Data Sheet
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© 2011 ROHM Co., Ltd. All rights reserved.
Zener diode
UDZV series
Applications Dimensions (Unit : mm) Land size figure (Unit : mm)
Constant voltage control
Features
1) Compact,2-pin mini-mold type for
high-density mounting. (UMD2)
2) High reliability.
3) Can be mounted automatically,
using chip mounter.
Structure
Construction
Silicon epitaxial planer
Taping dimensions (Unit : mm)
Absolute maximum ratings (Ta=25°C)
Symbol Unit
PmW
Tj °C
Tstg °C
Topr °C
Parameter Limits
Power dissipation 200
Junction temperature 150
Storage temperature 55 to 150
Operating temperature 55 to 150
UMD2
ROHM : UMD2
JEITA : SC-901A
JEDEC : SOD-323
EX. UDZV3.6B
2.1
0.8MIN.
0.9MIN.
4.0±0.1 2.0±0.05 φ1.55±0.05
1.40±0.1 4.0±0.1 φ1.05
2.75
3.5±0.05 1.75±0.1
8.0±0.2
0.0.1
1.0±0.1
2.8±0.1
0.3±0.05
0.7±0.2
    0.1
0.1±0.1
    0.05
1.7±0.1
2.5±0.2
1.25±0.1
dot
(y
ear week factor
y)
1/5 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UDZV series  
Electical characteristics (Ta=25°C)
MIN. MAX. Iz(mA) MAX. Iz(mA) MAX. Iz(mA) MAX. VR(V)
UDZV 3.6B 3.600 3.845 5.0 100 5.0 1000 1.0 10.0 1.0
UDZV 3.9B 3.890 4.160 5.0 100 5.0 1000 1.0 5.0 1.0
UDZV 4.3B 4.170 4.430 5.0 100 5.0 1000 1.0 5.0 1.0
UDZV 4.7B 4.550 4.750 5.0 100 5.0 800 0.5 2.0 1.0
UDZV 5.1B 4.980 5.200 5.0 80 5.0 500 0.5 2.0 1.5
UDZV 5.6B 5.490 5.730 5.0 60 5.0 200 0.5 1.0 2.5
UDZV 6.2B 6.060 6.330 5.0 60 5.0 100 0.5 1.0 3.0
UDZV 6.8B 6.650 6.930 5.0 40 5.0 60 0.5 0.5 3.5
UDZV 7.5B 7.280 7.600 5.0 30 5.0 60 0.5 0.5 4.0
UDZV 8.2B 8.020 8.360 5.0 30 5.0 60 0.5 0.5 5.0
UDZV 9.1B 8.850 9.230 5.0 30 5.0 60 0.5 0.5 6.0
UDZV 10B 9.770 10.210 5.0 30 5.0 60 0.5 0.1 7.0
UDZV 11B 10.760 11.220 5.0 30 5.0 60 0.5 0.1 8.0
UDZV 12B 11.740 12.240 5.0 30 5.0 80 0.5 0.1 9.0
UDZV 13B 12.910 13.490 5.0 37 5.0 80 0.5 0.1 10.0
UDZV 15B 14.340 14.980 5.0 42 5.0 80 0.5 0.1 11.0
UDZV 16B 15.850 16.510 5.0 50 5.0 80 0.5 0.1 12.0
UDZV 18B 17.560 18.350 5.0 65 5.0 80 0.5 0.1 13.0
UDZV 20B 19.520 20.390 5.0 85 5.0 100 0.5 0.1 15.0
UDZV 22B 21.540 22.470 5.0 100 5.0 100 0.5 0.1 17.0
UDZV 24B 23.720 24.780 5.0 120 5.0 120 0.5 0.1 19.0
UDZV 27B 26.190 27.530 5.0 150 5.0 150 0.5 0.1 21.0
UDZV 30B 29.190 30.690 5.0 200 5.0 200 0.5 0.1 23.0
UDZV 33B 32.150 33.790 5.0 250 5.0 250 0.5 0.1 25.0
UDZV 36B 35.070 36.870 5.0 300 5.0 300 0.5 0.1 27.0
(1) The zener voltage(Vz) is measured 40ms after power is supplied.
(2) The operating resistances(Zz,Zzk) are measured by superimposing a minute alternating current
on the regulated current(Iz)
MARKING (TYPE NO.)
TYPE TYPE NO. TYPE TYPE NO.
UDZV 3.6B 62 UDZV 12B 25
UDZV 3.9B 72 UDZV 13B 35
UDZV 4.3B 82 UDZV 15B 45
UDZV 4.7B 92 UDZV 16B 55
UDZV 5.1B A2 UDZV 18B 65
UDZV 5.6B C2 UDZV 20B 75
UDZV 6.2B E2 UDZV 22B 85
UDZV 6.8B F2 UDZV 24B 95
UDZV 7.5B H2 UDZV 27B A5
UDZV 8.2B J2 UDZV 30B C5
UDZV 9.1B L2 UDZV 33B E5
UDZV 10B 05 UDZV 36B F5
UDZV 11B 15   
TYP.
Symbol
Zener voltage Vz(V) Operating resistance Zz()Rising operataing
resistance Zz()
Reverse current
IR(A)
2/5 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UDZV series  
1
10
100
1000
0.001 0.01 0.1 1 10 100 1000
POWER DISSIPATION:Pd(mW)
TIME:t(ms)
PRSM-TIME CHARACTERISTICS
TEMP.COEFFICIENCE:γz(%/°C)
ZENER VOLTAGEVz(V)
γz-Vz CHARACTERISTICS
TIME:t(s)
Rth-t CHARACTERISTICS
TRANSIENT
THAERMAL IMPEDANCE:Rth (°C/W) REVERSE SURGE MAXIMUM
POWER:PRSM(W)
0
50
100
150
200
250
0 25 50 75 100 125 150
0.1
1
10
100
1000
0.001 0.01 0.1 1 10 100
0.001
0.01
0.1
1
10
0 5 10 15 20 25 30 35 40
24
2018
16
15
13
12
11
36
33
22 30
27
3.6
10
9.1
8.2
7.5
5.6
6.8
6.2
5.1
4.7
4.3
3.9
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
Vz-Iz CHARACTERISTICS
-0.08
-0.06
-0.04
-0.02
0
0.02
0.04
0.06
0.08
0.1
0 10203040
-5
0
5
10
15
20
25
30
35
40
AMBIENT TEMPERATURE:Ta(°C)
Pd-Ta CHARACTERISTICS
TEMP.COEFFICIENCE:γz(mV/°C)
t
PRSM
1pulse
INPUT WAVEFORM
%/°C
mV/°C
Mounted on epoxy board Rth
(j
-a
)
=365°C/W
Rth
(j
-c
)
130°C/W
3/5 2011.10 - Rev.A
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UDZV11B  
4/5 2011.10 - Rev.A
ZENER CURRENT:Iz(mA)
ZENER VOLTAGE:Vz(V)
VzIz CHARACTERISTICS REVERSE VOLT AGEVR(V)
VR-IR CHARACTERISTICS
REVERSE CURRENT:IR (pA)
CAPACITANC E BETWEEN
TERMINALS:Ct(pF)
REVERSE VOLT AGE:VR(V)
VR-Ct CHARACTERISTICS
Vz DISRESION MAP
ZENER VOLTAGE:Vz(V)
IR DISRESION MAP
REVERSE CURRENT:IR (pA)
Ct DISRESI ON MAP
CAPACITANCE
BETWEENTERMINALS:Ct(pF)
0.001
0.01
0.1
1
10
10 11 12
Ta=25°C Ta=125°C Ta=75°C Ta=25°C
0.01
0.1
1
10
100
1000
0123456789
Ta=125°C
Ta=25°C
Ta=75°C
1
10
100
02468
f=1MHz
10.8
10.9
11.0
11.1
11.2
11.3
AVE:11.014V
Ta=25°C
IZ=5mA
n=30pcs
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Ta=25°C
VR=8.0V
n=30pcs
AVE:1.117pA
10
11
12
13
14
15
16
17
18
19
20
AVE:15.07pF
Ta=25°C
f=1MHz
VR=0V
n=10pcs
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© 2011 ROHM Co., Ltd. All rights reserved.
Data Sheet
UDZV11B
 
5/5 2011.10 - Rev.A
0
5
10
15
20
25
30
AVE12.0kV
No break at 30kV No break at 30kV
ZENER CURRENT(mA)
ZzIz CHARACTERISTICS
DYNAMIC IMPEDANCE: Zz (Ω)
ESD DISPERSIO N MAP
ELECTROSTATIC
DISCHARGE TEST ESD [kV]
C=200pF
R=0Ω C=150pF
R=330Ω C=100pF
R=1.5kΩ
1
10
100
1000
0.1 110