SGS-THOMSON MICROELECTRONICS STK4N25 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR ky TYPE STK4N25 Rpsvon) Ib <1.19 4A Vpss 250 V TYPICAL Roson) = 1 Q AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100C APPLICATION ORIENTED CHARACTERIZATION APPLICATIONS a HIGHSPEED SWITCHING UNINTERRUPTIBLE POWER SUPPLY (UPS) MOTOR CONTROL, AUDIO AMPLIFIERS INDUSTRIAL ACTUATORS DC-DC & DC-AC CONVERTERS FOR TELECOM, INDUSTRIAL AND CONSUMER ENVIRONMENT = PARTICULARLY SUITABLE FOR INTERNAL SCHEMATIC DIAGRAM ELECTRONIC FLUORESCENT LAMP D (2) BALLASTS SOT-82 SOT-194 (option) & (1) $ (3) ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit Vos Drain-source Voltage (Vas = 0) 250 Vv Voar /|Drain- gate Voltage (Res = 20 kQ) 250 Vv Ves Gate-source Voltage + 20 Vv Ip Drain Current (continuous) at Te = 25 C 4 A ID Drain Current (continuous) at Te = 100 C 2 A Ipm(*) |Drain Current (pulsed) 16 A Prot Total Dissipation at T, = 25 C 50 W Derating Factor 0.4 wc Tstg Storage Temperature -65 to 150 C Tj Max. Operating Junction Temperature 150 C () Pulse width limited by safe operating area June 1993 1/10STK4N25 THERMAL DATA Rihj-case |Thermal Resistance Junction-case Max 2.5 C/W Rthj-amb |Thermal Resistance Junction-ambient Max 80 C/W Rthj-amb |Thermal Resistance Case-sink Typ 0.7 C/W T Maximum Lead Temperature For Soldering Purpose 275 C AVALANCHE CHARACTERISTICS Symbol Parameter Max Value Unit lAR Avalanche Current, Repetitive or Not-Repetitive 4 A (pulse width limited by T; max, 6 < 1%) Eas Single Pulse Avalanche Energy 20 mJ (starting T; = 25 C, Ip = lar, Vop = 50 V) Ear Repetitive Avalanche Energy 5 mJ (pulse width limited by Tj max, 6 < 1%) lAR Avalanche Current, Repetitive or Not-Repetitive 2 A (Te = 100 C, pulse width limited by T; max, 6 < 1%) ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified) OFF Symbol Parameter Test Conditions Min. Typ. | Max. Unit Viprypss_ |Drain-source Ip= 250A Vas=0 250 V Breakdown Voltage loss Zero Gate Voltage Vos = Max Rating 250 pA Drain Current (Vas = 0) |Vps = Max Rating x 0.8 Tc= 125C 1000 HA lass Gate-body Leakage Ves=+20V + 100 nA Current (Vps = 0) ON (*) Symbol Parameter Test Conditions Min. Typ. | Max. Unit Vasith) Gate Threshold Voltage |Vps= Vas Ip= 250uUA 2 3 4 V Rps(on) |Static Drain-source On |Vas=10V ID=2A 1 1.1 Q Resistance Vas=10V Ip=2A To = 100C 2.2 2 ID(on) On State Drain Current |Vps > Ip(on) X Rps(on)max 4 A Ves=10V DYNAMIC Symbol Parameter Test Conditions Min. Typ. | Max. Unit Gis (*) Forward Vos > ID(onyX Ros(onymax ID=2A 1.3 2.2 $8 Transconductance Ciss Input Capacitance Vos=25V f=1MHz Vas=0 370 500 pF Coss Output Capacitance 60 100 pF Criss Reverse Transfer 10 20 pF Capacitance 2/10 ka 3GS-THOMSON Yl i ROMIGSSTK4N25 ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbol Parameter Test Conditions Min. Typ. | Max. Unit td(on) Turn-on Time Vop = 125 V IDp=2A 15 25 ns r Rise Time Rg = 502 Ves =10V 45 65 ns (see test circuit, figure 3) (di/dt)on |Turn-on Current Slope |Vpp = 200 V ID=4A 180 A/us Ra= 509 Ves = 10 V (see test circuit, figure 5) Qg Total Gate Charge Vpp =200 V Ip=4A Vag=10V 16 25 nc Qgs Gate-Source Charge 5 nc Qga Gate-Drain Charge 6 nc SWITCHING OFF Symbol Parameter Test Conditions Min. Typ. | Max. Unit trvorty |Off-voltage Rise Time |Vpp=200 V Ip=4A 15 25 ns tr Fall Time Re=50Q Ves=10V 15 25 ns to Cross-over Time (see test circuit, figure 5) 35 55 ns SOURCE DRAIN DIODE Symbol Parameter Test Conditions Min. Typ. | Max. Unit Isp Source-drain Current 4 A Ispm(*) |Source-drain Current 16 A (pulsed) Vsp (*) |Forward On Voltage Isp =4A Ves=0 1.5 Vv ter Reverse Recovery Isp = 4A di/dt = 100 A/us 180 ns Time Vop =100 V- Tj = 150 C Qrr Reverse Recovery (see test circuit, figure 5) 1.2 pc Charge IRRM Reverse Recovery 13 A Current (*) Pulsed: Pulse duration = 300 us, duty cycle 1.5% () Pulse width limited by safe operating area Safe Operating Areas InfA 4 & mo D.C. OPERATION Thermal Impedance Vos {V) 08 1074 10? GC34560 107" tp (s) 3/10 AYP GenouscmonesSTK4N25 Derating Curve GC2Z6250 Pio (W) 60 A aN 20 iN ~ 0 50 100 150 Tope C) Transfer Characteristics GCS5340 Ip (A) 6 3 2 4 6 & 10 Vas (VY) Static Drain-source On Resistance Ros(an) a ae) Vgg=10V 1.6 Pr LT tl 1.2 a Le a 0.8 0.4 1 2 3 4 InA) 4/10 ky SCS-THOMSON MIGROELECTROR Output Characteristics GC52530 |p(A) 19 5 4 0 5 10 15 20 25 Vys(V) Transconductance GC51530 95(5) Vs =15V 0 1 2 3 4 IpfA) Gate Charge vs Gate-source Voltage Ves (VY) 10 Vos =200V Ip =4A 0 5 10 15 20 Q,(nc)STK4N25 Capacitance Variations GC5O2340 C(pF) 600 SDC 400 DC 200 100 Coss rss a 10 20 30 40 50 Vos () Normalized On Resistance vs Temperature Rps(an) (norm) 2.0 1.6 1.2 0.8 Ves=10V [p=2A 0.4 50 0 30100 Tc) Turn-off Drain-source Voltage Slope dv/dt ec5a0s0 (/ns) Voo =700 30[-" Veg =10 Ip =4A 20 A N\ 10 N a ee 0 40 &0 120 Re(0) ky SCS-THOMSON MIGROELECTROR Normalized Gate Threshold Voltage vs Temperature GC5S3560 Ves(th} norm 1.2 1.0 0.8 0.6 O.4 50 0 50 100 Ty (C) Turn-on Current Slope di /at 6CS4040 (A/u 8) Voo =200V Vo5 =10 I D =4A 400 300 200 100 o 40 BO 12 160 Re( ft) Cross-over Time te (ns} Vpp =200 Ves =10 lp =4A 80 60 40 20 0 40 80 120 160 Rg(n) 5/10STK4N25 Switching Safe Operating Area Accidental Overload Area Ip CA) Ip (A) 20 20 16 12 T,=150C tp =20 ws 0 50 100 150 200 Vos () 0 50 100 150 200 Vos () Source-drain Diode Forward Characteristics Vsp (V) 1.1 1.0 0.9 0.8 0.7 0.6 0 262 6 B 10 len fA) Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms VieR)oss L Yo o# 2200 3,3 o_ BE pF Vo lp E a o _ | | Ne 0.U.T. |__| Py _ scosaan SCQ5970 eft &r SGS-THOMSON Y/ ticroeuzeTRonSTK4N25 Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 4: Gate Charge Test Circuit RL 2200 BF Yo Ves | eK DUT. Pa Ll 3.3 mF Yoo l | | | Scossro 12 iKQ Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times 5 1000 BF Yop li 250 scoenio &r SGS-THOMSON 7/10STK4N25 SOT-82 MECHANICAL DIM. mm inch MIN. TYP. MAX. MIN. TYP. MAX. A 7.4 78 0.291 0.307 B 10.5 11.3 0.413 0.445 b 0.7 0.9 0.028 0.035 b1 0.49 0.75 0.019 0.030 Cc 2.4 27 0.04 0.106 cl 1.2 0.047 D 15.7 0.618 e 2.2 0.087 e3 4.4 0.173 F 3.8 0.150 H 2.54 0.100 cl e3 P032A 8/10 Ly;STK4N25 SOT-194 MECHANICAL P032B 9/10 &r SGS-THOMSON