AFT09MS031NR1 AFT09MS031GNR1
1
RF Device Data
Freescale Semiconductor, Inc.
RF Power LDMOS Transistors
High Ruggedness N--Channel
Enhancement--Mode Lateral MOSFETs
Designed for mobile two--way radio applications with frequencies from
764 to 941 MHz. The high gain, ruggedness and broadband performance of
these devices make them ideal for large--signal, common source amplifier
applications in mobile radio equipment.
Narrowband Performance (13.6 Vdc, IDQ = 500 mA, TA=25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
764 18.0 74.1 32
870 17.2 71.0 31
941 15.7 68.1 31
800 MHz Broadband Performance (13.6 Vdc, IDQ = 100 mA, TA=25°C, CW)
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
760 15.7 62.0 44
820 15.7 63.0 37
870 15.5 61.0 36
Load Mismatch/Ruggedness
Frequency
(MHz)
Signal
Type VSWR
Pin
(W)
Test
Voltage Result
870 (1) CW >65:1 at all
Phase Angles
1.2
(3 dB Overdrive)
17 No Device
Degradation
870 (2) 2.0
(3 dB Overdrive)
1. Measured in 870 MHz narrowband test circuit.
2. Measured in 760--870 MHz broadband reference circuit.
Features
•Characterized for Operation from 764 to 941 MHz
•Unmatched Input and Output Allowing Wide Frequency Range Utilization
•Integrated ESD Protection
•Integrated Stability Enhancements
•Wideband — Full Power Across the Band (764–870 MHz)
•225°C Capable Plastic Package
•Exceptional Thermal Performance
•High Linearity for: TETRA, SSB, LTE
•Cost--effective Over--molded Plastic Packaging
•In Tape and Reel. R1 Suffix = 500 Units, 24 mm Tape Width, 13 inch Reel.
Typical Applications
•Output Stage 800 MHz Trunking Band Mobile Radio
•Output Stage 900 MHz Trunking Band Mobile Radio
Document Number: AFT09MS031N
Rev. 1, 8/2012
Freescale Semiconductor
Technical Data
764--941 MHz, 31 W, 13.6 V
WIDEBAND
RF POWER LDMOS TRANSISTORS
AFT09MS031NR1
AFT09MS031GNR1
T O -- 2 7 0 -- 2
PLASTIC
AFT09MS031NR1
Figure 1. Pin Connections
(Top View)
Drain
Gate
Note: The backside of the package is the
source terminal for the transistor.
T O -- 2 7 0 -- 2 G U L L
PLASTIC
AFT09MS031GNR1
©Freescale Semiconductor, Inc., 2012.
A
ll rights reserved.
2
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
Table 1. Maximum Ratings
Rating Symbol Value Unit
Drain--Source Voltage VDSS --0.5, +40 Vdc
Gate--Source Voltage VGS --6.0, +12 Vdc
Operating Voltage VDD 17, +0 Vdc
Storage Temperature Range Tstg --65 to +150 °C
Case Operating Temperature Range TC--40 to +150 °C
Operating Junction Temperature Range (1,2) TJ--40 to +225 °C
Total Device Dissipation @ TC=25°C
Derate above 25°C
PD317
1.59
W
W/°C
Table 2. Thermal Characteristics
Characteristic Symbol Value (2,3) Unit
Thermal Resistance, Junction to Case
Case Temperature 81°C, 31 W CW, 13.6 Vdc, IDQ = 500 mA, 870 MHz
RθJC 0.63 °C/W
Table 3. ESD Protection Characteristics
Test Methodology Class
Human Body Model (per JESD22--A114) 2, passes 2500 V
Machine Model (per EIA/JESD22--A115) A, passes 100 V
Charge Device Model (per JESD22--C101) IV, passes 1200 V
Table 4. Moisture Sensitivity Level
Test Methodology Rating Package Peak Temperature Unit
Per JESD22--A113, IPC/JEDEC J--STD--020 3260 °C
Table 5. Electrical Characteristics (TA=25°C unless otherwise noted)
Characteristic Symbol Min Typ Max Unit
Off Characteristics
Zero Gate Voltage Drain Leakage Current
(VDS =40Vdc,V
GS =0Vdc)
IDSS — — 2 μAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 13.6 Vdc, VGS =0Vdc)
IDSS — — 1 μAdc
Gate--Source Leakage Current
(VGS =5Vdc,V
DS =0Vdc)
IGSS — — 600 nAdc
On Characteristics
Gate Threshold Voltage
(VDS =10Vdc,I
D=115μAdc)
VGS(th) 1.6 2.1 2.6 Vdc
Drain--Source On--Voltage
(VGS =10Vdc,I
D=1.2Adc)
VDS(on) —0.1 —Vdc
Forward Transconductance
(VGS =10Vdc,I
D=10Adc)
gfs —7.8 — S
1. Continuous use at maximum temperature will affect MTTF.
2. MTTF calculator available at http://www.freescale.com/rf. Select Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf.
Select Documentation/Application Notes -- AN1955.
(continued)
AFT09MS031NR1 AFT09MS031GNR1
3
RF Device Data
Freescale Semiconductor, Inc.
Table 5. Electrical Characteristics (TA=25°C unless otherwise noted) (continued)
Characteristic Symbol Min Typ Max Unit
Dynamic Characteristics
Reverse Transfer Capacitance
(VDS = 13.6 Vdc ±30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Crss —2.1 —pF
Output Capacitance
(VDS = 13.6 Vdc ±30 mV(rms)ac @ 1 MHz, VGS =0Vdc)
Coss —63 —pF
Input Capacitance
(VDS = 13.6 Vdc, VGS =0Vdc±30 mV(rms)ac @ 1 MHz)
Ciss —140 —pF
Functional Tests (1) (In Freescale Narrowband Test Fixture, 50 ohm system) VDD = 13.6 Vdc, IDQ = 500 mA, Pout =31W,f=870MHz
Common--Source Amplifier Power Gain Gps 16.0 17.2 18.5 dB
Drain Efficiency ηD68.0 71.0 — %
Load Mismatch/Ruggedness (In Freescale Test Fixture, 50 ohm system, IDQ = 500 mA)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
870 CW >65:1 at all Phase Angles 1.2
(3 dB Overdrive)
17 No Device Degradation
1. Measurement made with device in straight lead configuration before any lead forming operation is applied. Lead forming is used for gull
wing (GN) parts.
4
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
TYPICAL CHARACTERISTICS
20
1
100
0105
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
15
10
0
5
42
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Drain Current versus Drain--Source Voltage
6
2
VGS =4.0Vdc
Note: Measured with both sides of the transistor tied together.
4
3
1
108121614 18 20
IDS, DRAIN CURRENT (AMPS)
TA=25°C
2.5 Vdc
0
Crss
Ciss
Coss
300
6
7
8
9
3.0 Vdc
3.25 Vdc
3.5 Vdc
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. MTTF versus Junction Temperature -- CW
Note: MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
108
105
VDD = 13.6 Vdc
ID=2.6Amps
3.2 Amps
3.9 Amps
Measured with ±30 mV(rms)ac @ 1 MHz
VGS =0Vdc
AFT09MS031NR1 AFT09MS031GNR1
5
RF Device Data
Freescale Semiconductor, Inc.
870 MHz NARROWBAND PRODUCTION TEST FIXTURE
Figure 5. AFT09MS031NR1 Narrowband Test Circuit Component Layout — 870 MHz
C10
C9 C13
C14
B1
C15 B2
C16
C11
C12
C7
C2
L3
L2
C5
C3
L1
C4 C6
AFT09MS031N
Rev. 0
C1
VGG VDD
CUT OUT AREA
C8
Table 6. AFT09MS031NR1 Narrowband Test Circuit Component Designations and Values — 870 MHz
Part Description Part Number Manufacturer
B1, B2 RF Beads, Long 2743021447 Fair--Rite
C1 3.9 pF Chip Capacitor ATC100B3R9CT500XT ATC
C2, C14, C15 56 pF Chip Capacitors ATC100B560CT500XT ATC
C3, C4, C5, C6 10 pF Chip Capacitors ATC100B100JT500XT ATC
C7, C8 3.6 pF Chip Capacitors ATC100B3R6CT500XT ATC
C9 2.5 μF Chip Capacitor GRM31CR71H225KA88L Murata
C10, C11 0.1 μF Chip Capacitors C1206C104K1RAC--TU Kemet
C12 10,000 pF Chip Capacitor ATC200B103KT50XT ATC
C13 22 μF, 25 V Tantalum Capacitor TPSD226M025R0200 AVX
C16 330 μF, 35 V Electrolytic Capacitor MCGPR35V337M10X16--RH Multicomp
L1 8.0 nH Inductor A03TKLC Coilcraft
L2 18.5 nH Inductor A05TKLC Coilcraft
L3 5.0 nH Inductor A02TKLC Coilcraft
PCB 0.030″,εr=3.5 RO4350B Rogers
6
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
RF
INPUT
RF
OUTPUT
Z1 0.280″×0.080″Microstrip
Z2 0.490″×0.120″Microstrip
Z3 0.610″×0.320″Microstrip
Z4 0.320″×0.155″×0.620″Microstrip Taper
Z5 0.139″×0.620″Microstrip
Z6 0.225″×0.620″Microstrip
Z7 0.121″×0.620″Microstrip
Z8 0.254″×0.620″Microstrip
Z9 0.190″×0.080″Microstrip
Z10 0.040″×0.080″Microstrip
Z11 0.454″×0.520″Microstrip
Z12 0.054″×0.520″Microstrip
Z13 0.620″×0.420″×0.620″Microstrip Taper
Z14 0.433″×0.420″Microstrip
Z15 0.665″×0.420″Microstrip
Z16 0.200″×0.420″Microstrip
Figure 6. AFT09MS031NR1 Narrowband Test Circuit Schematic — 870 MHz
Table 7. AFT09MS031NR1 Narrowband Test Circuit Microstrips — 870 MHz
DescriptionMicrostripDescriptionMicrostrip
C9 C10 L1
C2
C13 C14
Z5Z4Z3Z2Z1
C1
B1
Z8Z7Z6
C3
C4
C5
Z11Z10Z9
C6
Z14Z13Z12
L2
Z16Z15
C8
L3
C7
C15 C11
B2 C12 C16
VDS
+
VGS +
AFT09MS031NR1 AFT09MS031GNR1
7
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 870 MHz
Pout, OUTPUT POWER (WATTS)
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 7. CW Output Power versus Gate--Source Voltage
25
0.5 1 1.5 2 2.5 3 4
20
5
15
10
30
Pout, OUTPUT POWER (WATTS)
4.5
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
15
16
15.5
0.01 2
ηD
Gps
30
50
40
10
20
17.5
17
16.5
18 60
70
80
0.1
ηD, DRAIN EFFICIENCY (%)
Pout
VDD = 13.6 Vdc, IDQ = 500 mA
f = 870 MHz
1
VDD = 12.5 Vdc
Pin =0.3W
18.5
19
0
Figure 8. Power Gain, CW Output Power and
Drain Efficiency versus Input Power
VDD = 13.6 Vdc, Pin =0.3W
VDD = 12.5 Vdc, Pin =0.6W
VDD = 13.6 Vdc, Pin =0.6W
35
40
45
f = 870 MHz
VDD = 13.6 Vdc, IDQ = 500 mA, Pout =31WAvg.
f
MHz
Zsource
Ω
Zload
Ω
870 0.28 -- j0.71 0.98 -- j0.52
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 9. Narrowband Series Equivalent Source and Load Impedance — 870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50 Ω
50 Ω
8
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
760--870 MHz BROADBAND REFERENCE CIRCUIT
Table 8. 760--870 MHz Broadband Performance (In Freescale Reference Circuit, 50 ohm system)
VDD = 13.6 Volts, IDQ = 100 mA, TA=25°C, CW
Frequency
(MHz)
Gps
(dB)
ηD
(%)
P1dB
(W)
760 15.7 62.0 44
820 15.7 63.0 37
870 15.5 61.0 36
Table 9. Load Mismatch/Ruggedness (In Freescale Reference Circuit)
Frequency
(MHz)
Signal
Type VSWR
Pin
(W) Test Voltage, VDD Result
870 CW >65:1 at all
Phase Angles
2.0
(3 dB Overdrive)
17 No Device
Degradation
AFT09MS031NR1 AFT09MS031GNR1
9
RF Device Data
Freescale Semiconductor, Inc.
760--870 MHz BROADBAND REFERENCE CIRCUIT
Figure 10. AFT09MS031NR1 Broadband Reference Circuit Component Layout — 760--870 MHz
C1
R1
C2 L1
C4 C5
C3
C13
C15
C14
C9
C12
C11
C10
C7
J1
C6
T O -- 2 7 0 -- 2
Rev. 1
C17
C8
C16
Q1
C19
C18
Table 10. AFT09MS031NR1 Broadband Reference Circuit Component Designations and Values — 760--870 MHz
Part Description Part Number Manufacturer
C1, C10, C11, C12 5.6 pF Chip Capacitors ATC600F5R6BT250XT ATC
C2 6.8 pF Chip Capacitor ATC600F6R8BT250XT ATC
C3 8.2 pF Chip Capacitor ATC600F8R2BT250XT ATC
C4 12 pF Chip Capacitor ATC600F120JT250XT ATC
C5 10 pF Chip Capacitor ATC600F100JT250XT ATC
C6, C7 30 pF Chip Capacitors ATC600F300JT250XT ATC
C8, C9 22 pF Chip Capacitors ATC600F220JT250XT ATC
C13, C16, C17 240 pF Chip Capacitors ATC600F241JT250XT ATC
C14, C19 10 μF Chip Capacitors GRM31CR61H106KA12L Murata
C15, C18 1 μF Chip Capacitors GRM21BR71H105KA12L Murata
J1 3 Pin Connector AMP--9--146305--0 TE Connectivity
L1 6.9 nH Inductor 0807SQ6N9 Coilcraft
Q1 RF Power LDMOS Transistor AFT09MS031NR1 Freescale
R1 62 ΩChip Resistor RG2012N--620--B--T1 Susumu
PCB 0.020″,εr=4.8 S1000--2 Shengyi
10
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
Z1, Z20 0.034″×0.060″Microstrip
Z2* 0.034″×0.380″Microstrip
Z3* 0.034″×0.215″Microstrip
Z4 0.034″×0.054″Microstrip
Z5, Z6 0.266″×0.025″Microstrip
Z7, Z9 0.266″×0.080″Microstrip
Z8 0.034″×0.050″Microstrip
Z10 0.266″×0.015″Microstrip
* Line length includes microstrip bends
Z11, Z12 0.390″×0.120″Microstrip
Z13 0.390″×0.080″Microstrip
Z14 0.034″×0.100″Microstrip
Z15 0.390″×0.200″Microstrip
Z16 0.034″×0.110″Microstrip
Z17 0.034″×0.010″Microstrip
Z18* 0.034″×0.190″Microstrip
Z19* 0.034″×0.110″Microstrip
Figure 11. AFT09MS031NR1 Broadband Reference Circuit Schematic — 760--870 MHz
Table 11. AFT09MS031NR1 Broadband Reference Circuit Microstrips — 760--870 MHz
DescriptionMicrostripDescriptionMicrostrip
RF
INPUT
RF
OUTPUT
Z2 Z3 Z10
R1
VDS
C14 C15
C11
Z4
C2
Z5 Z6
C3
Z7
C4 C5
C9
Z12
L1
C16
Z14
C8
Z15 Z16 Z17 Z18 Z19
C10
Z1
Z11
C12
Z8
VGS
C17
Z9
C6
C7
Z13 Z20
C1
C13
C18C19
AFT09MS031NR1 AFT09MS031GNR1
11
RF Device Data
Freescale Semiconductor, Inc.
TYPICAL CHARACTERISTICS — 760--860 MHz BROADBAND
REFERENCE CIRCUIT
750
Gps
f, FREQUENCY (MHz)
Figure 12. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
14
17
16.5
30
66
63
57
40
35
ηD, DRAIN
EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
16
15.5
15
14.5
770 790 810 830 850 870 890
60
Pout,OUTPUT
POWER (WATTS)
VDD = 13.6 Vdc, Pin =1W
IDQ = 100 mA
Pout
750
Gps
f, FREQUENCY (MHz)
Figure 13. Power Gain, CW Output Power and Drain
Efficiency versus Frequency at a Constant Input Power
14
17
16.5
27
66
64
60
37
32
ηD, DRAIN
EFFICIENCY (%)
ηD
Gps, POWER GAIN (dB)
16
15.5
15
14.5
770 790 810 830 850 870 890
62
Pout,OUTPUT
POWER (WATTS)
VDD = 12.5 Vdc, Pin =1W
IDQ = 100 mA
Pout
12
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
TYPICAL CHARACTERISTICS — 760--870 MHz BROADBAND
REFERENCE CIRCUIT
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
Figure 14. CW Output Power versus Gate--Source Voltage
60
12345
40
10
30
20
Pout, OUTPUT POWER (WATTS)
f = 820 MHz
VDD = 13.6 Vdc, Pin =1W
VDD = 13.6 Vdc, Pin =0.5W
VDD = 12.5 Vdc
Pin =0.5W
Detail A
Figure 15. Power Gain, CW Output Power and Drain
Efficiency versus Input Power and Frequency
Pin, INPUT POWER (WATTS)
Gps, POWER GAIN (dB)
12
15
14
0.03 2
18
17
16
0.1
820 MHz
VDD = 13.6 Vdc
IDQ = 100 mA
1
Gps
ηD, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (WATTS)
50
VDD = 12.5 Vdc, Pin =1W
13
870 MHz
760 MHz
870 MHz
820 MHz
760 MHz
760 MHz
820 MHz
870 MHz
30
50
40
10
20
60
70
40
0
20
60
120
80
100
ηD
Pout
0
0
VGS, GATE--SOURCE VOLTAGE (VOLTS)
5
0.4 0.8 1.2 1.6 2
3
2
1
Pout, OUTPUT POWER (WATTS)
4
Detail A
f = 820 MHz
VDD = 13.6 Vdc
Pin =1W VDD = 12.5 Vdc
Pin =1W
VDD = 12.5 Vdc
Pin =0.5W
VDD = 13.6 Vdc
Pin =0.5W
AFT09MS031NR1 AFT09MS031GNR1
13
RF Device Data
Freescale Semiconductor, Inc.
760--870 MHz BROADBAND REFERENCE CIRCUIT
Zsource
f = 760 MHz
f = 870 MHz
Zo=2Ω
Zload
f = 760 MHz
f = 870 MHz
VDD = 13.6 Vdc, IDQ = 100 mA, Pout =31WAvg.
f
MHz
Zsource
Ω
Zload
Ω
760 0.85 -- j1.31 0.80 -- j0.92
770 0.80 -- j1.30 0.78 -- j0.88
780 0.75 -- j1.28 0.78 -- j0.85
790 0.69 -- j1.26 0.76 -- j0.81
800 0.65 -- j1.24 0.76 -- j0.78
810 0.59 -- j1.21 0.72 -- j0.75
820 0.55 -- j1.18 0.70 -- j0.73
830 0.51 -- j1.15 0.67 -- j0.70
840 0.46 -- j1.11 0.62 -- j0.66
850 0.42 -- j1.01 0.57 -- j0.62
860 0.39 -- j1.02 0.52 -- j0.57
870 0.36 -- j0.97 0.48 -- j0.52
Zsource = Test circuit impedance as measured from
gate to ground.
Zload = Test circuit impedance as measured from
drain to ground.
Figure 14. Broadband Series Equivalent Source and Load Impedance — 760--870 MHz
Input
Matching
Network
Device
Under
Test
Output
Matching
Network
Zsource Zload
50 Ω
50 Ω
14
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
PACKAGE DIMENSIONS
AFT09MS031NR1 AFT09MS031GNR1
15
RF Device Data
Freescale Semiconductor, Inc.
16
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
AFT09MS031NR1 AFT09MS031GNR1
17
RF Device Data
Freescale Semiconductor, Inc.
18
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
AFT09MS031NR1 AFT09MS031GNR1
19
RF Device Data
Freescale Semiconductor, Inc.
20
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
PRODUCT DOCUMENTATION, SOFTWARE AND TOOLS
Refer to the following documents, software and tools to aid your design process.
Application Notes
•AN1907: Solder Reflow Attach Method for High Power RF Devices in Over--Molded Plastic Packages
•AN1955: Thermal Measurement Methodology of RF Power Amplifiers
•AN3263: Bolt Down Mounting Method for High Power RF Transistors and RFICs in Over--Molded Plastic Packages
•AN3789: Clamping of High Power RF Transistors and RFICs in Over--Molded Plastic Packages
Engineering Bulletins
•EB212: Using Data Sheet Impedances for RF LDMOS Devices
Software
•Electromigration MTTF Calculator
•RF High Power Model
•.s2p File
Development Tools
•Printed Circuit Boards
For Software and Tools, do a Part Number search at http://www.freescale.com, and select the “Part Number” link. Go to the
Software & Tools tab on the part’s Product Summary page to download the respective tool.
REVISION HISTORY
The following table summarizes revisions to this document.
Revision Date Description
0May 2012 •Initial Release of Data Sheet
1Aug. 2012 •Load Mismatch/Ruggedness tables: changed output power to input power to clarify the conditions used
during test, p. 1, 8
•Fig. 10, Broadband Reference Circuit Component Layout — 760--870 MHz: added C18 and C19;
replaced L1 with R1 and L2 with L1, p. 9
•Table 10, Broadband Reference Circuit Component Designations and Values — 760--870 MHz: changed
C14 description from 0.10 μFto10μF and part number from GRM21BR71H104KA01B to
GRM31CR61H106KA12L; changed C15 description from 0.01 μFto1μF and part number from
GRM21BR72A103KA01B to GRM21BR71H105KA12L; changed C17 description from 22 pF to 240 pF
and part number from ATC100A220JT150XT to ATC600F241JT250XT; added C18 and C19; replaced L1
with R1 and L2 with L1, p. 9
•Fig. 11, Broadband Reference Circuit Schematic — 760--870 MHz: added C18 and C19; replaced L1 with
R1 and L2 with L1, p. 10
Modifications to Fig. 10, Table 10 and Fig. 11 will improve stability of the test circuit and improve performance
under a modulated signal, p. 9, 10
AFT09MS031NR1 AFT09MS031GNR1
21
RF Device Data
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software
implementers to use Freescale products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits based on the
information in this document.
Freescale reserves the right to make changes without further notice to any products
herein. Freescale makes no warranty, representation, or guarantee regarding the
suitability of its products for any particular purpose, nor does Freescale assume any
liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation consequential or incidental
damages. “Typical” parameters that may be provided in Freescale data sheets and/or
specifications can and do vary in different applications, and actual performance may
vary over time. All operating parameters, including “typicals,” must be validated for
each customer application by customer’s technical experts. Freescale does not convey
any license under its patent rights nor the rights of others. Freescale sells products
pursuant to standard terms and conditions of sale, which can be found at the following
address: freescale.com/SalesTermsandConditions.
Freescale, the Freescale logo, AltiVec, C--5, CodeTest, CodeWarrior, ColdFire,
C--Ware, Energy Efficient Solutions logo, Kinetis, mobileGT, PowerQUICC, Processor
Expert, QorIQ, Qorivva, StarCore, Symphony, and VortiQa are trademarks of
Freescale Semiconductor, Inc., Reg. U.S. Pat. & Tm. Off. Airfast, BeeKit, BeeStack,
ColdFire+, CoreNet, Flexis, MagniV, MXC, Platform in a Package, QorIQ Qonverge,
QUICC Engine, Ready Play, SafeAssure, SMARTMOS, TurboLink, Vybrid, and Xtrinsic
are trademarks of Freescale Semiconductor, Inc. All other product or service names
are the property of their respective owners.
E2012 Freescale Semiconductor, Inc.
How to Reach Us:
Home Page:
freescale.com
Web Support:
freescale.com/support
Document Number: AFT09MS031N
Rev. 1, 8/2012
