VEMD5510C
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Rev. 1.1, 20-May-2019 1Document Number: 84354
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Silicon PIN Photodiode
DESCRIPTION
VEMD5510C is a high speed and high sensitive PIN
photodiode. It is a low profile surface-mount device (SMD)
including the chip with a 7.5 mm2 sensitive area detecting
visible light much like the human eye. The diode has its
peak sensitivity at 550 nm and a low capacitance.
FEATURES
• Package type: surface-mount
• Package form: top view
• Dimensions (L x W x H in mm): 5 x 4 x 0.9
• Radiant sensitive area (in mm2): 7.5
• High photo sensitivity
• Suppression filter for near infrared radiation
• Fast response times
• Angle of half sensitivity: ϕ = ± 65°
• Floor life: 72 h, MSL 4, according to
J-STD-020
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Wearables
• Optical heart rate monitoring
• Ambient light sensors
Note
• Test conditions see table “Basic Characteristics”
Note
• MOQ: minimum order quantity
PRODUCT SUMMARY
COMPONENT Ira (μA) ϕ (°) λ0.5 (nm)
VEMD5510C 0.6 ± 65 440 to 700
ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VEMD5510C Tape and reel MOQ: 1000 pcs, 1000 pcs/reel Top view
VEMD5510C-GS15 Tape and reel MOQ: 5000 pcs, 5000 pcs/reel Top view
ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR20 V
Power dissipation Tamb ≤ 25 °C PV215 mW
Junction temperature Tj110 °C
Operating temperature range Tamb -40 to +100 °C
Storage temperature range Tstg -40 to +100 °C
Soldering temperature According to reflow solder profile Fig. 8 Tsd 260 °C
Thermal resistance junction-to-ambient RthJA 350 K/W
ESD safety HBM ± 2000 V, 1.5 kΩ, 100 pF, 3 pulses ESDHBM ≥ 2 kV
VEMD5510C
www.vishay.com Vishay Semiconductors
Rev. 1.1, 20-May-2019 2Document Number: 84354
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Basic characteristics graphs to be extended to 110 °C ambient temperatures where applicable.
Fig. 1 - Reverse Dark Current vs. Ambient Temperature Fig. 2 - Reverse Light Current vs. Irradiance
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage IF = 50 mA VF-0.91.3V
Breakdown voltage IR = 100 μA, E = 0 V(BR) 20 - - V
Reverse dark current VR = 10 V, E = 0 Iro - 0.2 10 nA
Diode capacitance VR = 0 V, f = 1 MHz, E = 0 CD-80-pF
VR = 3 V, f = 1 MHz, E = 0 CD-3040pF
Open circuit voltage EV = 100 lx, CIE illuminant A Vo- 240 - mV
Temperature coefficient of VoEV = 100 lx, CIE illuminant A TKVo --2.5-mV/K
Short circuit current EV = 100 lx, CIE illuminant A Ik-0.6-μA
Reverse light current Ee = 0.2 mW/cm2, λ = 525 nm, VR = 5 V Ira 2.0 2.6 - μA
EV = 100 lx, CIE illuminant A, VR = 5 V Ira 0.46 0.55 - μA
Angle of half sensitivity ϕ-± 65- °
Wavelength of peak sensitivity λp- 550 - nm
Range of spectral bandwidth λ0.5 - 440 to 700 - nm
Rise time VR = 5 V, RL = 50 Ω, λ = 525 nm tr-40-ns
Fall time VR = 5 V, RL = 50 Ω, λ = 525 nm tf-30-ns
0.1
1
10
100
1000
020406080100
Iro - Reverse Dark Current (nA)
Tamb - Ambient Temperature (°C)
VR= 10 V
0.01
0.1
1
10
10 100 1000
Ira - Reverse Light Current (μA)
EV- Illuminance (lx)
VR= 5 V, CIE illuminant A
VEMD5510C
www.vishay.com Vishay Semiconductors
Rev. 1.1, 20-May-2019 3Document Number: 84354
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 3 - Reverse Light Current vs. Reverse Voltage
Fig. 4 - Diode Capacitance vs. Reverse Voltage
Fig. 5 - Relative Spectral Sensitivity vs. Wavelength
Fig. 6 - Relative Sensitivity vs. Angular Displacement
0.01
0.1
1
10
024681012
Ira - Reverse Light Current (μA)
VR- Reverse Voltage (V)
50 lx
100 lx
250 lx
25 lx
10 lx
500 lx
1000 lx
EV(lx), CIE illuminant A
0
10
20
30
40
50
60
70
80
90
0.001 0.01 0.1 1 10
Cp- Capacitance (pF)
VR- Reverse Voltage (V)
f = 1 MHz, E = 0
0
10
20
30
40
50
60
70
80
90
100
400 500 600 700 800 900 1000 1100
S(λ)rel - Relative Spectral Sensitivity (%)
λ- Wavelength (nm)
0.4 0.2 00.6
0.9
0.8
0°
30°
10° 20°
40°
50°
60°
70°
80°
0.7
1.0
ϕ - Angular Displacement
Srpel - Relative Sensitivity
VEMD5510C
www.vishay.com Vishay Semiconductors
Rev. 1.1, 20-May-2019 4Document Number: 84354
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters
1
1
5.2
1
Center of device
Recommended footprint
4.1
Optical
window
Top view
Bottom view
Detail X ( 20 : 1 )
0.2
0.1
4
5
2.1
1.8
3
3
Optical
center
1.8
Detail X
0.9 ± 0.15
Tie bar, electrically connected to cathode
0.8 1.2
0.9
1.2
2.5
0.8
0.6 (4 x)
3.1
Exposed pad
(cathode)
0.4 (4 x)
2
2
Cathode
0.6
NC
Anode
0.65
0.8
Drawing- No.: 6.550-5329.01-4
Issue: 3; 11.11.2016
Not indicated tolerances ± 0.1
Technical drawings
according to DIN
specication
VEMD5510C
www.vishay.com Vishay Semiconductors
Rev. 1.1, 20-May-2019 5Document Number: 84354
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TAPE AND REEL DIMENSIONS in millimeters
Drawing No.: AK-19.0010.17
Issue: preliminary; 01.09.2017
A
A
Sensor orientation mark pin 1
Reel-Ø
Ø 13
Unreel direction
Label posted here
5.5 1.7
42
12
40.9
18.4
Ø 1.5
VEMD5510C
www.vishay.com Vishay Semiconductors
Rev. 1.1, 20-May-2019 6Document Number: 84354
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SOLDER PROFILE
Fig. 7 - Lead (Pb)-free Reflow Solder Profile
According to J-STD-020D
DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
FLOOR LIFE
Time between soldering and removing from MBB must not
exceed the time indicated in J-STD-020:
Moisture sensitivity: level 4
Floor life: 72 h
Conditions: Tamb < 30 °C, RH < 60 %
DRYING
In case of moisture absorption devices should be
baked before soldering. Conditions see J-STD-020 or
recommended conditions:
192 h at 40 °C (+ 5 °C), RH < 5 %
or
96 h at 60 °C (+ 5 °C), RH < 5 %
240 °C
Max. 260 °C
217 °C
255 °C
19841
10
100
1000
10000
0
100
200
300
0 50 100 150 200 300
Axis Title
1st line
2nd line
2nd line
Temperature (°C)
Time (s)
50
150
250
250
245 °C
Max. 100 s
Max. 30 s
Max. 120 s
Max. ramp down 6 °C/s
Max. ramp up 3 °C/s
Legal Disclaimer Notice
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Revision: 01-Jan-2021 1Document Number: 91000
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