FMMT560
Document Number: DS33102 Rev. 7 - 2
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FMMT560
500V PNP HIGH VOLTAGE TRANSISTOR IN SOT23
Features
BVCEO > -500V
IC = -150mA high Continuous Collector Current
ICM Up to -500mA Peak Pulse Current
Excellent hFE Characteristics up to IC = -100mA
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
An Automotive Compliant Part is Available Under Separate
Datasheet (FMMT560Q)
Ordering Information (Note 4)
Product
Compliance
Marking
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
FMMT560TA
AEC-Q101
560
7
8
3,000
FMMT560TC
AEC-Q101
560
13
8
10,000
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
560 = Product Type Marking Code
C
E
B
Top View
SOT23
Device Symbol
Top View
Pin-Out
560
FMMT560
Document Number: DS33102 Rev. 7 - 2
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© Diodes Incorporated
FMMT560
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Collector-Base Voltage
VCBO
-500
V
Collector-Emitter Voltage
VCEO
-500
V
Emitter-Base Voltage
VEBO
-7
V
Continuous Collector Current
IC
-150
mA
Peak Pulse Current
ICM
-500
mA
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
Power Dissipation
(Note 5)
PD
500
mW
Thermal Resistance, Junction to Ambient
(Note 5)
RθJA
250
°C/W
Thermal Resistance, Junction to Lead
(Note 6)
RθJL
194
°C/W
Operating and Storage Temperature Range
TJ, TSTG
-55 to +150
°C
ESD Ratings (Note 7)
Characteristic
Symbol
Value
Unit
JEDEC Class
Electrostatic Discharge Human Body Model
ESD HBM
4,000
V
3A
Electrostatic Discharge Machine Model
ESD MM
400
V
C
Notes: 5. For a device mounted with the collector lead on 15mm x 15mm 1oz copper that is on a single-sided FR4 PCB; device is measured under still air
conditions whilst operating in a steady-state.
6. Thermal resistance from junction to solder-point (at the end of the collector lead).
7. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
FMMT560
Document Number: DS33102 Rev. 7 - 2
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FMMT560
Thermal Characteristics and Derating Information
110 100
1m
10m
100m
1
15 x 15mm FR4
1oz Copper
VCE(sat)
Limit
100µs
1ms
10ms
100ms
1s
DC
Safe Operating Area
-IC Collector Current (A)
-VCE Collector-Emitter Voltage (V) 020 40 60 80 100 120 140 160
0.0
0.1
0.2
0.3
0.4
0.5
0.6 15 x 15mm FR4 1oz Copper
Derating Curve
Temperature (°C)
Max Power Dissipation (W)
100µ 1m 10m 100m 110 100 1k
0
40
80
120
160
200
240 15 x 15mm FR4 1oz Copper
Transient Thermal Impedance
D=0.5
D=0.2
D=0.1
Single Pulse
D=0.05
Thermal Resistance (°C/W)
Pulse Width (s) 100µ 1m 10m 100m 110 100 1k
0.1
1
10
100 15 x 15mm FR4 1oz Copper
Pulse Power Dissipation
Pulse Width (s)
Max Power Dissipation (W)
FMMT560
Document Number: DS33102 Rev. 7 - 2
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FMMT560
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Min
Typ
Max
Unit
Test Condition
Collector-Base Breakdown Voltage
BVCBO
-500
V
IC = -100µA
Collector-Emitter Breakdown Voltage (Note 8)
BVCEO
-500
V
IC = -1mA
Emitter-Base Breakdown Voltage
BVEBO
-7
V
IE = -100µA
Collector Cutoff Current
ICBO
-100
nA
VCB = -500V
Emitter Cutoff Current
IEBO
-100
nA
VEB = -5V
Static Forward Current Transfer Ratio (Note 8)
hFE
100
80
15
300
300
IC = -1mA, VCE = -10V
IC = -50mA, VCE = -10V
IC = -100mA, VCE = -10V
Collector-Emitter Saturation Voltage (Note 8)
VCE(SAT)
-200
-500
mV
IC = - 20mA, IB = -2mA
IC = - 50mA, IB = -10mA
Base-Emitter Saturation Voltage (Note 8)
VBE(SAT)
-0.9
V
IC = -50mA, IB = -10mA
Base-Emitter Turn-On Voltage (Note 8)
VBE(ON)
-0.9
V
IC = -50mA, VCE = -10V
Output Capacitance
COBO
8
pF
VCB = -20V, f = 1MHz
Transition Frequency
fT
60
MHz
VCE = -20V, IC = -10mA,
f = 50MHz
Turn-On Time
tON
110
ns
VCE = -100V, IC = -50mA,
IB1 = -5mA, IB2 = 10mA
Turn-Off Time
tOFF
1.5
µs
Note: 8. Measured under pulsed conditions. Pulse width 300µs. Duty cycle ≤ 2%
FMMT560
Document Number: DS33102 Rev. 7 - 2
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FMMT560
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
FMMT560
Document Number: DS33102 Rev. 7 - 2
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FMMT560
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
SOT23
Dim
Min
Max
Typ
A
0.37
0.51
0.40
B
1.20
1.40
1.30
C
2.30
2.50
2.40
D
0.89
1.03
0.915
F
0.45
0.60
0.535
G
1.78
2.05
1.83
H
2.80
3.00
2.90
J
0.013
0.10
0.05
K
0.890
1.00
0.975
K1
0.903
1.10
1.025
L
0.45
0.61
0.55
L1
0.25
0.55
0.40
M
0.085
0.150
0.110
a
All Dimensions in mm
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT23
Dimensions
Value (in mm)
C
2.0
X
0.8
X1
1.35
Y
0.9
Y1
2.9
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between
device Terminals and PCB tracking.
J
K1 K
L1
GAUGE PLANE
0.25
H
L
M
All 7°
A
CB
D
G
F
a
X
Y
Y1 C
X1
FMMT560
Document Number: DS33102 Rev. 7 - 2
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January 2016
© Diodes Incorporated
FMMT560
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
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