aT mee nine 1 hem nett Ac SE EE BY pe auegu7y oo27as4 o i 3469674 FAIRCHILD SEMICONDUCTOR : B4D 27854 D Lat criti | FAIRCHILD A Schlumberger Company Description These devices are n-channel, enhancement mode, power MOSFETs designed especially for high speed applications, such as switching power supplies, converters, AC and DC motor controls, relay and solenoid drivers and other pulse circuits. IRF120-123/IRF520-523 7- 37-4 MTP10N08/10N10 N-Channel Power MOSFETs, 11 A, 60-100 V Power And Discrete Division TO-2044A TO-220AB S Low Rosion) Z S E Vas Rated at +20 V isoonzoF 1sc0010F + fe Von Species a Elevate Tamperaue IRF 120 InFs20 e Low Drive Requirements ineies Iepees @ Ease of Paralleling MTP10Nos MTP10N10 Product Summary Ip at [Ip at Part Number Voss Ros(on) Te = 26C Te = 100C Case Style IRF120 100 V 0.30 2 8.0 A 5.0 A TO-204AA IRF121 60 V 0.30 2 8.0 A 5.0 A IRF122 100 V 0.40 2 7.0 A 40A IRF123 60 V 0.40 Q TOA 4.0A IRF520 100 V 0.30 2 8.0A 5OA TO-220AB IRF5214 60 V 0.30 2 8.0 A 5.0 A IRF522 100 V 0.40 2 7.0 A 4.0 A IRF523 60 V 0.40 2 TOA 4.0 A MTP10NO8 80 V 0.33 2 i0A 64 A MTP10N10 100 V 0.33 2 10 A 64 A Notes For information concerning connection diagram and package outline, refer to Section 7. 2-67G4 DEM S465674 0027855 1 i _ 3469674 FAIRCHILD SEMICONDUCTOR 84D 27855 D IRF 120-123/IRF520-523 MTP10N08/10N10 .T-39-11 | Maximum Ratings Rating IRF 120/122 Rating IRF520/522 Rating IRF122/123 Symbol Characteristic MTP10N10 MTP10NO08 IRF522/523 Unit Voss Drain to Source Voltage! 100 80 60 v Vocr Drain to Gate Voltage! 100 80 60 v Res = 20 k& Vas Gate to Source Voltage +20 +20 +20 Vv : Ty, Tstg | Operating Junction and -55 to +150 -55 to +150 ~55 to +150 C : Storage Temperatures ' Th Maximum Lead Temperature 275 275 275 C for Soldering Purposes, 1/8 From Case for 5 s Maximum Thermal Characteristics IRF 120-123/IRF520-523 MTP10N08/10 : Rac Thermal Resistance, 3.12 1.67 C/W Junction to Case Roa Thermal Resistance, 30/80 80 C/W Junction to Ambient Pp Total Power Dissipation 40 75 Ww : at Tce = 26C i IDM Pulsed Drain Current? 20 32 A Electrical Characteristics (Tc = 25C unless otherwise noted) Symbol Characteristic | Min | Max | Unit | Test Conditions Off Characteristics Vieryoss | Drain Source Breakdown Voltage! Vv Veg =0 V, Ip = 250 vA IRF120/122/520/522/ 100 MTPi0N10 MTP10N08 80 IRF121/123/521/523 60 loss Zero Gate Voltage Drain Current 250 BA Vos = Rated Voss, Vag = 0 V 1000 pA Vos = 0.8 x Rated Voss, Veg =0 V, Te = 126C lass Gate-Body Leakage Current nA Vas =+20 V, Vpg=0 V IRF120-123 100 IRF520-523/MTP10N08/10 +500 2-68way | re 4 De Bayes O02785b 3 i . 3469674 FAIRCHILD SEMICONDUCTOR B4D 27856 IRF120-123/IRF520-523 MTP 10N08/10N10 ; 7-39-11 Electrical Characteristics (Cont.) (Tc = 25C unless otherwise noted) Symbol! Characteristic | Min Max | Unit | Test Conditions On Characteristics Vasa) Gate Threshold Voltage v IRF120-123/IRF520-523 2.0 4.0 Ip = 250 pA, Vos = Vas MTP10N08/10N10 2.0 45 Ip=1 mA, Vos = Ves Roston) | Static Drain-Source On-Resistance* 2 Vag = 10 V IRF120/121/520/521 0.30 Ip=40 A MTP10N08/10N10 0.33 Ip=50A IRF122/123/522/523 0.40 Ilp=4.0 A i Vps(en) | Drain-Source On-Voltage* Ves = 10 V; Ip = 10.0 A MTP 10N08/10N10 4.0 Vv 3.3 Vv Ves= 10 V, Ip=5.0A Tg = 100C ts Forward Transconductance 415 S$ @) Vos = 10 V, Ip=4.0 A Dynamic Characteristics Ciss Input Capacitance 600 pF Vps = 25 V, Vag =0 V Coss Output Capacitance 400 pF f= 1.0 MHz Ciss Reverse Transfer Capacitance 100 pF Switching Characteristics (Tc = 25C, Figures 1, 2 . taon) Turn-On Delay Time 40 ns Vpp = 50 V, Ip=4.0 A t, Rise Time 70 ns pos = to Raen = 50 92 taofty Turn-Off Delay Time 100 ns tf Fall Time 70 ns Qg Total Gate Charge 15 nc Veas=10 V, Ilp=i0 A Vpp = 50 V Symbol Characteristic Typ Max Unit Test Conditions : Source-Drain Diode Characteristics ! Vsp Diode Forward Voltage i IRF120/121/520/521 25 Vv Ig = 8.0 A; Vag =0 V IRF122/123/522/523 2.3 Vv Ig = 7.0 A; Vag =0 V | te Reverse Recovery Time 280 ns Ig = 4.0 A; dig/dt = 25 A/uS Notes 1.Ty = 425C to + 150C 2. Pulse width limited by Ty 3. Switching time measurements performed on LEM TR-58 test equipment. 2-69 EB21 PCT 7 1 TY VNC CTE y MESA 0 OWN Me LL naan 3469674 FAIRCHILD SEMICONDUCTOR ay De Bi syen74 oo27857 5 I IRF 120-123/IRF520-523 MTP10N08/10N10 7-39-11 Typical Electrical Characteristics Figure 1 Switching Test Circuit VIN PULSE GENERATOR. r | | | | | | -- | Yoo AL Vout 1 L cROESOF Typical Performance Curves Figure 3 Output Characteristics 10 Ves= 10 V 80u8 PULSE t E = g 6 > o Zz F 4 a i 2 2 6V sv o 1 2 3 4 5 VosDRAIN TO SOURCE VOLTAGEV PCOseeoF Figure & Transfer Characteristics 14 12 o Ty= 125C IpDRAIN CURRENTA a x o a 4 5 6 7 8 9 10 VosGATE TO SOURCE VOLTAGEV PCOseEOF Figure 2 Switching Waveforms OUTPUT, Vout INVERTED INPUT, Vin Wrooeocr Figure 4 Static Drain to Source Resistance vs Drain Current Vas= 10 V Posion-STATIC DRAIN TO SOURCE RESISTANCE{O 0 2 2 6 8 10 12 IbORAIN CURRENTA Poose7or Figure 6 Temperature Variation of Gate to Source Threshold Voltage NORMALIZED GATE THRESHOLD VOLTAGE -50 9 50 100 150 T,JUNCTION TEMPERATUREC PoseaF 2-70 E . i &ane ae batrmet enue aitbee beep wer ua _ 3469674 FAIRCHILD SEMICONDUCTOR gy pe Bsunsezy Ooa7458 9 tt IRF 120-123/IRF520-523 MTP10N08/10N10 7-39-11 Typical Performance Curves (Cont.) Figure 7 Capacitance vs Drain to Source Voltage 103 CCAPACITANCEpF tot 10* 2 5 101 2 . 18 VigDRAIN TO SOURCE VOLTAGEV PcossonF Figure 9 Forward Biased Safe Operating Area for IRF120-123 And IRF520-523 Ig~-DRAIN CURRENT--A 2 10-1 10 * ' 10 2 s 18 VoeORAIN TO SOURCE VOLTAGEV Figure 11 Forward Biased Safe Operating Area for MTP10N08/10N10 2 REGION MAY BE BY to! (pDRAIN CURRENTA 10-1 108 102 VosDRAIN TO SOURCE VOLTAGEV Poss Figure 8 Gate to Source Voltage vs Total Gate Charge a Vos--GATE TO SOURCE VOLTAGEV 0 5 10 18 20 25 Q,TOTAL GATE CHARGEnc PCossi0F Figure 10 Transient Thermal Resistance vs Time for [RF120-123 And IRF520-523 Po > ye I i <1 et Zaye TRANSIENT THERMAL RESISTANCEC/W a Det Facer, oe curves tpply to brain 2 or hemng peta Trwan = Tet Pe X Zaye 10-4 10-1 4 10 4 10" 4 102 4 103 4 106 tTIMEms PCoses1F Figure 12 Transient Thermal Resistance vs Time for MTP10N08/10N10 191 af = cs 2 8 E BS ts os Pe ze ao eg Foe 8 ~sa,eF 1 & Dany FactorD z penny eure an own Tapa = Te? Pa * Ione 4 108 4 161 4 108 s 103 tTIMEme 10-1 10-1 PoosssiF 2-71 rete