Edition April 29, 1997 6251-425-1PD PRELIMINARY DATA SHEET HAL556, HAL566 Hall Effect Sensor ICs MICRONAS INTERMETALLHAL556, HAL566 PRELIMINARY DATA SHEET Hall Effect Sensor IC in CMOS technology Features: current output for two-wire application operates from 4 V to 24 V supply voltage switching offset compensation at 120 kHz ~ overvoltage and reverse-voltage protection extremely robust against mechanical stress operates with magnetic fields from DC to 10 kHz - on-chip temperature compensation circuitry mini- mizes shifts in on and off points and hysteresis over temperature and supply voltage - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of hystere- sis EMC corresponding to DIN 40839 Specifications HAL556 switching type: unipolar, two-wire sensor turns to high current with magnetic south pole on branded side, turns to low current if magnet removed HAL566 switching type: unipolar, two-wire sensor turns to low current with magnetic south pole on branded side, turns to high current if magnet removed Marking Code Type Temperature Range E Cc HAL556S, HAL556UA 556E 556C HALS566S, HALS566UA 566E 566C Operating Junction Temperature Range E: Ty = 40 C to +100 C C: T; =0 C to +100 C Designation of Hall Sensors HAL XXXPP-T *s- Temperature Range: E or C Package: UA for TO-92UA, S for SOT-89A Type: 556,566 Example: HAL566UA-E Type: 566 Package: TO-92UA Temperature Range: T; = 40 C to +100 C Solderability Package SOT-89A: according to lEC68-2-58 ~ Package TO-92UA: according to IEC68-2-20 Fig. 1: Pin configuration HAL5x6 Vop Reverse Temperature i 0 Voltage & i Dependent -- Contr 1 Overvoltage Bias entre Protection Hall Piate Comparator -} Switch [+ > | Source Clock GND | o+ zt Fig. 2: HAL5x6 block diagram MICRONAS INTERMETALLPRELIMINARY DATA SHEET HAL556, HAL566 Functional Description The temperature-dependent bias increases the supply voltage of the hall plates and adjusts the switching points to the decreasing induction of magnets at higher temper- atures. Magnetic offset caused by mechanical stress is compensated for by using the switching offset com- pensation technique. Therefore, an internal oscillator provides a two phase clock. The hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and momentary hall voltages are averaged and compared with the actual switching point. Subsequently, the supply current level switches to the appropriate state. The amount of time elapsed from crossing the magnetic switch level to switching of the current level can vary between zero and 1/fos-. Shunt protection devices clamp voltage peaks at the Vpp-Pin together with external series resistors. Reverse current is limited at the Vpp-Pin by an internal series resistor up to-15 V. fose Wiggg = 8.3 US Fig. 3: Timing diagram (example: HAL566) Outline Dimensions sensitive area position of hall sensor referenced to the center of package x=0+0.1mm y =0.44+0.1mm (0.25 mm x 0.12 mm) top view ls max. 0.05 9 og Fig. 4: Plastic Smalt Outline Transistor Package (SOT-89A) . Weight approximately 0.04 g Dimensions in mm 4.5701 4.0610.1 _ sensitive area position of halt sensor referenced to the center of package x=0+0.1mm y=0.6+0.1mm (0.25 mm x 0.12 mm) re 0.36 1.27}1.27 2.54 branded side Fig. 5: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm MICRONAS INTERMETALLHAL556, HAL566 PRELIMINARY DATA SHEET Absolute Maximum Ratings Symbol Parameter Pin No. Min. Max. Unit Vop Supply Voltage 1 -151) 282) V lppz Supply Current through 1 -502) 502) mA Protection Device -3009) 3009) mA Ts Storage Temperature Range -65 150 C Ty Junction Temperature Range 40 150 C 1)-18 V with 100 series resistor at pin 1 (-16 V with 30 Q series resistor) as long as Tjmax is not exceeded. 2) as long as Tymax is not exceeded 3)t<2 ms Stresses beyond those listed in the Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the Recommended Operating Conditions/Characteristics of this specification is not implied. Exposure to absolute maxi- mum ratings conditions for extended periods may affect device reliability. Recommended Operating Conditions Symbol Parameter Pin No. Min. Typ. Max. Unit Vpp Supply Voltage 1 4 - 24 Vv ty Duty Cycle 1/100 ton Supply Time 30 - us Ta Ambient Temperature -40 851) C Pulsed mode of supply is recommended for operation at high ambient temperatures to keep junction temperature low. 1) with pulsed mode of supply, ty 21/6 and tp, <1 ms (see also application note) MICRONAS INTERMETALLPRELIMINARY DATA SHEET HAL556, HAL566 Electrical Characteristics at T) = 40 C to +100 C , Vpp = 4 V to 24 V, as not otherwise specified Typical Characteristics for Tj = 25 C and Vpp = 12 V Symbol Parameter Pin No. Min. Typ. Max. Unit Test Conditions IpDiow Supply Current 1 2.6 3.5 5 mA Ty=25C, B>Borr 1) Ty =25C,B<B8orr 2) Ippiow Supply Current 1 1.9 3.5 6 mA B>Borr " B<Borr 2) IDDhigh Supply Current 1 12 15.5 19 mA B<Bon 1) B> Bon 2) fose Internal Oscillator - 90 120 150 kHz Ty = 25C, Chopper Frequency Vop = 4.5 V to 24V fosc Internal Oscillator Chopper Fre- | 75 120 165 kHz Ty =-30 C to 100 C, quency over Temperature Range Vpp = 4 V to 24 V ten(o) Enable Time of Output after 1 20 30 ps 3) Setting of Vpp t Output Rise Time 1 400 1600 ns Vop = 12 V, Rg = 30 Q ty Output Fall Time 1 400 1600 ns Vpp = 12 V, Rg = 30 Q Rinse Thermal Resistance Junction - - 150 200 KAW Fiberglass Substrate case to Substrate Backside 30 mm x 10 mm x 1.5mm, SOT-89A pad size see Fig. 7 Ringa Thermal Resistance Junction - - 150 200 KAV case to Soldering Point TO-92UA 1) Borr > Bon for HAL566 2) Bon > Borr for HALS56 3)B < Bon 2mT; B > Borg + 2mT for HAL566 B < Boge 2mT; B > Bon + 2mT for HALS56 MICRONAS INTERMETALLHAL556, HAL566 PRELIMINARY DATA SHEET Magnetic Characteristics at T) = 40 C to +100 C, Vpp = 4 V to 24 V, Typical Characteristics for Vpp = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package. Parameter 40C 25C 100 C Unit Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. On point Bon HAL556 3.4 5.9 7.7 3.4 5.5 7.2 3.25 5.1 7 mT HALS566 21 3.8 5.9 2 3.5 5.7 1.85 3.3 5.7 mT Off point Borr HALS56 2.1 3.8 5.9 2 3.5 5.7 1.85 3.3 5.7 mT HALS66 3.4 5.9 77 3.4 5.5 7.2 3.25 5.1 7 mT Hysteresis Buys HAL556 | 0 1.9 2.8 0 1.3 27 0 0.7 2.6 mT HALS566 | 0 1.9 2.8 0 1.3 2.7 0 0.7 2.6 mT Magnetic Offset (Bon + Borr V2 HAL556 | - 48 - 3 45 6.2 - 4.18 - mT HALS566 | - 48 - 3 45 6.2 - 4.18 - mT 5.0 Supply Current oe : i 20 1 I : | | le Bon min Buys Borr max _q7- 10 Fig. 6: Definition of magnetic switching points and Fig. 7: Recommended pad size SOT-89A hysteresis (example: HAL566) Dimensions in mm 6 MICRONAS INTERMETALLPRELIMINARY DATA SHEET HAL556, HAL566 Note: In the following diagrams Magnetic switch points versus ambient temperature on pages 7 and 8, the curves for Bon, Bon, Bors Ipp, 2Nd fos. refer to ambient temperature. Magnetic switching points versus supply voltage mT HAL566 6 Bon Borr |__| Bore! __ 4 rel 3 Bon es Ta =25 ic 1 + Ta = 100C 0 3 35 40 45 50 55 60V ~ Voo Magnetic switching points Magnetic switching points versus supply voltage versus temperature mr HAL566 mt HAL566 6 6 Bon +. Bore Bon P| BOFF Borr 5 Wo Borr L | . Pm] pL | MJ aT; PS Ph] ~~ ~~ IN 4 Ps XN 4 > ~ ~~. ps a Lh See SN 3 = [~ <I oS 3 Bon 3 += ON 2 a= 40 C 2 Voo=4V A= 25 C Yon = 12 1 + Ta= 100C 1 b- + Von = 24 V 0 0 0 5 10 15 20 25 30 V -60-40-20 0 20 40 60 80 100 120C ~ Vop + T, MICRONAS INTERMETALLHAL556, HAL566 PRELIMINARY DATA SHEET Supply current versus supply voltage mA HAL5x6 -20 -15-10 - 0 5 10 15 20 25 WV Vop Supply current versus ambient temperature mA HAL5x6 Ibo 0 -60-40-20 0 20 40 60 80 100 120C Ta Supply current versus supply voltage mA HAL5x6 Ipp Ta = 40 A = | | me be ae Ta = 100 ot Internal chopper frequency versus ambient temperature kHz HALSx6 150 140 130 fose 120 110 100 90 80 70 60 50 40 30 20 10 0 -60~40-20 0 20 40 60 80 100 120C _ Ta MICRONAS INTERMETALLPRELIMINARY DATA SHEET HAL556, HAL566 Application Note For electromagnetic immunity, it is recommended to ap- ply a 4.7 nF capacitor between Vpp (pin 1) and Ground (pin 2). For automotive applications, a 100 Q series resistor to pin 1 is recommended; 30 Q of resistance should be placed close to pin 1. The series resistor and the capacitor should be placed as close as possible to the IC. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature Ty) is higher than the temperature outside the package (ambient tem- perature Ta). Ty=Ta+AT At static conditions and continuous supply, the following equations are valid: for SOT-89A: AT=Ipp* Vpp * Rihusp for TO-92UA: AT =Ipp* Vpp* Rina For typical values, use the typical parameters. For worst case calculation, use the max. parameters for Ipp and Rin; and the max. value for Vpp from the application. Due to the range of Ippnigh, self-heating can be critical. The junction temperature can be reduced with pulsed supply voltage. For supply time in the range of 30 ps to 1 ms, the following equation can be used: AT = Ipp * Vop * Rh * tv Test Circuits for Electromagnetic Compatibility Test pulses Veyc corresponding to DIN 40839 Fig. 8: Test circuit MICRONAS INTERMETALLHAL556, HAL566 PRELIMINARY DATA SHEET 10 MICRONAS INTERMETALLPRELIMINARY DATA SHEET HAL556, HAL566 MICRONAS INTERMETALL 11HAL556, HAL566 PRELIMINARY DATA SHEET Data Sheet History 1. Preliminary data sheet: HAL556, HAL566 Two- Wire Hall Effect Sensor ICs, April 29, 1997, 6251-425-1PD. First release of the preliminary data sheet. MICRONAS INTERMETALL GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice @ intermetall.de Internet: http:/Awww.intermetall.de Printed in Germany by Systemdruck+Verlags-GmbH, Freiburg (04/97) Order No. 6251-425-1PD All information and data contained in this data sheet are with- out any commitment, are not to be considered as an offer for conclusion of a contract nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery dates are ex- clusively subject to our respective order contirmation form; the same applies to orders based on development samples deliv- ered. By this publication, MICRONAS INTERMETALL GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Reprinting is generally permitted, indicating the source. How- ever, our prior consent must be obtained in all cases. 12 MICRONAS INTERMETALL