SMBJ SERIES Taiwan Semiconductor 600W, 5V - 170V Surface Mount Transient Voltage Suppressor FEATURES KEY PARAMETERS Ideal for automated placement Glass passivated junction Excellent clamping capability Fast response time: Typically less than 1.0ps Typical IR less than 1A above 10V Moisture sensitivity level: level 1, per J-STD-020 AEC-Q101 qualified available: ordering code with suffix "H" Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC PARAMETER VALUE UNIT VWM 5 - 170 V VBR (uni - directional) 6.4 - 231 V VBR (bi - directional) 6.4 - 231 V PPK 600 W TJ MAX 150 C Package DO-214AA (SMB) Configuration Single Die APPLICATIONS Switching mode power supply (SMPS) MECHANICAL DATA Case: DO-214AA (SMB) Molding compound meets UL 94V-0 flammability rating Terminal: Matte tin plated leads, solderable per J-STD-002 Meet JESD 201 class 2 whisker test Polarity: As marked Weight: 0.09 g (approximately) DO-214AA (SMB) ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise noted) PARAMETER Non-repetitive peak impulse power dissipation with (1) 10/1000s waveform Steady state power dissipation at TA=25C Peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load for Uni-directional only (2) Forward Voltage @ IF=50A for Uni-directional only SYMBOL VALUE UNIT PPK 600 W PD 3 W IFSM 100 A VF 3.5 / 5.0 V TJ - 55 to +150 C TSTG - 55 to +150 C Junction temperature Storage temperature Notes: 1. Non-repetitive current pulse per Fig. 3 and derated above TA=25C per Fig. 2 2. VF=3.5V on SMBJ5.0 - SMBJ90 devices and VF=5.0V on SMBJ100 - SMBJ170 devices Devices for Bipolar Applications 1. For bidirectional use C or CA suffix for types SMBJ5.0 - types SMBJ170 2. Electrical characteristics apply in both directions 1 Version: P1812 SMBJ SERIES Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER SYMBOL TYP UNIT Junction-to-Case Thermal Resistance RJC 10 C/W Junction-to-Ambient Thermal Resistance RJA 55 C/W ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) Part number SMBJ5.0 SMBJ5.0A SMBJ6.0 SMBJ6.0A SMBJ6.5 SMBJ6.5A SMBJ7.0 SMBJ7.0A SMBJ7.5 SMBJ7.5A SMBJ8.0 SMBJ8.0A SMBJ8.5 SMBJ8.5A SMBJ9.0 SMBJ9.0A SMBJ10 SMBJ10A SMBJ11 SMBJ11A SMBJ12 SMBJ12A SMBJ13 SMBJ13A SMBJ14 SMBJ14A SMBJ15 SMBJ15A SMBJ16 SMBJ16A SMBJ17 SMBJ17A SMBJ18 SMBJ18A SMBJ20 SMBJ20A SMBJ22 SMBJ22A SMBJ24 SMBJ24A SMBJ26 SMBJ26A Marking code KD KE KF KG KH KK KL KM KN KP KQ KR KS KT KU KV KW KX KY KZ LD LE LF LG LH LK LL LM LN LP LQ LR LS LT LU LV LW LX LY LZ MD ME Breakdown voltage VBR@IT (V) (Note 1) Min. 6.40 6.40 6.67 6.67 7.22 7.22 7.78 7.78 8.33 8.33 8.89 8.89 9.44 9.44 10.0 10.0 11.1 11.1 12.2 12.2 13.3 13.3 14.4 14.4 15.6 15.6 16.7 16.7 17.8 17.8 18.9 18.9 20.0 20.0 22.2 22.2 24.4 24.4 26.7 26.7 28.9 28.9 Max. 7.30 7.00 8.15 7.37 8.82 7.98 9.51 8.60 10.3 9.21 10.9 9.83 11.5 10.4 12.2 11.1 13.6 12.3 14.9 13.5 16.3 14.7 17.6 15.9 19.1 17.2 20.4 18.5 21.8 19.7 23.1 20.9 24.4 22.1 27.1 24.5 29.8 26.9 32.6 29.5 35.3 31.9 Test current IT (mA) Working stand-off voltage VWM (V) Maximum blocking leakage current ID@VWM (A) Maximum peak impulse current IPP (A) (Note 2) Maximum clamping voltage VC@IPP (V) 10 10 10 10 10 10 10 10 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 5.0 5.0 6.0 6.0 6.5 6.5 7.0 7.0 7.5 7.5 8.0 8.0 8.5 8.5 9.0 9.0 10 10 11 11 12 12 13 13 14 14 15 15 16 16 17 17 18 18 20 20 22 22 24 24 26 26 800 800 800 800 500 500 200 200 100 100 50 50 10 10 5 5 5 5 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 65.0 68.0 55.0 61.0 51.0 56.0 47.0 52.0 44.0 48.0 42.0 46.0 39.0 43.0 37.0 40.0 33.0 37.0 31.0 34.0 28.0 31.0 26.0 29.0 24.4 27.0 23.1 25.1 21.8 24.2 20.0 22.8 19.5 21.5 17.6 19.4 15.0 17.7 14.6 16.0 13.5 14.9 9.6 9.2 11.4 10.3 12.3 11.2 13.3 12.0 14.3 12.9 15.0 13.6 15.9 14.4 16.9 15.4 18.8 17.0 20.1 18.2 22.0 19.9 23.8 21.5 25.8 23.2 26.9 24.4 28.8 26.0 30.5 27.6 32.2 29.2 35.8 32.4 39.4 35.5 43.0 38.9 46.6 42.1 2 Version: P1812 SMBJ SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) Breakdown voltage VBR@IT (V) Part number Marking code (Note 1) SMBJ28 SMBJ28A SMBJ30 SMBJ30A SMBJ33 SMBJ33A SMBJ36 SMBJ36A SMBJ40 SMBJ40A SMBJ43 SMBJ43A SMBJ45 SMBJ45A SMBJ48 SMBJ48A SMBJ51 SMBJ51A SMBJ54 SMBJ54A SMBJ58 SMBJ58A SMBJ60 SMBJ60A SMBJ64 SMBJ64A SMBJ70 SMBJ70A SMBJ75 SMBJ75A SMBJ78 SMBJ78A SMBJ85 SMBJ85A SMBJ90 SMBJ90A SMBJ100 SMBJ100A SMBJ110 SMBJ110A SMBJ120 SMBJ120A SMBJ130 SMBJ130A SMBJ150 SMBJ150A SMBJ160 SMBJ160A SMBJ170 MF MG MH MK ML MM MN MP MQ MR MS MT MU MV MW MX MY MZ ND NE NF NG NH NK NL NM NN NP NQ NR NS NT NU NV NW NX NY NZ PD PE PF PG PH PK PL PM PN PP PQ Min. 31.1 31.1 33.3 33.3 36.7 36.7 40.0 40.0 44.4 44.4 47.8 47.8 50.0 50.0 53.3 53.3 56.7 56.7 60.0 60.0 64.4 64.4 66.7 66.7 71.1 71.1 77.8 77.8 83.3 83.3 86.7 86.7 94.4 94.4 100 100 111 111 122 122 133 133 144 144 167 167 178 178 189 Max. 38.0 34.4 40.7 36.8 44.9 40.6 48.9 44.2 54.3 49.1 58.4 52.8 61.1 55.3 65.1 58.9 69.3 62.7 73.3 66.3 78.7 71.2 81.5 73.7 86.9 78.6 95.1 86 102 92.1 106 95.8 115 104 122 111 136 123 149 135 163 147 176 159 204 185 218 197 231 Test current IT (mA) Working stand-off voltage VWM (V) Maximum blocking leakage current ID@VWM (A) 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 28 28 30 30 33 33 36 36 40 40 43 43 45 45 48 48 51 51 54 54 58 58 60 60 64 64 70 70 75 75 78 78 85 85 90 90 100 100 110 110 120 120 130 130 150 150 160 160 170 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 1 3 Maximum peak Maximum impulse clamping current voltage IPP VC@IPP (A) (V) (Note 2) 12.6 13.8 11.7 13.0 10.6 11.8 9.8 10.8 8.8 9.7 8.2 9.0 7.8 8.6 7.3 8.1 6.9 7.6 6.5 7.2 6.1 6.7 5.8 6.5 5.5 6.1 5.0 5.5 4.7 5.2 4.5 5.0 4.1 4.6 3.9 4.3 3.5 3.8 3.2 3.5 2.9 3.2 2.7 3.0 2.3 2.5 2.2 2.4 2.0 50.0 45.4 53.5 48.4 59.0 53.3 64.3 58.1 71.4 64.5 76.7 69.4 80.3 72.7 85.5 77.4 91.1 82.4 96.3 87.1 103 93.6 107 96.8 114 103 125 113 134 121 139 126 151 137 160 146 179 162 196 177 214 193 231 209 266 243 287 259 304 Version: P1812 SMBJ SERIES Taiwan Semiconductor ELECTRICAL SPECIFICATIONS (TA = 25C unless otherwise noted) Breakdown voltage VBR@IT (V) Part number Marking code (Note 1) Min. 189 Test current IT (mA) Max. 209 Working stand-off voltage VWM (V) Maximum blocking leakage current ID@VWM (A) SMBJ170A PR 1 170 1 Notes: 1. VBR measure after IT applied for 30ms, IT=square wave pulse or equivalent. 2. Surge current waveform per Figure. 3 and derate per Figure. 2. 3. All terms and symbols are consistent with ANSI/IEEE C62.35. 4. For bidirectional use C or CA suffix for types SMBJ5.0 - SMBJ170 5. For bipolar types having VWM of 10 V (SMBJ8.0C) and under, the ID limit is doubled. Maximum peak Maximum impulse clamping current voltage IPP VC@IPP (A) (V) (Note 2) 2.2 275 ORDERING INFORMATION ORDERING CODE (Note 1,2,3) PACKAGE PACKING SMBJxxxxHR5G SMB 850 / 7" Plastic reel SMBJxxxxHR4G SMB 3,000 / 13" Paper reel SMBJxxxxHM4G SMB 3,000 / 13" Plastic reel SMBJxxxx R5G SMB 850 / 7" Plastic reel SMBJxxxx R4G SMB 3,000 / 13" Paper reel SMBJxxxx M4G SMB 3,000 / 13" Plastic reel SMBJxxxxHR5 SMB 850 / 7" Plastic reel SMBJxxxxHR4 SMB 3,000 / 13" Paper reel SMBJxxxxHM4 SMB 3,000 / 13" Plastic reel SMBJxxxx R5 SMB 850 / 7" Plastic reel SMBJxxxx R4 SMB 3,000 / 13" Paper reel SMBJxxxx M4 SMB 3,000 / 13" Plastic reel 4 Note 1: "xxxx" defines voltage from 5.0V (SMBJ5.0) to 170V (SMBJ170A) Note 2: "H" means AEC-Q101 qualified Note 3: "G" means green compound (halogen free) Version: P1812 SMBJ SERIES Taiwan Semiconductor CHARACTERISTICS CURVES (TA = 25C unless otherwise noted) Fig1. Peak Pulse Power rating Curve Fig2. Pulse Derating Curve 125 PEAK PULSE POWER(PPP) OR CURRENT (IPP) A DERATING IN PERCENTAGE (%) PPPM, PEAK PULSE POWER, KW 100 NON-REPETITIVE PULSE WAVEFORM SHOWN in FIG.3 10 1 100 75 50 25 0.1 0 0.1 1 10 100 1000 10000 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE tp, PULSE WIDTH, (s) Fig3. Clamping Power Pulse Waveform 175 200 (C) Fig4. Maximum Non-Repetitive Forward Surge Current 100 IPPM, PEAK PULSE CURRENT (%) 120 IFSM, PEAK FORWARD SURGE A CURRENT (A) Pulse width(td) is defined as the point where the peak current decays to 50% of IPPM 140 Rise time tr=10s to 100% 100 Peak value IPPM 80 Half value-IPPM/2 60 40 10/1000s, waveform 20 td 0 0 0.5 1 1.5 2 2.5 8.3ms Single Half Sine Wave UNIDIRECTIONAL ONLY 10 1 3 10 100 NUMBER OF CYCLES AT 60 Hz t, TIME (ms) 5 Version: P1812 SMBJ SERIES Taiwan Semiconductor Fig5. Typical Junction Capacitance CJ, JUNCTION CAPACITANCE (pF) A 100000 10000 VR=0 1000 100 f=1.0MHz Vsig=50mVp-p VR-RATED STAND-OFF VOLTAGE 10 1 10 100 V(BR), BREAKDOWN VOLTAGE (V) 6 Version: P1812 SMBJ SERIES Taiwan Semiconductor PACKAGE OUTLINE DIMENSIONS DO-214AA (SMB) DIM. Unit (mm) Unit (inch) Min Max Min Max A 1.95 2.20 0.077 0.087 B 4.05 4.60 0.159 0.181 C 3.30 3.95 0.130 0.156 D 1.95 2.65 0.077 0.104 E 0.75 1.60 0.030 0.063 F 5.10 5.60 0.201 0.220 G 0.05 0.20 0.002 0.008 H 0.15 0.31 0.006 0.012 SUGGESTED PAD LAYOUT Symbol Unit (mm) Unit (inch) A 2.3 0.091 B 2.5 0.098 C 4.3 0.169 D 1.8 0.071 E 6.8 0.268 MARKING DIAGRAM P/N G YW F = Marking Code = Green Compound = Date Code = Factory Code Note: Cathode band for uni-directional products only 7 Version: P1812 SMBJ SERIES Taiwan Semiconductor Notice Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, to any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify TSC for any damages resulting from such improper use or sale. 8 Version: P1812