MMBD4148 / SE / CC / CA Discrete POWER & Signal Technologies N MMBD4148 / SE / CC / CA 3 CONNECTION DIAGRAMS 5D 3 1 3 4148 1 2 3 2 NC 4148CC 1 4148S E 2 3 3 4148CA 2 SOT-23 MARKING MMBD4148 11 MMBD4148CA A11 MMBD4148CC 13 MMBD4148SE A13 1 1 2 1 2 High Conductance Ultra Fast Diode Sourced from Process 1P. Absolute Maximum Ratings* Symbol TA = 25C unless otherwise noted Parameter Value Units W IV Working Inverse Voltage 75 V IO Average Rectified Current 200 mA IF DC Forward Current 600 mA if Recurrent Peak Forward Current 700 mA if(surge) Tstg Peak Forward Surge Current Pulse width = 1.0 second Pulse width = 1.0 microsecond Storage Temperature Range 1.0 2.0 -55 to +150 A A C TJ Operating Junction Temperature 150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations Thermal Characteristics Symbol PD RJA TA = 25C unless otherwise noted Characteristic Total Device Dissipation Derate above 25C Thermal Resistance, Junction to Ambient Max Units MMBD4148/SE/CC/CA* 350 2.8 357 mW mW/C C/W *Device mounted on glass epoxy PCB 1.6" X 1.6" X 0.06"; mounting pad for the collector lead min. 0.93 in2 (continued) Electrical Characteristics Symbol Parameter TA = 25C unless otherwise noted Test Conditions I R = 100 A I R = 5.0 A VR = 20 V VR = 20 V, TA = 150C VR = 75 V I F = 10 mA Min Max Units 25 50 5.0 1.0 V V nA A A V BV Breakdown Voltage 100 75 IR Reverse Current VF Forward Voltage CO Diode Capacitance VR = 0, f = 1.0 MHz 4.0 pF TRR Reverse Recovery Time I F = 10 mA, VR = 6.0 V, I RR = 1.0 mA, RL = 100 4.0 nS MMBD4148 / SE / CC / CA High Conductance Low Leakage Diode