FEATURES
*
*
*
*
Power dissipation
PCM 0.3 W(Tamb=25OC)
Collector current
ICM -0.6 A
Collector-base voltage
V(BR)CBO: -60 V
Operating and storage junction temperature range
TJ,Tstg: -55OCto+150OC
MECHANICAL DATA
* Case: Molded plastic
* Epoxy: UL 94V-O rate flame retardant
* Lead: MIL-STD-202E method 208C guaranteed
* Mounting position: Any
* Weight: 0.008 gram
SOT-23
MMBT2907A
2007-5
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
MAXIMUM RATINGES ( @ TA = 25oC unless otherwise noted )
Notes :
CHARACTERISTICS SYMBOL UNITS
417
oC/WThermal Resistance Junction to Ambient
RATINGS
Max. Steady State Power Dissipation (1) @TA=25oC Derate above 25OC
Max. Operating Temperature Range
Storage Temperature Range
SYMBOL
PD
TJ
TSTG
R qJA
VALUE
MAX.
-
TYP.
-
MIN.
UNITS
mW300
1. Alumina=0.4*0.3*0.024in.99.5% alumina
2. " Fully ROHS Compliant ", "100% Sn plating (Pb-free)".
150
-55 to +150
oC
oC
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(PNP)
Dimensions in inches and (millimeters)
0.118(3.00)
0.012(0.30)
0.020(0.50)
0.003(0.08)
0.006(0.15)
0.110(2.80)
0.019(2.00)
0.071(1.80)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
0.043(1.10)
0.035(0.90)
0.004(0.10)
0.000(0.00)
1
3
BASE
EMITTER
COLLECTOR
2
1
3
2
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
0.047(1.20)
0.055(1.40)
ELECTRICAL CHARACTERISTICS
(@TA=25OC unless otherwise noted)
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL-SIGNAL CHARACTERISTICS
SWITCHING CHARACTERISTICS
Chatacteristic
Collector-Emitter Breakdown Voltage(1) (IC= -10 mAdc, IB= 0)
Collector-Base Breakdown Voltage (IC= -10uAdc, IE= 0)
Emitter-Base Breakdown Voltage (IE= -10uAdc, IC= 0)
Collector Cutoff Current (VCE= -30Vdc, VBE(off)= -5.0Vdc)
Collector Cutoff Current (VCB= -50Vdc, IE= 0)
(VCB= -50Vdc, IE= 0, TA= 125OC)
DC Current Gain (IC= -0.1mAdc, VCE= -10Vdc)
(IC= -10mAdc, VCE= -10Vdc)
(IC= -1.0mAdc, VCE= -10Vdc)
V(BR)CEO -60 - Vdc
V(BR)CBO -60 - Vdc
V(BR)EBO -5.0 - Vdc
ICEX
ICBO
- -50
- -0.02
- -20
nAdc
Base Current (VCE= -30Vdc, VEB(off)= -0.5Vdc) IB- -50 nAdc
fT200 - MHz
hFE
75 -
-
100 -
100 -
100 300
uAdc
Symbol Min Max Unit
(IC= -150mAdc, VCE= -10Vdc)(1)
Collector-Emitter Saturation Voltage (1) (IC= -150mAdc, IB= -15mAdc)
(IC= -500mAdc, IB= -50mAdc)
(IC= -500mAdc, VCE= -10Vdc)(1)
Current-Gain-Bandwidth Product (1)(2) (IC= -50mAdc, VCE= -20Vdc, f= 100MHz)
Cobo
Cibo
- 8.0 pF
pF
tr
toff
ton
td
ts
tf
-
-
-
-
-
-
ns
ns
- 30
80
30
40
100
45
10
Output Capacitance (VCB= -10Vdc, IE= 0, f= 1.0MHz)
Input Impedance (VEB= -2.0Vdc, IC= 0, f= 1.0MHz)
(VCC= -30Vdc ,IC= -150mAdc, IB1= -15mAdc)
(VCC= -6.0Vdc, IC= -150mAdc, IB1= IB2= -15mAdc)
Vdc
VCE(sat)
50 -
- -0.4
- -1.6
Vdc
VBE(sat)
- -1.3
- -2.6
Base-Emitter Saturation Voltage (1) (IC= -150mAdc, IB= -15mAdc)
(IC= -500mAdc, IB= -50mAdc)
Rise Time
Turn-Off Time
Turn-On Time
Delay Time
Storage Time
Fall Time
NOTES : 1. Pulse Test: Pulse Width<300ms,Duty Cycle<2.0%
2. fT is defined as the frequency at which |hFE| extrapolates to unity
--
RATING AND CHARACTERISTICS CURVES ( MMBT2907A )
Figure 1. DC Current Gain
0.3
0.5
0.7
1.0
3.0
0.2
VCE= -1.0V
VCE= -10V
2.0
Figure 2. Collector Saturation Region
Figure 3. Turn - On Time Figure 4. Turn - Off Time
±0.4
±0.6
±0.8
±1.0
±0.2
0
- 100 mA - 500 mA
300
200
100
70
50
30
20
10
7.0
5.0
3.0
tr
2.0 V
td @ VBE(off)=0V
500
300
100
70
50
30
20
10
7.0
5.0
200
-0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
-0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50
-5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500 -5.0 -7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500
TJ = 125
O
C
25
O
C
-55
O
C
hFE, NORMALIZED CURRENT GAIN
VCE, COLLECTOR - EMITTERVOLTAGE (V)
t, TIME (ns)
t,TIME(ns)
IC, COLLECTOR CURRENT (mA)
IB, BASE CURRENT (mA)
I
C
= - 1.0mA - 10mA
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
VCC=-30V
IC/IB=10
TJ=25
O
C
VCC=-30V
IC/IB=10
IB1=IB2
TJ=25
O
C
tf
t's=t's-1/8tf
RATING AND CHARACTERISTICS CURVES ( MMBT2907A )
10
f = 1.0 kHz
I
C
= - 50uA
- 100 uA
- 500 uA
- 1.0mA
R
S
= OPTIMUM SOURCE RESISTANCE
8.0
6.0
4.0
2.0
0
10
8.0
6.0
4.0
2.0
0
30
2.0
-1.0
VBE(sat) @ IC/IB = 10
fT, CURRENT±GAIN Ð BANDWIDTH PRODUCT(MHz)
20
10
7.0
5.0
3.0
400
300
200
100
80
60
40
30
20
-0.8
-0.6
-0.4
-0.2
0
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
-0.1 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30
-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 500 1.0k 2.0k 5.0k 10k 20k 50k
+0.5
0
±0.5
±1.0
±1.5
±2.0
±2.5
Ceb
VCE = -20V
TJ = 25
O
C
TJ = 25
O
C
NF, NOISE FIGURE (dB)C, CAPACITANCE (pF)V, VOLTAGE (VOLTS)
COEFFICIENT (mV/ oC) NF, NOISE FIGURE (dB)
IC = - 1.0mA , R
S
=430
W
- 500 uA , R
S
=560
W
- 50 uA , R
S
=2.7k
W
- 100 uA , R
S
=1.6k
W
Ccb
VBE(on) @ VCE = -10V
RqVC for VCE(sat)
RqVB for VBE
VCE(sat) @ IC/IB = 10
Figure 5.Frequency Effects
REVERSE VOLTAGE (V) IC, COLLECTOR CURRENT (mA)
Figure 7.Capacitances Figure 8.Currunt-Gain Bandwidth Product
f, FREQUENCY (KHz) RS, SOURCE RESISTANCE (OHMS)
Figure 6.Source Resistance Effects
IC, COLLECTOR CURRENT (mA)IC, COLLECTOR CURRENT (mA)
Figure 10.Temperature CoefficientsFigure 9."On" Voltages
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