For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
GENERAL DESCRIPTION
The 0912GN-650V is an internally matched, COMMON SOURCE, class
AB GaN on SiC HEMT transistor capable of providing over 17dB gain,
650 Watts of pulsed RF output power at 128μs pulse width, 10% duty
factor across the 960 to 1215 MHz band. The transistor has internal pre-
match for optimal performance. This hermetically sealed transistor can
be used for Broadband Avionics Data Link applications. It utilizes gold
metallization and eutectic attach to provide highest reliability and
superior ruggedness.
CASE OUTLINE
55-KR
Common Source
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation
Device Dissipation @ 25C 1400 W
Maximum Voltage and Current
Drain-Source Voltage (VDSS) 150 V
Gate-Source Voltage (VGS) -8 to +0 V
Maximum Temperatures
Storage Temperature (TSTG) -55 to +125 C
Operating Junction Temperature +250 C
ELECTRICAL CHARACTERISTICS @ 25C
Symbol Characteristics Test Conditions Min Typ Max Units
Pout Output Power Freq=960, 1090, 1215 MHz 650 W
Gp Power Gain Pout=650W, Freq=960, 1090, 1215 MHz 17 18 dB
d Drain Efficiency Pout=650W, Freq=960, 1090, 1215 MHz 48 53 %
Dr Droop Pout=650W, Freq=960, 1090, 1215 MHz 0.8 dB
VSWR-T Load Mismatch
Tolerance
Pout=650W, Freq= 1215MHz 3:1
Өjc Thermal Resistance Pulse Width=128uS, Duty=10% 0.155 °C/W
Bias Condition: Vdd=+50V, Idq=100mA average current (Vgs= -2.0 ~ -4.5V ) with constant
gate bias
FUNCTIONAL CHARACTERISTICS @ 25C
ID(Off) Drain leakage current VgS = -8V, VD = 150V 64 mA
IG(Off) Gate leakage current VgS = -8V, VD = 0V 22 mA
BVDSS Drain-source breakdown
voltage
Vgs =-8V, ID = 64mA 150 V
Issue June 2013
Export Classification: EAR-99
0912GN-650V
650 Watts - 50 Volts, 128 s, 10%
Broad Band Data Link 960 - 1215 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
TYPICAL BROAD BAND PERFORMACE DATA
Frequency Pin (W) Pout (W) Id (A) RL (dB) Eff (%) G (dB) Droop
(dB)
960 MHz 11.2 684 2.56 -7 53 17.9 0.3
1090 MHz 11.2 684 2.29 -7 60 17.9 0.3
1215 MHz 11.2 721 2.29 -14 63 18.1 0.4
0912GN-650V
650 Watts - 50 Volts, 128 s, 10%
Broad Band Data Link 960 - 1215 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
55-KR PACKAGE DIMENSION
Dimension Min (mil) Min (mm) Max (mil) Max (mm)
A 370 9.40 372 9.44
B 498 12.65 500 12.7
C 700 17.78 702 17.83
D 830 21.08 832 21.13
E 1030 26.16 1032 26.21
F 101 2.56 102 2.59
G 151 3.84 152 3.86
H 385 9.78 387 9.83
I 130 3.30 132 3.35
J 003 .076 004 0.10
K 135 3.43 137 3.48
L 105 2.67 107 2.72
M 085 2.16 86 2.18
N 065 1.65 66 1.68
0912GN-650V
650 Watts - 50 Volts, 128 s, 10%
Broad Band Data Link 960 - 1215 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
The information contained in the document is PROPRIETARY AND CONFIDENTIAL information of Microsemi and cannot be
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Microsemi reserves the right to change the configuration, functionality and performance of its products at anytime without any
notice. This product has been subject to limited testing and should not be used in conjunction with life-support or other mission-
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Revision History
Revision Lev el / Date Para. Affected Description
01 / June 2013 - Initial Preliminary Release
0912GN-650V
650 Watts - 50 Volts, 128 s, 10%
Broad Band Data Link 960 - 1215 MHz
For the most current data, consult MICROSEMI’s website: www.MICROSEMI.com
Specifications are subject to change, consult the RFIS factory at (408) 986-8031 for the latest information
