2SC5356 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC5356 High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications Unit: mm * Excellent switching times: tf = 0.5 s (max) (IC = 1.2 A) * High collectors breakdown voltage: VCEO = 800 V * High DC current gain: hFE = 15 (min) (IC = 0.15 A) Maximum Ratings (Ta = 25C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 900 V Collector-emitter voltage VCEO 800 V Emitter-base voltage VEBO 7 V DC IC 3 Pulse ICP 5 IB 1 Collector current Base current Collector power dissipation Ta = 25C Tc = 25C Junction temperature Storage temperature range PC 1.5 25 A JEDEC JEITA A TOSHIBA W Weight: 0.36 g (typ.) Tj 150 C Tstg -55 to 150 C 2-7B5A JEDEC JEITA TOSHIBA 2-7B6A Weight: 0.36 g (typ.) 1 2002-08-13 2SC5356 Electrical Characteristics (Ta = 25C) Characteristics Symbol Test Condition Min Typ. Max Unit Collector cut-off current ICBO VCB = 720 V, IE = 0 100 A Emitter cut-off current IEBO VEB = 7 V, IC = 0 10 A Collector-base breakdown voltage V (BR) CBO IC = 1 mA, IE = 0 900 V Collector-emitter breakdown voltage V (BR) CEO V IC = 10 mA, IB = 0 800 hFE (1) VCE = 5 V, IC = 1 mA 10 hFE (2) VCE = 5 V, IC = 0.15 A 15 Collector-emitter saturation voltage VCE (sat) IC = 1.2 A, IB = 0.24 A 1.0 V Base-emitter saturation voltage VBE (sat) IC = 1.2 A, IB = 0.24 A 1.3 V 0.7 4.0 0.5 20 s tr VCC 360 V IB1 Rise time IB2 Switching time Storage time Fall time tstg tf IC IB1 INPUT I B2 IB1 = 0.24 A, IB2 = -0.48 A 300 DC current gain OUTPUT s DUTY CYCLE 1% Marking C5356 Product No. Lot No. Explanation of Lot No. Month of manufacture: January to December are denoted by letters A to L respectively. Year of manufacture: last decimal digit of the year of manufacture 2 2002-08-13 2SC5356 IC - VCE IC - VBE 3 Common emitter Common emitter 1.0 Tc = 25C 3 (A) (A) IC 2 0.5 0.4 Collector current 0.6 IC Collector current VCE = 5 V 0.8 0.3 0.2 1 0.1 2 1 Tc = 100C 25 0.05 -55 IB = 0.02 A 0 0 2 4 6 8 Collector-emitter voltage VCE 0 0 10 0.2 0.4 hFE - IC Collector-emitter saturation voltage VCE (sat) (V) hFE 1.2 1.4 (V) VCE (sat) - IC VCE = 5 V DC current gain 1.0 10 Common emitter 100 Tc = 100C 25 10 1 0.001 -55 0.01 0.1 Collector current 1 IC Common emitter IC/IB = 5 1 Tc = 100C 25 0.1 -55 0.05 0.01 10 0.1 (A) Collector current VBE (sat) - IC 10 Common emitter Switching time (s) IC/IB = 5 -55 25 1 Tc = 100C 0.1 Collector current 1 IC 1 IC 10 (A) Switching Characteristics 10 Base-emitter saturation voltage VBE (sat) (V) 0.8 Base-emitter voltage VBE (V) 1000 0.1 0.01 0.6 1 IC = 5IB1 2IB1 = -IB2 Pulse width = 20 s Duty cycle 1% Tc = 25C tf tr 0.1 0.01 10 (A) tstg 0.1 Collector current 3 1 IC 10 (A) 2002-08-13 2SC5356 Safe Operating Area 10 10 ms* IC max (pulsed)* IC max (continuous) 1 ms* 100 s* (A) 1 Collector current IC 100 ms* DC operation Tc = 25C 0.1 0.01 *: Single nonrepetitive pulse Tc = 25C Curves must be derated linearly with increase in temperature. 0.001 1 3 5 10 VCEO max 30 50 100 Collector-emitter voltage VCE 300 500 1000 (V) 4 2002-08-13 2SC5356 RESTRICTIONS ON PRODUCT USE 000707EAA * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or others. * The information contained herein is subject to change without notice. 5 2002-08-13