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NPN General Purpose Amplifier
BSS64
Absolute Maximum Ratings* T A = 25°C unless otherwise noted
This device is designed for general purpose high voltage amplifiers
and gas discharge display driving. Sourced from Process 16.
Symbol Parameter Value Units
VCEO Colle ctor-Emit t er Voltage 80 V
VCBO Collector-Base Voltage 120 V
VEBO Emitter-Base Voltage 5.0 V
ICCollector Current - Continuous 200 mA
TJ, Tstg Operating and Stora ge Junction Tempe rature Range -55 to +150 °C
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics T A = 25°C unless otherwise noted
Symbol Characteristic Max Units
*BSS64
PDTotal Device Dissipatio n
Derate above 25°C350
2.8 mW
mW/°C
RθJA Thermal Resistance, Junctio n to Ambient 357 °C/W
C
E
B
SOT-23
Mark: U3
*Device mounted on FR-4 PCB 40 mm X 40 mm X 1.5 mm.
1997 Fairchild Semiconductor Corporation
BSS64
3
NPN General Purpose Amplifier
(continued)
Electrical Characteristics T A = 25°C unless otherwise noted
OFF CHARACTERISTICS
Symbol Parameter Test Conditions Min Max Units
V(BR)CEO Collector-Emitter Breakdown Voltage IC = 4.0 m A, I B = 0 80 V
V(BR)CBO Collector-Base Breakdown Voltage IC = 100
µ
A, IE = 0 120 V
V(BR)EBO Emitter-Base Breakdown Voltage IE = 100
µ
A, IC = 0 5.0 V
ICBO Collector-Cutoff Current VCB = 90 V, IE = 0
VCB = 90 V, IE = 0, TA = 150°C0.1
50
µ
A
µ
A
IEBO Emi t t er-Cuto ff Current VEB = 5.0 V, IC = 0 200 nA
ON CHARACTERISTICS
hFE DC Current Gain IC = 10 mA, VCE = 1.0 V 20
VCE(sat)Collector-Emitter Saturation Volta ge IC = 4.0 mA, I B = 400
µ
A
IC = 50 mA, IB = 15 mA 0.15
0.2 V
V
VBE(sat)Base-Emitter Satu ration Voltage IC = 4.0 mA, I B = 400
µ
A1.2 V
SMALL SIGNAL CHARACTERISTICS
fTCurrent Gain - Ba ndwidth Product IC = 4.0 mA, VCE = 10,
f = 35 MHz 60 MHz
Cob Output Capacitance VCB = 10 V, f = 1.0 MHz 5.0 pF
Spice Model
NPN (Is=2.51 1f Xti=3 Eg=1.11 V af=100 Bf=242.6 Ne=1.249 Ise=2.51 1f Ikf=.3458 Xtb=1.5 Br=3.197 Nc=2 Isc=0
Ikr=0 Rc=1 Cjc=4.883p Mjc=.3047 Vjc=.75 Fc=.5 Cje=18.79p Mje=.3416 Vje=.75 Tr=1.202n Tf=560p Itf=50m
Vtf=5 Xtf=8 Rb=10)
Typical Characteristics
BSS64
Typic al P uls ed Curre nt G ain
vs Collector Cu rrent
0.1 0.2 0.5 1 2 5 10 20 50 100
0
50
100
150
200
250
I - COLLECTOR CURRENT (mA)
h - TYPICA L PU LSED CU RRENT GAIN
C
FE
125 ° C
25 °C
- 40 ° C
V = 5 V
CE
C o ll ecto r -Emitter Satur atio n
Vo ltag e vs C o llector Cu r rent
110100200
0
0.1
0.2
0.3
0.4
0.5
I - COLLEC TOR C UR RENT (mA)
V - COLLECTOR EM ITTE R VOLTAGE (V)
C
CESAT
25 °C
- 40 °C
125 °C
β= 10
Typical Characteristics
C o l l ecto r- E mitte r B r eakdown
Voltage with Resistance
Between Emit ter-Base
0.1 1 10 100 1000
160
180
200
220
240
260
RESISTAN C E (k )
BV - BREAKDOWN VOLTAGE (V)
CER
I = 1.0 m A
C
Input and Out put Capacitance
vs Reverse Voltage
0.1 1 10 100
0
5
10
15
20
25
30
V - CO LLECTOR VOLTAGE (V)
CAPACITANCE (pF)
C
f = 1.0 M Hz
CE
C
cb
ib
Smal l Signa l C ur rent Ga in
vs Co llect or Current
11050
0
4
8
12
16
I - COLLECTOR CURRENT (mA)
h - SMALL SIGN AL C U RRE NT GAIN
C
FE
FR E G = 20 MHz
V = 10V
CE
Coll ector -Cutoff Current
vs. A mb ient Temp er atu re
25 50 75 100 125
1
10
50
T - A MB IENT TEMP ERATURE ( C)
I - C OLLECTOR CU RR ENT (nA)
A
CBO
°
V = 100V
CB
B ase-Emitter Saturati o n
Vo ltage vs C o ll ector Cur rent
110100200
0
0.2
0.4
0.6
0.8
1
I - COLLECTOR CURRENT (mA)
V - BASE EMITTER VOLTAGE (V)
C
BESAT
β= 10
25 °C
- 40 °C
125 °C
Base Emitter ON Vol tage vs
Collect or Curre nt
0.1 1 10 100 200
0
0.2
0.4
0.6
0.8
1
I - COLLEC TOR CURRENT (mA)
V - BASE EMITTER ON VOLTAGE (V)
C
BEON
V = 5V
CE
25 °C
- 40 °C
125 °C
BSS64
NPN General Purpose Amplifier
(continued)
3
Typical Characteristics (continued)
Power Dissipation vs
Ambient Temperature
0 25 50 75 100 125 150
0
50
100
150
200
250
300
350
TEMPERATURE ( C)
P - POWER DISSIPAT ION (mW)
D
o
SOT-23
BSS64
NPN General Purpose Amplifier
(continued)
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ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
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ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
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