IRLZ44NS/LPbF
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient 0.070 V/°C Reference to 25°C, ID = 1mA
0.022 VGS = 10V, ID = 25A
0.025 ΩVGS = 5.0V, ID = 25A
0.035 VGS = 4.0V, ID = 21A
VGS(th) Gate Threshold Voltage 1.0 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 21 S VDS = 25V, ID = 25A
25 VDS = 55V, VGS = 0V
250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage 100 nA VGS = 16V
Gate-to-Source Reverse Leakage -100 VGS = -16V
QgTotal Gate Charge 48 ID = 25A
Qgs Gate-to-Source Charge 8.6 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 25 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time 11 VDD = 28V
trRise Time 84 ID = 25A
td(off) Turn-Off Delay Time 26 RG = 3.4Ω, VGS = 5.0V
tfFall Time 15 RD = 1.1Ω, See Fig. 10
Between lead,
and center of die contact
Ciss Input Capacitance 1700 VGS = 0V
Coss Output Capacitance 400 pF VDS = 25V
Crss Reverse Transfer Capacitance 150 = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
IGSS
RDS(on) Static Drain-to-Source On-Resistance
LSInternal Source Inductance 7.5
ns
IDSS Drain-to-Source Leakage Current µA
Parameter Min. Typ. Max. Units Conditions
I
SContinuous Source Current MOSFET symbol
(Body Diode) showing the
ISM Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
VSD Diode Forward Voltage 1.3 V TJ = 25°C, IS = 25A, VGS = 0V
trr Reverse Recovery Time 80 120 ns TJ = 25°C, IF = 25A
Qrr Reverse Recovery Charge 210 320 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
47
160
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Uses IRLZ44N data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 25A, di/dt ≤ 270A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L =470µH
RG = 25Ω, IAS = 25A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )