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Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s
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MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4
February 2015
MMBF4117 / MMBF4118 / MMBF4119
N-Channel Switch
Ordering Information
Absolute Maximum Ratings(1), (2)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera-
ble above the re co mmen ded operating conditions and s tres si ng the parts to these level s i s not recommended. In addi-
tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The
absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted.
Notes:
1. These ratings are based on a maximum junction temperature of 150°C.
2. These are steady-state limits. Fairchild Semiconductor should be consulted on applic ations involving pulsed or
low-duty-cycle operations.
Part Number Top Mark Package Packing Method
MMBF4117 61A SOT-23 3L Tape and Reel
MMBF4118 61C SOT-23 3L Tape and Reel
MMBF4119 61E SOT-23 3L Tape and Reel
Symbol Parameter Value Unit
VDG Drain-Gate Voltage 40 V
VGS Gate-Source Voltage -40 V
IGF Forward Gate Current 50 mA
TJ, TSTG Operating and Storage Junction Temperature Range -55 to +150 °C
Description
This device is designed for low current DC and audio
applications. These devices provide excellent perfor-
mance as input stages for sub-picoamp instrumenta-
tion or any high impedance signal sources. Sourced
from proc ess 53. SOT-23
G
D
S
Note: Sourc e & Dr ain
are interchangeable
MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 2
Thermal Characteristics(3)
Values are at TA = 25°C unless otherwise noted.
Note:
3. Device mounted on FR-4 PCB 1.6 inch X 1.6 inch X 0.06 inch.
Electrical Characteristics
Values are at TA = 25°C unless otherwise noted.
Note:
4. Pulse test: pulse width 300 μs, duty cycle 1.0%
Symbol Parameter Max. Unit
PDTotal Device Dissipation 225 mW
Derate Above 25°C1.8mW/°C
RθJA Thermal Resistance, Junction-to-Ambient 556 °C/W
Symbol Parameter Conditions Min. Max. Unit
Off Characteristics
V(BR)GSS Gate-Source Breakdown Voltage IG = -1.0 μA, VDS = 0 -40 V
IGSS Gate Reverse Current VGS = -20 V, VDS = 0 -10 pA
VGS = -20 V, VDS = 0, TA = 150°C -25 nA
VGS(off) Gate-Source Cut-Off Voltage VDS = -10 V, ID = 1.0 nA MMBF4117 -0.6 -1.8 VMMBF4118 -1.0 -3.0
MMBF4119 -2.0 -6.0
On Characteristics
IDSS Zero-Gate Voltage Drain
Current(4) VDS = 10 V, VGS = 0 MMBF4117 30 90
μAMMBF4118 80 240
MMBF4119 200 600
Small Signal Characteristics
gfs Common-Source Forward
Transconductance VDS = 10 V, VGS = 0,
f = 1.0 kHz
MMBF4117 70 210
μmhosMMBF4118 80 250
MMBF4119 100 330
goss Common-Source Output
Conductance VDS = 10 V, VGS = 0,
f = 1.0 kHz
MMBF4117 3.0
μmhosMMBF4118 5.0
MMBF4119 10.0
Re(yfs) Common-Source Forward
Transconductance VDS = 10 V, VGS = 0,
f = 30 MHz
MMBF4117 60
μmhosMMBF4118 70
MMBF4119 90
Ciss Input Capacitance VDS = 10 V, VGS = 0, f = 1.0 kHz 3.0 pF
Crss Reverse Transfer Capacitance VDS = 10 V, VGS = 0, f = 1.0 MHz 1.5 pF
MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 3
Typical Performance Characteristics
Figure 1. Parameter Interactions Figure 2. Transfer Characteristics
Figure 3. Transfer Characteristics Figure 4. Transfer Characteristics
Figure 5. Transfer Characteristics Figure 6. Transfer Characteristics
MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 4
Typical Performance Characteristics (Continued)
Figure 7. Leakage Current vs. Voltage Figure 8. Common Drain-Source
Figure 9. Output Conductance vs. Drain Current Figure 10. Conductance vs. Voltage
Figure 11. Transconductance vs. Drain Current Figure 12. Noise Voltage vs. Frequency
MMBF4117 / MMBF4118 / MMBF4 119 — N-Channel Switch
© 1997 Fairchild Semiconductor Corporation www.fairchildsemi.com
MMBF4117 / MMBF4118 / MMBF4119 Rev. 1.4 5
Physical Dimensions
Figure 13. 3-LEAD, SOT23, JEDEC TO-236, LOW PROFILE
LAND PATTERN
RECOMMENDATION
NOTES: UNLESS OTHERWISE SPECIFIED
A) REFERENCE JEDEC REGISTRATION
TO-236, VARIATION AB, ISSUE H.
B) ALL DIMENSIONS ARE IN MILLIMETERS.
C) DIMENSIONS ARE INCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR EXTRUSIONS.
D) DIMENSIONING AND TOLERANCING PER
ASME Y14.5M - 1994.
E) DRAWING FILE NAME: MA03DREV10
3
12
SEE DETAIL A
SEATING
PLANE
SCALE: 2X
GAGE PLANE
(0.55)
(0.93)
1.20 MAX
C
0.10
0.00
0.10 C
2.40±0.30
2.92±0.20
1.30+0.20
-0.15
0.60
0.37
0.20 A B
1.90
0.95
(0.29)
0.95
1.40
2.20
1.00
1.90
0.25
0.23
0.08
0.20 MIN
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I73
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