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TGA2503
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January 2013 © Rev A
13 - 17 GHz 2 Watt, 32dB Power Amplifier
Key Features and Performance
•33 dBm Midband Pout
•32 dB Nominal Gain
•10 dB Typical Return Loss
•Built-in Directional Power Detector
with Reference
•0. 50 µm pHEMT Technology
•Bias Conditions: 7 V, 680mA
•Chip dimensions: 2.5 x 1.4 x 0.1 mm
(98 x 55 x 4 mils)
Preliminary Measured Data
Bias Conditions: Vd=7 V Id= 680mA Primary Applications
•VSAT
•Point-to-Point
Note: Datasheet is subject to change without notice.
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Symbol Parameter Value Notes
Vd-Vg Drain to Gate Voltage 13 V
Vd Drain Voltage 8 V 2/
Vg Gate Voltage Range -5 to 0 V
Id Drain Current 1300 mA 2/
Ig Gate Current Range -18 to 18 mA
Pin Input Continuous Wave Power 21 dBm 2/
Tchannel Channel Temperature 200 °C
Table I
Absolute Maximum Ratings 1/
1/ These ratings represent the maximum operable values for this device. Stresses beyond those listed
under “Absolute Maximum Ratings” may cause permanent damage to the device and/or affect device
lifetime. These are stress ratings only, and functional operation of the device at these conditions is
not implied.
2/ Combinations of supply voltage, supply current, input power, and output power shall not exceed the
maximum power dissipation listed in Table IV.
Symbol Parameter Value
Vd Drain Voltage 7 V
Idq Drain Current 680 mA
Id_Drive Drain Current under RF Drive 1200 mA
Vg Gate Voltage -0.6 V
Table II
Recommended Operating Conditions
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January 2013 © Rev A
TABLE III
RF CHARACTERIZATION TABLE
(T
A
= 25 °C, Nominal)
(Vd = 7 V, Id = 680 mA ±5%)
LIMITS
SYMBOL PARAMETER TEST
CONDITION MIN TYP MAX
UNITS
Gain
Small Signal Gain
F = 13-17 32 dB
IRL
Input Return Loss
F = 13-17 10 dB
ORL
Output Return Loss
F = 13-17 10 dB
PWR
Output Power @
Pin = +5 dBm
F = 13-17 33 dBm
Note: Table III Lists the RF Characteristics of typical devices as determined by
fixtured measurements.
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January 2013 © Rev A
Table IV
Power Dissipation and Thermal Properties
Parameter Test Conditions Value
Maximum Power Dissipation Tbaseplate = 70 °C Pd = 9.2 W
Tchannel = 200 °C
Thermal Resistance, θJC Vd = 7 V
Id = 680 mA
Pd = 4.76 W
Tbaseplate = 70 °C
θJC = 14.2 °C/W
Tchannel = 138 °C
Tm = 2.9E+6 Hrs
Thermal Resistance, θJC
Under RF Drive
Vd = 7 V
Id = 1200 mA
Pout = 33 dBm
Pd = 6.4 W
Tbaseplate = 70 °C
θJC = 14.2 °C/W
Tchannel = 161 °C
Tm = 4.1E+5 Hrs
Mounting Temperature 30 Seconds 320 °C
Storage Temperature -65 to 150 °C
Median Lifetime (Tm) vs. Channel Temperature
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January 2013 © Rev A
Typical Fixtured Performance
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January 2013 © Rev A
Typical Fixtured Performance
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TGA2503
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January 2013 © Rev A
Typical Fixtured Performance
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TGA2503
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January 2013 © Rev A
Typical Fixtured Performance
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TGA2503
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January 2013 © Rev A
Mechanical Drawing
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January 2013 © Rev A
Power Detector
40 K
Ω
40 K
Ω
+5 V
Vdet
Vref
50
Ω
RF out
DUT
5pF
MMIC
External
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Chip Assembly & Bonding Diagram
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
100
pF
Vg
Input TFN
Output TFN
100 pF
Vd
Off chip
R=10 Ω
Off chip
C=0.1 μF
Off chip
R=10 Ω
Off chip
C=0.1 μF
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TGA2503
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January 2013 © Rev A
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Assembly Process Notes
Reflow process assembly notes:
• Use AuSn (80/20) solder with limited exposure to temperatures at or above 300 °C.
(30 seconds maximum)
• An alloy station or conveyor furnace with reducing atmosphere should be used.
• No fluxes should be utilized.
• Coefficient of thermal expansion matching is critical for long-term reliability.
• Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
• Vacuum pencils and/or vacuum collets are the preferred method of pick up.
• Air bridges must be avoided during placement.
• The force impact is critical during auto placement.
• Organic attachment can be used in low-power applications.
• Curing should be done in a convection oven; proper exhaust is a safety concern.
• Microwave or radiant curing should not be used because of differential heating.
• Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
• Thermosonic ball bonding is the preferred interconnect technique.
• Force, time, and ultrasonics are critical parameters.
• Aluminum wire should not be used.
• Discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire.
• Maximum stage temperature is 200 °C.
Ordering Information
Part Package Style
TGA2503 GaAs MMIC Die
