24
VTB Proc ess Photodiodes VTB1012H, 1013H
PRODUCT DESCRIPTION
Small area planar silicon photodiode in a “flat”
window, dual lead TO-46 package. Cathode is
common to the case. These diodes have very
high shunt resistance and have good blue
response.
PACKAGE DIMENSIONS inch (mm)
CASE 17 TO-46 HERMETIC
CHIP ACTIVE AREA: .0025 in
2
(1.60 mm
2
)
ABSOLUTE MA XIMUM RATINGS
Storage Temperature: -40°C to 110°C
Ope ratin g Temp erature: -40°C to 110°C
ELECTRO-OPTICAL CHARACTERISTICS @ 25°C (See also VTB curves, pag es 21-22)
SYMBOL CHARACTERISTIC TEST CONDITIONS VTB1012H VTB1013H UNITS
Min. Typ. Max. Min. Typ. Max.
ISC Short Circuit Current H = 100 fc, 2850 K 8 13 8 13 µA
TC ISC ISC Tem perature Coefficient 2850 K .12 .23 .12 . 23 %/°C
VOC Open Circuit Voltage H = 100 fc, 2850 K 490 490 mV
TC V OC VOC Temperature Coefficient 2850 K -2.0 -2.0 mV/°C
IDDark Current H = 0, VR = 2.0 V 100 20 pA
RSH Shunt Resistance H = 0, V = 10 mV .25 7. 0 GΩ
TC RSH RSH Temperature Coefficient H = O, V = 10 mV -8.0 -8.0 %/°C
CJJunction Capacitance H = 0, V = 0 .31 . 31 nF
SRSensitivity 365 nm .09 .09 A/W
λrange Spectral Applica tion Range 320 1100 320 1100 nm
λp Spectral Response - Peak 920 920 nm
VBR Breakdown Voltage 2 40 2 40 V
θ1/2 Angular Resp. - 50% Resp. Pt. ±35 ±35 Degrees
NEP Noise Equivalent Power 3.0 x 10-14 (Typ.) 5.9 x 10-15 (Typ.)
D* Specific Detectivit y 4.2 x 10 12 (Typ.) 2.1 x 10 13 (T yp.)
/ W
WHz⁄
cm Hz
PerkinElmer Optoelectronics, 22001 Dumberry, Vaudreuil, Canada J7V 8P7 Phone: 877-734-6786 Fax: 450-424-3413 www.perkinelmer.com/opto
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