source Voltage VDSS 40 V
Gate-to-Source Voltage VGSS ±20 V
Drain Current (DC) ID40 A
Drain Current (PW≤10μs) IDP PW≤10μs, duty cycle≤1% 120 A
Allowable Power Dissipation PDTc=25°C40W
Channel Temperature Tch 150 °C
Storage Temperature Tstg --55 to +150 °C
Avalanche Energy (Single Pulse) *1 EAS 26 mJ
Avalanche Current *2 IAV 20 A
Note :
*1 VDD=10V, L=100μH, IAV=20A
*2 L≤100μH, Single pulse
Package Dimensions
unit : mm (typ)
7057-001
Ordering number : ENA1395A
61312 TKIM/10709PA MS IM TC-00001774
ATP206
N-Channel Silicon MOSFET
General-Purpose Switching Device
Applications
http://semicon.sanyo.com/en/network
Product & Package Information
• Package : ATPAK
• JEITA, JEDEC : -
• Minimum Packing Quantity : 3,000 pcs./reel
Packing Type: TL Marking
Electrical Connection
TL
ATP206
LOT No.
1
3
2,4
SANYO Semiconductors
DATA SHEET
ATP206
No. A1395-2/7
Electrical Characteristics at Ta=25°C
Parameter Symbol Conditions Ratings Unit
min typ max
Drain-to-Source Breakdown Voltage V(BR)DSS ID=1mA, VGS=0V 40 V
Zero-Gate Voltage Drain Current IDSS V
DS=40V, VGS=0V 1μA
Gate-to-Source Leakage Current IGSS VGS=±16V, VDS=0V ±10 μA
Cutoff Voltage VGS(off) VDS=10V, ID=1mA 1.5 2.6 V
Forward T ransfer Admittance | yfs |VDS=10V, ID=20A915 S
Static Drain-to-Source On-State Resistance
RDS(on)1 ID=20A, VGS=10V 12 16 mΩ
RDS(on)2 ID=10A, VGS=4.5V 20 28 mΩ
Input Capacitance Ciss VDS=20V, f=1MHz 1630 pF
Output Capacitance Coss 205 pF
Reverse Transfer Capacitance Crss 110 pF
Turn-ON Delay Time td(on)
See specifi ed Test Circuit.
19 ns
Rise Time tr 110 ns
Turn-OFF Delay Time td(off) 83 ns
Fall Time tf73 ns
Total Gate Charge Qg VDS=20V, VGS=10V, ID=40A 27 nC
Gate-to-Source Charge Qgs 7.0 nC
Gate-to-Drain “Miller” Charge Qgd 5.2 nC
Diode Forward Voltage VSD IS=40A, VGS=0V 0.99
1.2
V
Switching Time Test Circuit
Ordering Information
Device Package Shipping memo
ATP206-TL-H ATPAK 3,000pcs./reel Pb Free and Halogen Free
PW=10μs
D.C.≤1%
P.G 50Ω
G
S
D
ID=20A
RL=1Ω
VDD=20V
VOUT
ATP206
VIN
10V
0V
VIN
ATP206
No. A1395-3/7
IT14333 IT14334
IT14335 IT14336
--60 --20--40 0 20 40 60 80 100 160120 140
0
0
35
30
40
25
20
15
10
2.00.5 1.51.0
5
0
35
30
40
25
20
15
10
5
0
35
30
40
25
20
15
10
5
0
60
50
40
30
20
10
0 6.05.55.04.51.0 3.50.5 3.02.51.5 2.0 4.0
16.0V
6.0V
4.5V
10.0V
Tc=25°CVDS=10V
VGS=3.5V
IT14338
0.20 0.4 0.6 0.8 1.21.0
0.001
0.01
0.1
10
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
100
7
5
3
2
1.0
IT14337
25°C
--25°C
Tc=75°C
0.1 23 57 23 57 23 57
1.0 10
1.0
10
5
7
3
2
3
5
2
3
5
7
VDS=10V
Tc= --25°C
75°C
VGS=0V
Single pulse
--25°C
75
°
C
Tc=75°C
Tc= --25
°
C
25°C
5151613971114624310812
ID=10A 20A
Single pulse
Tc=25°CSingle pulse
VGS=10.0V, ID=20A
VGS=4.5V, ID=10A
4.0V
25°C
8.0V
25°C
IT14339
10
100
3
2
2
5
5
7
7
3
5
0.1 1.0
23 57 23 57 23 57
10 100
VDD=20V
VGS=10V
td(off)
tr
tf
td(on)
0
100
1000
7
7
5
5
3
2
5
3
2
10 30 4020515 3525
IT14340
f=1MHz
Ciss
Coss
Crss
Drain-to-Source Voltage, VDS -- V
Drain Current, ID -- A
Gate-to-Source Voltage, VGS -- V
Drain Current, ID -- A
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Static Drain-to-Source
On-State Resistance, RDS(on) -- mΩ
Case Temperature, Tc -- °C
Drain Current, ID -- A Diode Forward Voltage, VSD -- V
Source Current, IS -- A
Gate-to-Source Voltage, VGS -- V
ID -- VDS ID -- VGS
RDS(on) -- VGS RDS(on) -- Tc
IS -- VSD
Drain Current, ID -- A
Switching Time, SW Time -- ns
SW Time -- ID
Drain-to-Source Voltage, VDS -- V
Ciss, Coss, Crss -- pF
Ciss, Coss, Crss -- VDS
| yfs | -- ID
Forward T ransfer Admittance, | yfs | -- S
ATP206
No. A1395-4/7
IT14342IT14341
IT14343
0
0
1
2
3
4
5
6
7
8
3025
10
9
2010515
0
025 50 75 100 125 150
100
80
60
20
40
120
175
IT10478
VDS=20V
ID=40A
0.1
1.0
2
0.1 1.0 10 723 5723 5723 5
10
100
3
5
7
2
3
5
7
2
3
5
7
2
3
0
020 40 60 80 100 140120
5
10
30
40
25
20
45
35
15
160
IDP=120A
Operation in
this area is
limited by RDS(on).
Tc=25°C
Single pulse
DC operation
100ms
10ms
1ms
100μs
10μs
ID=40A
Total Gate Charge, Qg -- nC
Gate-to-Source Voltage, VGS -- V
VGS -- Qg
EAS -- Ta
Avalanche Energy derating factor -- %
Ambient Temperature, Ta -- °C
Drain-to-Source Voltage, VDS -- V
A S O
Drain Current, ID -- A
Allowable Power Dissipation, PD -- W
PD -- Tc
Case Temperature, Tc -- °C
PW≤10μs
ATP206
No. A1395-5/7
Taping Specifi cation
ATP206-TL-H
ATP206
No. A1395-6/7
Outline Drawing Land Pattern Example
ATP206-TL-H
Mass (g) Unit
0.266
* For reference
mm Unit: mm
6.5
6.71.6 2
2.3 2.3
1.5
ATP206
No. A1395-7/7 PS
This catalog provides information as of June, 2012. Specifi cations and information herein are subject
to change without notice.
Note on usage : Since the ATP206 is a MOSFET product, please avoid using this device in the vicinity
of highly charged objects.
Any and all SANYO Semiconductor Co.,Ltd. products described or contained herein are, with regard to
"standard application", intended for the use as general electronics equipment. The products mentioned herein
shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life,
aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal
system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten
human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they
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different from current conditions on the usage of automotive device, communication device, office equipment,
industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.)
prior to the intended use. If there is no consultation or inquiry before the intended use, our customer shall be
solely responsible for the use.
Specifications of any and all SANYO Semiconductor Co.,Ltd. products described or contained herein stipulate
the performance, characteristics, and functions of the described products in the independent state, and are
not guarantees of the performance, characteristics, and functions of the described products as mounted in the
customer's products or equipment. To verify symptoms and states that cannot be evaluated in an
independent device, the customer should always evaluate and test devices mounted in the customer's
products or equipment.
SANYO Semiconductor Co.,Ltd. assumes no responsibility for equipment failures that result from using
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condition ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor
Co.,Ltd. products described or contained herein.
Regarding monolithic semiconductors, if you should intend to use this IC continuously under high temperature,
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