2Electrical characteristics
TCASE = +25 °C (unless otherwise specified)
2.1 Static
Table 4. Static
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS Drain - source Breakdown
voltage VGS = 0 V, IDS = 100 mA 200 240 V
IDSS Zero gate voltage drain
leakage current VGS = 0 V, VDS = 100 V 1 mA
IGSS Gate - source leakage current VGS = 20 V, VDS = 0 V 250 nA
VTH Gate - source threshold
voltage VDS = 10 V, ID = 250 mA 2.0 4.0 V
VDS(ON) Drain - source on voltage VGS = 10 V, ID = 10 A 3.6 V
GFS Forward transconductance VDS = 7 V, ID = 2.5 A 3.0 S
CISS Input capacitance
VGS = 0 V, VDS = 50 V,
f = 1 MHz
580 pF
COSS Ouput capacitance 180 pF
CRSS Reverse transfer capacitance 10 pF
Δ VTH Gate - source threshold
voltage variation ID = 250 mA 0.2 V
Δ GFS Forward transconductance
variation VDS = 7 V, ID = 2.5 A 0.6 S
2.2 Dynamic
Table 5. Dynamic (1)
Symbol Parameter Test conditions Min. Typ. Max. Unit
POUT Output power 350 450 - W
ŋDDrain efficiency POUT =350 W 60 - %
Gps Power gain POUT = 350 W 24 - dB
1. VDD = 50 V, IDQ = 2 x 250 mA, f = 123 MHz
STAC4932F1MR
Electrical characteristics
DS9904 - Rev 2 page 3/16