7MP05SF-TL-E - ON SEMICONDUCTOR

7MP05SF

No.8667-1/4

Features

•High fT and small Cre (fT=750MHz typ, Cre=1.3pF typ).

•Complementary pair with the 7MN05SF.

•Small package permitting 7MP05SF applied sets to made small and slim.

Specifications

Absolute Maximum Ratings at Ta=25°C

Parameter Symbol Conditions Ratings Unit

Collector-to-Base Voltage VCBO --15 V

Collector-to-Emitter Voltage VCEO --12 V

Emitter-to-Base Voltage VEBO --3 V

Collector Current IC--50 mA

Collector Dissipation PCMounted on a ceramic board (600mm2✕0.8mm) 150 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg --55 to +150 °C

Electrical Characteristics at Ta=25°C

Ratings

Parameter Symbol Conditions min typ max Unit

Collector Cutoff Current ICBO VCB=--12V, IE=0A --0.1 µA

Emitter Cutoff Current IEBO VEB=--2V, I C=0A --0.1 µA

DC Current Gain hFE VCE=--10V, IC=--5mA 60 200

Gain-Bandwidth Product fTVCE=--10V, IC=--5mA 750 MHz

Output Capacitance Cob VCB=--10V, f=1MHz 1.7 pF

Reverse T ransfer Capacitance Cre VCB=--10V, f=1MHz 1.3 pF

Collector-to-Emitter Saturation Voltage VCE(sat) IC=--10mA, IB=--1mA --0.1 --0.3 V

Noise Figure NF VCE=--10V, IC=--10mA, f=100MHz 3.0 dB

Marking : WD

Ordering number : EN8667A

72606 / 32406 MS IM TB-00002143 / N3005AA MS IM TB-00001514

7MP05SF PNP Epitaxial Planar Silicon Transistor

High-Frequency General-Purpose

Amplifier Applications

SANYO Semiconductors

DATA SHEET

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Any and all SANYO Semiconductor products described or contained herein do not have specifications

that can handle applications that require extremely high levels of reliability, such as life-support systems,

aircraft's control systems, or other applications whose failure can be reasonably expected to result in

serious physical and/or material damage. Consult with your SANYO Semiconductor representative

nearest you before usingany SANYO Semiconductor products described or contained herein in such

applications.

SANYO Semiconductor assumes no responsibility for equipment failures that result from using products

at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition

ranges, or other parameters) listed in products specifications of any and all SANYO Semiconductor

products described or contained herein.

7MP05SF

No.8667-2/4

Package Dimensions

unit : mm

7029-002

IC -- VCE

Collector-to-Emitter Voltage, VCE -- V

Collector Current, IC -- mA

IC -- VBE

Base-to-Emitter Voltage, VBE -- V

Collector Current, IC -- mA

DC Current Gain, hFE

hFE -- IC

Gain-Bandwidth Product, fT -- MHz

fT -- IC

Collector Current, IC -- mA

--60

--50

--40

--30

--20

--10

00 --2 --4 --8 --14--12--10--6

IT09510

IT09512

100

--0.1 23 75--1.0 23 75--10 23 75--100

--700µA

--600µA

--500µA

--400µA

--300µA

--200µA

--100µA

IB=0µA

VCE= --10V

IT09513

1000

100

23 752375

--1.0 --10 --100

VCE= --10V

f=100MHz

IT09924

--60

--40

--50

--30

--20

--10

00 --0.2 --0.4 --0.6 --1.2--1.0--0.8

VCE= --10V

0.6

0.25

0.2

0.070.07

1.4

0.45

0.3 0.3

1.4

0.8

0.1

Top View

Bottom View

1 : Base

2 : Emitter

3 : Collector

SANYO : SSFP

7MP05SF

No.8667-3/4

Power Gain, PG -- dB

Noise Figure, NF -- dB

VCE(sat) -- IC

Collector Current, IC -- mA

Collector-to-Base Voltage, VCB -- V

Output Capacitance, Cob

-- pF

Cob -- VCB

PG, NF -- IC

Collector Current, IC -- mA

Collector-to-Emitter

Saturation Voltage, VCE(sat) -- V

Collector-to-Base Voltage, VCB -- V

Reverse Transfer Capacitance, Cre

-- pF

Cre -- VCB

IT09514

IT09516

1.0

375--1.0 23 7523

--10 75 --100

IT09517

VCE= --10V

f=100MHz

IT09515

IT09807

0 20 40 60 80 100 120 140 160

100

150

200

PC -- Ta

Collector Dissipation, PC -- mW

Ambient Temperature, Ta -- °C

Mounted on a ceramic board (600mm

✕0.8mm)

--0.1

--1.0

323 75--1.0 23 75--10 2735

1.0

--0.1 23 75--1.0 23 752

--10

f=1MHz

1.0

--0.1 22

f=1MHz

IC / IB=10

375--1.0 23 75--10

7MP05SF

No.8667-4/4

This catalog provides information as of March, 2006. Specifications and information herein are subject

to change without notice.

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