G E SOLID STATE Ol de -f3a7soan oorraias T-3/~/F Signal Transistors 2N3858-60, 2N3858A, 2N3859A Silicon Transistors TO-98 The GE/RCA 2N3858, 2N3859 and 2N3860 are planar epita- AM radio I.F. and converter applications. These types are xial passivated NPN silicon transistors designed primarilyfor supplied in JEDEC TO-98 package. Devices in TO-98 package are supplied with and without seating flange (see Dimensional Outline). MAXIMUM RATINGS, Absolute-Maximum Values: 2N3858 2N3859 2N3858A 2N3860 2N3859A COLLECTOR TO EMITTER VOLTAGE (VCEO) rece eee n ee teen eet n ene nett eer ener eabeneee 30 60 V EMITTER TO BASE VOLTAGE (Vegg).. 20-0022 2s eee eee cece ee 4 6 v COLLECTOR TO BASE VOLTAGE (Vgc) 6-6 cece eee ee ee cence es 30 60 V CONTINUOUS COLLECTOR CURRENT (Iq)(Note 1) ...........005 100 100 mA TOTAL POWER DISSIPATION (T, <25C) (P7) (Note 2) 360 360 mW OPERATING TEMPERATURE (Tj) ....0.. 0c secs cence nec ee eens -55t0+125 C STORAGE TEMPERATURE (Totg). 0. cece ee cee eee eee e eee eee n eee neees ~55t0+150 C LEAD TEMPERATURE, #16" + 132" (1.58mm + 0.6mm) from case for 10s max TT) +260 C NOTES: 1. Determined from power limitations due to saturation voltage at this current. 2. Derate 3.6 mW/C increase In ambient temperature above 25C. File Number 2060 23G E SOLID STATE OL DE ss75081 oo17920 2 , : 3875081 G & SOLID STATE OTE 17920 D Signal'Tiansistors T- 3 -/ F 2N3858-60, 2N3858A, 2N3859A ELECTRICAL CHARACTERISTICS, At Ambient Temperature (Ta) = 25C Unless Otherwise Specified LIMITS CHARACTERISTICS SYMBOL MIN. TYP, MAX. UNITS Collector Cutoff Current (Vcop = 40V) \ - - 50 nA (og = 40V, Ts = 100C) CBO - _ 10 uA Emitter Cutoff Current (Vego = 5V) _lepo - - 100 nA DC Forward Current Transfer Ratio 2N3858A (Voge = 1V, Ig = 10mA) 60 - - = 2N3859A (Vee = IV, Io = 10MA) 100 - - - 2NG858, 58A (Voge = 4.5V, lo = 2mA) hee 60 - 120 - 2N3859, 59A (Voge = 4.5V, Ig = 2mA} 100 - 200 - 2N9860 (Vog = 4.5V, Ip = 2mA) 150 ~ 300 - Collector Base Breakdown Voltage (lc = 0.1mA) BV cao | 40 = Emitter Base Breakdown Voltage (Ie = 0.imA) BVeso 5 - ~ Vv i CoflectorEmitter Breakdown Voltage (Ig = 1ma) BVcEO 40 = = i Collector Saturation Voltage (Ig = 10mA, Ig = 1mA) Voe(saTy - - 0.125 Gain Bandwidth Product (Voge = 10V, Ic = 2mA) 2N3858, A 90 125 250 2N3859, A tr 90 140 250 MHz 2N3860 90 170 250 ColiectorBase Time constant (Vce = 10V, ic = 2mA) TyC, = 65 150 ps Output Capacitance, Common Base (Veg = 10V, Ie = 0,f = 1Mc) Cobo 2 27 4 Input Capacitance, Common Base (Veg = 0.5V, Ie = 0,f = 1Mc) Cibo - 10 - pF Case Capacitance - - 0.66 - a a < -E : ' A= 55C 2 4 66, 2 4 66 2 468 Ol 1 100 0.01 COLLECTOR CURRENT {I) - mA COLLECTOR CURRENT (ic) - mA O2CS-A27E4 9203-42735 Fig. 1 Typical dc forward current transfer ratio characteristics for Fig. 2 Typical de forward-current transfer ratio characteristics for 2N3858 and 2N3858A. 2N3859 and 2N3859A. 246 E SOLID STATE 02 deff sazsoaa oorzsz. 4 9 Signal Transistors 2N3858-60, 2N3858A, 2N3859A T -3/179 COLLECTOR CURRENT (Ic) Le | a a bw =. 9 E < t+ 4 TZ /, 7 m RATIO (hpg) (AT Ta = 25C) 2 NORMALIZED DC FORWARD CURRENT-TRANSFER ot | ! Ld | | | 14 COLLECTOR CURRENT (ic) - mA 65 -3 - 25 55 O85 5 {45 92C8- 42736 COLLECTOR CURRENT (ic) - mA Fig. 8 Typical de forwera-current transter ratio characteristics for ; Sac 42759 2N3860. Fig. 4 Normalized dc forward current transfer ratio characteristic tor all types. COLLECTOR-TO-BASE VOLTAGE (Vc) A BE = 60 @naesgA, enaesga) eeonh b 4 > 70 V (2N3858, 2N3BS9, 2N3880) \e= ar 2 e 4 2 \ g 7 a5 hg es a0 E< 2 41 B 4 p bs us a 30 a8 | Eo 4 as 7 = | 1 i | = 55-25 5 35 65 5 125 60 AMBIENT TEMPERATURE (Ta} - C 9208-42743 Fig. 5 Typical collector-to-base cutoff current characteristic for all IPOs. COLLECTOR-TO-EMITTER VOLTAGE (Voce) -V 9205-42742 Fig. 6 Typical collector characteristics for 2N3858, h to 200s wa < se & 8 | at sf Ye L i 5 6 | | 3 | | L_ _ 5 e 4p al Ls A = o 5 g Z S 5 o 2 i a = ie 8 3 1 =ank 0 BASE CURRENT (Ip) = 0 CURRENTUp)eo | 8 20 40 60 80 109 COLLECTOR-TO-EMITTER VOLTAGE (VcE) - V COLLECTOR-TO-EMITTER VOLTAGE (Vcg)-V g2C8-42743 9208-42744 Fig. ? Typical collector characteristics for 2N3859. Fig. 8 Typical collector characteristics for 2N3860. 25GE SOLID STATE on deff as7sos1 corre. 9 3875081 GE SOLID STATE O1E 17922 D Signal Transistors T 3 [- / Gg 2N3858-60, 2N3858A, 2N3859A EMITTER-TO-BASE VOLTAGE (Vep)-V 2 4 oy w 2 4e 3 8 = 5 3 2Na880 +" 3 E Z tp 2858 de = Q | 4 2n3e58 a a se 2 9 g a es F < e E 0 9 < 5 = +? 3 g 3 [~~ Soe 2N3E58, 69, 60 lat 3 : MY 5 aol 88, ? 1 40 SOLLECTOR CURRENT (Ic)-mA 0 7 15 20 25 30 . . _ COLLECTOR-T0-BASE VOLTAGE (Vea) - Fig. 70 Typioa! galn-bendwidth characteristics for 2N3858 and 9205-42740 : Fig. 9 Typical output and input characteristics for 2N3858, 2N3859 and 2N3860. nN > * a oO = E E 8 2 4 & 2 4 68 2 468 0-01 10 oa 2 4 68, 204 68, 2.4 fay COLLECTOR CURRENT (Ic) - mA COLLECTOR CURRENT (ic) - mA ere. ar 7a 9208-42736 Fig. 11 Typical gain-bandwiath product cheracteristios for 2N3859 Fig. 12Typical gain-bandwidth product characteristics for 2N3860. and 2N3859A, EMITTER-TO-BASE VOLTAGE (Veg) -V 0 4 Sibo 2N3859A Cobo 2N3E58A, 9A INPUT CAPACITANCE (Cino) - pF OUTPUT CAPACITANCE (Cobo) - pF 0 7 1s 20 25 30 D COLLECTOR-TO-BASE VOLTAGE (VcR) -V COLLECTOR CUARENT (Ic) - mA 9203-42757 s2Cs-azrze Fig. 13Typical output and input Capacitance characteristics for Fig. 14 Typical collector-to-amitter saturation voltage 2N3858A and 2N3859A. characteristics 2N3858A and 2N3859A. 26 tamerG E SOLID STATE Ol ODE 36?5081 nOoi?dea 4 i 7 ow w Signal Transistors ye 2N3858-60, 2N3858A, 2N3859A T:3)-19 TEMPERATURE (Ta) = 25C o.4 *, ? 10 100 COLLECTOR CURRENT (Ic) - mA 9208-42727 Fig. 15 Typical base-to-emitter voltage characteristics for 2N3856A and 2N3859A. TERMINAL CONNECTIONS Lead 1 - Emitter Lead 2 - Collector Lead 3 - Base 27