© 2005-2012 Microchip Technology Inc. DS22018F-page 1
MCP2021/2/1P/2P
Features
The MCP2021/2/1P/2P are compliant with LIN
Bus Specifications 1.3, 2.0, and 2.1 and are
compliant to SAE J2602
Support Baud Rates up to 20 Kbaud with
LIN-compatible output driver
43V Load dump protected
Very low EMI meet s stri ng ent OEM requi rem ents
Wide supply voltage, 6.0V - 18.0V continuous:
- Maximum input voltage of 30V
Extended Temperature Range: -40 to +125°C
Interface to PIC EUSART and standard USARTs
Local Interconnect Network (LIN) bus pin:
- Internal pull-up resistor and diode
- Protected again st grou nd sho rts
- Protected again st los s of groun d
- High current drive
Automatic thermal shutdown
On-Chip Voltage Regula tor:
- Output voltage of 5.0V with tolerances of
±3% overtemperature range
- Available with alternate output voltage of
3.3V with tolerances of ±3% overtemperature
range
- Maximum continuous input voltage of 30V
- Internal thermal overload protection
- Internal short circuit current limit
- External components limited to filter capacitor
only and load c apacitor
Two low-power modes:
- Receiver on, Transmitter off, voltage
regulator on (85 µA)
- Receiver monitoring bus, Transmitter off,
voltage regulator off (16 µA)
Description
The MCP2021/2/1P/2P provides a bidirectional, half-
duplex communi catio n physic al interfa ce to auto motive
and industrial LIN systems that meets the LIN bus
specification Revision 2.0. The devices incorporate a
voltage regulator with 5V at 50 mA or 3.3V at 50 mA
regulated power-supply outputs.
The regul ator is short-circuit prot ected, and is p rotected
by an interna l thermal shut down circuit. The de vice has
been s pecifica lly des igned to operate in the a utomotiv e
operating environment and will survive all specified
transient conditions while meeting all of the stringent
quiescent current requirements.
The MCP2021/2/1P/2P family of devices includes the
following packa ges.
8-pin PDIP, DFN and SOIC packages:
MCP202 1-3 30, LIN -c om p a tibl e d r iv er, 8-p in, 3.3 V
regulator, wake up on dominant level of LBUS
MCP202 1-5 00, LIN -c om p a tibl e d r iv er, 8-p in, 5.0 V
regulator, wake up on dominant level of LBUS
MCP202 1P-3 30, LIN- com p atible driver, 8-pin,
3.3V regulator, wake up at falling edge of LBUS
voltage
MCP202 1P-5 00, LIN- com p atible driver, 8-pin,
5.0V regulator, wake up at falling edge of LBUS
voltage
14-pin PDIP, TSSOP and SOIC pack ages wit h RESET
output:
MCP2022-330, LIN-compatible driver, 14-pin,
3.3V regulator, RESET output, wake up on domi-
nant level of LBUS
MCP2022-500, LIN-compatible driver, 14-pin,
5.0V regulator, RESET output, wake up on domi-
nant level of LBUS
MCP202 2P-3 30, LIN- c omp atible driver, 14-pin,
3.3V regulator, RESET output, wake up at falling
edge of LBUS voltage
MCP202 2P-5 00, LIN- c omp atible driver, 14-pin,
5.0V regulator, RESET output, wake up at falling
edge of LBUS voltage
LIN Transceiver with Voltage Regulator
MCP2021/2/1P/2P
DS22018F-page 2 © 2005-2012 Microchip Technology Inc.
Package Types
MCP2021/2 Block Diagram
MCP2021
DFN-8, PDIP-8, SOIC-8
1
2
3
4
8
7
6
5
MCP2022
PDIP-14, SOIC-14, TSSOP-14
1
2
3
4
14
13
12
11
10
9
8
5
6
7
RXD
CS/LWAKE
VREG
TXD
FAULT/TXE
VBB
LBUS
VSS
RXD
CS/LWAKE
VREG
TXD
RESET
NC
NC
FAULT/TXE
VBB
LBUS
VSS
NC
NC
NC
MCP2021P MCP2022P
Voltage
Regulator Ratiometric
Reference
OC
Thermal
Protection
Internal Circuits
VREG
FAULT/TXE
RXD
TXD
VBB
LBUS
VSS
~30 kΩ
CS/LWAKE
Wake-Up
Logic and
Power Control
RESET
Short Circuit
Protection
Short Circuit
Protection
Thermal
Protection
(MCP2022 ONLY)
+
© 2005-2012 Microchip Technology Inc. DS22018F-page 3
MCP2021/2/1P/2P
MCP2021P/2P Block Diagram
Ratiometric
Reference
Internal Circuits
VREG
RXD
TXD
VBB
VSS
~30
Wake-Up
Logic and
Power Control
RESET
Thermal
Protection
kΩ
(MCP2022P ONLY)
LBUS
Short-Circuit
Prot ection
OC
CS/LWAKE
FAULT/TXE
+
Voltage
Regulator
Short-Circuit
Protection
Thermal
Short-Circuit
Protection
and
MCP2021/2/1P/2P
DS22018F-page 4 © 2005-2012 Microchip Technology Inc.
NOTES:
© 2005-2012 Microchip Technology Inc. DS22018F-page 5
MCP2021/2/1P/2P
1.0 DEVICE OVERVIEW
The MCP2021/2/1P/2P provides a physical interface
betwee n a mi crocon troller and a LI N hal f-duple x bus . It
is intended for automotive and industrial applications
with serial bus speeds up to 20 Kbaud.
The MCP2021 /2/1P/2P prov ides a half-du plex, bidire c-
tional communications interface between a microcon-
troller and the serial network bus. This device will
translate the CMOS/TTL logic levels to LIN-level logic,
and vice ver sa.
The LIN specification 2.0 requires that the trans-
ceiver(s) of all nodes in the system be connected via
the LI N pin, refer enced to g round, and wit h a maxi mum
external termination resistance load of 510Ω from LIN
bus to batt ery supply. The 510Ω cor resp onds to 1 Ma s-
ter and 16 Slave nodes.
The MCP2021/2/1P/2P-500 provides a +5V, 50 mA,
regulated power output. The regulator uses an LDO
design, is short-circuit protected, and will turn the
regulator output off if it falls below 3.5V.
The MCP2021/2/1P/2P also includes thermal-
shutdown protection.
The regulator is specifically designed to operate in the
automotive environment and will survive +43V load
dump transients, double-battery jumps, and reverse
battery connections when a reverse blocking diode is
used. The other members of the MCP2021/2/1P/2P-
330 fami ly output +3.3V at 50 mA with a turn-off volt age
of 2.5V. (See Section 1.6 “Internal Voltage
Regulator”).
MCP2021/2 wakes from Power-Down mode on a
dominant level on LBUS. MCP2021P/2P wakes at a
transition from recessive level to dominant level on
LBUS.
1.1 Optional External Protection
1.1.1 REVERSE BATTERY PROTECTION
An external reverse-battery-blocking diode should be
used to provide polarity protection (see Figure 1-6).
1.1.2 TRANSIENT VOLTAGE
PROTECTION (LOAD DUMP)
An external 43V transient suppressor (TVS) diode,
between VBB and ground, with a 50Ω tran s ie nt pr o t ec -
tion resistor (RTP) in series with the battery supply and
the VBB pin protect the device from power transients
(see Figure 1-6) and ESD eve nts . While this pro tectio n
is optional, it is considered good engineering practice.
The resi stor value is chosen ac cording to Equation 1-1.
EQUATION 1-1:
1.2 Internal Protection
1.2.1 ESD PROTECTION
For component-level ESD ratings, please refer to the
Section 2.1 “Absolute Maximum Ratings†”.
1.2.2 GROUND LOSS PROTECTION
The LIN Bus specification states that the LIN pin must
transiti on to the rec essive st ate when ground is discon-
nected. Therefore, a loss of ground effectively forces
the LIN line to a hi-impedance level.
1.2.3 THERMAL PROTECTION
The thermal protection circuit monitors the die temper-
ature and is able to shut down the LIN transmitter and
voltage regulator if it detects a thermal overload.
There are three causes for a thermal overload. A ther-
mal shut down can be triggered by any one, or a com-
bination of, the following thermal overload conditions:
Voltage regu lator overload
LIN bus output overload
Increase in die temperature due to increase in
environmental temperature
Driving the TXD and checking the RXD pin makes it
possib le to determine whether there is a bus co ntention
(i.e., Rx = low, Tx = high) or a thermal overload condi-
tion (i.e., Rx = high, Tx = low).
RTP <= ( VBBmin - 5.5) / 250 mA.
5.5V = VUVLO + 1.0V,
250 mA is the peak current at Power-On when
VBB = 5.5V
MCP2021/2/1P/2P
DS22018F-page 6 © 2005-2012 Microchip Technology Inc.
FIGURE 1-1: Thermal Shutdown State Diagrams.
1.3 Modes of Operation
For an overview of all operational modes, please refer
to Table 1-1.
1.3.1 POWER-ON RESET MODE
Upon application of VBB, the device enters Power-on
Reset mode (POR). During this mode, the part main-
ta ins the digit al se ction i n a Res et mode and wa its until
the voltage on pin VBB rises above the “ON” threshold
(Typ. 5.75V) to enter to the Ready mode. If during the
operat ion, the vo lta ge on pin VBB fal ls below the “OFF”
threshold (T yp. 4.25V), the part comes back to the POR
mode.
1.3.2 POWER-DOWN MODE
In the Power-Down mode, the transmitter and the
voltage regulator are off. Only the receiver wake-up
from LIN bus section, and the CS/LWAKE pin wake-up
circuit s are in operation. This is the lowest p ower mode.
If pin CS/LWAKE goes to a high level during Power-
Down mode, the device immediately enters Ready
mode and enables the voltage regulator; and after the
output has stabili zed (app roximately 0.3 m s to 1.2 ms),
the device goes to Operation mode or Transmitter-Off
mode (see Figure 1-2 for MCP2021/2 and Figure 1-3
for MCP2021P/2P).
LIN bus activity will also change the device from
Power-Down mode to Ready mode. MCP2021/2
wakes up on dominant level of LIN bus, and
MCP2021P/2P on a falling edge that follows a domi-
nant level lasting 20 µs of time.
The Pow er-Dow n mo de can be rea che d th rou gh either
Operation mode or Transmitter-Off mode.
1.3.3 READY MODE
Upon entering Ready mode, the voltage regulator and
receiver-threshold-detect circuit are powered up. The
tran smitt er remai ns i n off sta te. T he d evi ce is r ead y to
receive data as soon as the regulator is stabilized, but
not to transmit. If a microcontroller is being driven by
the voltage regulator output, it will go through a POR
and initi ali zatio n seque nce. Th e LIN pin is in the re ces-
sive state for MCP2021/2 and in floating state for
MCP2021P/2P.
The device will stay in Ready mode until the output of
the volt age regulato r has sta bilized and the C S/L W AKE
pin is true (‘1’). After VREG is stable and CS/LWAKE is
high, MCP2021/2 will enter Operation mode; and
MCP2021P/2P will enter either Operation mode or
Transmitter-Off mode, depending on the level of the
FAULT/TXE pin (refer to Figure 1-3).
1.3.4 OPERATION MODE
In this mode, all internal modules are operational.
The device will go into the Power-Down mode on the
falling edge of CS/LWAKE.
For the MCP2021P/2P devices, the pull-up resistor is
switched on only in this mode.
Operation
Mode Transmitter
Shutdown
LIN B us
Voltage
Shutdown
Regulator
Output
Temperature <SHUTDOWN
TEMP
Overload
to V
BB
Overload
Temperat ure <SHUTDOWN
TEMP
Note: The ab ov e tim e in terv al <1.2 ms as su me s
12V VBB input and no thermal shutdown
event.
© 2005-2012 Microchip Technology Inc. DS22018F-page 7
MCP2021/2/1P/2P
1.3.5 TRANSMITTER-OFF MODE
Whenever the FAULT/TXE signal is low, or permanent
dominant on TXD/LBUS is detected, the LBUS
transmitter is of f.
The transmitter may be re-enabled whenever the
FAULT/TXE signal returns hi gh, eithe r by removing the
internal fault condition or when the CPU returning the
FAULT/TXE high. The tran sm itt er wi ll not be ena bl ed if
the FAULT/TXE pin is brought high when the internal
fault is still present.
If TX-OFF mode is caused by TXD/LBUS permanent
dominant level, the transmitter can recover when the
permanent dominant status disappears.
The transm it ter is als o turn ed o ff whenev er th e vol t ag e
regulator is unstable or recovering from a fault. This
prevents unwanted disruption of the b us during times of
uncertain operation.
1.3.6 WAKE-UP
The Wake-Up sub-module observes the LBUS in order
to detect bus activity. Bus activity is detected when the
volt age on th e LBUS st ay s belo w a thresh old of ap pro x-
imately 0.4VBB for at least a typical duration of 20 µs.
The MCP2021/2 device is level sensitive to LBUS. Dom-
inant level longer than 20 µs will cause the device to
leave the Power-Down mode. The MCP2021P/2P
device is falling-edge sensitive to LBUS. Only the LBUS
transition from recessive to dominant followed by at
least 20 µs dominant level can wake up the device.
Putting CS/LWAKE to high level also wakes up the
device. Refer to Figure 1-2 and Figure 1-3.
1.3.7 DIFFERENCE DETAILS BETWEEN
MCP2021/2 AND MCP2021P/2P
The MCP202xP is a minor variation of the MCP202x
device that adds improved state machine control as
well as the ability to disconnect the internal 30kΩ pull-
up between LIN and VBB in all modes except normal
operation. These changes allow the system designer
to better handle fault conditions and reduce the overall
system current consumption. The differences between
the two device versions are as follows:
1. Switchable LIN-VBB Pull-Up Resistor:
On the MCP202xP device, the internal 30kΩ
pull-up resistor is disconnected in all modes
except Operation Mode. On the MCP202x
device , this pull-up resistor is a lways conne cted.
(See the MCP2021/2 Block Diagram and the
MCP2021P/2P Block Diagram for details.)
2. Power Down Wake-up on LIN Traffic:
The MCP202xP device requires a LIN falling
edge to generate a valid Wake condition due to
bus traffic. The MCP202x device will generate a
Wake anytime LIN is at a valid dominant level.
Because of this, if the LIN bus becomes perma-
nently shorted, it becomes impossible to place
the MCP202x in a low power state.
3. State Machine Options:
The MCP202xP device is able to enter Trans-
mitter Off Mode from Ready Mode without tran-
sitioning through Operation Mode. The
MCP202x device must enter Operation Mode
from Ready Mode. (See State Machine Dia-
grams, Figure 1-2 and Figure 1-3 for details).
This capability allows the system designer to
monitor the bus in Ready Mode to determine if
the syste m should transiti on to normal operatio n
and connect the internal pull-up or if Ready
Mode was reached due to an invalid condition.
In the case of an invalid condition, the
MCP202xP device can be placed into Power
Down m ode wit hout connec ting the interna l pull-
up and waking other nodes on the LIN Bus net-
work.
To properly take advantage of the device differences
will require the system designer to implement some
microc ontroller co de to the power-up routi ne. This c ode
will monitor the status of the LIN bus to determine how
the dom inant signa l sho uld be respo nded t o. I t will a lso
determine if the local LI N node need s to respond or can
‘Listen Only’. If the local LIN node does not need to
respond , it can enter T ransmitter Off Mode, disconnect-
ing the 3 0kΩ pull- up, reducing mod ule current while still
maintaining the ability to properly receive all valid LIN
messages.
Note: To enter Transmitter Off, the system must
set TXE ‘low’ before pulling CS high (see
Figur e 1-5). Oth erwise, if CS is p ulled hig h
first, the MCP202xP will enter Operation
Mode due to the internal pull-up on TXE.
MCP2021/2/1P/2P
DS22018F-page 8 © 2005-2012 Microchip Technology Inc.
FIGURE 1-2: MCP2021/2 Operational Modes State Diagrams.
FIGURE 1-3: MCP2021P /2P Operati on al Mod es State Diag ra ms.
Power-Down
TX: OFF
RX: OFF
VREG: OFF
CS/LWAKE=0
Transmitter Off
TX: OFF
RX: ON
VREG: ON
POR
TX: OFF
RX: OFF
VREG: OFF
Operation
TX: ON
RX: ON
VREG: ON
Ready
TX: OFF
RX: ON
VREG: ON
VBAT>5.75V
CS/LWAKE=1&
VREG_OK=1
CS/LWAKE=0
FAULT/TXE=0
Or Faults*
FAULT/TXE=1
&No Faults*
CS/LWAKE=1
or dominant level on LBUS
Start
*Fault: thermal shutdown and TXD/LBUS permanent dominant
Note: While the device is in shutdown, TXD should not be actively driven high or it may power internal logic
through the ESD diodes and may damage the device.
Power-Down
TX: OFF
RX: OFF
VREG: OFF
CS/LWAKE=0
Transmitter Off
TX: OFF
RX: ON
VREG: ON
POR
TX: OFF
RX: OFF
VREG: OFF
Operation
TX: ON
RX: ON
VREG: ON
Ready
TX: OFF
RX: ON
VREG: ON
VBAT>5.75V
CS/LWAKE=1&
VREG_OK=1&
FAULT/TXE=1
CS/LWAKE=0
FAULT/TXE=0
Or Faults*
FAULT/TXE=1
&No Faults*
CS/LWAKE=1
or Falling edge on LBUS
Start
*Fault: thermal shutdown and TXD/LBUS permanent dominant
CS=1&VREG_OK=1
&FAULT/TXE=0
© 2005-2012 Microchip Technology Inc. DS22018F-page 9
MCP2021/2/1P/2P
FIGURE 1-4: MCP2021P/2P Wake-Up Due to Bus Disconnecting.
Ready
State
Sleep
0
LBUS
nFAULT_TXE
VREG
CS_LWAKE
0
MCP2021/2/1P/2P
DS22018F-page 10 © 2005-2012 Microchip Technology Inc.
FIGURE 1-5: Forced Power-Down Mode Sequence for MCP2021P/2P.
CS/LWAKE
VREG
FAULT/TXE
LBUS
Operation Mode Transmitter-Off
Mode Power-Down
Mode
tCSactive> = 2S
FAULT/TXE = 1
Forced internally
FAULT/TXE = 0
Forced exte rnally
LBUS disconnected;
e.g., Master pull-up &
internal resistor off;
LBUS floating.
Forced Power-Down Mode after BUS-OFF
instruction or a longer LIN-Bus inactivity
( > = 4 sec according to LIN specification)
STATE
© 2005-2012 Microchip Technology Inc. DS22018F-page 11
MCP2021/2/1P/2P
TABLE 1-1: OVERVIEW OF OPERATIONAL MODES
State Transmitter Receiver Voltage
Regulator Operation Comments
POR OFF OFF OFF Read VBB; if VBB>5.75V, enter Ready
mode
Ready OFF ON ON MCP2021/2:
If CS/LWAKE is high level, then Operation
mode.
MCP2021P/2P:
If CS/LWAKE is high level and FAULT/TXE
is high level, then Operation mode.
If CS/LWAKE is high level and FAULT/TXE
is low level, then TXOFF mode.
Bus Off state
Operation ON ON ON If CS/LWAKE is low level, then Power-
Down mode.
If FAULT/TXE is low level or T XD/LBUS
permanent dominant is detected, then
Transmitter-Off mode.
Normal
Operation
mode
Power-Down OFF Activity
Detect OFF On LIN bus falling, go to Ready mode. On
CS/LWAKE high level, go through Ready
mode; then, to either operation or
Transmitter-Off mode (refer to Figure 1-2
and Figure 1-3).
Low Power
mode
Transmitter-Off OFF ON ON If CS/LWAKE is low level, then Power-
Down mode.
If FAULT/TXE is high, then Operation
mode.
MCP2021/2/1P/2P
DS22018F-page 12 © 2005-2012 Microchip Technology Inc.
1.4 Pin Descriptions
TABLE 1-1: PINOUT DESCRIPTIONS
1.4.1 POWER OU TP UT (VREG)
Positive Supply Voltage Regulator Output pin.
1.4.2 GROUND (VSS)
Ground pin .
1.4.3 BATTERY (VBB)
Battery Pos itive Supply Volt age pin. This pin is also the
input for the internal voltage regulator.
1.4.4 TRANSMIT DATA INPUT (TXD)
The Transmit Data Input pin has an internal pull-up to
VREG. Th e LI N p i n i s l o w ( dom i nan t ) wh en T XD is lo w,
and high (recessive) when TXD is high.
For extra bus security, TXD is internally forced to ‘1
when VREG is less than 1.8V (typ.).
If the thermal protection detects an over-temperature
condition while the signal TXD is low, the transmitter is
shut dow n. The recov ery from the the rma l shu t do w n is
equal to adequate cooling time.
1.4.5 RECEIVE DATA OUTPUT (RXD)
The Receive Data Output pin is a standard CMOS
output and follows the state of the LIN pin.
1.4.6 LIN BUS
The bidirec tiona l LIN bus Int erface pin is the driver unit
for the LIN pin and i s co ntro ll ed by the sig nal TXD. LIN
has an open collector output with a current limitation.
To reduce EMI, the edges during the signal changes
are slope-controlled. To further reduce radiated emis-
sions, the LBUS pin has corner-rounding control for both
falling and rising edges.
The intern al LIN recei ver obs erves the ac tiv iti es o n th e
LIN bus, and generates output signal RXD that follows
the state of the LBUS. A 1st degree with 1 µS time con-
stant (160KhZ), low-pass input filter is placed to
maintain EMI immunity.
1.4.7 CS/LWAKE
Chip Sele ct In put pin . A i nter nal pull- dow n re sisto r wi ll
keep the CS/LWAKE pin low. This is done to ensure
that no disruptive data will be present on the bus while
the microcontroller is executing a POR and I/O initial-
ization sequence. The pin must see a high level to
activate the transmitter.
If CS/LWAKE= ‘0’ when the VBB supply is turned on,
the device stays in Ready mode (Low-Power mode). In
Ready mode, both the receiver and the voltage
regulator are on and the LIN transmitter driver is off.
If CS/LWAKE = ‘1when the VBB supply is turned on,
the devic e will pro ceed to either Operation or T ransmit-
ter-Off mode (refer to Figure 1-2 and Figure 1-3) after
the VREG output has stabilized.
This pin may also be used as a local wake-up input
(see Figure 1-6). In this implementation, the microcon-
troller will set the I/O pin that controls the CS/LWAKE
as an high-impedance input. The internal pull-down
resistor will keep the input low. An external switch, or
other source, can then wa ke up the transcei ver and th e
microcontroller.
Pin
Name
Devices
Pin
Type
Function
8-Pin
DFN,
PDIP,
SOIC
14-Pin
PDIP,
SOIC,
TSSOP
Normal Operation
VREG 3 3 O Power Output
VSS 5 11 P Ground
VBB 7 13 P Battery Supply
TXD 4 4 I Transmit Data Input (TTL)
RXD 1 1 O Receive Data Output (CMOS)
LBUS 6 1 2 I/O LIN bus (bidir ec tion al )
CS/LWAKE 2 2 TTL Chip Select (TTL)
FAULT/TXE 8 14 OD Fault Detect Output, Transmitter Enable (OD)
RESET 5 OD RESET signal Output (OD)
Legend: O = Output, P = Power, I = Input, TTL = TTL input buffer, OD = Open-Drain output
Note: CS/LWAKE should not be tied directly to
VREG as this could force the MCP2 02x into
Operation mode before the
microcontroller is initialized.
© 2005-2012 Microchip Technology Inc. DS22018F-page 13
MCP2021/2/1P/2P
1.4.8 FAULT/TXE
Fault Detect Output and Transmitter Enable Input
bidirectional pin.
This pin is an open-drain output. Its state is defined as
shown in Table 1-2. The transmitter driver is disabled
whenever this pin is low (‘0’), either from an internal
fault condition or by external drive. This allows the
transmi tter to be place d in an off st ate and st ill allow the
voltage regulator to operate. Refer to Table 1-1.
The FAULT/TXE also signals a mismatch between the
TXD input and the LBUS level. This can be used to
detect a bus contention. Since the bus exhibits a
propagation delay, the sampling of the internal
compare is debounced to eliminate false faults.
This pin has an internal pull-up resistor of
approximately 750 kΩ.
The F AUL T/TXE pin sampled at a rate faster than e very
10 µs.
TABLE 1-2: FAULT/TXE TRUTH TABLE
1.4.9 RESET
RESET is an open-drain output pin. This pin reflects an
internal signal that tracks the internal system voltage
has reached a valid, stable level.
As long as the in ternal volt age is valid, this pi n will keep
high im pedance. When the system vol tage drops below
the minimum required, the voltage regulator will shut
down and immediately convert the RESET output to
short to GND. A pull-up resistor is needed to change
the output to high/low voltage. When connected to a
micro-controller input, this can provide a warning that
the volt age regulator is shut ting down (see Figure 1-2).
Alternately, it can act as an external brown-out by con-
necting the RESET output to MCLR (see Figure 1-2). In
addition to monitoring the internal voltage, RESET is
asserted immediately upon entering the Power-Down
mode.
Note 1: The FAULT/TXE pi n is tr ue (0) whenev er
the internal circuits have detected a short
or thermal excursion and have disabled
the LBUS outp ut driv er.
2: FAULT/TXE is true ( 0) when VREG not OK
and has disabled the LBUS output driver.
TXD
In RXD
Out LINBUS
I/O Thermal
Override
FAULT/TXE
Definition
External
Input Driven
Output
LHV
BB OFF H L FAULT, TXD d riven low, LINBUS shorted to
VBB (Note 1)
HHV
BB OFF H H OK
LLGND OFF H HOK
HLGND OFF H HOK, data is being received from the LINBUS
xxVBB ON H L FAULT, transceiver in thermal shutdown
xxV
BB xLxNO F AULT, the CPU is commanding the
transceiver to turn off the transmitter driver
Legend: x = don’t care
Note 1: The FAULT/TXE is valid after approximately 25 µs after TXD falling edge. This is to eliminate false fault
reporting during bus propagation delays.
MCP2021/2/1P/2P
DS22018F-page 14 © 2005-2012 Microchip Technology Inc.
1.5 Typical Application s
FIGURE 1-6: Typical MCP202 1/MC P2021P Applic ati on.
LIN Bus
27V(4)
VBB
LBUS
VREG
TXD
RXD
VSS
VDD
TXD
RXD
+12
CF
CG
CS/LWAKE
I/O
FAULT/TXEI/O
43V(5)
1kΩ
+12
Master Node Only
+12
220 kΩ
WAKE-UP
Note 1: See Figure 2-3 for correct capacity and ESR for stable operation..
2: CF is the filter capacitor for the external voltage supply.
3: This diode is only needed if CS/LWAKE is connected to a 12V supply.
4: Transient suppressor diode. Vclamp L = 43V.
5: These components are required for additional load dump protection above 43V.
(3)
RTP(5)
100 pF
© 2005-2012 Microchip Technology Inc. DS22018F-page 15
MCP2021/2/1P/2P
FIGURE 1-7: Typical MCP202 2/MC P2022P Applic ati on.
FIGURE 1-8: Typical LIN Network Configuration.
LIN Bus
27V(4)
VBB
LBUS
VREG
TXD
RXD
VSS
VDD
TXD
RXD
+12
CF
CG
CS/LWAKE
I/O
FAULT/TXE
I/O
43V(5)
1kΩ
+12
Master Node Only
+12
220 kΩ
WAKE-UP
Note 1: See Figure 2-3 for correct capacity and ESR for stable operation.
2: CF is the filter capacitor for the external voltage supply.
3: This diode is only needed if CS/LWAKE is connected to a 12V supply.
4: Transient suppressor diode. Vclamp L = 43V.
5: These components are required for additional load dump protection above 43V.
6: Required if CPU does not have internal pull-up.
(3)
RTP(5)
100 pF
INT or MCLR RESET
VDD(6)
LIN bus
MCP202X
Master
µC
1kΩ
VBB
Slave 1
µC Slave 2
µC Slave n <16
µC
40m
+ Return
LIN bus
LIN bus
MCP202X LIN bus
MCP202X LIN bus
MCP202X
MCP2021/2/1P/2P
DS22018F-page 16 © 2005-2012 Microchip Technology Inc.
1.6 Internal Voltage Regulator
1.6.1 5.0V REGULATOR
The MCP20 21 has a low-drop-out volt age, positive reg-
ulator capable of supplying 5.00 VDC ±3% at up to
50 mA of load cur rent over the entir e operating temp er-
ature range of -40°C to +125°C. With a load current of
50 mA, the minimum i npu t to output vol tage differential
required for the output to remain in regulation is typi-
cally + 0.5 V (+1V m ax imum ov er th e ful l o pera tin g tem -
perature range). Quiescent current is less than 100 µA
with a full 50 mA load current when the input to output
voltage differential is greater than +3.00V.
The regulator requires an external output bypass
capacitor for stability. See Figure 2-3 for correct
capacity and ESR for stable operation.
Desig ned for autom otive applica tions, the reg ulator will
prote ct itself from doubl e-batter y jumps and up to +43V
load dump transients. The voltage regulator has both
short-circuit and thermal-shut-down protection built in.
Regard ing th e correlatio n b etwee n VBB, VREG and IDD,
please refer to Figure 1-10 throughFigure 1-12. When
the input voltage (VBB) drops below the differential
needed to provide stable regulation, the output VREG
will track the input down to approximately 3.5V, at
which point the regulator will turn off. This will allow
microcontrollers with internal POR circuits to generate
a clean arming of the POR trip point . The MCP202 1 will
then monitor VBB and turn on the regulator when VBB
rises above 5.75, again.
When the input vo lt ag e (V BB) dro p s bel ow t he d ifferen-
tial needed to provide stable regulation, the output
VREG) will track the input down to approximately
+4.25V. The regulator will turn off the output at this
point. Th is will al low PIC® microcontrollers with internal
POR circuit s to generate a clean arming of the POR trip
point. The regulator output will stay off until VBB is
above +5.75 VDC.
In the st art phase, the device must detect at le ast 5.75V
to initiate operation during power up. In the Power-
Down mode, the VBB monitor will be turned off.
The regulator has a thermal shutdown. If the thermal
protecti on circuit detects an overtem perature co ndition,
and the signals TXD and RXD are LOW , or TXD is HIGH,
the regulator will shut down. The recovery from the
thermal shutdown is equal to adequate cooling time.
FIGURE 1-9: Voltage Regulator Block Diagram.
Note: The regulator has an overload current
limitin g of approximately 100 mA. Durin g a
short circuit, the VREG is monitored. If
VREG is lower than 3.5V, the VREG will turn
off. After a recovery time of about three
milliseconds, the VREG will be checked
again. If there is no short circuit (VREG
>3.5V), the VREG will be switched back on.
Pass
Element
Sampling
Network
Buffer
VREG VBB
VSS
Fast
Transient
Loop
VREF
© 2005-2012 Microchip Technology Inc. DS22018F-page 17
MCP2021/2/1P/2P
1.6.2 3.3V REGULATOR
A metal option provides for a alternate 3.30 VDC ±3%
at up to 5 0 mA of loa d curre nt over the ent ire oper atin g
temperature range of -40°C to +125°C. All
specif icatio ns gi ven a bove for the 5.0V opera tion a pply
except for any difference noted here.
The same input tracking of 4.25V applies the 3.3V
regulator.
FIGURE 1-10: Voltage Regulator Output on POR.
Note: The regulator has an overload current
limiting of approximately 100 mA. If VREG
is lower than 2.5V, the VREG will turn off.
Note 1: Start-up, VBB < 5.75V, regulato r off.
2: VBB > 5.75V, regulator on.
3: VBB 5.5V, regulator tracks VBB.
4: VBB < 4.25V, regulator will turn off.
5.0
3.5
3
0
(1) (2) (3)
t
0t
6
2
8
4
VBB
V
VREG
V
MCP2021/2/1P/2P
DS22018F-page 18 © 2005-2012 Microchip Technology Inc.
FIGURE 1-11: Voltage Regulator Output on Power Dip.
Note 1: Voltage regulator on.
2: VBB 5.5V, regulator tracks VBB until VBB < 4.25V.
3: VREG < 3.5V, regulator is off.
4: VBB > 5.75V, regulator on.
5
3.5
3
0
(1) (2) (3)
t
0t
6
2
8
4
3.5
12
(4)
4
VBB
V
VREG
V
© 2005-2012 Microchip Technology Inc. DS22018F-page 19
MCP2021/2/1P/2P
FIGURE 1-12: Voltage Regulator Output on Overcurrent Situation.
1.7 ICSP™ Considerations
The following should be considered when the
MCP2021/2/1P/2P is connected to pins supporting
in-circuit pro g r am mi ng:
Pow er u sed for progra mming the microcontroller
can be supplied from the programmer or from the
MCP2021/2/1P/2P.
The voltage on VREG should not exceed the
maximum output voltage of VREG.
Note 1: IREG less than 50 mA, regulator on.
2: After IREG exceeds IREGmax, voltage regulator output will be reduced until VREG off is reached.
5.0
3.5
3
0
(1) (2)
t
0t
50
6
IREG
mA
VREG
V
MCP2021/2/1P/2P
DS22018F-page 20 © 2005-2012 Microchip Technology Inc.
NOTES:
© 2005-2012 Microchip Technology Inc. DS22018F-page 21
MCP2021/2/1P/2P
2.0 ELECTRICAL CHARACTERISTICS
2.1 Absolute Maximum Ratings†
VIN DC Voltage on RXD and TXD........................................................................................................-0.3 to VREG+0.3V
VIN DC Voltage on FAULT and RESET.........................................................................................................-0.3 to +5.5V
VIN DC Voltage on CS/LWAKE.......................................................................................................................-0.3 to +43V
VBB Battery Voltage, non-operating (LIN bus recessive, no regulator load, t < 60s) .....................................-0.3 to +43V
VBB Battery Voltage, transient ISO 7637 Test 1 ......................................................................................................-200V
VBB Battery Voltage, transient ISO 7637 Test 2a ...................................................................................................+150V
VBB Battery Voltage, transient ISO 7637 Test 3a ....................................................................................................-300V
VBB Battery Voltage, transient ISO 7637 Test 3b ...................................................................................................+200V
VBB Battery Voltage, continuous....................................................................................................................-0.3 to +30V
VLBUS Bus Voltage, continuous.......................................................................................................................-18 to +30V
VLBUS Bus Voltage, transient (Note 1)............................................................................................................-27 to +43V
ILBUS Bus Short Circuit Current Limit....................................................................................................................200 mA
ESD protection on LIN, VBB (IEC 61000-4-2, 330 Ohm, 150 pF) (Note 3)...................... ...... ..... ...... ...... . mi nimum ±9 kV
ESD protection on LIN, VBB (Charge Device Model) (Note 2)..............................................................................±1500V
ESD protection on LIN, VBB (Human Body Model, 1 kOhm, 100 pF) (Note 4).......................................................±8 kV
ESD protection on LIN, VBB (Machine Model) (Note 2)..........................................................................................±800V
ESD protection on all other pins (Human Body Model) (Note 2)............................................................................> 4 kV
Maximum Junction Temperature.............................................................................................................................150°C
Storage Temperature ..................................................................................................................................-55 to +150°C
Note 1: ISO 7637/1 load dump compliant (t < 500 ms).
2: According to JESD22-A114-B.
3: According to IBEE, without bus filter.
4: Limited by Test Equipment.
† NOTICE: Stresses abov e th os e l ist ed u nd er “M ax im um Ratings” ma y c au se permanent dam ag e to the dev ic e. Thi s
is a stres s ratin g on ly and func ti onal operat ion of the dev ic e a t thos e or any oth er co nd itio ns abo ve those indi cated in
the opera tional listi ngs of this specificati on is not impli ed. Exposure to maximum rat ing conditio ns for extend ed periods
may affect device reliability.
MCP2021/2/1P/2P
DS22018F-page 22 © 2005-2012 Microchip Technology Inc.
2.2 DC Specifications
DC Specifications
Electri cal Characteristics:
Unless otherwise indicated, all limits are specified for:
VBB = 6.0V to 18.0V
TA = -40°C to +125°C
CLOADREG = 10 µF
Parameter Sym Min. Typ. Max. Units Conditions
Power
VBB Quies cent Operati ng
Current IBBQ 115 210 µA IOUT = 0 mA,
LBUS recessive
120 215 µA VOUT = 3.3V
VBB Transmi tte r-off
Current IBBTO 90 190 µA With VREG on, transmitter
off, receiver on, F AULT/TXE
= VIL, CS = VIH
—95210µAVOUT = 3.3V
VBB Power-Down Current IBBPD —16 26µAWith VREG powered-off,
receiver on and transmitter
off, FAULT/TXE = VIH,
TXD = VIH, CS = VIL)
VBB Current with VSS
Floating IBBNOGND -1 1mAVBB = 12V, GND to VBB,
VLIN = 0-18V
Microcontroller Interface
High Level Input Voltage
(TXD, FAULT/TXE) VIH 2.0 or
(0.25VREG
+0.8)
VREG
+0.3 V
Low Level Input Voltage
(TXD, FAULT/TXE) VIL -0.3 0.15 VREG V
High Level Input Current
(TXD, FAULT/TXE) IIH -2.5 µA Input voltage = 0.8*VREG
Low Level Input Current
(TXD, FAULT/TXE) IIL -10 µA Input voltage = 0.2*VREG
Pull-up Current on Input
(TXD) IPUTXD -3.0 µA ~800 kΩ internal pull-up to
VREG @ VIH = 0.7*VREG
High Level Input Voltage
(CS/LWAKE) VIH 0.7VREG VBB V Through a curr ent- limitin g
resistor
Low Level Input Voltage
(CS/LWAKE) VIL -0.3 0.3VREG V
High Level Input Current
(CS/LWAKE) IIH 7.0 µA Input voltage = 0.8*VREG
Low Level Input Current
(CS/LWAKE) IIL 3.0 µA Input voltage = 0.2*VREG
Pull-down Current on
Input (CS/LWAKE) IPDCS 6.0 µA ~1.3MΩ internal pull-down
to VSS @ VIH = 3.5V
Note 1: Internal current limited. 2.0 ms maximum recovery time (RLBUS = 0Ω, TX = 0.4 VREG, VLBUS = VBB).
2: For design guidance only, not tested.
3: Node has to sustain the current that can flow under this condition; bus must be operational under this
condition.
© 2005-2012 Microchip Technology Inc. DS22018F-page 23
MCP2021/2/1P/2P
Bus Interface
High Level Input Voltage VIH(LBUS)0.6 VBB 18 V Recessive state
Low Level Input Voltage VIL(LBUS)-8
0.4 VBB V Dominant state
Input Hysteresis VHYS ——
0.175 VBB VVIH(LBUS) - VIL(LBUS)
Low L eve l O u tput C urre nt IOL(LBUS)40
200 mA Output voltage = 0.1 VBB,
VBB = 12V
Pull-up Current on Input IPU(LBUS)5
180 µA ~30 kΩ internal pull-up
@ VIH (LBUS) = 0.7 VBB
Short Circuit Current
Limit ISC 50 200 mA (Note 1)
High Level Outp ut
Voltage VOH(LBUS)0.8 VBB VBB VVOH(LBUS) must be at least
0.8 VBB
Low Level Output Voltage VOLLO
(LBUS)0.2 VBB V
Input Leakage Current (at
the receiver during
dominant bus level)
IBUS_PAS_DOM -1 mA Driver off,
VBUS = 0V,
VBAT = 12V
Leakage Current
(disconnected from
ground)
IBUS_NO_GND -1 +1 mA GNDDEVICE = VBAT,
0V < VBUS < 18V,
VBAT = 12V
Leakage Current
(disconnected from V BAT)IBUS 10 µA VBAT = GND,
0 < VBUS < 18V,
TA = -40°C to +85°C
(Note 3)
50 µA TA = +85°C to +125°C
Receiver Center Voltage VBUS_CNT 0.475 VBB 0.5
VBB 0.525 VBB VVBUS_CNT = ( VIL (LBUS) +
VIH (LBUS))/2
Slave Termination Rslave 20 30 47 kΩ
2.2 DC Specifications (Continued)
DC Specifications
Electri cal Characteristics:
Unless otherwise indicated, all limits are specified for:
VBB = 6.0V to 18.0V
TA = -40°C to +125°C
CLOADREG = 10 µF
Parameter Sym Min. Typ. Max. Units Conditions
Note 1: Internal current limited. 2.0 ms maximum recovery time (RLBUS = 0Ω, TX = 0.4 VREG, VLBUS = VBB).
2: For design guidance only, not tested.
3: Node has to sustain the current that can flow under this condition; bus must be operational under this
condition.
MCP2021/2/1P/2P
DS22018F-page 24 © 2005-2012 Microchip Technology Inc.
2.2 DC Specification (Continued)
FIGURE 2-1: MCP2021-500 Safe Operating Range.
DC Specifications
Electri cal Characteristics:
Unless otherwise indicated, all limits are specified for:
VBB = 6.0V to 18.0V
TA = -40°C to +125°C
CLOADREG = 10 µF
Parameter Sym Min. Typ. Max. Units Conditions
Voltage Regu lator - 5.0V
Output Volt age VOUT 4.85 5.00 5.15 V 0 mA < IOUT < 50 mA,
Load Regulation ΔVOUT2—1050mV5mA < IOUT < 50 mA
refer to Section 1.6
“Internal Voltage
Regulator”
Quiescent Current IVRQ —— 25µAIOUT = 0 mA, (Note 2)
Power Supply Ripple
Reject PSRR 50 dB 1 VPP @10-20 kHz
CLOAD = 10 µf,
ILOAD = 5 0 mA
Output Nois e Voltage eN 100 µVRMS 10 Hz – 40 MHz
CFILTER = 10 µf,
CBP = 0.1 µf, CLOAD 10 µf,
ILOAD = 5 0 mA
Shutdown Voltage VSD 3.5 4.0 V See Figure 1-8
Input Voltage to Maintain
Regulation VBB 6.0 18.0 V
Input Voltage to Turn Off
Output VOFF 4.0 4.5 V
Input Voltage to Turn On
Output VON 5.5 6.0 V
Note 1: Internal current limited. 2.0 ms maximum recovery time (RLBUS = 0Ω, TX = 0.4 VREG, VLBUS = VBB).
2: For design guidance only, not tested.
3: Node has to sustain the current that can flow under this condition; bus must be operational under this
condition.
0
10
20
30
40
50
60
-40
-34
-28
-22
-16
-10
-4
2
8
14
20
26
32
38
44
50
56
62
68
74
80
86
92
98
104
110
116
122
Temperatu re (°C)
Vol tage R egulator Load (mA )
18V DFN
18V SOIC
12V SOI C
12V DF N
© 2005-2012 Microchip Technology Inc. DS22018F-page 25
MCP2021/2/1P/2P
2.2 DC Specification (Continued)
FIGURE 2-2: MCP2021-330 Safe Operating Range.
DC Specifications
Electri cal Characteristics:
Unless otherwise indicated, all limits are specified for:
VBB = 6.0V to 18.0V
TA = -40°C to +125°C
CLOADREG = 10 µF
Parameter Sym Min. Typ. Max. Units Conditions
Voltage Regu lator - 3.3V
Output Volt age VOUT 3.20 3.30 3.40 V 0 mA < IOUT < 50 mA
Line Regulation ΔVOUT1—1050mVIOUT = 1 mA,
6.0V < VBB < 18V
Load Regulation ΔVOUT2—1050mV5mA < IOUT < 50 mA
Refer to Section 1.6
“Internal Voltage
Regulator”
Quiescent Current IVRQ —— 25µAIOUT = 0 mA, (Note 2)
Power Supply Ripple
Reject PSRR 50 dB 1 VPP @10-20 kHz
CLOAD = 10 µf,
ILOAD = 5 0 mA
Output Nois e Voltage eN 100 µVRMS
/Hz 10 Hz – 40 MHz
CFILTER = 10 µf, CBP =
0.1 µf CLOAD = 10 µf,
ILOAD = 5 0 mA
Shutdown Vol tage VSD 2.5 2.7 V See Figure 1-8
Input Voltage to Maintain
Regulation VBB 6.0 18.0 V
Input Voltage to Turn Off
Output VOFF 4.0 4.5 V
Input Voltage to Turn On
Output VON 5.5 6.0 V
Note 1: Internal current limited. 2.0 ms maximum recovery time (RLBUS = 0Ω, TX = 0.4 VREG, VLBUS = VBB).
2: For design guidance only, not tested.
3: Node has to sustain the current that can flow under this condition; bus must be operational under this
condition.
0
10
20
30
40
50
60
-40
-34
-28
-22
-16
-10
-4
2
8
14
20
26
32
38
44
50
56
62
68
74
80
86
92
98
104
110
116
122
Temp er at u r e (°C)
Voltage Regulator Load (mA)
18V DF N
18V SOIC
12V SOIC
12V DF N
MCP2021/2/1P/2P
DS22018F-page 26 © 2005-2012 Microchip Technology Inc.
FIGURE 2-3: ESR Curves for Load Capacitor Selection.
Load Capacitor [uF]
ESR Curves
ESR [ohm]
10
1
0.1
0.01
0.001
10 100 1000
10.1
Instable
Instable
Instable
Stable only
with Tantalum or
Electrolytic cap.
Stable with
Tantalum,
Electrolytic and
Ceramic cap.
© 2005-2012 Microchip Technology Inc. DS22018F-page 27
MCP2021/2/1P/2P
2.3 AC Specification
AC CHARACTERISTICS VBB = 6.0V to 18.0V; TA = -40°C to +125°C
Parameter Sym Min. Typ. Max. Units Test Conditions
Bus Interface - Constant Slope Time Parameters
Slope rising and falling
edges tSLOPE 3.5 22.5 µ s 7.3V <= VBB <= 18V
Propagation Delay of
Transmitter tTRANSPD ——4.0µstTRANSPD = max (tTRANSPDR or
tTRANSPDF)
Propagation Delay of
Receiver tRECPD ——6.0µstRECPD = max (tRECPDR or
tRECPDF)
Sym m etry of Pr opagation
Delay of Receiver rising
edge w.r.t. falling edge
tRECSYM -2.0 2.0 µs tRECSYM = max (tRECPDF -
tRECPDR)
Sym m etry of Pr opagation
Delay of Transmitter rising
edge w.r.t. falling edge
tTRANSSYM -2.0 2.0 µs tTRANSSYM = max (tTRANSPDF -
tTRANSPDR)
Time to sample of FAULT/
TXE for bu s con f li ct re port ing tFAULT ——32.5µstFAULT = max (tTRANSPD +
tSLOPE + tRECPD)
Duty Cycl e 1 @20.0 kbit/sec 39.6 %tBIT CBUS;RBUS conditions:
1nF; 1kΩ | 6.8 n F; 66 0Ω |
10 nF; 500Ω
THREC(MAX) = 0.744 x VBB,
THDOM(MAX) = 0.581 x VBB,
VBB =7.0V - 18V; tBIT = 50 µs.
D1 = tBUS_REC(MIN) / 2 x tBIT)
Duty Cycle 2 @20.0 kbit/sec 58.1 %tBIT CBUS;RBUS conditions:
1nF; 1kΩ | 6.8 n F; 66 0Ω |
10 nF; 500Ω
THREC(MAX) = 0.284 x VBB,
THDOM(MAX) = 0.422 x VBB,
VBB =7.6V - 18V; tBIT = 50 µs.
D2 = tBUS_REC(MAX) / 2 x tBIT)
Duty Cycl e 3 @10.4 kbit/sec 41.7 %tBIT CBUS;RBUS conditions:
1nF; 1kΩ | 6.8 n F; 66 0Ω |
10 nF; 500Ω
THREC(MAX) = 0.778 x VBB,
THDOM(MAX) = 0.616 x VBB,
VBB =7.0V - 18V; tBIT = 96 µs.
D3 = tBUS_REC(MIN) / 2 x tBIT)
Duty Cycle 4 @10.4 kbit/sec 59.0 %tBIT CBUS;RBUS conditions:
1nF; 1kΩ | 6.8 n F; 66 0Ω |
10 nF; 500Ω
THREC(MAX) = 0.251 x VBB,
THDOM(MAX) = 0.389 x VBB,
VBB =7.6V - 18V; tBIT = 96 µs.
D4 = tBUS_REC(MAX) / 2 x tBIT)
MCP2021/2/1P/2P
DS22018F-page 28 © 2005-2012 Microchip Technology Inc.
2.4 Thermal S pecifications
Voltage Regula tor
Bus Activity Debounce Time tBDB 5 10 20 µs Bus debounce time
Bus Activity to Voltage
Regulator Enabled tBACTVE 100 250 500 µs After bus debounce time
Voltage R egu lato r Enabl ed
to Ready tVEVR 1200 µs (Note 1)
Chip Select to Operation
Ready tCSOR 500 µs (Note 1)
Chip Select to Power-Down tCSPD ——80µs
Short-Circuit to Shut-Down tSHUTDOWN 20 100 µs
RESET Timing
VREG OK Detect to RESET
Inactive tRPU ——10.0µs
VREG OK Detect to RESET
Active tRPD ——10.0µs
Note 1: Time depends on external capacitance and load.
THERMAL CHARACTERISTICS
Parameter Symbol Typ Max Units Test Conditions
Recovery Temperature θRECOVERY +140 °C
Shutdown Temperature θSHUTDOWN +150 °C
Short Circuit Recovery Time tTHERM 1.5 5.0 ms
Thermal Package Resistances
Thermal Resistance, 8L-DFN θJA 35.7 °C/W
Thermal Resistance, 8L-PDIP θJA 89.3 °C/W
Thermal Resistance, 8L-SOIC θJA 149.5 °C/W
Thermal Resistance, 14L-PDIP θJA 70 °C/W
Thermal Resistance, 14L-SOIC θJA 95.3 °C/W
Thermal Resistance, 14L-TSSOP θJA 100 °C/W
Note 1: The maximum power dissipation is a function of TJMAX, ΘJA and ambient temperature TA. Th e maximum
allowable power dissipation at an ambient temperature is PD = (TJMAX - TA) ΘJA. If this dissipation is
exceeded, the die temperature will rise above 150°C and the MCP2021 will go into thermal shutdown.
2.3 AC Specification (Continued)
AC CHARACTERISTICS VBB = 6.0V to 18.0V; TA = -40°C to +125°C
Parameter Sym Min. Typ. Max. Units Test Conditions
© 2005-2012 Microchip Technology Inc. DS22018F-page 29
MCP2021/2/1P/2P
2.5 Timing Diagrams and Specifications
FIGURE 2-4: Bus Timing Diagram.
FIGURE 2-5: Regulator CS/LWAKE Timing Diagram.
.95VLBUS
.0.4VBB
TTRANSPDR
TRECPDR
TTRANSPDF
TRECPDF
TXD
LBUS
RXD
Internal TXD/RXD
Compare
FAULT Sampling
TFAULT TFAULT
FAULT/TXE Output Stable Stable
Stable
Match Match
Match Match Match
Hold
Value
Hold
Value
50%
50%
.50VBB
50%
50%
0.0V
TCSPD
TCSOR
CS/LWAKE
VOUT
VREG
MCP2021/2/1P/2P
DS22018F-page 30 © 2005-2012 Microchip Technology Inc.
FIGURE 2-6: Regulator BUS WAKE Timing Diagram.
FIGURE 2-7: RESET Timing Diagram .
VOUT
LBUS
0.4VBB
TVEVR
VREG
TBDB + TBACTVE
RESET
VBB
6.0V
VREG
5.0V
5.0V
4.0V
3.5V
TRPU
TRPD
TRPD
TRPU
© 2005-2012 Microchip Technology Inc. DS22018F-page 31
MCP2021/2/1P/2P
FIGURE 2-8: CS/LWAKE to RESET Timing Diagram.
FIGURE 2-9: Typical IBBQ vs. Temperature.
TCSPD
TCSOR
CS/LWAKE
VOUT
VREG
RESET
TRPU
0
0.05
0.1
0.15
0.2
-40C 25C 85C 125C
Temp erature ( °C)
Ibbq mA
Vbb = 6V
Vbb = 7.3V
Vbb = 12V
Vbb = 14.4V
Vbb = 18V
MCP2021/2/1P/2P
DS22018F-page 32 © 2005-2012 Microchip Technology Inc.
FIGURE 2-10: Typical IBBTO vs Temperature.
FIGURE 2-11: Typical IBBPD vs. Temperature.
0
0.02
0.04
0.06
0.08
0.1
0.12
0.14
0.16
0.18
-40C 25C 85C 125C
Temperature (°C)
mA
Vbb = 6V
Vbb = 7. 3V
Vbb = 12V
Vbb = 14. 4V
Vbb = 18V
0
0.005
0.01
0.015
0.02
0.025
-40C 25C 85C 125C
Temperature (°C )
Ipd (mA)
Vbb = 6V
Vbb = 7. 3V
Vbb = 12V
Vbb = 14. 4V
Vbb = 18V
© 2005-2012 Microchip Technology Inc. DS22018F-page 33
MCP2021/2/1P/2P
3.0 PACKAGING INFORMATION
3.1 Package Marking Information
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanu me ric trac ea bility code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the even t the full M icroc hip p art numb er cann ot be mark ed on one line, it w ill
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
PIN 1
NNN
PIN 1
8-Lead DFN-S (6x5x0.9 mm) Example
8-Lead DFN (4x4x0.9 mm) Example
YYWW
NNN
XXXXXX
XXXXXX
PIN 1 PIN 1
MCP2021
202150
8-Lead PDIP (300 mil) Example
XXXXXXXX
XXXXXNNN
YYWW
MCP2021 MCP2021P
2021500 2021P500
202150
E/MD
1033
256
2021500
E/MF
1033
256
3
3
2021500
E/P 256
1033
3
MCP2021 MCP2021P
2021500 2021P50
MCP2021/2/1P/2P
DS22018F-page 34 © 2005-2012 Microchip Technology Inc.
3.1 Package Marking Information (Continued)
MCP2022 MCP2022P
MCP2022-500 2022P-500
MCP2022 MCP2022P
MCP2022-500 MCP2022P-500
8-Lead SOIC (3.90 mm) Example
NNN
MCP2021 MCP2021P
2021500E 2021P50E
2021500E
SN 1033
256
3
14-Lead PDIP (300 mil) Example
14-Lead SOIC (3.90 mm) Example
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanu me ric trac ea bility code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the even t the fu ll Microc hip p art numb er ca nnot be mark ed on one line, it w ill
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
MCP2022-500
E/P
1033256
3
MCP2022-500
E/SL
1033256
3
© 2005-2012 Microchip Technology Inc. DS22018F-page 35
MCP2021/2/1P/2P
3.1 Package Marking Information (Continued)
14-Lead TSSOP (4.4 mm) Example
YYWW
NNN
XXXXXXXX
MCP2022 MCP2022P
2022500E 2022P50E
Legend: XX...X Customer-specific information
Y Year code (last digit of calendar year)
YY Year code (last 2 digits of calendar year)
WW Week code (week of January 1 is week ‘01’)
NNN Alphanu me ric trac ea bility code
Pb-free JEDEC designator for Matte Tin (Sn)
*This package is Pb-free. The Pb-free JEDEC designator ( )
can be found on the outer packaging for this package.
Note: In the even t the fu ll Microc hip p art numb er ca nnot be mark ed on one line, it w ill
be carried over to the next line, thus limiting the number of available
characters for customer-specific information.
3
e
3
e
2022500E
1033
256
MCP2021/2/1P/2P
DS22018F-page 36 © 2005-2012 Microchip Technology Inc.
8-Lead Plastic Dual Flat, No Lead Package (MD) – 4x4x0.9 mm Body [DFN]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. Package is saw singulated.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 0.80 BSC
Overall Height A 0.80 0.90 1.00
Standoff A1 0.00 0.02 0.05
Contact Thickness A3 0.20 REF
Overall Length D 4.00 BSC
Exposed Pad Width E2 0.00 2.20 2.80
Overall Width E 4.00 BSC
Exposed Pad Length D2 0.00 3.00 3.60
Contact Width b 0.25 0.30 0.35
Contact Length L 0.30 0.55 0.65
Contact-to-Exposed Pad K 0.20
D
N
E
NOTE 1
12
A3
A
A1
NOTE 2
NOTE 1
D2
1
2
E2
L
N
e
b
K
EXPOSED
PAD
TOP VIEW BOTTOM VIEW
Microchip Technology Drawing C04-131C
© 2005-2012 Microchip Technology Inc. DS22018F-page 37
MCP2021/2/1P/2P
D !"#$
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MCP2021/2/1P/2P
DS22018F-page 38 © 2005-2012 Microchip Technology Inc.
8-Lead Plastic Dual Flat, No Lead Package (MF) – 6x5 mm Body [DFN-S]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Package may have one or more exposed tie bars at ends.
3. Package is saw singulated.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 1.27 BSC
Overall Height A 0.80 0.85 1.00
Standoff A1 0.00 0.01 0.05
Contact Thickness A3 0.20 REF
Overall Length D 5.00 BSC
Overall Width E 6.00 BSC
Exposed Pad Length D2 3.90 4.00 4.10
Exposed Pad Width E2 2.20 2.30 2.40
Contact Width b 0.35 0.40 0.48
Contact Length L 0.50 0.60 0.75
Contact-to-Exposed Pad K 0.20
NOTE 2
A1
A
A3
NOTE 112
E
N
D
EXPOSED PAD
NOTE 1
21
E2
L
N
e
b
K
BOTTOM VIEW
TOP VIEW
D2
Microchip Technology Drawing C04-122
B
© 2005-2012 Microchip Technology Inc. DS22018F-page 39
MCP2021/2/1P/2P
% !"#$%&"'""($)%
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MCP2021/2/1P/2P
DS22018F-page 40 © 2005-2012 Microchip Technology Inc.
8-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units INCHES
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e .100 BSC
Top to Seating Plane A .210
Molded Package Thickness A2 .115 .130 .195
Base to Seating Plane A1 .015
Shoulder to Shoulder Width E .290 .310 .325
Molded Package Width E1 .240 .250 .280
Overall Length D .348 .365 .400
Tip to Seating Plane L .115 .130 .150
Lead Thickness c .008 .010 .015
Upper Lead Width b1 .040 .060 .070
Lower Lead Width b .014 .018 .022
Overall Row Spacing § eB .430
N
E1
NOTE 1
D
12
3
A
A1
A2
L
b1
b
e
E
eB
c
Microchip Technology Drawing C04-018B
© 2005-2012 Microchip Technology Inc. DS22018F-page 41
MCP2021/2/1P/2P
8-Lead Plastic Small Outline (SN) – Narrow, 3.90 mm Body [SOIC]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 8
Pitch e 1.27 BSC
Overall Height A 1.75
Molded Package Thickness A2 1.25
Standoff §A1 0.10 0.25
Overall Width E 6.00 BSC
Molded Package Width E1 3.90 BSC
Overall Length D 4.90 BSC
Chamfer (optional) h 0.25 0.50
Foot Length L 0.40 1.27
Footprint L1 1.04 REF
Foot Angle φ
Lead Thickness c 0.17 0.25
Lead Width b 0.31 0.51
Mold Draft Angle Top α 15°
Mold Draft Angle Bottom β 15°
D
N
e
E
E1
NOTE 1
12 3
b
A
A1
A2
L
L1
c
h
h
φ
β
α
Microchip Technology Drawing C04-057B
MCP2021/2/1P/2P
DS22018F-page 42 © 2005-2012 Microchip Technology Inc.
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© 2005-2012 Microchip Technology Inc. DS22018F-page 43
MCP2021/2/1P/2P
14-Lead Plastic Dual In-Line (P) – 300 mil Body [PDIP]
Notes:
1. Pin 1 visual index feature may vary, but must be located with the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed .010" per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units INCHES
Dimension Limits MIN NOM MAX
Number of Pins N 14
Pitch e .100 BSC
Top to Seating Plane A .210
Molded Package Thickness A2 .115 .130 .195
Base to Seating Plane A1 .015
Shoulder to Shoulder Width E .290 .310 .325
Molded Package Width E1 .240 .250 .280
Overall Length D .735 .750 .775
Tip to Seating Plane L .115 .130 .150
Lead Thickness c .008 .010 .015
Upper Lead Width b1 .045 .060 .070
Lower Lead Width b .014 .018 .022
Overall Row Spacing § eB .430
N
E1
D
NOTE 1
123
E
c
eB
A2
L
A
A1
b1
be
Microchip Technology Drawing C04-005B
MCP2021/2/1P/2P
DS22018F-page 44 © 2005-2012 Microchip Technology Inc.
14-Lead Plastic Small Outline (SL) – Narrow, 3.90 mm Body [SOIC]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. § Significant Characteristic.
3. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
4. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 14
Pitch e 1.27 BSC
Overall Height A 1.75
Molded Package Thickness A2 1.25
Standoff § A1 0.10 0.25
Overall Width E 6.00 BSC
Molded Package Width E1 3.90 BSC
Overall Length D 8.65 BSC
Chamfer (optional) h 0.25 0.50
Foot Length L 0.40 1.27
Footprint L1 1.04 REF
Foot Angle φ
Lead Thickness c 0.17 0.25
Lead Width b 0.31 0.51
Mold Draft Angle Top α 15°
Mold Draft Angle Bottom β 15°
NOTE 1
N
D
E
E1
123
b
e
A
A1
A2
L
L1
c
h
hα
β
φ
Microchip Technology Drawing C04-065B
© 2005-2012 Microchip Technology Inc. DS22018F-page 45
MCP2021/2/1P/2P
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MCP2021/2/1P/2P
DS22018F-page 46 © 2005-2012 Microchip Technology Inc.
14-Lead Plastic Thin Shrink Small Outline (ST) – 4.4 mm Body [TSSOP]
Notes:
1. Pin 1 visual index feature may vary, but must be located within the hatched area.
2. Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed 0.15 mm per side.
3. Dimensioning and tolerancing per ASME Y14.5M.
BSC: Basic Dimension. Theoretically exact value shown without tolerances.
REF: Reference Dimension, usually without tolerance, for information purposes only.
Note: For the most current package drawings, please see the Microchip Packaging Specification located at
http://www.microchip.com/packaging
Units MILLIMETERS
Dimension Limits MIN NOM MAX
Number of Pins N 14
Pitch e 0.65 BSC
Overall Height A 1.20
Molded Package Thickness A2 0.80 1.00 1.05
Standoff A1 0.05 0.15
Overall Width E 6.40 BSC
Molded Package Width E1 4.30 4.40 4.50
Molded Package Length D 4.90 5.00 5.10
Foot Length L 0.45 0.60 0.75
Footprint L1 1.00 REF
Foot Angle φ
Lead Thickness c 0.09 0.20
Lead Width b 0.19 0.30
NOTE 1
D
N
E
E1
12
e
b
c
A
A1
A2
L1 L
φ
Microchip Technology Drawing C04-087B
© 2005-2012 Microchip Technology Inc. DS22018F-page 47
MCP2021/2/1P/2P
APPENDIX A: REVIS ION HISTORY
Revision F (January 2012)
The following modifications were made to this data
sheet:
Added the MCP2021P and MCP2022P options
and related information throughout the
document.
Revision E (February 2009)
The following is the list of modifications.
1. Added Example 1-7 and Exampl e 1-8.
2. Updated Section 1.4.9 “RESET”.
3. Updated Section 1.7 “ICSP™ Consider-
ations”.
4. Updated Section 2.1 “Absolute Maximum
Ratings†”.
5. Updated Section 2.2 “DC Specification s” and
Section 2.3 “AC Specification”.
6. Added FIGURE 2-3: “ESR Curves for Load
Capacitor Selection.”.
7. Updated the Product Identification System
section.
Revision D (July 2008)
The following is the list of modifications.
1. Updated ESD specs under ‘Absolute DC’.
2. U pdated notes in Example 1-1.
3. Updated Package Outline Drawings.
Revision C (April 2008)
The following is the list of modifications.
1. Added LIN2.1 and J2602 compliance statement
to Features section.
2. Added recommended RC network for CS/
LWAKE in Example 1-1.
3. Updated 2.1 Absolute Maximum Ratings to
reflect current test results.
4. Updated 2.2 DC Specifications and 2.3 AC
Specifications to reflect current production
device.
5. Added 8-Lead SOIC Landing Pattern Outline
drawing.
Revision B (August 2007)
The following is the list of modifications:
1. Modified Block Diagram on page 2.
2. Section 1.3.5 “Transmitter-OFF Mode”:
Delete d text in 1st pa ragraph.
3. Example 1-6: Removed +5V notation.
4. Section 1.4 “Pin Descriptions: Re moved 10-
pin DFN, MSOP column from table.
5. Section 1.4.8 “Fault/TXE”: Deleted text from
2nd paragraph.
6. Section 3.0 “Packaging Information”: Added
8-lead 4x4 and 6x5 DFN and 14-lead TSSOP
packages. Updated package outline drawings
and adde d drawings for 8-lead DF N and 14-lead
TSSOP drawings.
Revision A (November 2005)
Original Release of this Document.
MCP2021/2/1P/2P
DS22018F-page 48 © 2005-2012 Microchip Technology Inc.
NOTES:
© 2005-2012 Microchip Technology Inc. DS22018F-page 49
MCP2021/2/1P/2P
PRODUCT IDENTIFICATION SYSTEM
To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.
Device: MCP2021: LIN Transceiver with Voltage Regulator; wakes up on
dominant level of LIN bus.
MCP2021T: LIN Transceiver with Voltage Regulator; wakes up on
dominant level of LIN bus.
(Tape and Reel) (SOIC only)
MCP2022: LIN Transceiver with V oltage Regulator, and RESET
pin; wakes up on dominant level of LIN bus.
MCP2022T: LIN Transc eive r with Voltage Regulator, and RESET
pin; wakes up on dominant level of LIN bus.
(Tape and Reel) (SOIC only)
MCP2021P: LIN Transceiver with V oltage Regulator; wakes up at a
falling edge of LIN bus level.
MCP2021PT: LIN Transceiver with V oltage Regulator; wakes up at a
falling edge of LIN bus level
(Tape and Reel) (SOIC only)
MCP2022P: LIN Transc eive r with Voltage Regulator, and RESET
pin; wakes up at a falling edge of LIN bus level.
MCP2022PT: LIN Transceiver with Voltage Regulator, and RESET
pin; wakes up at a falling edge of LIN bus level.
(Tape and Reel) (SOIC only)
Temperature
Range: E = -40°C to +125°C
Package: MD = Plastic Micro Small Outline (4x4), 8-lead
MF = Plastic Micro Small Outline (6x5), 8-lead
P = Plastic DIP ( 300 mil Body), 8- lead, 14-lead
SN = Plastic SOIC, (150 mil Body), 8-lead
SL = Plastic SOIC, (150 mil Body), 14-lead
ST = Plastic Thin Shrink Small Outline, 14-lead
PART NO. –X /XX
PackageTemperature
Range
Device
Examples:
a) MCP2021-330E/SN: 3.3V, 8L-SOIC pkg.
b) MCP2021-330E/P: 3.3V, 8L-PDIP pkg.
c) MCP2021-500E/MF: 5.0V, 8L-DFN-S pkg.
d) MCP2021-500E/SN: 5.0V, 8L-SOIC pkg.
e) MCP2021-500E/MD: 5.0V, 8L-DFN pkg.
f) MCP2021-330E/P: 5.0V, 8L-PDIP pkg.
g) MCP2021T-330E/SN: Ta pe and Reel,
3.3V, 8L-SOIC pkg.
h) MCP2021T-500E/MD: Tape and Reel,
5.0V, 8L-D FN pkg.
i) MCP2021T-500E/SN: Tape and Reel,
5.0V, 8L-SOIC pkg.
a) MCP2022-330E/SL: 3.3V, 14L-SOIC pkg.
b) MCP2022-330E/P: 3.3V, 14L-PDIP pkg.
c) MCP2022-500E/SL: 5.0V, 14L-SOIC pkg.
d) MCP2022-500E/P: 5.0V, 14L-PDIP pkg.
e) MCP2022T-330E/SL: Tape and Reel,
3.3V, 14L-SOIC pkg.
f) MCP2022T-500E/SL: Tape and Reel,
5.0V, 14L-SOIC pkg.
g) MCP2022T-500E/ST: Tape and Reel,
5.0V, 14L-TSSOP pkg.
MCP2021/2/1P/2P
DS22018F-page 50 © 2005-2012 Microchip Technology Inc.
NOTES:
© 2005-2012 Microchip Technology Inc. DS22018F-page 51
Information contained in this publication regarding device
applications a nd the lik e is provided only f or yo ur convenience
and may be supers ed ed by u pda t es . It is y our responsibil it y to
ensure that your application meets with your specifications.
MICROCHIP MAKES NO REPRESENTATIONS OR
WARRANTIES OF ANY KIND WHETHER EXPRESS OR
IMPLIED, WRITTEN OR ORAL, STATUTORY OR
OTHERWISE, RELATED TO THE INFORMATION,
INCLUDING BUT NOT LIMITED TO ITS CONDITION,
QUALITY, PERFORMANCE, MERCHANTABILITY OR
FITNESS FOR PURPOSE. Microchip disclaims all liability
arising from this information and its use. Use of Microchip
devices in life support and/or safety applications is entirely at
the buyer’s risk, and the buyer agrees to defend, indemnify and
hold harmless Microchip from any and all damages, claims,
suits, or expenses resulting from such use. No licenses are
conveyed, implicitly or otherwise, under any Microchip
intellectual property rights.
Trademarks
The Microchip name and logo, the Microchip logo, dsPIC,
KEELOQ, KEELOQ logo, MPLAB, PIC, PICmicro, PI C START,
PIC32 logo, rfPIC and UNI/O are registered trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
FilterLab, Hampshire, HI-TECH C, Linear Active Thermistor,
MXDEV, MXLAB, SEEVAL and The Embedded Control
Solutions Company are registered trademarks of Microchip
Technology Incorporated in the U.S.A.
Analog-for-the-Digital Age, Application Maestro, chipKIT,
chipKIT logo, CodeGuard, dsPICDEM, dsPICDEM.net,
dsPICworks, dsSPEAK, ECAN, ECONOMONITOR,
FanSense, HI-TIDE, In-Circuit Serial Programming, ICSP,
Mindi, MiWi, MPASM, MPLAB Certified logo, MPLIB,
MPLINK, mTouch, Omniscient Code Generation, PICC,
PICC-18, PICDEM, PICDEM.net, PICkit, PICtail, REAL ICE,
rfLAB, Select Mode, Total Endurance, TSHARC,
UniWinDriver, WiperLock and ZENA are trademarks of
Microchip Technology Incorporated in the U.S.A. and other
countries.
SQTP is a service mark of Microchip T echnology Incorporated
in the U.S.A.
All other trademarks mentioned herein are property of their
respective companies.
© 2005-2012, Microchip Technology Incorporated, Printed in
the U.S.A., All Rights Reserved.
Printed on recycled paper.
ISBN: 978-1-61341-884-0
Note the following details of the code protection feature on Microchip devices:
Microchip products meet the specification contained in their particular Microchip Data Sheet.
Microchip believes that it s family of products is one of the most secure families of its kind on the market today, when used in t he
intended manner and under normal conditions.
There are dishonest and possibly illegal methods used to breach the code protection feature. All of these methods, to our
knowledge, require using the Microchip products in a manner outside the operating specifications contained in Microchip’s Data
Sheets. Most likely, the person doing so is engaged in theft of intellectual property.
Microchip is willing to work with the customer who is concerned about the integrity of their code.
Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not
mean that we are guaranteeing the product as “unbreakable.
Code protection is c onstantly evolving. We a t Microc hip are co m mitted to continuously improving the code prot ect ion featur es of our
products. Attempts to break Microchip’ s code protection feature may be a violation of the Digital Millennium Copyright Act. If such acts
allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.
Microchip received ISO/TS-16949:2009 certification for its worldwide
headquarters, design and wafer fabrication facilities in Chandler and
Tempe, Arizona; Gresham, Oregon and design centers in California
and India. The Company’s quality system processes and procedures
are for its PIC® MCUs and dsPIC® DSCs, KEELOQ® code hopping
devices, Serial EEPROMs, microperiph erals, nonvolatile memory and
analog products. In addition, Microchip’s quality system for the design
and manufacture of development systems is ISO 9001:2000 certified.
DS22018F-page 52 © 2005-2012 Microchip Technology Inc.
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