STAC780-4F
1
1
2
3
3
Pin connection
Pin Connection
1 Drain
2 Source (bottom side)
3 Gate
Features
Order code Frequency VDD POUT Gain Efficiency
STAC4932F1MR 123 MHz 50 V 450 W 24 dB 60 %
Improved ruggedness V(BR)DSS > 200 V
Load mismatch 65:1 all phases @ 350 W - 50 V - 123 MHz
POUT = 450 W typ. with 24 dB gain at 123 MHz
In compliance with the 2002/95/EC European directive
Moisture resistant package specifically designed to operate in extreme
environments
Drying recommendation before soldering:
48 hrs at 125 °C
Back finishing:
Sn96.5/Ag3/Cu0.5 solder
Base flatness < 0.2 mm
Gold content < 0.1%
Minimum solder thickness > 2 μm
Description
The STAC4932F1MR is an N-channel MOS fieldeffect RF power transistor. It is
intended for use in 50 V / 80 V ISM applications up to 250 MHz.
The STAC4932F1MR benefits from the latest generation of environmentally designed
packaging, ruggedized against cyclic high moisture operation and severe storage
conditions.
This device contains Beryllium oxide (BeO), which is hazardous if inhaled or
ingested.
Product status link
STAC4932F1MR
Product summary
Order code STAC4932F1MR
Marking STAC4932F1MR
Package STAC780-4F
Packing Box
Base / Bulk qty 20 / 80
350 W 50 V HF/VHF DMOS in STAC moisture-resistant flangeless package
STAC4932F1MR
Datasheet
DS9904 - Rev 2 - April 2020
For further information contact your local STMicroelectronics sales office.
www.st.com
1Electrical data
1.1 Maximum ratings
Table 1. Absolute maximum ratings (TCASE = 25 °C)
Symbol Parameter Value Unit
V(BR)DSS Drain source voltage 200 V
VDGR Drain-gate voltage (RGS = 1 MΩ) 200 V
VGS Gate-source voltage ±20 V
TJMaximum operating junction temperature 200 °C
TSTG Storage temperature range -65 to +150 °C
1.2 Thermal data
Table 2. Thermal data
Symbol Parameter Value Unit
RthJC Junction-case thermal resistance 0.28 °C/W
1.3 ESD protection characteristics
Table 3. ESD protection
Symbol Test Methodology Class
HBM Human Body Model (per JESD22-A114) 1C
STAC4932F1MR
Electrical data
DS9904 - Rev 2 page 2/16
2Electrical characteristics
TCASE = +25 °C (unless otherwise specified)
2.1 Static
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain - source Breakdown
voltage VGS = 0 V, IDS = 100 mA 200 240 V
IDSS Zero gate voltage drain
leakage current VGS = 0 V, VDS = 100 V 1 mA
IGSS Gate - source leakage current VGS = 20 V, VDS = 0 V 250 nA
VTH Gate - source threshold
voltage VDS = 10 V, ID = 250 mA 2.0 4.0 V
VDS(ON) Drain - source on voltage VGS = 10 V, ID = 10 A 3.6 V
GFS Forward transconductance VDS = 7 V, ID = 2.5 A 3.0 S
CISS Input capacitance
VGS = 0 V, VDS = 50 V,
f = 1 MHz
580 pF
COSS Ouput capacitance 180 pF
CRSS Reverse transfer capacitance 10 pF
Δ VTH Gate - source threshold
voltage variation ID = 250 mA 0.2 V
Δ GFS Forward transconductance
variation VDS = 7 V, ID = 2.5 A 0.6 S
2.2 Dynamic
Table 5. Dynamic (1)
Symbol Parameter Test conditions Min. Typ. Max. Unit
POUT Output power 350 450 - W
ŋDDrain efficiency POUT =350 W 60 - %
Gps Power gain POUT = 350 W 24 - dB
1. VDD = 50 V, IDQ = 2 x 250 mA, f = 123 MHz
STAC4932F1MR
Electrical characteristics
DS9904 - Rev 2 page 3/16
Table 6. GFS sorts
Marking Minimum Maximum
A 3.0 3.6
B 3.6 4.2
C 4.2 4.8
D 4.8 5.4
E 5.4 6.0
F 6.0 6.6
G 6.6 7.2
H 7.2 7.8
I 7.8 8.4
J 8.4 9.0
STAC4932F1MR
Dynamic
DS9904 - Rev 2 page 4/16
3SOA and Thermal data
Figure 1. Safe operating area
AM01107v1
0
1
10
100
1 10 100 1000
Max Drain Current - Id (A)
Drain supply voltage - Vdd (V)
1ms
10ms
DC
Operation limited by Rds(on)
Tcase = +25 °C / Tj = +200°C
Single Pulse
Figure 2. Transient thermal impedance
Single - Repetitive pulse
0.00
0.05
0.10
0.15
0.20
0.25
0.30
1.E-04 1.E-03 1.E-02 1.E-01 1.E+00
Rectangular power pulse width (s)
Thermal Impedance Zth j-c (°C/W)
single pulse
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
AM06094v1
STAC4932F1MR
SOA and thermal data
DS9904 - Rev 2 page 5/16
Figure 3. Transient thermal model
C
C5
C=0.2960046 F
C
C6
C=0.0444624 F
C
C7
C=0.0032727 F
C
C8
C=0.0042078 F
R
R5
R=.0803704 Ohm
R
R6
R=.1425926 Ohm
R
R7
R=0.0142593 Ohm
R
R8
R=.0427778 Ohm
AM06106v1
STAC4932F1MR
SOA and thermal data
DS9904 - Rev 2 page 6/16
4Product and environmental safety for toxic materials use
This product contains beryllium oxide. The product is entirely safe provided that the BeO base is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the
location of the user. It must never thrown out with general or domestic waste.
STAC4932F1MR
Product and environmental safety for toxic materials use
DS9904 - Rev 2 page 7/16
5Recommended heat profile and reflow soldering
Figure 4. Reflow profile chart
Time
Temperature
Critical Zone
Ramp-down
t 25°C to Peak
TL
TL to Tp
tp
Ramp-up
Tsmax
Tsmin
Tp
TL
25
ts
Preheat
IPC-020c-5-1
Note: tp = 20-40 s, ramp-up = 3 °C/s max., tL = 60-150 s, ramp-down = 6 °C/s max., TL = 217 °C, TS max. = 200 °C,
TS min. = 150 °C, ts = 60 - 180 s, from Tj = 25 °C to peak = 8 minutes max., tp = see Table 7.
Table 7. Pb-free process - package classification reflow temperatures (1)
Package thickness Volume mm3 < 350 Volume mm3 350-2000 Volume mm3 > 2000
< 1.6 mm
260 + 0 °C
260 + 0 °C 260 + 0 °C
1.6 mm - 2.5 mm 250 + 0 °C
245 + 0 °C
≥ 2.5 mm 250 + 0 °C 240 + 0 °C
1. Tolerance: the device manufacturer/supplier shall assure process compatibility up to and including the stated classification
temperature (this means peak reflow temperature + 0 °C. For example 260 °C + 0 °C) at the rated MSL level.
Note: The profiling tolerance is + 0 °C, -X °C (based on machine variation capability) whatever is required to control
the profile process but at no time will it exceed - 5 °C. The producer assures process compatibility at the peak
reflow profile temperatures.
Note: Package volume excludes external terminals (balls, bumps, lands, leads) and/or nonintegral heat sinks.
Note: The maximum component temperature reached during reflow depends on package thickness and volume. The
use of convection reflow processes reduces the thermal gradients between packages. However, thermal
gradients due to differences in thermal mass of SMD packages may still exist.
STAC4932F1MR
Recommended heat profile and reflow soldering
DS9904 - Rev 2 page 8/16
5.1 Evaluation flow
Figure 5. Evaluation flow
SMD1309131539
Electrical
test
Visual +
S.A.M. inspection
Bake
125 °C + 5-0 °C 24 h
Final external
visual
Reflow
(see below)
Moisture soak
lev. 3 30 °C/60% 192h
Final electr.
test
Final S.A.M.
inspection
Note: The STAC4932F1MR can withstand 3 times reflow.
5.2 Manual leads soldering
10 sec max at temperature lower than 260 °C
3 sec max at temperature lower than 350 °C
Use of ESD protected soldering iron (80 W)
STAC4932F1MR
Evaluation flow
DS9904 - Rev 2 page 9/16
5.3 Acceptable missing soldering
Figure 6. STAC tinning limit
Figure 7. Examples of acceptable missing solder
STAC4932F1MR
Acceptable missing solder
DS9904 - Rev 2 page 10/16
6Package information
In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages,
depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product
status are available at: www.st.com. ECOPACK is an ST trademark.
6.1 STAC780-4F package information
Figure 8. STAC780-4F package outline
DM00481940-1
STAC4932F1MR
Package information
DS9904 - Rev 2 page 11/16
Table 8. STAC780-4F mechanical data
Ref.
Milimeters
Min. Typ. Max.
A 3.76 3.86
A1 5.03 5.13
B 4.57 5.08
C 9.65 9.91
D 20.17 20.37
E 20.45 20.70
F 0.11 0.17
G 0.97 1.14
H 1.52 1.70
I 3.18 4.32
J 9.52 9.78
q 1.37
r 1.52
s 0.51
CH1 2.03
STAC4932F1MR
STAC780-4F package information
DS9904 - Rev 2 page 12/16
6.2 Marking information
LEGEND
Marking Composition Field
(MAX CHAR ALLOWED = 1)
A - MARKING AREA
B - ADDITIONAL INFORMATION
C - STANDARD ST LOGO
(PP)
D - Assy Plant
(nnn)
E - FE Sequence
Plant
(WX)
F - Diffusion Traceability
(MAX CHAR ALLOWED = 3)
G - COUNTRY OF ORIGIN
(TF)
H - Test and Finishing Plant
(Y)
I - Assy Year
(WW)
J - Assy Week
A B
C
D E F
G H I
PACKAGE FACE :
TOP
J
6.3 Packing and shipping specifications
Table 9. Packing and shipping data
Order codes Packaging Pcs per tray Dry pack
humidity
GFS and lot code
STAC4932F1MR Box (plastic tray) 20 < 10% Two codes max.
Note: Dry pack specification in accordance with JEDEC J-STD-033.
STAC4932F1MR
Marking information
DS9904 - Rev 2 page 13/16
Revision history
Table 10. Document revision history
Date Version Changes
24-Oct-2013 1 First release.
17-Apr-2020 2 Updated package information. Added Section 1.3 ESD protection characteristics.
STAC4932F1MR
DS9904 - Rev 2 page 14/16
Contents
1Electrical data .....................................................................2
1.1 Maximum ratings ...............................................................2
1.2 Thermal data ..................................................................2
1.3 ESD protection characteristics....................................................2
2Electrical characteristics...........................................................3
2.1 Static ........................................................................3
2.2 Dynamic ......................................................................3
3SOA and Thermal data .............................................................5
4Product and environmental safety for toxic materials use ..........................7
5Recommended heat profile and reflow soldering ...................................8
5.1 Evaluation flow ................................................................9
5.2 Manual leads soldering..........................................................9
5.3 Acceptable missing soldering ...................................................10
6Package information..............................................................11
6.1 STAC780-4F package information ...............................................11
6.2 Marking information ...........................................................13
6.3 Packing and shipping specifications ..............................................13
Revision history .......................................................................14
Contents ..............................................................................15
STAC4932F1MR
Contents
DS9904 - Rev 2 page 15/16
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© 2020 STMicroelectronics – All rights reserved
STAC4932F1MR
DS9904 - Rev 2 page 16/16