Silicon Controlled Rectifier TO-209AB (1093) Notes: 1. 3/4-16 UNF-3A 2. Full thread within 2 1/2 threads 3. For insulated cathode lead, add suffix IL to catalog number Dim. Inches Millimeter Minimum Maximum Minimum Maximum Notes SxCHAMADAVSZAEZACITIOAMIMIOO> >N <x< > --- --- --- --- 1 1.237 1.243 31.42 31.57 1.350 1.360 34.29 54.54 7.428 7.671 188.67 194.84 7.382 8.100 187.50 205.74 1.047 1.077 26.59 27.56 365 385 9.27 9.78 --- 1.385 --- 35.13 -660 749 16.76 19.02 2 338 348 8.59 8.84 Dia. 625 687 15.88 17.45 -140 -150 3.56 3.81 --- 295 --- 7.49 --- 1.125 --- 28.56 Dia. 295 305 7.49 7.75 --- 2.950 --- 64.77 -620 -630 15.75 16.00 276 286 7.01 7.26 Dia. 065 075 1.65 1.91 Dia. 245 299 6.22 6.48 243 --- 6.17 --- 770 -790 19.56 20.07 -120 -130 3.05 3.30 & Reverse Transient catalog Number epetitve Blsecing Eick 150C608 600 700 150C80B 800 900 150C100B 1000 1100 150C120B 1200 1300 Add suffix "F for flag lead To specify dv/dt higher than 200V/usec., contact factory. e High dv/dt200 V/usec. @ 3000 Amperes surge current capability Low forward on-state voltage Primarily for line commutated converters Economical for general purpose phase control applications Electrical Characteristics Max. RMS on-state current | T(RMS) Max. average on-state cur. yiav) Max. peak on-state voltage Max. holding current 1 Max. peak one cycle surge current | TSM Max. [2t capability for fusing 124 235 Amps 150 Amps 1.6 Volts 200 mA 3000A 37,000A2S Tc = 73C Te = 73C !TM = 500 A(peak) Tc = 73C, 60Hz t = 8.35 ms Thermal and Mechanical Characteristics Operating junction temp range TJ Storage temperature range TSTG Maximum thermal resistance ReJC Typical thermal resistance (greased) Recs Mounting torque Weight 65C to 125C 65C to 150C 0.20C/W Junction to case 0.40C/W Case to sink 250-300 inch pounds 7.4 ounces (211.1 grams) typical COLORADO 800 Hoyt Street Z Broomfield, CO. 80020 icrosemi x62 FAX: (303) 466-3775 www.microsemi.com 10-6-00 Rev. 1TOOC Switching Critical rate of rise of on-state current (note 1) di/dt 100A /usec. TJ = 125C Typical delay time (note 1) td 3.0 usec. 3 Typical circuit commuted turn-off time (note 2) tq 100 usec. TJ = 125C Note 1: 'TM = 100A D =VDRM, YGT = 12V open circuit, 20 ohm0.1 usec rise time Note 2: 'TM = 100A, di/dt = 5A/usec,V R during turn-off internal = 50V min, reapplied dv/dt = 20V/usec., linear to rated VDRM, VGT = OV Triggering Max. gate voltage to trigger VeT 3.0V Ty = 25C Max. nontriggering gate voltage Vep 0.25V TW = 125C Max. gate current to trigger | GT 150mA TJ = 25C Max. peak gate power PGM 10W Average gate power PG(AV) 2.0W tp = 10 usec. Max. peak gate current | GM 2.0A Max. peak gate voltage (forward) VoM 10V Max. peak gate voltage (reverse) VoM 5.0V Blocking Max. leakage current IDRM 20mA Ty =125C &V DRM Max. reverse leakage IRRM 20mA Wy =125C &V RRM Critical rate of rise of offstate voltage dv/dt 200V/usec. Ty =125C 10-6-00 Rev. 1TOOC Figure 1 Typical Forward OnState Characteristics 1 8000 6000 1000 800 600 400 200 100 80 60 40 20 Instantaneous OnState Current Amperes 10 6 8 10 1.2 14 1.6 18 2.0 Instantaneous OnState Voltage Volts Figure 2 Forward Current Derating & 130 120 wa SSN | 2 2 2 110 SSH - SQ & 100 RS oO NINN. 2 90 SX N\ S N = 80 NX 5 70 3 6 3011 _acrjoay 11207] __| 180" 0 30 60 90 120 150 Average OnState Current Amperes Junction to Case Peak OnState Current Amperes Figure 3 Maximum Power Dissipation t N WwW w a So a o 6 6 N oO oO = QoQ oO a Oo Maximum Power Dissipation Watts a So 0 ) 809 607 30 JS L f Ne p/| 207 MV QZz a 0 20 40 60 Figure 4 Transient Thermal Impedance 39 30 29 .20 A5 0.1 05 Thermal Impedance C/Watts Figure 0 -001 .01 80 100 120 140 160 180 200 Average OnState Current Amperes i" Lt) Time in Seconds 5 0.1 1.0 Maximum Nonrepetitive Surge Current 3500 3000 2500 2000 1500 1000 500 0 10 100 1 Number of Cycles 10 10-6-00 Rev. 1 100