7MBP75SD-060 - Fuji Electric

IPM-R3 series 600V / 75A 7 in one-package

7MBP75RTB060

Features

· T emperature protection provided by directly detecting the junction

temperature of the IGBTs

· Low power loss and soft switching

· High performance and high reliability IGBT with overheating protection

· Higher reliability because of a big decrease in number of parts in

built-in control circuit

Maximum ratings and characteristics

Absolute maximum ratings(at Tc=25°C unless otherwise specified)

Symbol Rating Unit

Min. Max.

Bus voltage

(between terminal P and N)

Collector-Emitter voltage

Collector current DC

1ms

Duty=75.0%

Collector power dissipation One transistor

Collector current DC

1ms

Forward Current of Diode

Collector power dissipation One transistor

Input voltage of power supply for Pre-Driver

Input signal voltage

Input signal current

Alarm signal voltage

Alarm signal current

Junction temperature

Operating case temperature

Storage temperature

Isolating voltage (Case-Terminal)

Screw torque Mounting (M5)

Terminal (M5)

VDC

VDC(surge)

VSC

VCES *1

IC

ICP

-IC *2

PC *3

IC

ICP

IF

PC *3

VCC *4

Vin *5

Iin

VALM *6

IALM *7

Tj

Top

Tstg

Viso *8

Item

0

200

0

-

-0.5

-

-0.5

-

-20

-40

-

450

500

400

600

75

150

75

198

50

100

50

198

20

Vcc+0.5

3

Vcc

20

150

100

125

AC2.5

3.5 * 9

V

A

W

A

W

V

mA

V

mA

°C

kV

N·m

Note

*1 : Vces shall be applied to the input voltage between terminal P and U or V or W or DB,

N and U or V or W or DB.

*2 : 125 °C/FWD Rth(j-c)/(Ic x VF MAX)=125/0.855/(75 x 2.6)x100=75.0%

*3 : Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Inverter]

Pc=125°C/IGBT Rth(j-c)=125/0.63=198W [Break]

*4 : Vcc shall be applied to the input voltage between terminal No. 3 and 1, 6 and 4, 9 and 7, 11 and 10.

*5 : Vin shall be applied to the input voltage between terminal No. 2 and 1, 5 and 4, 8 and 7, 12,13,14,15 and 10.

*6 : VALM shall be spplied to the voltage between terminal No. 16 and 10.

*7 : IALM shall be applied to the input current to terminal No. 16.

*8 : 50Hz/60Hz sine wave 1 minute.

*9 : Recommendable Value : 2.5 to 3.0 N·m

Fig.1 Measurement of case temperature

DC

Surge

Shortoperating

Item Symbol Min. Typ. Max. Unit

Weight

Weight Wt - 450 - g

*9 : (For 1 device, Case is under the device)

Inverter

Brake

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7MBP75RTB060 IGBT-IPM

Control circuit

Item Symbol Condition Min. Typ. Max. Unit

Supply current of P-line side pre-driver(one unit)

Supply current of N-line side pre-driver

Input signal threshold voltage (on/off)

Input zener voltage

Alarm signal hold time

Limiting resistor for alarm

Switching Trequency : 0 to 15kHz

Tc=-20 to 125°C Fig.7

ON

OFF

Rin=20k ohm

Tc=-20°C Fig.2

Tc=25°C Fig.2

Tc=125°C Fig.2

Iccp

ICCN

Vin(th)

VZ

tALM

RALM

-

1.00

1.25

-

1.1

-

1425

-

1.35

1.60

8.0

-

2.0

-

1500

18

65

1.70

1.95

-

4.0

1575

mA

V

ms

ohm

Protection Section ( Vcc=15V)

Turn-on time

Turn-off time

Reverse recovery time

Maximum Avalanche Energy

(A non-repetition)

ton VDC=300V,Tj=125°C

toff IC=75A Fig.1, Fig.6

trr VDC=300V, IC=75A Fig.1, Fig.6

PAV Internal wiring inductance=50nH

Main circuit wiring inductace=54nH

Thermal characteristics( Tc=25°C)

Item Symbol Min. Typ. Max. Unit

Junction to Case thermal resistance

Case to fin thermal resistance with compound

Rth(j-c)

Rth(c-f)

- - 0.63

- - 0.855

- - 0.63

- 0.05 -

°C/W

INV IGBT

FWD

Brake IGBT

Item Symbol Min. Typ. Max. Unit

DC Bus Voltage

Operating Supply Voltage of Pre-Driver

Screw torque (M5)

VDC

VCC

-

Recommendable value

Over Current Protection Level of Inverter circuit

Over Current Protection Level of brake circuit

Over Current Protection Delay time

SC Protection Delay time

IGBT Chip Over Heating

Over Heating Protection Hysteresis

Over Heating Protection Temperature Level

Over Heating Protection Hysteresis

Under Voltage Protection Level

Under Voltage Protection Hysteresis

Electrical characteristics (at Tc=Tj=25°C, Vcc=15V unless otherwise specified.)

Main circuit

Item Symbol Condition Min. Typ. Max. Unit

Collector current at off signal input

Collector-Emitter saturation voltage

Forward voltage of FWD

ICES

VCE(sat)

VF

ICES

VCE(sat)

VF

VCE=600V Vin terminal open.

Ic=75A

VCE=600V Vin terminal open.

Ic=50A

-Ic=50A

- - 1.0 mA

- - 2.4 V

- 2.0 -

- - 2.6 V

- 1.6 -

- - 1.0 mA

- - 2.2 V

- 1.75 -

- - 3.3 V

- 1.9 - V

1.2 - - µs

- - 3.6

- - 0.3

40 - - mJ

Terminal

Chip

Terminal

Chip

Terminal

Chip

Terminal

Chip

IOC

tDOC

tSC

TjOH

TjH

TCOH

TCH

VUV

VH

Tj=125°C

Tj=125°C Fig.4

surface of IGBT chips

VDC=0V, Ic=0A, Case temperature

113 - - A

75 - -

- 5 -

- - 8

150 - -

- 20 -

110 - 1 25

- 20 -

1 1.0 - 12.5

0.2 0.5 -

A

µs

°C

V

Noise Immunity ( VDC=300V, Vcc=15V, Test Circuit Fig.5)

Common mode rectangular noise

Common mode lightning surge

Pulse width 1µs, polarity ±,10minuets

Judge : no over-current, no miss operating

Rise time 1.2µs, Fall time 50µs

Interval 20s, 10 times

Judge : no over-current, no miss operating

±2.0 - -

±5.0 - -

Item Symbol Condition Min. Typ. Max. Unit

Item Condition Min. Typ. Max. Unit

kV

- - 400 V

13.5 1 5. 0 16.5 V

2.5 - 3.0 Nm

Collector current at off signal input

Collector-Emitter saturation voltage

Forward voltage of Diode

Inverter

Brake

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7MBP75RTB060 IGBT-IPM

Vin

Ic

Vin(th) Vin(th)

ton toff

trr

on

90%

50%

90% 10%

Figure 1. Switching Time Waveform Definitions

/Vin

Vge (Inside IPM)

Fault (Inside IPM)

/ALM

on on

off off

Gate on Gate off

normal

alarm

tALM>Max. tALM>Max. tALM 2ms(typ.)

Fault : Over-current, Over-heat or Under-voltage

Figure 2. Input / Output Timing Diagram

Ic

IALM IALM IALM

Ic Ic

tsc

Figure. 4 Definition of tsc

DC

15V

DC

15V

VccU

VinU

GNDU

20k

Vcc

VinX

GND

P

U

V

W

N

CT

AC200V

Noise

4700p

Cooling

Fin

Earth

+

Sw1

Sw2

Figure 5. Noise Test Circuit

Vcc

20k

Vin

GND

P

IPM L DC

300V

Ic

N

+

DC

15V

HCPL-

4504

Icc Vcc P

I PM U

DC Vin

15V V

P.G W

+8V f sw G ND

N

Figure 6. Switching Characteristics Test Circuit

Figure 7. Icc Test Circuit

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7MBP75RTB060 IGBT-IPM

Block diagram

Outline drawings, mm

Mass : 450g

VccU 3

VinU 2

GNDU 1

VccV 6

VinV 5

GNDV 4

VccW 9

VinW 8

GNDW 7

Vcc 11

VinX 13

GND 10

VinY 14

VinZ 15

12

ALM 16

P

U

V

W

B

NPre-driver include follow ing f unctions

1 Amplifier for drive

2 Short circuit protection

3 Under voltage lockout circuit

4 O ver current prote ction

5 IGBT chip over heating protection

Pre-Driver

i rrrPPPrrreee---DDDrrrivvveee

Pre-Driver

RALM

1.5kΩ

Over heating protection

circuit

Pre-Driver

VinDB

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IGBT-IPM

Characteristics

Control circuit characteristics (Respresentative)

7MBP75RTB060

Power supply current vs. Switching frequency

0 5 10 15 20 25

Switching frequency fsw (kHz)

12 13 14 15 16 17 18

Power supply voltage Vcc (V)

Power supply current Icc (mA)

Input signal threshold voltage

Vin ( ON), Vin ( OFF), (V)

Input signal threshold voltage

vs. Power supply voltage

14

12

10

8

6

4

2

0

Under voltage V UVT (V)

Under voltage vs. Junction temperature

Undervoltage hysterisis V H (V)

Under voltage hysterisis vs. Junction temperature

Alarm hold time t ALM (msec.)

Alarm hold time vs. Power supply voltage

Overheating protection T COH,T jOH (°C)

OH hysterisis T CH,T jH (°C)

Overheating characteristics TCOH,TjOH,TCH,TjH vs. VCC

Tc=125°C

20 40 60 80 100 120 140

Junction temperature Tj (°C)

12 13 14 15 16 17 18

Power supply voltage Vcc (V)

N-side

········· P-side

60

50

40

30

20

10

0

Tj=25°C

Tj=125°C

2.5

2.0

1.5

1.0

0.5

0

1.0

0.8

0.6

0.4

0.2

0

3.0

2.5

2.0

1.5

1.0

0.5

0

200

150

100

50

0

·········

20 40 60 80 100 120 140

Junction temperature Tj (°C)

12 13 14 15 16 17 18

Power supply voltage Vcc (V)

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7MBP75RTB060 IGBT-IPM

Main circuit characteristics (Respresentative)

Collector current vs. Collector-Emitter voltage

Collector current Ic (A)

Collector current vs. Collector-Emitter voltage

Collector current Ic (A)

Forward current vs. Forward voltage

(Chip)

Forward current I F (A)

0 0.5 1 1.5 2 2.5

Foeward voltage VF (V)

150

100

50

0

Tj=25°C(Chip)

80

70

60

50

40

30

20

10

0

Tj=25°C(Terminal)

Collector current vs. Collector-Emitter voltage

Collector current Ic (A)

Tj=125°C(Chip)

Collector current vs. Collector-Emitter voltage

Collector current Ic (A)

Tj=125°C(Terminal)

Forward current vs. Forward voltage

(Terminal)

Forward current I F (A)

80

70

60

50

40

30

20

10

0

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage VCE (V)

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage VCE (V)

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage VCE (V)

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage VCE (V)

80

70

60

50

40

30

20

10

0

80

70

60

50

40

30

20

10

0

150

100

50

0 0 0.5 1 1.5 2 2.5

Foeward voltage V F (V)

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7MBP75RTB060 IGBT-IPM

Transient thermal resistance

0.001 0.01 0.1 1

Pulse width Pw (sec.)

1

0.1

0.01

Thermal resistance Rth(j-c) (°C/W)

Reverse biased safe operating area

Collector current Ic (A)

0 20 40 60 80 100 120 140 160

Case temperature Tc ( °C)

Collector power dissipation Pc (W)

Power derating for FWD (per device)

Collector power dissipation Pc (W)

0 100 200 300 400 500 600 700

Collector-Emitter voltage VCE (V)

300

250

200

150

100

50

0

<=

Vcc=15V, Tj 125°C

Power derating for IGBT (per device)

Switching loss Eon,Eoff, Err (mJ/cycle)

6

5

4

3

2

1

00 20 40 60 80

Collector current IC (A)

Switching Loss vs. Collector current

Edc=300V, Vcc=15V, Tj=25°C

Switching loss Eon,Eoff, Err (mJ/cycle)

Switching Loss vs. Collector current

Edc=300V, Vcc=15V, Tj=125°C

0 20 40 60 80

Collector current IC (A)

200

150

100

50

0 0 20 40 60 80 100 120 140 160

Case temperature Tc (°C)

6

5

4

3

2

1

0

250

200

150

100

50

0

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7MBP75RTB060 IGBT-IPM

20 40 60 80 100 120

Collector current Ic (A)

Switching time ton,toff,tf ( nsec.)

10000

1000

100

10

Switching time vs. Collector current

Edc=300V, Vcc=15V, Tj=25°C

Reverse recovery current Irr (A)

Reverse recovery time trr (nsec.)

Reverse recovery characteristics

trr, Irr, vs. IF

100

10

120 40 60 80 100 120

Foeward current IF (A)

Switching time ton,toff,tf ( nsec.)

10000

1000

100

10

Switching time vs. Collector current

Edc=300V, Vcc=15V, Tj=125°C

20 40 60 80 100 120

Collector current Ic (A)

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7MBP75RTB060 IGBT-IPM

Dynamic brake characteristics (Respresentative)

Collector current vs. Collector-Emitter voltage

Tj=25°C (Terminal)

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage VCE (V)

Collector current Ic (A)

80

60

40

20

0

Collector current vs. Collector-Emitter voltage

Tj=125°C (Terminal)

Collector current Ic (A)

0 0.5 1 1.5 2 2.5 3

Collector-Emitter voltage VCE (V)

Transient thermal resistance Reverse biased safe operating area

1

0.1

0.01

Thermal resistance Rth(j-c) (°C/W)

<=

Vcc=15V, Tj 125°C

Collector current Ic (A)

0 100 200 300 400 500 600 700

Collector-Emitter voltage VCE (V)

200

150

100

50

0

0 20 40 60 80 100 120 140 160

Case temperature Tc (°C)

250

200

1 50

100

50

0

Collector power dissipation Pc (W)

Power derating for IGBT (per device)

80

60

40

20

0

0.001 0.01 0.1 1

Pulse width Pw (sec.)

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