Original Creation Date: 06/28/95
Last Update Date: 11/12/98
Last Major Revision Date: 08/14/98
MNLM111-X REV 0A0 MICROCIRCUIT DATA SHEET
VOLTAGE COMPARATOR
General Description
The LM111 is a voltage comparator that has input currents nearly a thousand times lower
than devices such as the LM106 or LM710. It is also designed to operate over a wider
range of supply voltages; from standard + 15V op amp supplies down to the single 5V supply
used for IC logic. The output is compatible with RTL, DTL and TTL as well as MOS circuits.
Further, it can drive lamp or relay switching voltages up to 50V at currents as high as 50
mA.
Both the inputs and the output of the LM111 can be isolated from system ground, and the
output can drive loads referred to ground, the positive supply or the negative supply.
Offset balancing and strobe capability are provided, and outputs can be wire OR'ed.
Although slower than the LM106 and LM710 (200 ns response time vs 40 ns) the device is
also much less prone to spurious oscillations. The LM111 has the same pin configuration
as LM106 and LM710.
NS Part Numbers
LM111E/883
LM111H/883
LM111J-8/883
LM111J/883
LM111W/883
LM111WG/883
Industry Part Number
LM111
Prime Die
LM111
Processing
MIL-STD-883, Method 5004
Quality Conformance Inspection
MIL-STD-883, Method 5005
Subgrp Description Temp ( C)
o
1 Static tests at +25
2 Static tests at +125
3 Static tests at -55
4 Dynamic tests at +25
5 Dynamic tests at +125
6 Dynamic tests at -55
7 Functional tests at +25
8A Functional tests at +125
8B Functional tests at -55
9 Switching tests at +25
10 Switching tests at +125
11 Switching tests at -55
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MICROCIRCUIT DATA SHEET
MNLM111-X REV 0A0
Features
- Operates from single 5V supply
- Input current: 150 nA max. over temperature
- Offset current: 20 nA max. over temperature
- Differential input voltage range: +30V
- Power consumption: 135 mW at +15V
2
MICROCIRCUIT DATA SHEET
MNLM111-X REV 0A0
(Absolute Maximum Ratings)
(Note 1)
Total Supply Voltage 36V
Output to Negative Supply Voltage 50V
Ground to Negative Supply Voltage 30V
Differential Input Voltage + 30V
Input Voltage
(Note 3) + 15V
Power Dissipation
(Note 2) 500mW
Output Short Circuit Duration 10 Sec
Operating Temperature Range -55 C to +125 C
Thermal Resistance
ThetaJA 162 C/W Metal Can Pkg (Still Air @ 0.5W) 92 C/W (500LF/Min Air flow @ 0.5W)
134 C/W CERDIP (8-LEAD) (Still Air @ 0.5W) 76 C/W (500LF/Min Air flow @ 0.5W)
97 C/W CERDIP (14-LEAD) (Still Air @ 0.5W) 65 C/W (500LF/Min Air flow @ 0.5W)
231 C/W CERPACK (10-Lead) (Still Air @ 0.5W) 153 C/W (500LF/Min Air flow @ 0.5W)
90 C/W LCC (20-Lead) (Still Air @ 0.5W) 65 C/W (500LF/Min Air flow @ 0.5W)
231 C/W CERAMIC SOIC (Still Air @ 0.5W) 153 C/W (10-Lead) (500LF/Min Air flow @ 0.5W)
ThetaJC 50 C/W Metal Can Pkg 21 C/W CERDIP ( 8-Lead) 20 C/W CERDIP (14-Lead) 24 C/W CERPACK (10-Lead) 21 C/W LCC (20-Lead) 24 C/W CERAMIC SOIC (10-Lead)
Storage Temperature Range -65 C to 150 C
Lead Temperature 260 C(Soldering, 10 seconds)
Voltage at Strobe Pin V+ -5V
ESD Rating
(Note 4) 300V
3
MICROCIRCUIT DATA SHEET
MNLM111-X REV 0A0
(Absolute Maximum Ratings)(Continued)
(Note 1)
Package Weight
(Typical) TBD Metal Can Pkg TBD CERDIP ( 8-Lead) TBD CERDIP (14-Lead) TBD CERPACK (10-Lead) 220mg CERAMIC SOIC
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.
Operating Ratings indicate conditions for which the device is functional, but do not
guarantee specific performance limits. For guaranteed specifications and test
conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed. Some performance characteristics may degrade
when the device is not operated under the listed test conditions.
Note 2: The maximum power dissipation must be derated at elevated temperatures and is
dictated by Tjmax (maximum junction temperature), ThetaJA (package junction to
ambient thermal resistance), and TA (ambient temperature). The maximum allowable
power dissipation at any temperature is PDmax = (Tjmax - TA)/ThetaJA or the number
given in the Absolute Maximum Ratings, whichever is lower.
Note 3: This rating applies for +15V supplies. The positive input voltage limit is 30V above
the negative supply. The negative input voltage limit is equal to the negative
supply voltage or 30V below the positive supply, whichever is less.
Note 4: Human body model, 1.5K Ohms in series with 100pF.
4
MNLM111-X REV 0A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: V56=0, Rs=0 Ohm, +Vcc=+15V, Vcm=0, Vout=1.4V WRT -Vcc
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Iio Input Offset
Current Vcm=13.5V, Rs=50K Ohms -10 10 nA 1
-20 20 nA 2, 3
Vcm=13.5V, V85=V86=0V, Rs=50K Ohms -30 30 nA 1
Vcm=-14.5V, Rs=50K Ohms -10 10 nA 1
-20 20 nA 2, 3
Vcm=-14.5V, V85=V86=0V, Rs=50K Ohms -30 30 nA 1
Rs=50K Ohms -10 10 nA 1
-20 20 nA 2, 3
V85=V86=0V, Rs=50K Ohms -30 30 nA 1
Iib Input Bias
Current Vcm=13.5V, Rs=50K Ohms 100 nA 1
150 nA 2, 3
Vcm = -14.5V, Rs=50K Ohms 100 nA 1
150 nA 2, 3
Rs=50K Ohms 100 nA 1
150 nA 2, 3
Ilout Output Leakage
Current Vcc=+ 18V, Vout=35V WRT -Vcc,
I5+I6=5mA 10 nA 1
500 nA 2, 3
Ilg Ground Leakage
Current Vcc= + 18V, Vout=50V WRT -Vcc,
I5+I6=5mA 25 nA 1
500 nA 2
Vsat Saturation
Voltage Vin= -5mV, I7=50mA 1.5 V 1, 2,
3
Vin= -6mV, I7=8mA 0.4 V 1, 2,
3
Icc- Negative Supply
Current 5 mA 1, 2
15 mA 3
Icc+ Positive Supply
Current 6 mA 1, 2
15 mA 3
Il1 Input Leakage
Current Vcc= + 18V, V28=1V, V38=30V,
Vout=50V WRT -Vcc, I5+I6=5mA 10 nA 1
30 nA 2
Il2 Input Leakage
Current Vcc= + 18V, V38=1V, V28=30V,
Vout=50V WRT -Vcc, I5+I6=5mA 10 nA 1
30 nA 2
5
MNLM111-X REV 0A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS(Continued)
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: V56=0, Rs=0 Ohm, +Vcc=+15V, Vcm=0, Vout=1.4V WRT -Vcc
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Vo(STB) Collector Output
Voltage (ST) 114 V1
ISTB = 3mA 1 14 V 1
Vio Input Offset
Voltage Vcm=13.5V -3 3 mV 1
-4 4 mV 2, 3
Vcm=13.5V, V85=V86=0V -3 3 mV 1
Vcm= -14.5V -3 3 mV 1
-4 4 mV 2, 3
Vcm= -14.5V, V85=V86=0V -3 3 mV 1
-3 3 mV 1
-4 4 mV 2, 3
V85=V86=0V -3 3 mV 1
Vout=0.4V, +Vcc=4.5V, -Vcc=0V, Vcm=3V -5 5 mV 1
-6 6 mV 2, 3
Vout=4.5V, +Vcc=4.5V, -Vcc=0V, Vcm=3V -3 3 mV 1
-4 4 mV 2, 3
Vout=0.4V, +Vcc=4.5V, -Vcc=0V,
Vcm=0.5V -5 5 mV 1
-6 6 mV 2, 3
Vout=4.5V, +Vcc=4.5V, -Vcc=0V,
Vcm=0.5V -3 3 mV 1
-4 4 mV 2, 3
Avs Large Signal Gain -12V < Vout < 35V, Rl=1K Ohm 2 40 V/mV 4
2 30 V/mV 5, 6
AC PARAMETERS
(The following conditions apply to all the following parameters, unless otherwise specified.)
AC: V56=0, Rs=0 Ohm, +Vcc=+15V, Vcm=0, Vout=1.4V WRT -Vcc
tr Response Time 400 nS 7
6
MNLM111-X REV 0A0 MICROCIRCUIT DATA SHEET
Electrical Characteristics
DC PARAMETERS: DRIFT VALUES
(The following conditions apply to all the following parameters, unless otherwise specified.)
DC: V56=0, Rs=0 Ohms, +Vcc = +15V, Vcm=0, Vout=1.4V WRT -Vcc. "Deltas not required on B-Level product.
Deltas required for S-Level product ONLY as specified on Internal Processing Instructions (IPI)."
SYMBOL PARAMETER CONDITIONS NOTES PIN-
NAME MIN MAX UNIT SUB-
GROUPS
Iib Input Bias
Current Rs=50K Ohms -10 10 nA 1
Vio Input Offset
Voltage -0.5 0.5 mV 1
Note 1: Tested on LTX system.
Note 2: Datalog reading in K = V/mV.
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MICROCIRCUIT DATA SHEET
MNLM111-X REV 0A0
Graphics and Diagrams
GRAPHICS# DESCRIPTION
05815HRA3 LCC (E), TYPE C, 20 TERMINAL (B/I CKT)
06047HRA2 CERDIP (J), 8 LEAD (B/I CKT)
08358HRB2 METAL CAN, (H) TO-99,8 LEAD,.200 DIA P.C.(B/I CKT)
08570HRA1 CERDIP (J), 14 LEAD (B/I CKT)
09569HRC2 CERPACK (W), 10 LEAD (B/I CKT)
E20ARE LCC (E), TYPE C, 20 TERMINAL(P/P DWG)
H08CRF METAL CAN (H), TO-99, 8LD, .200 DIA P.C. (P/P DWG)
J08ARL CERDIP (J), 8 LEAD (P/P DWG)
J14ARH CERDIP (J), 14 LEAD (P/P DWG)
P000264A METAL CAN (H), 8 LEAD (PINOUT)
P000265A CERDIP (J), 8 LEAD (PINOUT)
P000266A CERDIP (J), 14 LEAD (PINOUT)
P000267A CERPACK (W), 10 LEAD (PINOUT)
P000314B LCC (E), 20 LEAD (PINOUT)
P000373A CERAMIC SOIC (WG), 10 LEAD (PINOUT)
W10ARG CERPACK (W), 10 LEAD (P/P DWG)
WG10ARC CERAMIC SOIC (WG), 10 LEAD (P/P DWG)
See attached graphics following this page.
8
N
N
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
1 14
2 13
3 12
4 11
5 10
6 9
7 8
N/C
GND
IN-
N/C
V-
BALANCE BALANCE/
OUTPUT
N/C
V+
N/C
N/C
N/C
14 - LEAD DIP
LM111J
TOP VIEW
CONNECTION DIAGRAM
P000266A
IN+
STROBE
N
N
MIL/AEROSPACE OPERATIONS
2900 SEMICONDUCTOR DRIVE
SANTA CLARA, CA 95050
4 18
5
6
7
8 14
9 10 11 12 13
17
16
15
3 2 1 20 19
N/C
N/C
N/C
IN+
GND N/C V+ N/C
N/C
OUTPUT
N/C
BALANCE/
N/C
BALANCE
N/C
V-
N/C
IN-
N/C
LM111E
20 - LEAD LCC
CONNECTION DIAGRAM
TOP VIEW
P000314B
N/C
STROBE
N
