PHOTOCOUPLER
PS2732-1,PS2733-1
HIGH COLLECTOR TO EMITTER VOLTAGE
SOP MULTI PHOTOCOUPLER −NEPOC Series−
DESCRIPTION
The PS2732-1 and PS2733-1 are optically coupled isolators containing a GaAs light emitting diode and an NPN
silicon darlington-connected phototransistor.
This package is SOP (Small Outline Package) type and has shield effect to cut off ambient light.
It is designed for high density mounting applications.
FEATURES
• High isolation voltage (BV = 2 500 Vr.m.s.)
• High collector to emitter voltage (VCEO = 300 V: PS2732-1)
(VCEO = 350 V: PS2733-1)
• SOP (Small Outline Package) type
• High current transfer ratio (CTR = 4 000 % TYP.)
• Ordering number of taping product : PS2732-1-F3, F4, PS2733-1-F3, F4
• UL approved: File No. E72422 (S)
• VDE0884 approved (Option)
APPLICATIONS
• Hybrid IC
• Telephone/Telegraph Receiver
• FAX
ORDERING INFORMATION (Solder Contains Lead)
Part Number Package Safety Standard Approval
Standard products PS2732-1, PS2733-1 4-pin SOP
• UL approved
PS2732-1-V, PS2733-1-V 4-pin SOP VDE0884 approved products (Option)
ORDERING INFORMATION (Pb-Free)
Part Number Package Safety Standard Approval
Standard products PS2732-1-A, PS2733-1-A 4-pin SOP
• UL approved
PS2732-1-V-A, PS2733-1-V-A 4-pin SOP VDE0884 approved products (Option)
Document No. PN10248EJ01V0DS (1st edition)
(Previous No. P11312EJ3V0DS00)
Date Published February 2003 CP(K)
The mark shows major revised points.
PS2732-1,PS2733-1
PACKAGE DIMENSIONS (in millimeters)
4.0±0.5
7.0±0.3
4.4
0.5±0.3
0.15+0.10
–0.05
TOP VIEW
1. Anode
2. Cathode
3. Emitter
4. Collector
43
12
2.0
0.1±0.1
2.1±0.2
2.54
0.4+0.10
–0.05 0.25 M
PS2732-1
PS2733-1
Data Sheet PN10248EJ01V0DS
2
PS2732-1,PS2733-1
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise specified)
Parameter Symbol Ratings Unit
PS2732-1 PS2733-1
Diode Forward Current (DC) IF 50 mA
Reverse Voltage VR 6 V
Power Dissipation Derating
∆
PD/°C 0.8 mW/°C
Power Dissipation PD 80 mW
Peak Forward Current*1 IFP 1 A
Transistor Collector to Emitter Voltage VCEO 300 350 V
Emitter to Collector Voltage VECO 0.3 V
Collector Current IC 150 mA
Power Dissipation Derating
∆
PC/°C 1.5 mW/°C
Power Dissipation PC 150 mW
Isolation Voltage*2 BV 2 500 Vr.m.s.
Operating Ambient Temperature TA –55 to +100 °C
Storage Temperature Tstg –55 to +150 °C
*1 PW = 100
µ
s, Duty Cycle = 1 %
*2 AC voltage for 1 minute at TA = 25 °C, RH = 60 % between input and output
Data Sheet PN10248EJ01V0DS 3
PS2732-1,PS2733-1
ELECTRICAL CHARACTERISTICS (TA = 25 °C)
Parameter Symbol Conditions MIN. TYP. MAX. Unit
Diode Forward Voltage VF IF = 10 mA 1.15 1.4 V
Reverse Current IR VR = 5 V 5
µ
A
Terminal Capacitance Ct V = 0 V, f = 1 MHz 30 pF
Transistor Collector to Emitter Dark
Current ICEO IF = 0 mA, VCE = 300 V 400 nA
Coupled Current Transfer Ratio
(IC/IF) CTR IF = 1 mA, VCE = 2 V 1 500 4 000 %
Collector Saturation
Voltage VCE (sat) IF = 1 mA, IC = 2 mA 1.0 V
Isolation Resistance RI-O VI-O = 1 kVDC 1011
Ω
Isolation Capacitance CI-O V = 0 V, f = 1 MHz 0.4 pF
Rise Time
*1 tr VCC = 5 V, IC = 10 mA, RL = 100 Ω 100
µ
s
Fall Time
*1 tf 100
*1 Test circuit for switching time
VCC
VOUT
RL = 100 Ω
IF
50 Ω
Pulse Input
PW = 1 ms
Duty cycle = 1/10
Data Sheet PN10248EJ01V0DS
4
PS2732-1,PS2733-1
TYPICAL CHARACTERISTICS (TA = 25 °C, unless otherwise specified)
100
50
25
0
75
25 50 75 100
Ambient Temperature T
A
(˚C)
Diode Power Dissipation P
D
(mW)
DIODE POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Ambient Temperature T
A
(˚C)
Transistor Power Dissipation P
C
(mW)
TRANSISTOR POWER DISSIPATION vs.
AMBIENT TEMPERATURE
Collector to Emitter Voltage V
CE
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
100
0.1
1
0.01
10
0.6 1.0 1.4 1.60.8 1.2
Forward Voltage V
F
(V)
Forward Current I
F
(mA)
FORWARD CURRENT vs.
FORWARD VOLTAGE
+25 ˚C
0 ˚C
–25 ˚C
–55 ˚C
T
A
= +100 ˚C
+75 ˚C
+50 ˚C
Ambient Temperature T
A
(˚C)
COLLECTOR TO EMITTER DARK
CURRENT vs. AMBIENT TEMPERATURE
Collector to Emitter Dark Current I
CEO
(nA)
Collector Saturation Voltage V
CE (sat)
(V)
Collector Current I
C
(mA)
COLLECTOR CURRENT vs.
COLLECTOR SATURATION VOLTAGE
200
150
100
50
025 50 75 100
0.1
–50
V
CE
= 300 V
1
10
100
1 000
–25 025 50 75 100
10 000
1.5 mW/˚C
0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2
1 000
100
10
1
0.1
012
345
160
140
120
100
80
60
40
20
1 mA
I
F
= 5 mA
2 mA
1 mA
0.5 mA
I
F
= 0.5 mA
1.5 mA
2 mA
2.5 mA
3.5 mA
3 mA
5 mA
4 mA
4.5 mA
Data Sheet PN10248EJ01V0DS 5
PS2732-1,PS2733-1
25
1.2
1.0
0.8
0.6
0.4
0.2
–50 0–25 50 75 100
5 000
0
V
CE
= 2 V
0.1
300
20
V
CC
= 10 V,
I
C
= 10 mA
Normalized to 1.0
at T
A
= 25 ˚C,
I
F
= 1 mA, V
CE
= 2 V
0.01
V
CE
= 4 V,
I
C
= 10 mA,
V
in
= 0.1 V
p-p
–25
–15
–10
–5
0
4 000
3 000
2 000
1 000
Sample B
Sample A
0.5 1 5 10 20
100
50
10
1
5
50 100 500 1 k 2 k
t
r
t
d
t
f
t
s
–30
–20
0.1 1 10 100
V
in
F
µ
147
Ω
1 kΩ
V
out
100 Ω
1 kΩ
0
R
L
1.2
1.0
0.8
0.6
0.4
0.2
0
10 10
2
10
3
10
4
10
5
10
6
I
F
= 1 mA
T
A
= 25 ˚C
T
A
= 60 ˚C
Forward Current I
F
(mA)
Ambient Temperature T
A
(˚C)
Load Resistance R
L
(Ω)Frequency f (kHz)
Normalized Current Transfer Ratio CTR
Current Transfer Ratio CTR (%)
Normalized Gain G
V
Switching Time t ( s)
µ
NORMALIZED CURRENT TRANSFER
RATIO vs. AMBIENT TEMPERATURE CURRENT TRANSFER RATIO vs.
FORWARD CURRENT
SWITCHING TIME vs.
LOAD RESISTANCE FREQUENCY RESPONSE
LONG TERM CTR DEGRADATION
Time (Hr)
CTR (Relative Value)
R
L
= 10 Ω
Remark The measurement of TYPICAL CHARACTERISTICS are only for reference, not guaranteed.
Data Sheet PN10248EJ01V0DS
6
PS2732-1,PS2733-1
TAPING SPECIFICATIONS (in millimeters)
Tape Direction
Outline and Dimensions (Reel)
Packing: 3 500 pcs/reel
2.0±0.5
R 1.0
13.0±0.2
φ
21.0±0.8
φ
330±2.0
φ
100±1.0
φ
2.0±0.5
11.9 to 15.4
Outer edge of
flange
17.5±1.0
13.5±1.0
13.0±0.2
φ
PS2732-1-F3
PS2733-1-F3
PS2732-1-F4
PS2733-1-F4
1.55±0.1
2.0±0.05
4.0±0.1
1.75±0.1
4.6±0.1
2.9 MAX.
0.3
8.0±0.1
Outline and Dimensions (Tape)
2.4±0.1
1.5
+0.1
–0
7.4±0.1
5.5±0.05
12.0±0.2
Data Sheet PN10248EJ01V0DS 7
PS2732-1,PS2733-1
NOTES ON HANDLING
1. Recommended soldering conditions
(1) Infrared reflow soldering
• Peak reflow temperature 260°C or below (package surface temperature)
• Time of peak reflow temperature 10 seconds or less
• Time of temperature higher than 220°C 60 seconds or less
• Time to preheat temperature from 120 to 180°C 120±30 s
• Number of reflows Three
• Flux Rosin flux containing small amount of chlorine (The flux with a
maximum chlorine content of 0.2 Wt% is recommended.)
120±30 s
(preheating)
220˚C
180˚C
Package Surface Temperature T (˚C)
Time (s)
Recommended Temperature Profile of Infrared Reflow
(heating)
to 10 s
to 60 s
260˚C MAX.
120˚C
(2) Wave soldering
• Temperature 260°C or below (molten solder temperature)
• Time 10 seconds or less
• Preheating conditions 120°C or below (package surface temperature)
• Number of times One (Allowed to be dipped in solder including plastic mold portion.)
• Flux Rosin flux containing small amount of chlorine (The flux with a maximum chlorine
content of 0.2 Wt% is recommended.)
(3) Cautions
• Fluxes
Avoid removing the residual flux with freon-based and chlorine-based cleaning solvent.
2. Cautions regarding noise
Be aware that when voltage is applied suddenly between the photocoupler’s input and output or between
collector-emitters at startup, the output side may enter the on state, even if the voltage is within the absolute
maximum ratings.
Data Sheet PN10248EJ01V0DS
8
PS2732-1,PS2733-1
USAGE CAUTIONS
1. Protect against static electricity when handling.
2. Avoid storage at a high temperature and high humidity.
Data Sheet PN10248EJ01V0DS 9
PS2732-1,PS2733-1
SPECIFICATION OF VDE MARKS LICENSE DOCUMENT (VDE0884)
Parameter Symbol Speck Unit
Application classification (DIN VDE 0109)
for rated line voltages ≤ 150 Vr.m.s. IV
for rated line voltages ≤ 300 Vr.m.s. III
Climatic test class (DIN IEC 68 Teil 1/09.80) 55/100/21
Dielectric strength
Maximum operating isolation voltage UIORM 710 Vpeak
Test voltage (partial discharge test, procedure a for type test and random test) Upr 850 Vpeak
Upr = 1.2 × UIORM, Pd < 5 pC
Test voltage (partial discharge test, procedure b for all devices test)
Upr = 1.6 × UIORM, Pd < 5 pC Upr 1 140 Vpeak
Highest permissible overvoltage UTR 4 000 Vpeak
Degree of pollution (DIN VDE 0109) 2
Clearance distance > 5 mm
Creepage distance > 5 mm
Comparative tracking index (DIN IEC 112/VDE 0303 part 1) CTI 175
Material group (DIN VDE 0109) III a
Storage temperature range Tstg –55 to +150 °C
Operating temperature range TA –55 to +100 °C
Isolation resistance, minimum value
VIO = 500 V dc at TA = 25 °C Ris MIN. 1012 Ω
VIO = 500 V dc at TA MAX. at least 100 °C Ris MIN. 1011 Ω
Safety maximum ratings
(maximum permissible in case of fault, see thermal derating curve)
Package temperature Tsi 150 °C
Current (input current IF, Psi = 0) Isi 300 mA
Power (output or total power dissipation) Psi 500 mW
Isolation resistance
VIO = 500 V dc at TA = 175 °C (Tsi) Ris MIN. 109Ω
Data Sheet PN10248EJ01V0DS
10
4590 Patrick Henry Drive
Santa Clara, CA 95054-1817
Telephone: (408) 919-2500
Facsimile:
(
408
)
988-0279
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with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous
Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive
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that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are
exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals.
All devices with these suffixes meet the requirements of the RoHS directive.
This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that
go into its products as of the date of disclosure of this information.
Restricted Substance
per RoHS Concentration Limit per RoHS
(values are not yet fixed) Concentration contai ned
in CEL devices
-A -AZ
Lead (Pb) < 1000 PPM Not Detected (*)
Mercury < 1000 PPM Not Detected
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PBDE < 1000 PPM Not Detected
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