MMBT2907AWT1G General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SC-70/SOT-323 package which is designed for low power surface mount applications. http://onsemi.com Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS COLLECTOR 3 Compliant 1 BASE MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO -60 Vdc Collector -Base Voltage VCBO -60 Vdc Emitter -Base Voltage VEBO -5.0 Vdc IC -600 mAdc Symbol Max Unit PD 150 mW RqJA 833 C/W TJ, Tstg -55 to +150 C Collector Current - Continuous 2 EMITTER 3 SC -70/SOT-323 CASE 419 -04 STYLE 3 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR- 5 Board (Note 1) TA = 25C Thermal Resistance Junction-to-Ambient Junction and Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 x 0.75 x 0.062 in. 1 2 MARKING DIAGRAM 20 MG G 1 20 M G = Specific Device Code = Date Code = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION Device MMBT2907AWT1G Package Shipping SC-70 3000 Tape & Reel (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2011 February, 2011 - Rev. 5 1 Publication Order Number: MMBT2907AWT1/D MMBT2907AWT1G ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit Collector -Emitter Breakdown Voltage (Note 2) (IC = -10 mAdc, IB = 0) V(BR)CEO -60 - Vdc Collector -Base Breakdown Voltage (IC = -10 mAdc, IE = 0) V(BR)CBO -60 - Vdc Emitter -Base Breakdown Voltage (IE = -10 mAdc, IC = 0) V(BR)EBO -5.0 - Vdc Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IBL - -50 nAdc Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ICEX - -50 nAdc 75 100 100 100 50 - - - - - - - -0.4 -1.6 - - -1.3 -2.6 fT 200 - MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo - 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo - 30 pF ton - 45 td - 10 tr - 40 ts - 80 tf - 30 toff - 100 OFF CHARACTERISTICS ON CHARACTERISTICS(3) DC Current Gain (Note 2) (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (IC = -500 mAdc, VCE = -10 Vdc) HFE Collector -Emitter Saturation Voltage (Note 2) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base -Emitter Saturation Voltage (Note 2) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (IC = -50 mAdc, VCE = 20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time Delay Time Rise Time (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) Storage Time Fall Time Turn-Off Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = 15 mAdc) 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. http://onsemi.com 2 ns MMBT2907AWT1G PACKAGE DIMENSIONS SC-70 (SOT-323) CASE 419-04 ISSUE N D NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. e1 DIM A A1 A2 b c D E e e1 L HE 3 E HE 1 2 b e A 0.05 (0.002) c A2 MIN 0.80 0.00 0.30 0.10 1.80 1.15 1.20 0.20 2.00 MILLIMETERS NOM MAX 0.90 1.00 0.05 0.10 0.70 REF 0.35 0.40 0.18 0.25 2.10 2.20 1.24 1.35 1.30 1.40 0.65 BSC 0.38 0.56 2.10 2.40 MIN 0.032 0.000 0.012 0.004 0.071 0.045 0.047 0.008 0.079 INCHES NOM 0.035 0.002 0.028 REF 0.014 0.007 0.083 0.049 0.051 0.026 BSC 0.015 0.083 MAX 0.040 0.004 0.016 0.010 0.087 0.053 0.055 0.022 0.095 STYLE 3: PIN 1. BASE 2. EMITTER 3. COLLECTOR L A1 SOLDERING FOOTPRINT* 0.65 0.025 0.65 0.025 1.9 0.075 0.9 0.035 0.7 0.028 SCALE 10:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. 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