PD -97134 IRFP4468PbF HEXFET(R) Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free S VDSS RDS(on) typ. max. ID (Silicon Limited) 100V 2.0m: 2.6m: 290A c ID (Package Limited) 195A D G D S TO-247AC G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) 290c ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 200 ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 195 IDM Pulsed Drain Current d 1120 PD @TC = 25C Maximum Power Dissipation 520 W A Linear Derating Factor 3.4 VGS Gate-to-Source Voltage 20 W/C V dv/dt TJ Peak Diode Recovery f 10 V/ns Operating Junction and -55 to + 175 TSTG Storage Temperature Range C 300 Soldering Temperature, for 10 seconds (1.6mm from case) 10lbxin (1.1Nxm) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e IAR Avalanche Currentd EAR Repetitive Avalanche Energy g 740 mJ See Fig. 14, 15, 22a, 22b, A mJ Thermal Resistance Typ. Max. RJC Symbol Junction-to-Case k --- 0.29 RCS Case-to-Sink, Flat Greased Surface 0.24 --- RJA Junction-to-Ambient jk --- 40 www.irf.com Parameter Units C/W 1 5/21/08 IRFP4468PbF Static @ TJ = 25C (unless otherwise specified) Symbol Parameter V(BR)DSS V(BR)DSS/TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Internal Gate Resistance RG Min. Typ. Max. Units 100 --- --- 2.0 --- --- --- --- --- --- 0.09 2.0 --- --- --- --- --- 0.8 --- --- 2.6 4.0 20 250 100 -100 --- Conditions V VGS = 0V, ID = 250A V/C Reference to 25C, ID = 5mAd m VGS = 10V, ID = 180A g V VDS = VGS, ID = 250A A VDS = 100V, VGS = 0V VDS = 80V, VGS = 0V, TJ = 125C nA VGS = 20V VGS = -20V Dynamic @ TJ = 25C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr td(off) tf Ciss Coss Crss Coss eff. (ER) Coss eff. (TR) Parameter Min. Typ. Max. Units Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Total Gate Charge Sync. (Qg - Qgd) 310 --- --- --- 360 540 --- 81 --- --- 89 --- 270 --- Turn-On Delay Time --- 52 --- Rise Time --- 230 --- Turn-Off Delay Time --- 160 --- Fall Time --- 260 --- Input Capacitance --- 19860 --- Output Capacitance --- 1360 --- Reverse Transfer Capacitance --- 540 --- Effective Output Capacitance (Energy Related) --- 1550 --- Effective Output Capacitance (Time Related)h --- 900 --- S nC ns pF Conditions VDS = 50V, ID = 180A ID = 180A VDS =50V VGS = 10V g ID = 180A, VDS =0V, VGS = 10V VDD = 65V ID = 180A RG = 2.7 VGS = 10V g VGS = 0V VDS = 50V = 100 kHz, See Fig. 5 VGS = 0V, VDS = 0V to 80V i, See Fig. 11 VGS = 0V, VDS = 0V to 80V h Diode Characteristics Symbol Parameter IS Continuous Source Current ISM (Body Diode) Pulsed Source Current VSD trr (Body Diode)d Diode Forward Voltage Reverse Recovery Time Qrr Reverse Recovery Charge IRRM ton Reverse Recovery Current Forward Turn-On Time Min. Typ. Max. Units --- --- --- 1120 Conditions A MOSFET symbol A showing the integral reverse D G p-n junction diode. TJ = 25C, IS = 180A, VGS = 0V g TJ = 25C VR = 85V, IF = 180A TJ = 125C di/dt = 100A/s g TJ = 25C --- --- 1.3 V --- 100 ns --- 110 --- 370 nC TJ = 125C --- 420 --- 6.9 --- A TJ = 25C Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is 195A. Note that current limitations arising from heating of the device leads may occur with some lead mounting arrangements. (Refer to AN-1140) Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25C, L = 0.045mH RG = 25, IAS = 180A, VGS =10V. Part not recommended for use above this value . 2 --- 290c S ISD 180A, di/dt 600A/s, VDD V(BR)DSS, TJ 175C. Pulse width 400s; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. When mounted on 1" square PCB (FR-4 or G-10 Material). For recom mended footprint and soldering techniques refer to application note #AN-994. R is measured at TJ approximately 90C www.irf.com IRFP4468PbF 1000 1000 VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V 100 BOTTOM 10 4.0V 60s PULSE WIDTH Tj = 25C 1 BOTTOM 100 4.0V 60s PULSE WIDTH Tj = 175C 10 0.01 0.1 1 10 100 0.1 VDS , Drain-to-Source Voltage (V) 10 100 Fig 2. Typical Output Characteristics 1000 2.5 RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current() 1 VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics TJ = 175C 100 TJ = 25C 10 VDS = 25V 60s PULSE WIDTH 1 2.0 3.0 4.0 5.0 6.0 ID = 180A VGS = 10V 2.0 1.5 1.0 0.5 7.0 -60 -40 -20 VGS, Gate-to-Source Voltage (V) 35000 Fig 4. Normalized On-Resistance vs. Temperature VGS, Gate-to-Source Voltage (V) Coss = Cds + Cgd 25000 20 40 60 80 100 120 140 160 180 16 VGS = 0V, f = 100 kHz Ciss = Cgs + Cgd, Cds SHORTED Crss = Cgd 30000 0 TJ , Junction Temperature (C) Fig 3. Typical Transfer Characteristics C, Capacitance (pF) VGS 15V 10V 8.0V 6.0V 5.5V 5.0V 4.5V 4.0V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP Ciss 20000 15000 10000 Coss ID= 180A VDS = 80V VDS = 50V 12 VDS = 20V 8 4 5000 Crss 0 0 1 10 100 VDS , Drain-to-Source Voltage (V) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage www.irf.com 0 50 100 150 200 250 300 350 400 450 QG Total Gate Charge (nC) Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3 IRFP4468PbF 10000 ID, Drain-to-Source Current (A) 1000 ISD , Reverse Drain Current (A) TJ = 175C 100 10 TJ = 25C 1 OPERATION IN THIS AREA LIMITED BY R DS (on) 1000 100sec 100 1msec LIMITED BY PACKAGE 10 10msec 1 Tc = 25C Tj = 175C Single Pulse VGS = 0V 0.1 0.1 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 2.0 LIMITED BY PACKAGE ID , Drain Current (A) 250 200 150 100 50 0 75 100 125 150 175 V(BR)DSS , Drain-to-Source Breakdown Voltage 300 50 100 120 ID = 5mA 110 100 90 -60 -40 -20 TC , Case Temperature (C) 0 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature (C) Fig 9. Maximum Drain Current vs. Case Temperature Fig 10. Drain-to-Source Breakdown Voltage 3000 EAS, Single Pulse Avalanche Energy (mJ) 7.0 6.0 5.0 Energy (J) 10 Fig 8. Maximum Safe Operating Area Fig 7. Typical Source-Drain Diode Forward Voltage 25 1 VDS , Drain-toSource Voltage (V) VSD , Source-to-Drain Voltage (V) 4.0 3.0 2.0 1.0 ID 30A 41A BOTTOM 180A TOP 2500 2000 1500 1000 500 0 0.0 0 20 40 60 80 VDS, Drain-to-Source Voltage (V) Fig 11. Typical COSS Stored Energy 4 DC 100 25 50 75 100 125 150 175 Starting TJ, Junction Temperature (C) Fig 12. Maximum Avalanche Energy Vs. DrainCurrent www.irf.com IRFP4468PbF Thermal Response ( Z thJC ) 1 0.1 D = 0.50 0.20 0.10 0.05 0.02 0.01 J 0.01 R1 R1 J 1 R2 R2 R3 R3 Ri (C/W) C 1 2 3 2 Ci= i/Ri Ci= i/Ri 3 (sec) 0.063359 0.000278 0.110878 0.005836 0.114838 0.053606 0.001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Duty Cycle = Single Pulse 100 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150C and Tstart =25C (Single Pulse) 0.01 0.05 0.10 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25C and Tstart = 150C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 tav (sec) Fig 14. Typical Avalanche Current vs.Pulsewidth EAR , Avalanche Energy (mJ) 800 Notes on Repetitive Avalanche Curves , Figures 14, 15: (For further info, see AN-1005 at www.irf.com) 1. Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 16a, 16b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25C in Figure 14, 15). tav = Average time in avalanche. D = Duty cycle in avalanche = tav *f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) TOP Single Pulse BOTTOM 1% Duty Cycle ID = 180A 600 400 200 0 25 50 75 100 125 150 175 Starting TJ , Junction Temperature (C) PD (ave) = 1/2 ( 1.3*BV*Iav) = DT/ ZthJC Iav = 2DT/ [1.3*BV*Zth] EAS (AR) = PD (ave)*tav Fig 15. Maximum Avalanche Energy vs. Temperature www.irf.com 5 IRFP4468PbF 32 ID = 1.0A 4.0 ID = 1.0mA ID = 250A 3.5 24 IRRM - (A) VGS(th) Gate threshold Voltage (V) 4.5 3.0 2.5 2.0 16 IF = 72A VR = 85V 8 1.5 TJ = 125C TJ = 25C 0 1.0 -75 -50 -25 0 25 50 75 100 200 300 400 500 600 700 800 900 1000 100 125 150 175 dif / dt - (A / s) TJ , Temperature ( C ) Fig. 17 - Typical Recovery Current vs. dif/dt Fig 16. Threshold Voltage Vs. Temperature 1500 40 32 QRR - (nC) IRRM - (A) 1000 24 16 8 0 500 IF = 108A VR = 85V TJ = 125C TJ = 25C IF = 72A VR = 85V TJ = 125C TJ = 25C 0 100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) dif / dt - (A / s) Fig. 18 - Typical Recovery Current vs. dif/dt 2000 QRR - (nC) 1500 Fig. 19 - Typical Stored Charge vs. dif/dt IF = 108A VR = 85V TJ = 125C TJ = 25C 1000 500 0 100 200 300 400 500 600 700 800 900 1000 dif / dt - (A / s) 6 Fig. 20 - Typical Stored Charge vs. dif/dt www.irf.com IRFP4468PbF Driver Gate Drive D.U.T - - - * D.U.T. ISD Waveform Reverse Recovery Current + RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test VDD P.W. Period VGS=10V Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer + D= Period P.W. + + - Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt Re-Applied Voltage Body Diode VDD Forward Drop Inductor Current Inductor Curent ISD Ripple 5% * VGS = 5V for Logic Level Devices Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET(R) Power MOSFETs V(BR)DSS 15V DRIVER L VDS tp D.U.T RG + V - DD IAS VGS 20V A 0.01 tp I AS Fig 22a. Unclamped Inductive Test Circuit RD VDS Fig 22b. Unclamped Inductive Waveforms VDS 90% VGS D.U.T. RG + - VDD V10V GS 10% VGS Pulse Width 1 s Duty Factor 0.1 % td(on) Fig 23a. Switching Time Test Circuit tr t d(off) Fig 23b. Switching Time Waveforms Id Current Regulator Same Type as D.U.T. Vds Vgs 50K 12V tf .2F .3F D.U.T. + V - DS Vgs(th) VGS 3mA IG ID Current Sampling Resistors Fig 24a. Gate Charge Test Circuit www.irf.com Qgs1 Qgs2 Qgd Qgodr Fig 24b. Gate Charge Waveform 7 IRFP4468PbF TO-247AC Package Outline Dimensions are shown in millimeters (inches) TO-247AC Part Marking Information EXAMPLE: THIS IS AN IRFPE30 WIT H AS S EMBLY LOT CODE 5657 AS S EMBLED ON WW 35, 2001 IN T HE AS S EMBLY LINE "H" Note: "P" in ass embly line pos ition indicates "Lead-Free" INTERNATIONAL RECT IFIER LOGO PART NUMBER IRFPE30 56 135H 57 AS S EMBLY LOT CODE DAT E CODE YEAR 1 = 2001 WEEK 35 LINE H TO-247AC packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR's Web site. 8 IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information. 05/08 www.irf.com