VEMD5510C www.vishay.com Vishay Semiconductors Silicon PIN Photodiode FEATURES * Package type: surface-mount * Package form: top view * Dimensions (L x W x H in mm): 5 x 4 x 0.9 * Radiant sensitive area (in mm2): 7.5 * High photo sensitivity * Suppression filter for near infrared radiation * Fast response times * Angle of half sensitivity: = 65 * Floor life: 72 h, MSL 4, according to J-STD-020 DESCRIPTION VEMD5510C is a high speed and high sensitive PIN photodiode. It is a low profile surface-mount device (SMD) including the chip with a 7.5 mm2 sensitive area detecting visible light much like the human eye. The diode has its peak sensitivity at 550 nm and a low capacitance. * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS * Wearables * Optical heart rate monitoring * Ambient light sensors PRODUCT SUMMARY COMPONENT VEMD5510C Ira (A) () 0.5 (nm) 0.6 65 440 to 700 PACKAGE FORM Note * Test conditions see table "Basic Characteristics" ORDERING INFORMATION ORDERING CODE PACKAGING REMARKS VEMD5510C Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view VEMD5510C-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view Note * MOQ: minimum order quantity ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION Reverse voltage Power dissipation Tamb 25 C Junction temperature Operating temperature range Storage temperature range Soldering temperature According to reflow solder profile Fig. 8 Thermal resistance junction-to-ambient ESD safety HBM Rev. 1.1, 20-May-2019 2000 V, 1.5 k, 100 pF, 3 pulses SYMBOL VALUE VR 20 UNIT V PV 215 mW Tj 110 C Tamb -40 to +100 C Tstg -40 to +100 C Tsd 260 C RthJA 350 K/W ESDHBM 2 kV Document Number: 84354 1 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5510C www.vishay.com Vishay Semiconductors BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT IF = 50 mA VF - 0.9 1.3 V IR = 100 A, E = 0 V(BR) 20 - - V VR = 10 V, E = 0 Iro - 0.2 10 nA VR = 0 V, f = 1 MHz, E = 0 CD - 80 - pF Forward voltage Breakdown voltage Reverse dark current Diode capacitance VR = 3 V, f = 1 MHz, E = 0 CD - 30 40 pF EV = 100 lx, CIE illuminant A Vo - 240 - mV Temperature coefficient of Vo EV = 100 lx, CIE illuminant A TKVo - -2.5 - mV/K Short circuit current EV = 100 lx, CIE illuminant A Ik - 0.6 - A Ee = 0.2 mW/cm2, = 525 nm, VR = 5 V Ira 2.0 2.6 - A EV = 100 lx, CIE illuminant A, VR = 5 V A Open circuit voltage Reverse light current Ira 0.46 0.55 - Angle of half sensitivity - 65 - Wavelength of peak sensitivity p - 550 - nm 0.5 - 440 to 700 - nm Rise time VR = 5 V, RL = 50 , = 525 nm tr - 40 - ns Fall time VR = 5 V, RL = 50 , = 525 nm tf - 30 - ns Range of spectral bandwidth BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified) Basic characteristics graphs to be extended to 110 C ambient temperatures where applicable. 10 Ira - Reverse Light Current (A) Iro - Reverse Dark Current (nA) 1000 VR = 10 V 100 10 1 0.1 VR = 5 V, CIE illuminant A 1 0.1 0.01 0 20 40 60 80 100 Tamb - Ambient Temperature (C) Fig. 1 - Reverse Dark Current vs. Ambient Temperature Rev. 1.1, 20-May-2019 10 100 1000 EV - Illuminance (lx) Fig. 2 - Reverse Light Current vs. Irradiance Document Number: 84354 2 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5510C www.vishay.com 1000 lx 500 lx 250 lx 1 100 lx 50 lx 25 lx 0.1 10 lx EV (lx), CIE illuminant A 0.01 0 2 4 6 8 10 12 100 90 80 70 60 50 40 30 20 10 0 400 500 600 700 800 - Wavelength (nm) VR - Reverse Voltage (V) Fig. 3 - Reverse Light Current vs. Reverse Voltage Fig. 5 - Relative Spectral Sensitivity vs. Wavelength 0 90 20 30 Srpel - Relative Sensitivity Cp - Capacitance (pF) 10 f = 1 MHz, E = 0 80 70 60 50 40 30 20 10 0 0.001 900 1000 1100 40 1.0 0.9 50 0.8 60 70 0.7 - Angular Displacement Ira - Reverse Light Current (A) 10 S()rel - Relative Spectral Sensitivity (%) Vishay Semiconductors 80 0.01 0.1 1 10 0.6 0.4 0.2 0 VR - Reverse Voltage (V) Fig. 4 - Diode Capacitance vs. Reverse Voltage Rev. 1.1, 20-May-2019 Fig. 6 - Relative Sensitivity vs. Angular Displacement Document Number: 84354 3 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5510C www.vishay.com Vishay Semiconductors PACKAGE DIMENSIONS in millimeters Bottom view 4 2.1 1.8 3 5 1.8 Optical window Detail X ( 20 : 1 ) Optical center 3 0.9 0.15 0.2 0.1 Top view Tie bar, electrically connected to cathode Detail X 2 Recommended footprint 0.65 1.2 4.1 Cathode 1 0.6 0.9 1.2 0.8 1 5.2 2.5 Exposed pad (cathode) 0.4 (4 x) 3.1 NC 1 0.8 Center of device 0.8 2 Anode 0.6 (4 x) Drawing- No.: 6.550-5329.01-4 Issue: 3; 11.11.2016 Rev. 1.1, 20-May-2019 Not indicated tolerances 0.1 Technical drawings according to DIN specification Document Number: 84354 4 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5510C www.vishay.com Vishay Semiconductors TAPE AND REEL DIMENSIONS in millimeters Unreel direction Re el- O O 13 0.9 A Label posted here 12 .4 4 A 4 Sensor orientation mark pin 1 2 18 O 1.5 5.5 1.7 Drawing No.: AK-19.0010.17 Issue: preliminary; 01.09.2017 Rev. 1.1, 20-May-2019 Document Number: 84354 5 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VEMD5510C www.vishay.com Vishay Semiconductors SOLDER PROFILE DRYPACK Devices are packed in moisture barrier bags (MBB) to prevent the products from moisture absorption during transportation and storage. Each bag contains a desiccant. Axis Title 10000 300 Max. 260 C 255 C 240 C 217 C 245 C FLOOR LIFE 1000 200 Max. 30 s 1st line 2nd line 2nd line Temperature (C) 250 150 Max. 120 s 100 Max. 100 s Max. ramp down 6 C/s 100 Time between soldering and removing from MBB must not exceed the time indicated in J-STD-020: Moisture sensitivity: level 4 Floor life: 72 h Conditions: Tamb < 30 C, RH < 60 % Max. ramp up 3 C/s 50 DRYING 10 0 0 50 100 150 200 250 300 Time (s) 19841 Fig. 7 - Lead (Pb)-free Reflow Solder Profile According to J-STD-020D Rev. 1.1, 20-May-2019 In case of moisture absorption devices should be baked before soldering. Conditions see J-STD-020 or recommended conditions: 192 h at 40 C (+ 5 C), RH < 5 % or 96 h at 60 C (+ 5 C), RH < 5 % Document Number: 84354 6 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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