CDBW46-G
Page 1
QW-BA018
Small Signal Schottky Diodes
REV:C
°C
°C
°C/W
mW
mA
V
-55 to +150
-55 to +150
625
200
100
Tj
TSTG
PD
VRRM
VRWM
VR
IFRM
Junction temperature
Storage temperature
Power dissipation
Forward surge Forward current (Note 1)
Peak repetitive peak reverse voltage
Working peak reverse voltage
DC blocking voltage
Repetitive Peak Forward current (Note 1)
Parameter Conditions Symbol
Limits
Unit
PF
µA
V
12
0.25
0.45
1.0
CT
IR
VF
Diode capacitance
Reverse Voltage Leakage current
Forward voltage (Note 2)
Parameter Conditions Symbol Min Typ
Max
Unit
RΘJA
Thermal Resistance Junction to ambient air
IFSM
350
750 mA
SOD-123
Dimensions in inches and (millimeters)
Comchip Technology CO., LTD.
Reverse Voltage: 100 Volts
Forward Current: 150 mA
RoHS Device
Features
- Design for mounting on small surface.
- High breakdown voltage.
- Low trun-on voltage.
- Guard ring construction for transient protection.
mA
150
IF
Forward continuous current
@tp<1.0s, Duty Cycle<50%
@tp<10ms
IF1 = 0.1 mA
I F2 = 10mA
I F3 = 250mA
VR1 = 1.5V
VR2 = 10V
VR3 = 50V
VR4 = 75V
0.3
0.5
1
2
20
VR=1V, f = 1 MHZ
VR=0V, f = 1 MHZ
100
VR
Reverse breakdown voltage (Note 2) IR=100µA V
Notes: 1.Part mounted on FR-4 board with recommended pad layout.
2.Short duration pulse test used to minimize self-heating effect.
Mechanical data
Case: SOD-123, Molded Plastic-
Terminals: Solderable per MIL-STD-202, Method 208 -
- Approx. Weight: 0.04 gram
Comchip
S M D D i o d e S p e c i a l i s t
0.026(0.65)
0.018(0.45)
0.152(3.85)
0.140(3.55)
0.067(1.70)
0.059(1.50)
0.110(2.80)
0.102(2.60)
0.049(1.25)
0.041(1.05) 0.006(0.15)
Max.
0.02(0.50) REF
0.004(0.10)
Max.
-+
Maximum Ratings (at Ta=25°C unless otherwise noted)
Electrical Characteristics (at Ta=25°C unless otherwise noted)
+
-
Circuit diagram
21
Company reserves the right to improve product design , functions and reliability without notice.