BTA208X-600B 3Q Hi-Com Triac 19 September 2018 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits * * * * * * * 3Q technology for improved noise immunity High commutation capability with maximum false trigger immunity High immunity to false turn-on by dV/dt High voltage capability Isolated mounting base package Planar passivated for voltage ruggedness and reliability Triggering in three quadrants only 3. Applications * * * Electronic thermostats General purpose motor controls Rectifier-fed DC inductive loads e.g. DC motors and solenoids 4. Quick reference data Table 1. Quick reference data Symbol Parameter VDRM repetitive peak offstate voltage IT(RMS) RMS on-state current ITSM Tj Conditions Min Typ Max Unit - - 600 V - - 8 A non-repetitive peak on- full sine wave; Tj(init) = 25 C; tp = 20 ms; Fig. 4; Fig. 5 state current - - 65 A full sine wave; Tj(init) = 25 C; tp = 16.7 ms - - 71 A - - 125 C VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 C; Fig. 7 2 18 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 2 21 50 mA full sine wave; Th 73 C; Fig. 1; Fig. 2; Fig. 3 junction temperature Static characteristics IGT gate trigger current BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 C; Fig. 7 2 34 50 mA IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - 31 60 mA VT on-state voltage IT = 10 A; Tj = 25 C; Fig. 10 - 1.3 1.65 V Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000 4000 - V/s dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 C; IT(RMS) = 8 A; dVcom/dt = 20 V/s; (snubberless condition); gate open circuit; Fig. 12 - 14 - A/ms 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb n.c. mounting base; isolated Graphic symbol mb T2 sym051 T1 G 1 2 3 TO-220F (SOT186A) 6. Ordering information Table 3. Ordering information Type number BTA208X-600B BTA208X-600B Product data sheet Package Name Description Version TO-220F plastic single-ended package; isolated heatsink mounted; 1 mounting hole; 3-lead TO-220 "full pack" SOT186A All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 2 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current ITSM non-repetitive peak onstate current 2 Conditions 2 Min Max Unit - 600 V full sine wave; Th 73 C; Fig. 1; Fig. 2; Fig. 3 - 8 A full sine wave; Tj(init) = 25 C; tp = 20 ms; Fig. 4; Fig. 5 - 65 A full sine wave; Tj(init) = 25 C; tp = 16.7 ms - 71 A I t I t for fusing tp = 10 ms; SIN - 21 As dIT/dt rate of rise of on-state current IG = 0.2 A - 100 A/s IGM peak gate current - 2 A PGM peak gate power - 5 W PG(AV) average gate power - 0.5 W Tstg storage temperature -40 150 C Tj junction temperature - 125 C over any 20 ms period 003aaa969 10 IT(RMS) IT(RMS) (A) (A) 73 C 8 20 6 15 4 10 2 5 0 - 50 0 50 100 Th (C) 0 10- 2 150 Fig. 1. RMS on-state current as a function of heatsink temperature; maximum values BTA208X-600B Product data sheet 003aaa970 25 10- 1 1 10 surge duration (s) f = 50 Hz; Th = 73 C Fig. 2. RMS on-state current as a function of surge duration; maximum values All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 3 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac 003aaa967 12 Ptot (W) 10 8 6 conduction angle (degrees) form factor a 30 60 90 120 180 2.816 1.967 1.570 1.329 1.110 = 180 120 71 Th(max) (C) 80 90 89 60 30 98 4 107 2 116 0 0 2 4 6 8 125 10 IT(RMS) (A) = conduction angle a = form factor = IT(RMS) / IT(AV) Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values 003aaa968 80 ITSM (A) 60 40 ITSM IT 20 t 1/f 0 Tj(init) = 25 C max 1 102 10 number of cycles 103 f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values BTA208X-600B Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 4 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac 003aab121 103 ITSM IT t ITSM (A) tp Tj(init) = 25 C max (1) 102 10 10- 2 10- 1 1 10 tp (ms) 102 tp 20 ms (1) dIT/dt limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values BTA208X-600B Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 5 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac 8. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-h) thermal resistance from junction to heatsink full cycle or half cycle; with heatsink compound; Fig. 6 - - 4.5 K/W full cycle or half cycle; without heatsink compound; Fig. 6 - - 6.5 K/W thermal resistance from junction to ambient free air in free air - 55 - K/W Rth(j-a) 003aaf915 10 (1) (2) Zth(j-h) (K/W) 1 (3) (4) 10- 1 P 10- 2 t tp 10- 3 10- 5 10- 4 10- 3 10- 2 10- 1 1 10 tp (s) (1) Unidirectional (half cycle) without heatsink compound (2) Unidirectional (half cycle) with heatsink compound (3) Bidirectional (full cycle) without heatsink compound (4) Bidirectional (full cycle) with heatsink compound Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration 9. Isolation characteristics Table 6. Isolation characteristics Symbol Parameter Conditions Min Typ Max Unit Visol(RMS) RMS isolation voltage from all terminals to external heatsink; sinusoidal waveform; clean and dust free; 50 Hz f 60 Hz; RH 65 %; Th = 25 C - - 2500 V Cisol isolation capacitance from main terminal 2 to external heatsink; f = 1 MHz; Th = 25 C - 10 - pF BTA208X-600B Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 6 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac 10. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 C; Fig. 7 2 18 50 mA VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 C; Fig. 7 2 21 50 mA VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 C; Fig. 7 2 34 50 mA VD = 12 V; IG = 0.1 A; T2+ G+; Tj = 25 C; Fig. 8 - 31 60 mA VD = 12 V; IG = 0.1 A; T2+ G-; Tj = 25 C; Fig. 8 - 34 90 mA VD = 12 V; IG = 0.1 A; T2- G-; Tj = 25 C; Fig. 8 - 30 60 mA Static characteristics IGT IL gate trigger current latching current IH holding current VD = 12 V; Tj = 25 C; Fig. 9 - 31 60 mA VT on-state voltage IT = 10 A; Tj = 25 C; Fig. 10 - 1.3 1.65 V VGT gate trigger voltage VD = 12 V; IT = 0.1 A; Tj = 25 C; Fig. 11 - 0.7 1 V VD = 400 V; IT = 0.1 A; Tj = 125 C; Fig. 11 0.25 0.4 - V VD = 600 V; Tj = 125 C - 0.1 0.5 mA ID off-state current Dynamic characteristics dVD/dt rate of rise of off-state voltage VDM = 402 V; Tj = 125 C; (VDM = 67% of VDRM); exponential waveform; gate open circuit 1000 4000 - V/s dIcom/dt rate of change of commutating current VD = 400 V; Tj = 125 C; IT(RMS) = 8 A; dVcom/dt = 20 V/s; (snubberless condition); gate open circuit; Fig. 12 - 14 - A/ms BTA208X-600B Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 7 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac 003aac888 3 001aab100 3 (1) IGT IL IL(25C) IGT(25C) 2 2 (2) (3) 1 1 0 - 50 0 50 100 Tj (C) 0 -50 150 (1) T2- G(2) T2+ G(3) T2+ G+ 0 50 100 Tj (C) 150 Fig. 8. Normalized latching current as a function of junction temperature Fig. 7. Normalized gate trigger current as a function of junction temperature 001aab099 3 003aaa971 25 IT (A) IH IH(25C) 20 2 15 10 1 5 0 -50 0 50 100 Tj (C) 0 150 (1) 0 (2) (3) 1 2 VT (V) 3 Vo = 1.264 V; Rs = 0.0378 (1) Tj = 125 C; typical values (2) Tj = 125 C; maximum values (3) Tj = 25 C; maximum values Fig. 9. Normalized holding current as a function of junction temperature Fig. 10. On-state current as a function of on-state voltage BTA208X-600B Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 8 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac 001aab101 1.6 003aaa973 103 VGT dIcom/dt (A/ms) VGT(25C) 102 1.2 typ min 0.8 0.4 -50 10 0 50 100 Tj (C) 1 150 Fig. 11. Normalized gate trigger voltage as a function of junction temperature BTA208X-600B Product data sheet 20 60 100 Tj (C) 140 Fig. 12. Rate of change of commutating current as a function of junction temperature; typical and minimum values All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 9 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac 11. Package outline Fig. 13. Package outline TO-220F (SOT186A) BTA208X-600B Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 10 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac Right to make changes -- WeEn Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice. This document supersedes and replaces all information supplied prior to the publication hereof. 12. Legal information Data sheet status Document status [1][2] Product status [3] Objective [short] data sheet Development This document contains data from the objective specification for product development. Preliminary [short] data sheet Qualification This document contains data from the preliminary specification. Product [short] data sheet Production This document contains the product specification. [1] [2] [3] Definition Definitions Draft -- The document is a draft version only. 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All rights reserved 11 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac Translations -- A non-English (translated) version of a document is for reference only. The English version shall prevail in case of any discrepancy between the translated and English versions. Trademarks Notice: All referenced brands, product names, service names and trademarks are the property of their respective owners. BTA208X-600B Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 12 / 13 BTA208X-600B WeEn Semiconductors 3Q Hi-Com Triac 13. Contents 1. General description......................................................1 2. Features and benefits.................................................. 1 3. Applications.................................................................. 1 4. Quick reference data....................................................1 5. Pinning information......................................................2 6. Ordering information....................................................2 7. Limiting values............................................................. 3 8. Thermal characteristics............................................... 6 9. Isolation characteristics...............................................6 10. Characteristics............................................................ 7 11. Package outline........................................................ 10 12. Legal information..................................................... 11 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved For more information, please visit: http://www.ween-semi.com For sales office addresses, please send an email to: salesaddresses@ween-semi.com Date of release: 19 September 2018 BTA208X-600B Product data sheet All information provided in this document is subject to legal disclaimers. 19 September 2018 (c) WeEn Semiconductors Co., Ltd. 2018. All rights reserved 13 / 13