35
VTB Proc ess Photodiodes VTB6061BH
PRODUCT DESCRIPTION
Large area planar silicon photodiode in a “flat”
window, dual lead TO-8 package. The package
incorporates an infrared rejection filter. Cathode
is common to the case. These diodes have ver y
high shunt resistance and have good blue
response.
PACKAGE DIMENSIONS inch (mm)
CASE 15 TO-8 HERMETIC
CHIP ACTIVE A REA: .058 in
2
(37.7 mm
2
)
ABSOLUTE MAXIMUM RATINGS
St or ag e Tem per at u r e: -4 0°C t o 11 0°C
Oper ati ng Temp er atur e: -4 0°C t o 11 0°C
ELECTRO-OP T ICA L CHA RACTERI STICS @ 25°C (See also VTB curves, pages 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTB6061BH UNITS
Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 26 35 µA
TC ISC ISC Temperature Coefficient 2850 K .02 .08 %/ °C
VOC Open Circuit Voltage H = 100 fc, 2850 K 420 mV
TC VOC VOC Temperature Coefficient 2850 K -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 2.0 nA
RSH Shunt Resistance H = 0, V = 10 mV .10 GΩ
TC RSH RSH Temperature Coefficient H = 0, V = 10 mV -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 8.0 nF
λrange Spectral Application Range 330 720 nm
λpSpectral Respo nse - Peak 580 nm
VBR Breakdown Voltage 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±55 Degrees
NEP Noise Equivalent Power 1.0 x 10-13 (Typ.)
D* Specif ic Detectivit y 6.1 x 10 12 (Typ.) WHz⁄
cm Hz W⁄
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
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