ISOCOM COMPONENTS LTD
Unit 25B, Park V iew Road West,
Park V iew Industrial Estate, Brenda Road
Hartlepool, Cleveland, TS25 1UD
Tel: (01429) 863609 Fax :(01429) 863581
28/11/08 DB92260
APPROVALS
zUL recognised, File No. E91231
Package Code " JJ "
'X' SPECIFICATION
APPROVALS
zVDE 0884 in 3 available lead form : -
- STD
- G form
- SMD approved to CECC 00802
DESCRIPTION
The IS66_ series are optically coupled isolators
consisting of infrared light emitting diode and a
high voltage NPN silicon photo darlington which
has an integral base-emitter resistor to optimise
switching speed and elevated temperature
characteristics in a standard 6pin dual in line
plastic package.
FEATURES
zOptions :-
10mm lead spread - add G after part no.
Surface mount - add SM after part no.
T ape&reel - add SMT&R after part no.
zHigh Isolation V oltage (5.3kVRMS ,7.5kVPK )
zHigh Current Transfer Ratio ( 1000% min)
zHigh BVCEO (400V min. - IS662)
(300V min. - IS661)
(200V min. - IS660)
APPLICATIONS
zModems
zCopiers, facsimiles
zNumerical control machines
zSignal transmission between systems of
different potentials and impedances
HIGH VOLTAGE DARLINGTON
OUTPUT OPTICALLY COUPLED
ISOLATOR
ABSOLUTE MAXIMUM RATINGS
(25°C unless otherwise specified)
Storage T emperature -40°C to + 125°C
Operating Temperature -25°C to + 100°C
Lead Soldering Temperature
(1/16 inch (1.6mm) from case for 10 secs) 260°C
INPUT DIODE
Forward Current 50mA
Reverse Voltage 6V
Power Dissipation 70mW
OUTPUT TRANSISTOR
Collector-emitter Voltage BVCEO 200, 300, 400V
Collector-base Voltage BVCBO 200, 300, 400V
Emitter-baseVoltage BVECO 6V
Collector Current IC150mA
Power Dissipation 300mW
POWER DISSIPATION
Total Power Dissipation 350mW
10.16
0.26
OPTION G
7.62
OPTION SM
SURFACE MOUNT
0.26
0.5
Dimensions in mm
7.0
6.0
1.2
7.62
3.0
13°
Max
3.35
4.0
3.0
2.54
7.62
6.62
0.5
1
34
6
25
10.46
9.86
0.6
0.1 1.25
0.75
IS660, IS661, IS662
IS660X, IS661X, IS662X
DB92260
PARAMETER MIN TYP MAX UNITS TEST CONDITION
Input Forward Voltage (V F) 1.2 1.4 V IF = 10mA
Reverse Current (IR)10μAV
R = 4V
Output Collector-emitter Breakdown (BVCEO )
IS660 200 V IC = 1mA
IS661 300 V IC = 1mA
IS662 400 V IC = 1mA
Collector-base Breakdown (BVCBO )
IS660 200 V IC = 0.1mA
IS661 300 V IC = 0.1mA
IS662 400 V IC = 0.1mA
Emitter-base Breakdown (BVEBO )6 V I
E = 0.1mA
Collector-emitter Dark Current (ICEO )
IS661, IS662 1 μAV
CE = 200V
IS660 1 μAV
CE = 100V
Coupled Current Transfer Ratio (CTR) 1000 4000 % 1mA IF , 2V VCE
Collector-emitter Saturation VoltageVCE(SAT) 1. 2 V 20mA IF , 100mA IC
Input to Output Isolation Voltage VISO 5300 VRMS See note 1
7500 VPK See note 1
Input-output Isolation Resistance RISO 5x1010 ΩVIO = 500V (note 1)
Input-output Capacitance Cf 1 pF V = 0, f =1MHz
Cut-off frequency fc 1 kHz VCE = 2V, I C= 20mA,
RL = 100Ω, RBE= open
Output Rise Time t r 300 μsV
CE = 2V, I C= 20mA,
Output Fall Time tf 100 μsR
L = 100Ω, RBE= open
Note 1 Measured with input leads shorted together and output leads shorted together.
Note 2 Special Selections are available on request. Please consult the factory.
28/11/08
ELECTRICAL CHARACTERISTICS ( TA= 25°C Unless otherwise noted )
Input
Output 10%
90%
10%
90%
toff
tr
ton
tf
Output
VCC
IC = 20mA
Input
FIGURE 1
100Ω
DB92260
28/11/08
0
0.5
1.0
Relative current transfer ratio
Relative Current Transfer Ratio
vs. Ambient Temperature
0 0.4 0.8 1.2 1.6 2.0
40
60
Collector-emitter voltage VCE ( V )
20
0
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector Current vs. Collector-emitter
Voltage
1.5
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector dark current ICEO (A)
Collector Dark Current vs.
Ambient Temperature
VCE= 200V
-30 0 25 50 75 100 125
Ambient temperature TA ( °C )
200
0
Ambient temperature TA ( °C )
Collector power dissipation PC (mW)
60
30
20
10
0
40
50
-30 0 25 50 75 100 125
Collector Power Dissipation vs. Ambient Temperature
Forward Current vs. Ambient Temperature
100
Forward current IF (mA)
-30 0 25 50 75 100
Ambient temperature TA ( °C )
Collector-emitter saturation voltage VCE(SAT) (V)
Collector-emitter Saturation
Voltage vs. Ambient Temperature
0
0.2
0.4
0.6
0.8
1.0
1.2
IF = 20mA
IC = 100mA
80
100
120
140
Collector current IC (mA)
IF = 0.5mA
1mA
2mA
4mA 10mA
IF = 1mA
VCE= 2V
10-11
10-10
10-9
10-8
10-7
10-6
10-5
300
400