IS660, IS661, IS662 IS660X, IS661X, IS662X HIGH VOLTAGE DARLINGTON OUTPUT OPTICALLY COUPLED ISOLATOR APPROVALS z UL recognised, File No. E91231 Package Code " JJ " 'X' SPECIFICATION APPROVALS z VDE 0884 in 3 available lead form : - STD - G form z High BVCEO (400V min. - IS662) (300V min. - IS661) (200V min. - IS660) APPLICATIONS z Modems z Copiers, facsimiles z Numerical control machines z Signal transmission between systems of different potentials and impedances OPTION SM OPTION G SURFACE MOUNT 7.62 10.46 9.86 1.25 0.75 6 2 5 3 4 1.2 7.62 6.62 7.62 4.0 3.0 13 Max 0.5 3.0 0.5 3.35 0.26 ABSOLUTE MAXIMUM RATINGS (25C unless otherwise specified) Storage Temperature -40C to + 125C Operating Temperature -25C to + 100C Lead Soldering Temperature (1/16 inch (1.6mm) from case for 10 secs) 260C INPUT DIODE Forward Current Reverse Voltage Power Dissipation 50mA 6V 70mW OUTPUT TRANSISTOR Collector-emitter Voltage BVCEO 200, 300, 400V Collector-base Voltage BVCBO 200, 300, 400V Emitter-baseVoltage BVECO 6V Collector Current IC 150mA Power Dissipation 300mW POWER DISSIPATION Total Power Dissipation 0.6 0.1 1 7.0 6.0 - SMD approved to CECC 00802 DESCRIPTION The IS66_ series are optically coupled isolators consisting of infrared light emitting diode and a high voltage NPN silicon photo darlington which has an integral base-emitter resistor to optimise switching speed and elevated temperature characteristics in a standard 6pin dual in line plastic package. FEATURES z Options :10mm lead spread - add G after part no. Surface mount - add SM after part no. Tape&reel - add SMT&R after part no. z High Isolation Voltage (5.3kVRMS ,7.5kVPK ) z High Current Transfer Ratio ( 1000% min) Dimensions in mm 2.54 350mW 0.26 10.16 ISOCOMCOMPONENTSLTD Unit 25B, Park View Road West, Park View Industrial Estate, Brenda Road Hartlepool, Cleveland, TS25 1UD Tel: (01429) 863609 Fax :(01429) 863581 28/11/08 DB92260 ELECTRICAL CHARACTERISTICS ( TA= 25C Unless otherwise noted ) PARAMETER Input MIN TYP MAX UNITS Forward Voltage (VF) 1.2 1.4 V IF = 10mA 10 A VR = 4V 200 300 400 V V V IC = 1mA IC = 1mA IC = 1mA 200 300 400 6 V V V V IC = 0.1mA IC = 0.1mA IC = 0.1mA IE = 0.1mA A A VCE = 200V VCE = 100V % V VRMS VPK pF kHz 1mA IF , 2V VCE 20mA IF , 100mA IC See note 1 See note 1 VIO = 500V (note 1) V = 0, f =1MHz VCE = 2V, IC= 20mA, RL = 100, RBE= open VCE = 2V, IC= 20mA, RL = 100, RBE= open Reverse Current (IR) Output Coupled Collector-emitter Breakdown (BVCEO ) IS660 IS661 IS662 Collector-base Breakdown (BVCBO ) IS660 IS661 IS662 Emitter-base Breakdown (BVEBO ) Collector-emitter Dark Current (ICEO ) IS661, IS662 IS660 Note 1 Note 2 1 1 Current Transfer Ratio (CTR) 1000 Collector-emitter Saturation VoltageVCE(SAT) Input to Output Isolation Voltage VISO 5300 7500 Input-output Isolation Resistance RISO 5x1010 Input-output Capacitance Cf Cut-off frequency fc 1 Output Rise Time Output Fall Time TEST CONDITION 4000 tr tf 1.2 1 300 100 s s Measured with input leads shorted together and output leads shorted together. Special Selections are available on request. Please consult the factory. FIGURE 1 VCC Input ton toff 100 tr Input 28/11/08 IC = 20mA Output Output tf 10% 10% 90% 90% DB92260 Collector Power Dissipation vs. Ambient Temperature Collector Current vs. Collector-emitter Voltage 10mA 140 Collector current IC (mA) Collector power dissipation PC (mW) 400 300 200 100 120 2mA 100 80 60 1mA 40 IF = 0.5mA 20 0 0 -30 0 25 50 75 100 0 125 0.4 Forward Current vs. Ambient Temperature Relative current transfer ratio Forward current IF (mA) 50 40 30 20 10 0 0 25 50 75 100 2.0 1.0 0.5 0 125 -30 0 25 50 75 Ambient temperature TA ( C ) 100 Collector Dark Current vs. Ambient Temperature Collector-emitter Saturation Voltage vs. Ambient Temperature 10-5 1.2 Collector dark current ICEO (A) Collector-emitter saturation voltage VCE(SAT) (V) 1.6 IF = 1mA VCE= 2V 1.5 Ambient temperature TA ( C ) 1.0 0.8 IF = 20mA IC = 100mA 0.6 1.2 Relative Current Transfer Ratio vs. Ambient Temperature 60 -30 0.8 Collector-emitter voltage VCE ( V ) Ambient temperature TA ( C ) 0.4 0.2 0 VCE= 200V 10-6 10-7 10-8 10-9 10-10 10-11 -30 0 25 50 75 Ambient temperature TA ( C ) 28/11/08 4mA 100 -30 0 25 50 75 Ambient temperature TA ( C ) DB92260 100