Rev.7 May 30, 2006 page 1 of 4
HL6354MG/55MG
Low Operating Current Visible Laser Diode ODE-208-007G (Z)
Rev.7
May 30, 2006
Description
The HL6354MG/55MG are 0.63 µm band AlGaInP laser diodes with a multi-quantum well (MQW) structure. They are
suitable as light sources for laser levelers, laser scanners and optical equipment for measurement.
Features
• Visible light output : 635 nm Typ
• Single longitudinal mode
• Optical output power : 5 mW CW
• Low operating current : 27 mA Typ
• Low operati ng volta ge : 2. 4 V Max
• Operating temperature : +50°C
• TM mode oscillation
LDPD
13
2
Internal Circuit
• HL6354MG
Internal Circuit
• HL6355MG
Package Type
• HL6354MG/55MG: MG
LD
3
2
PD
1
Absolute Maximum Ratings
(TC = 25°C)
Item Symbol Ratings Unit
Optical output power PO 7 mW
LD reverse voltage VR(LD) 2 V
PD reverse voltage VR(PD) 30 V
Operating temperature Topr –10 to +50 °C
Storage temperature Tstg –40 to +85 °C
Optical and Electrical Characteristics
(TC = 25°C)
Item Symbol Min Typ Max Unit Test Conditions
Threshold current Ith — 20 27 mA —
Operating current IOP — 27 36 mA PO = 5 mW
Operating voltage VOP — 2.2 2.4 V PO = 5 mW
Beam divergence
parallel to the junction θ// 6 8 10 ° PO = 5 mW
Beam divergence
perpendicular to the junction θ⊥ 20 25 30 ° PO = 5 mW
Lasing wavelength λp 630 635 640 nm PO = 5 mW
Monitor current IS 0.15 0.40 0.60 mA PO = 5 mW, VR(PD) = 5 V
HL6354MG/55MG
Rev.7 May 30, 2006 page 2 of 4
Typical Characteristic Curves
Slope efficiency, η
S
(mW/mA)
Case temperature, T
C
(°C)
Slope Efficiency vs. Case Temperature
1.2
1.0
0.6
0.8
0.4
0010 20 30 40 50
Threshold current, Ith (mA)
Case temperature, T
C
(°C)
Threshold Current vs. Case Temperature
05040
302010
100
10
0.2
20
040302010
10
Optical output power, P
O
(mW)
0
Forward current, I
F
(mA)
Optical Output Power vs. Forward Current
50 60
8
4
T
C
= 0°C
50°C
Lasing Wavelength, λp (nm)
Case temperature, T
C
(°C)
Wavelength vs. Case Temperature
0302010
645
635
630
40
640
P
O
= 5mW
50
625
Relative intensity
Angle, θ ( ° )
Far Feild Pattern
–40 –100 102030–20–30 40
1.0
0.8
0.6
0.4
0.2
0
P
O
= 5mW
T
C
= 25°C
Perpendicular
Monitor current, Is (mA)
0
Case temperature, T
C
(°C)
50
10 40
3020
0.5
0.4
0.3
0.2
0
Monitor Current vs. Case Temperature
6
2
40°C
25°C 50
0.1
P
O
= 5 mW
V
R(PD)
= 5 V
Parallel
HL6354MG/55MG
Rev.7 May 30, 2006 page 3 of 4
Package Dimensions
OPJ Code
JEDEC
JEITA
Mass
(reference value)
LD/MG
—
—
0.3 g
1
2
3
5.6 +0
–0.025
φ
1.0 ± 0.1
(0.4)
(90˚)
1.6 ± 0.2
φ
0.4 +0.1
–0
φ
φ4.1 ± 0.3
3.55 ± 0.1
0.25
Glass
1.27
φ
3 – 0.45 ± 0.1
6.5 ± 1.0
1.2 ± 0.1 2.3 ± 0.2
φ
123
2.0 ± 0.2
Emitting Point
As of July, 2002
Unit: mm
HL6354MG/55MG
Rev.7 May 30, 2006 page 4 of 4
Cautions
1. Opnext Japan,Inc.(OPJ) neither warrants nor grants lice nses of any our rights or any third part y’s pa t ent, copyright,
trademark, or other intellectual prop erty rights for information contained in this document. OPJ bears no
responsibility for problems that may arise with third party’s rights, including intellectual property rights, in
connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have received the
latest product standards or specifications before final design, purchase or use.
3. OPJ makes every attempt to ensure that its products are of high quality and reliability. However, contact our sales
office before using the product in an application that demands especially high quality and reliability or where its
failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace,
aeronautics, nuclear power, combustion control, transportatio n, traffic, safety equipment or medical equipment for
life support.
4. Design your application so that the product is used within the ranges guaranteed by OPJ particularly for maximum
rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics.
OPJ bears no respo nsibility for failure or damage when used beyond the guaranteed ranges. Even within the
guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and
employ systemic measures such as fail-safes, so that the equipment incorporating OPJ product does not cause bodily
injury, fire or other consequential damage due to operation of the OPJ product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written
approval from OPJ.
7. Contact our sales office for any questions regarding this document or OPJ products.
1. The laser light is harmful to human body especially to eye no matter what directly or indirectly. The laser beam
shall be observed or adjusted through infrared camera or equivalent.
2. This product contains gallium arsenide (GaAs), which may seriously endanger your health even at very low doses.
Please avoid treatment which may create GaAs powder or gas, such as disassembly or performing chemical
expe riments, when you handle the prod uct.
When disposing of the product, please follow the laws of your country and separate it from other waste such as
industrial waste and household garbage.
3. Definition of items shown in this CAS is in accordance with that shown in Opto Device Databook issued by OPJ
unless otherwise specified.
Sales Offices
Device Business Unit Opnext Japan, Inc.
Takagi Bldg., 3F, 1-3-9, Iwamoto-cho, Chiyoda-ku, Tokyo 101-0032 Japan
Tel: (03) 3865-5591
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©2007 Opnext Japan, Inc., All rights reserved. Printed in Japan.
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