MICROCIRCUIT DATA SHEET Original Creation Date: 06/28/95 Last Update Date: 11/12/98 Last Major Revision Date: 08/14/98 MNLM111-X REV 0A0 VOLTAGE COMPARATOR General Description The LM111 is a voltage comparator that has input currents nearly a thousand times lower than devices such as the LM106 or LM710. It is also designed to operate over a wider range of supply voltages; from standard + 15V op amp supplies down to the single 5V supply used for IC logic. The output is compatible with RTL, DTL and TTL as well as MOS circuits. Further, it can drive lamp or relay switching voltages up to 50V at currents as high as 50 mA. Both the inputs and the output of the LM111 can be isolated from system ground, and the output can drive loads referred to ground, the positive supply or the negative supply. Offset balancing and strobe capability are provided, and outputs can be wire OR'ed. Although slower than the LM106 and LM710 (200 ns response time vs 40 ns) the device is also much less prone to spurious oscillations. The LM111 has the same pin configuration as LM106 and LM710. Industry Part Number NS Part Numbers LM111 LM111 LM111E/883 LM111H/883 LM111J-8/883 LM111J/883 LM111W/883 LM111WG/883 Processing Subgrp Description Prime Die MIL-STD-883, Method 5004 1 2 3 4 5 6 7 8A 8B 9 10 11 Quality Conformance Inspection MIL-STD-883, Method 5005 1 Static tests at Static tests at Static tests at Dynamic tests at Dynamic tests at Dynamic tests at Functional tests at Functional tests at Functional tests at Switching tests at Switching tests at Switching tests at Temp ( oC) +25 +125 -55 +25 +125 -55 +25 +125 -55 +25 +125 -55 MICROCIRCUIT DATA SHEET MNLM111-X REV 0A0 Features - Operates from single 5V supply Input current: 150 nA max. over temperature Offset current: 20 nA max. over temperature Differential input voltage range: +30V Power consumption: 135 mW at +15V 2 MICROCIRCUIT DATA SHEET MNLM111-X REV 0A0 (Absolute Maximum Ratings) (Note 1) Total Supply Voltage 36V Output to Negative Supply Voltage 50V Ground to Negative Supply Voltage 30V Differential Input Voltage + 30V Input Voltage (Note 3) + 15V Power Dissipation (Note 2) 500mW Output Short Circuit Duration 10 Sec Operating Temperature Range -55 C to +125 C Thermal Resistance ThetaJA Metal Can Pkg (Still Air @ 0.5W) (500LF/Min Air flow @ 0.5W) 162 C/W 92 C/W CERDIP (8-LEAD) (Still Air @ 0.5W) (500LF/Min Air flow @ 0.5W) 134 C/W 76 C/W CERDIP (14-LEAD) (Still Air @ 0.5W) (500LF/Min Air flow @ 0.5W) 97 C/W 65 C/W CERPACK (10-Lead) (Still Air @ 0.5W) (500LF/Min Air flow @ 0.5W) 231 C/W 153 C/W LCC (20-Lead) (Still Air @ 0.5W) (500LF/Min Air flow @ 0.5W) 90 C/W 65 C/W CERAMIC SOIC (10-Lead) (Still Air @ 0.5W) (500LF/Min Air flow @ 0.5W) 231 C/W 153 C/W ThetaJC Metal Can Pkg CERDIP ( 8-Lead) CERDIP (14-Lead) CERPACK (10-Lead) LCC (20-Lead) CERAMIC SOIC (10-Lead) Storage Temperature Range 50 21 20 24 21 24 C/W C/W C/W C/W C/W C/W -65 C to 150 C Lead Temperature (Soldering, 10 seconds) Voltage at Strobe Pin 260 C V+ -5V ESD Rating (Note 4) 300V 3 MICROCIRCUIT DATA SHEET MNLM111-X REV 0A0 (Absolute Maximum Ratings) (Continued) (Note 1) Package Weight (Typical) Metal Can Pkg CERDIP ( 8-Lead) CERDIP (14-Lead) CERPACK (10-Lead) CERAMIC SOIC Note 1: Note 2: Note 3: Note 4: TBD TBD TBD TBD 220mg Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. The maximum power dissipation must be derated at elevated temperatures and is dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (Tjmax - TA)/ThetaJA or the number given in the Absolute Maximum Ratings, whichever is lower. This rating applies for +15V supplies. The positive input voltage limit is 30V above the negative supply. The negative input voltage limit is equal to the negative supply voltage or 30V below the positive supply, whichever is less. Human body model, 1.5K Ohms in series with 100pF. 4 MICROCIRCUIT DATA SHEET MNLM111-X REV 0A0 Electrical Characteristics DC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) DC: V56=0, Rs=0 Ohm, +Vcc=+15V, Vcm=0, Vout=1.4V WRT -Vcc SYMBOL Iio PARAMETER Input Offset Current CONDITIONS NOTES Vcm=13.5V, Rs=50K Ohms Input Bias Current Ilg Vsat Icc- Icc+ Il1 Il2 Ground Leakage Current Saturation Voltage -20 20 nA 2, 3 Vcm=13.5V, V85=V86=0V, Rs=50K Ohms -30 30 nA 1 Vcm=-14.5V, Rs=50K Ohms -10 10 nA 1 -20 20 nA 2, 3 Vcm=-14.5V, V85=V86=0V, Rs=50K Ohms -30 30 nA 1 Rs=50K Ohms -10 10 nA 1 -20 20 nA 2, 3 -30 30 nA 1 100 nA 1 150 nA 2, 3 100 nA 1 150 nA 2, 3 100 nA 1 150 nA 2, 3 10 nA 1 500 nA 2, 3 25 nA 1 500 nA 2 Vin= -5mV, I7=50mA 1.5 V 1, 2, 3 Vin= -6mV, I7=8mA 0.4 V 1, 2, 3 5 mA 1, 2 15 mA 3 6 mA 1, 2 15 mA 3 10 nA 1 30 nA 2 10 nA 1 30 nA 2 Vcm=13.5V, Rs=50K Ohms Vcc=+ 18V, Vout=35V I5+I6=5mA Vcc= + 18V, Vout=50V I5+I6=5mA WRT -Vcc, WRT -Vcc, Positive Supply Current Input Leakage Current SUBGROUPS 1 Negative Supply Current Input Leakage Current UNIT nA Rs=50K Ohms Output Leakage Current MAX 10 Vcm = -14.5V, Rs=50K Ohms Ilout MIN -10 V85=V86=0V, Rs=50K Ohms Iib PINNAME Vcc= + 18V, V28=1V, V38=30V, Vout=50V WRT -Vcc, I5+I6=5mA Vcc= + 18V, V38=1V, V28=30V, Vout=50V WRT -Vcc, I5+I6=5mA 5 MICROCIRCUIT DATA SHEET MNLM111-X REV 0A0 Electrical Characteristics DC PARAMETERS(Continued) (The following conditions apply to all the following parameters, unless otherwise specified.) DC: V56=0, Rs=0 Ohm, +Vcc=+15V, Vcm=0, Vout=1.4V WRT -Vcc SYMBOL Vo(STB) PARAMETER CONDITIONS NOTES Collector Output Voltage (ST) ISTB = 3mA Vio Input Offset Voltage MAX UNIT SUBGROUPS 14 V 1 1 14 V 1 Vcm=13.5V -3 3 mV 1 -4 4 mV 2, 3 Vcm=13.5V, V85=V86=0V -3 3 mV 1 Vcm= -14.5V -3 3 mV 1 -4 4 mV 2, 3 -3 3 mV 1 -3 3 mV 1 -4 4 mV 2, 3 V85=V86=0V -3 3 mV 1 Vout=0.4V, +Vcc=4.5V, -Vcc=0V, Vcm=3V -5 5 mV 1 -6 6 mV 2, 3 -3 3 mV 1 -4 4 mV 2, 3 -5 5 mV 1 -6 6 mV 2, 3 -3 3 mV 1 -4 4 mV 2, 3 Vout=4.5V, +Vcc=4.5V, -Vcc=0V, Vcm=3V Vout=0.4V, +Vcc=4.5V, -Vcc=0V, Vcm=0.5V Vout=4.5V, +Vcc=4.5V, -Vcc=0V, Vcm=0.5V Large Signal Gain MIN 1 Vcm= -14.5V, V85=V86=0V Avs PINNAME -12V < Vout < 35V, Rl=1K Ohm 2 40 V/mV 4 2 30 V/mV 5, 6 AC PARAMETERS (The following conditions apply to all the following parameters, unless otherwise specified.) AC: V56=0, Rs=0 Ohm, +Vcc=+15V, Vcm=0, Vout=1.4V WRT -Vcc tr Response Time 400 6 nS 7 MICROCIRCUIT DATA SHEET MNLM111-X REV 0A0 Electrical Characteristics DC PARAMETERS: DRIFT VALUES (The following conditions apply to all the following parameters, unless otherwise specified.) DC: V56=0, Rs=0 Ohms, +Vcc = +15V, Vcm=0, Vout=1.4V WRT -Vcc. "Deltas not required on B-Level product. Deltas required for S-Level product ONLY as specified on Internal Processing Instructions (IPI)." SYMBOL PARAMETER Iib Input Bias Current Vio Input Offset Voltage Note 1: Note 2: CONDITIONS NOTES Rs=50K Ohms Tested on LTX system. Datalog reading in K = V/mV. 7 PINNAME MIN MAX UNIT SUBGROUPS -10 10 nA 1 -0.5 0.5 mV 1 MICROCIRCUIT DATA SHEET MNLM111-X REV 0A0 Graphics and Diagrams GRAPHICS# DESCRIPTION 05815HRA3 LCC (E), TYPE C, 20 TERMINAL (B/I CKT) 06047HRA2 CERDIP (J), 8 LEAD (B/I CKT) 08358HRB2 METAL CAN, (H) TO-99,8 LEAD,.200 DIA P.C.(B/I CKT) 08570HRA1 CERDIP (J), 14 LEAD (B/I CKT) 09569HRC2 CERPACK (W), 10 LEAD (B/I CKT) E20ARE LCC (E), TYPE C, 20 TERMINAL(P/P DWG) H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG) J08ARL CERDIP (J), 8 LEAD (P/P DWG) J14ARH CERDIP (J), 14 LEAD (P/P DWG) P000264A METAL CAN (H), 8 LEAD (PINOUT) P000265A CERDIP (J), 8 LEAD (PINOUT) P000266A CERDIP (J), 14 LEAD (PINOUT) P000267A CERPACK (W), 10 LEAD (PINOUT) P000314B LCC (E), 20 LEAD (PINOUT) P000373A CERAMIC SOIC (WG), 10 LEAD (PINOUT) W10ARG CERPACK (W), 10 LEAD (P/P DWG) WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG) See attached graphics following this page. 8 N N N/C 1 14 N/C GND 2 13 N/C IN+ 3 12 N/C IN- 4 11 V+ N/C 5 10 N/C V- 6 9 OUTPUT BALANCE 7 8 BALANCE/ STROBE LM111J 14 - LEAD DIP CONNECTION DIAGRAM TOP VIEW P000266A N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 N N/C 4 IN+ N/C GND N/C V+ N/C 3 2 1 20 19 18 N/C 5 17 OUTPUT N/C 6 16 N/C IN- 7 15 N/C 8 14 BALANCE/ STROBE N/C 9 10 11 N/C V- N/C 12 BALANCE 13 N/C LM111E 20 - LEAD LCC CONNECTION DIAGRAM TOP VIEW P000314B N MIL/AEROSPACE OPERATIONS 2900 SEMICONDUCTOR DRIVE SANTA CLARA, CA 95050 N