BTA208X-600B,127 - WEEN SEMICONDUCTOR(HONG KONG)CO.,LIMITED

BTA208X-600B

3Q Hi-Com Triac

19 September 2018 Product data sheet

1. General description

Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic

package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur.

This "series B" triac will commutate the full rated RMS current at the maximum rated junction

temperature without the aid of a snubber.

2. Features and benefits

•3Q technology for improved noise immunity

•High commutation capability with maximum false trigger immunity

•High immunity to false turn-on by dV/dt

•High voltage capability

•Isolated mounting base package

•Planar passivated for voltage ruggedness and reliability

•Triggering in three quadrants only

3. Applications

•Electronic thermostats

•General purpose motor controls

•Rectifier-fed DC inductive loads e.g. DC motors and solenoids

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDRM repetitive peak off-

state voltage

- - 600 V

IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1;

Fig. 2; Fig. 3

- - 8 A

full sine wave; Tj(init) = 25 °C;

tp = 20 ms; Fig. 4; Fig. 5

- - 65 AITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C;

tp = 16.7 ms

- - 71 A

Tjjunction temperature - - 125 °C

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

2 18 50 mAIGT gate trigger current

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

2 21 50 mA

WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 2 / 13

Symbol Parameter Conditions Min Typ Max Unit

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

2 34 50 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 31 60 mA

VTon-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 402 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

1000 4000 - V/µs

dIcom/dt rate of change of

commutating current

VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;

dVcom/dt = 20 V/µs; (snubberless

condition); gate open circuit; Fig. 12

- 14 - A/ms

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 T1 main terminal 1

2 T2 main terminal 2

3 G gate

mb n.c. mounting base; isolated

321

TO-220F (SOT186A)

sym051

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

BTA208X-600B TO-220F plastic single-ended package; isolated heatsink mounted; 1

mounting hole; 3-lead TO-220 "full pack"

SOT186A

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3Q Hi-Com Triac

Product data sheet 19 September 2018 3 / 13

7. Limiting values

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDRM repetitive peak off-state

voltage

- 600 V

IT(RMS) RMS on-state current full sine wave; Th ≤ 73 °C; Fig. 1; Fig. 2;

Fig. 3

- 8 A

full sine wave; Tj(init) = 25 °C; tp = 20 ms;

Fig. 4; Fig. 5

- 65 AITSM non-repetitive peak on-

state current

full sine wave; Tj(init) = 25 °C; tp = 16.7 ms - 71 A

I2t I2t for fusing tp = 10 ms; SIN - 21 A²s

dIT/dt rate of rise of on-state

current

IG = 0.2 A - 100 A/µs

IGM peak gate current - 2 A

PGM peak gate power - 5 W

PG(AV) average gate power over any 20 ms period - 0.5 W

Tstg storage temperature -40 150 °C

Tjjunction temperature - 125 °C

Th(°C)

- 50 1501000 50

003aaa969

IT(RMS)

73 °C

(A)

Fig. 1. RMS on-state current as a function of heatsink

temperature; maximum values

surge duration (s)

10- 2 10110- 1

003aaa970

IT(RMS)

(A)

f = 50 Hz; Th = 73 °C

Fig. 2. RMS on-state current as a function of surge

duration; maximum values

WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 4 / 13

003aaa967

Ptot

IT(RMS) (A)

0 1084 62

(W)

107

116

125

Th(max)

(°C)

α = 180°

120°

90°

60°

30°

conduction

angle

(degrees)

form

factor

120

180

2.816

1.967

1.570

1.329

1.110

α = conduction angle

a = form factor = IT(RMS) / IT(AV)

Fig. 3. Total power dissipation as a function of RMS on-state current; maximum values

003aaa968

ITSM

number of cycles

1 103

102

(A)

TSM

j(init)

= 25 °C max

1/f

f = 50 Hz

Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum

values

WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 5 / 13

003aab121

tp(ms)

10- 2 102

1010- 1 1

102

103

ITSM

(A)

(1)

j(init)

C m

tp ≤ 20 ms

(1) dIT/dt limit

Fig. 5. Non-repetitive peak on-state current as a function of pulse width; maximum values

WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 6 / 13

8. Thermal characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

full cycle or half cycle; with heatsink

compound; Fig. 6

- - 4.5 K/WRth(j-h) thermal resistance

from junction to

heatsink full cycle or half cycle; without heatsink

compound; Fig. 6

- - 6.5 K/W

Rth(j-a) thermal resistance

from junction to

ambient free air

in free air - 55 - K/W

003aaf915

10- 1

10- 2

Zth(j-h)

(K/W)

10- 3

tp(s)

10- 5 1 1010- 1

10- 2

10- 4 10- 3

(1)

(2)

(3)

(4)

(1) Unidirectional (half cycle) without heatsink compound

(2) Unidirectional (half cycle) with heatsink compound

(3) Bidirectional (full cycle) without heatsink compound

(4) Bidirectional (full cycle) with heatsink compound

Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse duration

9. Isolation characteristics

Table 6. Isolation characteristics

Symbol Parameter Conditions Min Typ Max Unit

Visol(RMS) RMS isolation voltage from all terminals to external heatsink;

sinusoidal waveform; clean and dust

free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;

Th = 25 °C

- - 2500 V

Cisol isolation capacitance from main terminal 2 to external

heatsink; f = 1 MHz; Th = 25 °C

- 10 - pF

WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 7 / 13

10. Characteristics

Table 7. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

VD = 12 V; IT = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 7

2 18 50 mA

VD = 12 V; IT = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 7

2 21 50 mA

IGT gate trigger current

VD = 12 V; IT = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 7

2 34 50 mA

VD = 12 V; IG = 0.1 A; T2+ G+;

Tj = 25 °C; Fig. 8

- 31 60 mA

VD = 12 V; IG = 0.1 A; T2+ G-;

Tj = 25 °C; Fig. 8

- 34 90 mA

ILlatching current

VD = 12 V; IG = 0.1 A; T2- G-;

Tj = 25 °C; Fig. 8

- 30 60 mA

IHholding current VD = 12 V; Tj = 25 °C; Fig. 9 - 31 60 mA

VTon-state voltage IT = 10 A; Tj = 25 °C; Fig. 10 - 1.3 1.65 V

VD = 12 V; IT = 0.1 A; Tj = 25 °C;

Fig. 11

- 0.7 1 VVGT gate trigger voltage

VD = 400 V; IT = 0.1 A; Tj = 125 °C;

Fig. 11

0.25 0.4 - V

IDoff-state current VD = 600 V; Tj = 125 °C - 0.1 0.5 mA

Dynamic characteristics

dVD/dt rate of rise of off-state

voltage

VDM = 402 V; Tj = 125 °C; (VDM = 67%

of VDRM); exponential waveform; gate

open circuit

1000 4000 - V/µs

dIcom/dt rate of change of

commutating current

VD = 400 V; Tj = 125 °C; IT(RMS) = 8 A;

dVcom/dt = 20 V/µs; (snubberless

condition); gate open circuit; Fig. 12

- 14 - A/ms

WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 8 / 13

Tj(°C)

- 50 1501000 50

003aac888

(1)

(2)

(3)

IGT

IGT(25°C)

(1) T2- G-

(2) T2+ G-

(3) T2+ G+

Fig. 7. Normalized gate trigger current as a function of

junction temperature

Tj (°C)

-50 1501000 50

001aab100

IL(25°C)

Fig. 8. Normalized latching current as a function of

junction temperature

Tj (°C)

-50 1501000 50

001aab099

IH(25°C)

Fig. 9. Normalized holding current as a function of

junction temperature

003aaa971

VT(V)

0 321

(A)

(1) (2) (3)

Vo = 1.264 V; Rs = 0.0378 Ω

(1) Tj = 125 °C; typical values

(2) Tj = 125 °C; maximum values

(3) Tj = 25 °C; maximum values

Fig. 10. On-state current as a function of on-state

voltage

WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 9 / 13

Tj (°C)

-50 1501000 50

001aab101

0.8

1.2

1.6

0.4

VGT

VGT(25°C)

Fig. 11. Normalized gate trigger voltage as a function of

junction temperature

(

)

(

)

Fig. 12. Rate of change of commutating current as a

function of junction temperature; typical and minimum

values

WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 10 / 13

11. Package outline

Fig. 13. Package outline TO-220F (SOT186A)

WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 11 / 13

12. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.ween-semi.com.

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Limiting values — Stress above one or more limiting values (as defined in

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3Q Hi-Com Triac

Product data sheet 19 September 2018 12 / 13

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WeEn Semiconductors BTA208X-600B

3Q Hi-Com Triac

Product data sheet 19 September 2018 13 / 13

13. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Limiting values............................................................. 3

8. Thermal characteristics............................................... 6

9. Isolation characteristics...............................................6

10. Characteristics............................................................ 7

11. Package outline........................................................ 10

12. Legal information..................................................... 11

For more information, please visit: http://www.ween-semi.com

For sales office addresses, please send an email to: salesaddresses@ween-semi.com

Date of release: 19 September 2018